Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C

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1 Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. 35mW - 12V SiC Normally-On JFET UJ3N1235K3S CASE G (1) CASE D (2) S (3) Part Number Package Marking UJ3N1235K3S TO-247-3L UJ3N1235K3S Features Typical Applications Typical on-resistance R DS(on),typ of 35mW Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C Switch mode power supplies Extremely fast switching not dependent on temperature Power factor correction modules Low gate charge Motor drives Low intrinsic capacitance Induction heating RoHS compliant Maximum Ratings Drain-source voltage Gate-source voltage Continuous drain current (2) Pulsed drain current (3) Power dissipation Symbol V DS I DM P tot Maximum junction temperature T J,max 175 C Operating and storage temperature T J, T STG -55 to 175 C Max. lead temperature for soldering, 1/8 from case for 5 seconds (1) +2V AC rating applies for turn-on pulses <2ns applied with external R G > 1W. (2) Limited by T J,max Parameter (3) Pulse width t p limited by T J,max V GS I D Test Conditions DC AC (1) T C = 25 C T C = 1 C T C = 25 C T C =25 C Value 12-2 to +3-2 to Units T L 25 C V V A A A W Preliminary, September For more information go to

2 Electrical Characteristics (T J = +25 C unless otherwise specified) Typical Performance - Static 35mW - 12V SiC Normally-On JFET UJ3N1235K3S Parameter Symbol Test Conditions Value Min Typ Max Units Drain-source breakdown voltage BV DS V GS = - 2V, I D =1mA 12 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance I D I G R DS(on) V DS = 12V, V GS = -2V, T J = 25 C V DS = 12V, V GS = -2V, T J = 175 C V GS =-2V, T j =25 C V GS =-2V, T j =175 C V GS =2V, I D =2A, T J = 25 C V GS =V, I D =2A, T J = 25 C V GS =2V, I D =2A, T J = 175 C V GS =V, I D =2A, T J = 175 C V G(th) V DS = 5V, I D = 7mA V R G f = 1MHz, open drain 2.4 W ma ma mw Preliminary, September For more information go to

3 Typical Performance - Dynamic 35mW - 12V SiC Normally-On JFET UJ3N1235K3S Parameter symbol Test Conditions Value Min Typ Max Input capacitance C iss V DS = 1V, 2145 Output capacitance C oss V GS = -2V, 18 Reverse transfer capacitance C rss f = 1kHz 172 Effective output capacitance, energy related Total gate charge Gate-drain charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy V DS = V to 8V, C oss(er) 15 pf V GS = -2V Q G 235 V Q DS =8V, I D = 4A, GD 13 V GS =-18V to V Q GS 25 t d(on) 25 t r V DS =8V, I D =4A, 37 t Gate Driver =-18V to V, d(off) 48 R G,EXT = 1W, t f 39 Inductive Load, E ON FWD: UJ3D122KSD 935 E OFF T J = 25 C 828 E TOTAL 1763 t d(on) 24 t r V DS =8V, I D =4A, 35 t d(off) Gate Driver =-18V to V, 43 t f R G,EXT = 1W, Inductive Load, 37 E ON FWD: UJ3D122KSD 88 E OFF T J = 15 C 8 E TOTAL 168 Units pf nc ns mj ns mj Thermal Characteristics Value Parameter symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R qjc C/W Preliminary, September For more information go to

4 Drain Leakage Current, I D (A) Typical Performance Diagrams 35mW - 12V SiC Normally-On JFET UJ3N1235K3S Vgs = 2V Vgs = V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V Vgs = 2V Vgs = V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V Figure 1 Typical output characteristics Figure 2 Typical output characteristics at T J = -55 C at T J = 25 C Vgs = 2V Vgs = V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V Vgs = -1V 1.E-3 1.E-4 1.E E E Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage at T J = 175 C at V GS = -2V Preliminary, September For more information go to

5 On-Resistance, R DS_ON (P.U.) On-Resistance, R DS(on) (mw) Capacitance, C (pf) 35mW - 12V SiC Normally-On JFET UJ3N1235K3S 14 1 C iss C oss C rss Gate-Source Voltage, V GS (V) Figure 5 Typical capacitances at 1kHz and V GS = -2V Figure 6 Typical transfer characteristics at V DS = 5V Junction Temperature, T J ( C) Figure 7 Normalized on-resistance vs. temperature at V GS = V and I D = 2A Figure 8 Typical drain-source on-resistance at V GS = V Preliminary, September For more information go to

6 Power Dissipation, P tot (W) Threshold Voltage, V G(th) (V) E OSS (mj) 35mW - 12V SiC Normally-On JFET UJ3N1235K3S Junction Temperature, T j ( C) Figure 9 Threshold voltage vs. Tj Figure 1 Typical stored energy in C OSS at V DS = 5V and I D = 7mA at V GS = -2V ms 3 1 1ms 2 1ms 1 1 DC 1ms 1ms Case Temperature, T C ( C) Figure 11 Total power Dissipation Figure 12 Safe operation area T c = 25 C, Parameter t p Preliminary, September For more information go to

7 Thermal Impedance, Z qjc ( C/W) Gate-Source Voltage, V GS (V) Gate Current, I G (A) Gate Current, I G (A) 35mW - 12V SiC Normally-On JFET UJ3N1235K3S 1.E-4 1.E E E E Gate-Source Voltage, V GS (V) Gate-Source Voltage, V GS (V) Figure 13 Typical gate leakage current Figure 14 Typical gate forward current at V DS = V at V DS = V D =.5 D =.3 D =.1 D =.5 D =.2 D =.1 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Pulse Time, t p (s) Gate Charge, Q G (nc) Figure 15 Maximum transient Figure 16 Typical gate charge thermal impedance at V DS = 8V and I D = 4A Preliminary, September For more information go to

8 Switching Energy (mj) Switching Energy (mj) Switching Energy (mj) 35mW - 12V SiC Normally-On JFET UJ3N1235K3S 25 2 V DD = 8V, V GS = -18V/V R G = 1W, FWD: UJ3D122KSD T J = 15 C 5 4 V DD = 8V, V GS = -18V/V I D =4A, T J = 15 C 15 1 Etot Eon Eoff Etot Eon Eoff Gate Resistor, R G (W) Figure 17 Clamped inductive switching energy Figure 18 Clamped inductive switching vs. drain current at T J = 15 C turn-off energy vs. gate resistor R G Etot Eon Eoff V DD = 8V, V GS = -18V/V R G = 1W, FWD: UJ3D122KSD Junction Temperature, T J ( C) Figure 19 Clamped inductive switching energy vs. junction temperature at I D = 4A Preliminary, September For more information go to

9 Disclaimer 35mW - 12V SiC Normally-On JFET UJ3N1235K3S United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Preliminary, September For more information go to