PRELIMINARY TO-247. Conditions. T j = 100 C T j = 150 C T C = 25 C AC (2) 1/8" from case < 10 s. Symbol. R th JC R th JA

Transcription

1 NormallyOFF Trench Power JFET Features: Compatible with Standard Gate Driver ICs Positive Temperature Coefficient for Ease of Paralleling Extremely Fast Switching with No "Tail" Current at 15 C 15 C Maximum Operating Temperature R DS(on)max of.1 Ω Voltage Controlled 4 Low Gate Charge Low Intrinsic Capacitance Product Summary 12 BV DS R DS(ON)max.1 E TS,typ 17 G(1) D(2,4) V Ω µj Applications: TO247 Solar Inverter SMPS S(3) Power Factor Correction Internal Schematic Induction Heating UPS Motor Drive MAXIMUM RATINGS Parameter Symbol Conditions Value Unit Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time I D, Tj=1 I D, Tj=15 t SC T j = 1 C T j = 15 C T j = 25 C Power Dissipation P D T C = 25 C GateSource Voltage I DM V GS 3 V DD < 8 V, T C < 125 C 5 AC (2) A A µs W 15 to +15 V Operating and Storage Temperature T j, T stg 55 to +15 C Lead Temperature for Soldering T sold 1/8" from case < 1 s 26 C (1) Limited by pulse width (2) Rg EXT = 1 ohm, t p < 2ns, see Figure 5 for static conditions THERMAL CHARACTERISTICS Parameter Thermal Resistance, junctiontocase Thermal Resistance, junctiontoambient Symbol R th JC R th JA Typ Value Max Unit C / W Rev2.1 1/8 February 211

2 PRELIMINARY ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Value Typ Max Unit Off Characteristics DrainSource Blocking Voltage Total Drain Leakage Current Total Gate Reverse Leakage BV DS I DSS I GSS V GS = V, I D = 6 µa V DS = 12 V, V GS = V, Tj = 25 o C V DS = 12 V, V GS = V, Tj = 15 o C V DS = 12 V, V GS < 15 V, Tj = 25 o C V DS = 12 V, V GS < 15 V, Tj = 15 o C V GS = 15 V, VDS = V V GS = 15 V, VDS = 12V V 1 µa ma On Characteristics DrainSource Onresistance Gate Threshold Voltage Gate Forward Current Gate Resistance R DS(on) V GS(th) I GFWD R G R G(ON) I D = 1 A, V GS = 3 V, T j = 25 C I D = 1 A, V GS = 3 V, T j = 1 C V DS = 1 V, I D = 34 ma.75 V GS = 3 V f = 1 MHz, drainsource shorted V GS >2.7V; See Figure Ω V 22 ma 6 Ω.5 Ω Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, energy related C iss C oss C rss C o(er) V DD = 1 V V DS = V to 6 V, V GS = V pf Switching Characteristics Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Turnon Delay Rise Time Turnoff Delay Fall Time Turnon Energy Turnoff Energy Total Switching Energy Total Gate Charge GateSource Charge GateDrain Charge t on 1 V DS = 6 V, I D = 12 A, t r 12 Inductive Load, T J = 25 o C ns t off Gate Driver = +15V, 15V, 3 t f 25 E on 68 E See Figure 15 and application note for off 87 µj gate drive recommendations E ts 155 t on 1 V DS = 6 V, I D = 12 A, t r Inductive Load, T J = 15 o 15 C ns t off Gate Driver = +15V, 15V, 3 t f 25 E on 82 E See Figure 15 and application note for off 94 µj gate drive recommendations E ts 176 Q g 3 V Q DS = 6 V, I D = 5 A, gs 1 nc V GS = V Q gd 24 Rev2.1 2/8 February 211

3 Figure 1. Typical Output Characteristics 4 I D = f(v DS ); T j = 25 C; parameter: V GS Figure 2. Typical Output Characteristics 2 I D = f(v DS ); T j = 1 C; parameter: V GS I D, DrainSource Current (A) V 2.5 V 2. V 1.5 V I D, DrainSource Current (A) V 2.5 V 2. V 1.5 V V DS, DrainSource Voltage (V) V DS, DrainSource Voltage (V) Figure 3. Typical Output Characteristics 15 I D = f(v DS ); T j = 15 C; parameter: V GS Figure 4. Typical Transfer Characteristics 35 I D = f(v GS ); V DS = 5 V I D, DrainSource Current (A) V 2.5 V 2. V 1.5 V I D, DrainSource Current (A) V DS, DrainSource Voltage (V) V GS, GateSource Voltage (V) Figure 5. GateSource Current I GS = f(v GS ); parameter: T j Figure 6. DrainSource Onresistance R DS(on) = f(i D ); V GS = 3.; parameter: Tj I GS, GateSource Current (A) o C o C R DS(on), DrainSource Onresistance (Ω) o C 1 o C 25 o C V GS, GateSource Voltage (V) I D, Drain Current (A) Rev2.1 3/8 February 211

4 Figure 7. DrainSource Onresistance R DS(ON) = f(t j ); I D = 1A; parameter: I GS Figure 8. DrainSource Onresistance R DS(ON) = f(i GS ); I D = 1A; T j = 25 o C.4.94 R DS(on), DrainSource Onresistance (Ω) mA 25mA 1mA T j, Junction Temperature ( C) R DS(on), DrainSource Onresistance (Ω) I GS, GateSource Current (ma) Figure 9. Typical Capacitance C = f(v DS ); V GS = V; f = 1 MHz Figure 1. Gate Charge Q g = f(v GS ); V DS = 6V; I D = 5A, T j = 25 o C 1.E+4 3. C, Capacitance (pf) 1.E+3 1.E+2 1.E+1 C rss C oss C iss V GS, GateSource Voltage (V) E V DS, DrainSource Voltage (V) Q g, Total Gate Charge (nc) Figure 11. Gate Threshold Voltage V th = f(t j ) Figure 12. DrainSource Leakage I D = f(v DS ); V GS = V; parameter: Tj V TH, Gate Threshold Voltage (V) mV/ o C Max Typical I D, Drain Leakage Current (A) 1E3 1E4 1E5 1E6 1E7 1E8 1E9 15 o C 1 o C 25 o C T j, Junction Temperature ( o C) BV DS, DrainSource Blocking Voltage (V) Rev2.1 4/8 February 211

5 Figure 13. Switching Energy Losses E s = f(i D ); V DS = 6V; GD = +15V/15V, R GEXT = 5ohm Figure 14. Switching Energy Losses E s = f(r GEXT ); V DS = 6V; I D = 12A, GD = +15V/15V E, Switching Energy (uj) Tj = 25 o C Tj = 15 o C E TS E OFF E ON E, Switching Energy (uj) Tj = 25 o C Tj = 15 o C E TS E OFF E ON I D, Drain Current (A) Rg EXT, External Gate Resistance, (Ω) Figure 15. Gate Driver & Switching Test Circuit SGDR3P1 Figure 16. Test Circuit & Test Conditions Test Conditions Single Device configuration V DD = 6V, I LPK = 12A, T A = 25 o C RC snubber: R= 22 and C = 4.7nF 4uH load inductance Each device driven by separate SGD3P1 Gate driver approx. 5mm from gate terminal 3.3nF gatesource capacitive clamp The SGDR3P1 is a gate driver reference design available for purchase from SemiSouth. See applications note ANSS2 for full circuit description, test results, schematics, and bill of materials. Gerber files also available upon request. Rev2.1 5/8 February 211

6 Figure 17. Transient Thermal Impedance Z th(jc) = f(t P ); parameter: Duty Ratio Z th(jc), Transient Thermal Impedance ( o C/W) 1.E+ 1.E1 1.E2 9% 7% 5% 3% 1% 5% 2% 1%.5%.2% 1.E3 1.E6 1.E5 1.E4 1.E3 1.E2 1.E1 t p, Pulse Width (s) Rev2.1 6/8 February 211

7 PRELIMINARY DIM MILLIMETERS INCHES MIN MAX MIN MAX A A A b b b c D D D e E E L L Q ØP ØP Rev2.1 7/8 February 211

8 Published by SemiSouth Laboratories, Inc. 21 Research Boulevard Starkville, MS USA SemiSouth Laboratories, Inc. 211 Information in this document supersedes and replaces all information previously supplied. Information in this document is provided solely in connection with SemiSouth products. SemiSouth Laboratories, Inc. reserves the right to make changes, corrections, modifications or improvements, to this document without notice. No license, express or implied to any intellectual property rights is granted under this document. Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. Rev2.1 8/8 February 211