LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET

Transcription

1 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit Diagram TO-247-3L Features * * Body diode Optimized for highfrequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off operation at all temperatures Ultra-low on-resistance Environmental Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Littelfuse Pb-free logo = Pb-free lead plating RoHS Pb Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High Voltage DC/DC Converters Battery Chargers Induction Heating 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

2 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value Unit Continuous Drain Current I D = 2 V, T C = 25 C 39 = 2 V, T C = 1 C 25 Pulsed Drain Current 1 I D(pulse) T C = 25 C 8 A Power Dissipation P D T C = 25 C, T J = 15 C 179 W Operating Junction Temperature T J -55 to 15 C Gate-source Voltage,MAX Absolute maximum values -6 to 22,OP,TR Transient, <1% duty cycle -1 to 25,OP Recommended DC operating values -5 to 2 Storage Temperature T STG to 15 C Lead Temperature for Soldering T sold - 26 C Mounting Torque M D M3 or 6-32 screw Footnote 1: Pulse width limited by T J,max A V.6 Nm 5.3 in-lb Thermal Characteristics Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case R th,jc,max.7 C/W Maximum Thermal Resistance, junction-to-ambient R th,ja,max 4 C/W Electrical Characteristics (T J = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit Static Characteristics Drain-source Breakdown Voltage V (BR)DSS = V, I D = 25 μa V V Zero Gate Voltage Drain Current DS = 12 V, = V I DSS V DS = 12 V, = V, T J = 15 C μa Gate Leakage Current I GSS,F = 2 V, V DS = V I GSS,R = -1 V, V DS = V na I Drain-source On-state Resistance D = 2 A, = 2 V R DS(ON) I D = 2 A, = 2 V, T J = 15 C mω V Gate Threshold Voltage DS =, I D = 1 ma ,(th) V DS =, I D = 1 ma, T J = 15 C V Gate Resistance R G f = 1 MHz, V AC = 25 mv Ω 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

3 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Electrical Characteristics (T J = 25 C unless otherwise specified) Value Characteristics Symbol Conditions Unit Min Typ Max Dynamic Characteristics Turn-on Switching Energy E ON V DD = 8 V, I D = 2 A, Turn-off Switching Energy E OFF = -5/+2 V, μj R G,ext = 2 Ω, L = 1.4 mh Total Per-cycle Switching Energy E TS Input Capacitance C ISS Output Capacitance Reverse Transfer Capacitance C OSS C RSS V DD = 8 V, = V, f = 1 MHz, V AC = 25 mv pf C OSS Stored Energy E OSS μj Total Gate Charge Q g Gate-source Charge Q gs V = 8 V, I DD = 2 A, D = -5/+2 V nc Gate-drain Charge Q gd Turn-on Delay Time t d(on) V = 8 V, V DD = -5/+2 V, GS Rise Time t r I D = 2 A, R G,ext = 2 Ω, ns Turn-off Delay Time t R L = 4 Ω, d(off) Timing relative to V DS Fall Time t f Reverse Diode Characteristics Value Characteristics Symbol Conditions Unit Min Typ Max I Diode Forward Voltage S = 1 A, = V V SD I S = 1 A, = V, T J = 15 C V Continuous Diode Forward Current I S VGS = V, T = 25 C C Peak Diode Forward Current 1 I SP A Reverse Recovery Time t rr ns VGS = -5 V, I S = 2 A, Reverse Recovery Charge Q rr V R = 8 V, nc Peak Reverse Recovery Current I rrm di/dt = 5.3 A/ns A Footnote 1: Pulse width limited by T J,max 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

4 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 1: Maximum Power Dissipation ( T J = 15 C ) Figure 2: Transfer Characteristics ( V DS = 1 V ) Maximum Power Dissipation (W) Case Temperature, T C ( C) C 25 C -55 C Gate-Source Voltage, (V) Figure 3: Output Characteristics ( T J = 25 C ) Figure 4: Output Characteristics ( T J = 15 C ) 8 8 2V V 16V 14V 12V = 2V,18V,16V 14V 12V 1V 1V Drain-source Voltage, V DS (V) Drain-source Voltage, V DS (V) Figure 5: Output Characteristics ( T J = -55 C ) Figure 6: Reverse Conduction Characteristics ( T J = 25 C ) V 18V 16V 14V 12V 1V Drain-source Voltage, V DS (V) 7 Reverse Voltage, V SD (V) V V 5V 1V Reverse Current, I S (A) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

5 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 7: Reverse Conduction Characteristics ( T J = 15 C ) Figure 8: Reverse Conduction Characteristics ( T J = -55 C ) 7 6 Reverse Voltage, V SD (V) = -5V V 5V 1V,15V,2V Reverse Current, I S (A) 7 Reverse Voltage, V SD (V) V V 5V 1V VGS = 15V,2V Reverse Current, I S (A) 8 8 Figure 9: Transient Thermal Impedance Figure 1: Safe Operating Area ( T C = 25 C ) Transient Thermal Impedance, Z th,jc (Normalized to R th,jc ) Single Pulse Pulse Width (s) μs μs 1 ms DC Drain-source Voltage, V DS (V) Figure 11: On-resistance vs. Drain Current Figure 12: Normalized On-resistance On-resistance, R DS(ON) (mω) C -55 C 25 C Normalized On-Resistance, R DS(ON) ( = 2 V, I D = 2 A ) Junction Temperature, T J ( C) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

6 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 13: Threshold Voltage Figure 14: Drain-source Blocking Voltage Threshold Voltage, (th) (V) (I D = 1 ma) Junction Temperature, T J ( C) Normalized Blocking Voltage, V (BR)DSS (V) (I D = 25 μa) Junction Temperature, T J ( C) Figure 15: Junction Capacitances Figure 16: Junction Capacitances 1 1 C ISS C ISS Capacitance (pf) 1 1 C OSS Capacitance (pf) 1 1 C OSS 1 ( f = 1 MHz ) C RSS C RSS ( f = 1 MHz ) Drain Voltage, V DS (V) Drain Voltage, V DS (V) Figure 17: C OSS Stored Energy E OSS Figure 18: Gate Charge 4 2 Stored Energy, E oss (μj) Gate- source Voltage, (V) ( V = 8 V, I = 2 A ) DD D Drain Voltage, V DS (V) Gate Charge, Q g (nc) 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

7 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Figure 19: Switching Energy vs. Drain Current Figure 2: Switching Energy vs. Gate Resistance Switching Energy (μj) V DD = 8 V R G,ext = 2 =-5/+2V FWD = LSIC2SD12A1 L = 1.4 mh T J = 25 C ETS E ON E OFF Switching Energy (μj) V DD = 8 V I D = 2A =-5/+2V FWD = LSIC2SD12A1 L = 1.4 mh T J = 25 C E TS E ON E OFF External Gate Resistance, R G,ext (Ω) Package Dimensions TO-247-3L Recommended Hole Pattern Layout 2.46 R UNIT: mm 1 A Notes: 1. Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed.127 mm per side measured at outer most extreme of plastic body. 3.øP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of mm. Symbol Millimeters Min Nom Max A A A D E E E2/ e L L øp Q S b b b b b b c c D D E øp Littelfuse, Inc. Rev.2, Revised: 9/4/17

8 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L Part Numbering and Marking System Packing Options SIC1MO12E8 L F YYWWD ZZZZZZ-ZZ SIC = SiC 1 = Gen1 MO = MOSFET 12 = Voltage Rating (12 V) E = TO-247-3L 8 = RDS(ON) (8 mohm) YY = Year WW = Week D = Special Code ZZZZZZ-ZZ = Lot Number Part Number Marking Packing Mode M.O.Q LSIC1MO12E8 SIC1MO12E8 Tube 45 Packing Specification TO-247-3L Ø Ø Ø Ø NOTE: 1. All pin plug holes are considered critical dimension 2. Tolerance is to be ±.1 unless otherwise specified 3. Dimension are in inch (and millimeters). 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

9 LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L 217 Littelfuse, Inc. Rev.2, Revised: 9/4/17

10 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Littelfuse: LSICMO12E8 LSIC1MO12E8