N-Channel 30-V (D-S) MOSFET With Sense Terminal

Transcription

1 SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) V S = V 5 a V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New Low Thermal Resistance Package APPLICATIONS Automotive Industrial D PAK-5 D (Tab, 3) () () KELVIN 3 5 SENSE () S (5) SENSE D S KELVIN N-Channel MOSFET ABSOLUTE MAXIMUM RATINS (T C = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 ate-source Voltage V S V Continuous Drain Current (T J = 75 C) T C = 5 C 5 a T C = 5 C 3 a A Pulsed Drain Current M Avalanche Current I AR 5 Repetitive Avalanche Energy b L =. mh E AR 3 mj T C = 5 C 3 c Maximum Power Dissipation b T A = 5 C P D.7 d W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount d R thja 55 Junction-to-Case R thjc. C/W Notes a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on square PCB (FR- material). Document Number: 7 S-39 Rev. A, -Mar-

2 SUM5N3-3LC New Product MOSFET SPECIFICATIONS (T J =5 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V S = V, = 5 A 3 ate Threshold Voltage V S(th) V DS = V S, S = 5 A 3 V ate-body Leakage I SS V DS = V, V S = V na V DS = 3 V, V S = V Zero ate Voltage Drain Current SS V DS = 3 V, V S = V, T J = 5 C 5 DSS V DS = 3 V, V S = V, T J = 75 C 5 On-State Drain Current a (on) V DS = 5 V, V S = V 5 A V S = V, = 5 A..3 V S = V, = 5 A, T J = 5 C.. Drain-Source On-State Resistance a r DS(on) V S = V, = 5 A, T J = 75 C.. V S =.5 V, = A..7 Forward Transconductance a g fs V DS = 5 V, = 5 A 3 S Dynamic b Input Capacitance C iss 9 Output Capacitance C oss V S = V, V DS = 5 V, f = MHz 3 pf Reversen Transfer Capacitance C rss Total ate Charge c Q g 35 5 ate-drain Charge c Q gd 5. ate-source Charge c Q gs V DS = 5 V, V S = V, = 5 A 7. nc Turn-On Delay Time c t d(on) Rise Time c t r VDD V = 5 V, R L =.3 93 Turn-Off Delay Time c t d(off) 5 A, VEN = V, R =.5 3 Fall Time c t f ns Source-Drain Diode Ratings and Characteristics (T C = 5 C) b Continuous Current I s 5 Pulsed Current I SM Forward Voltage a V SD I F = 5 A, V S = V.3. V Reverse Recovery Time t rr 35 7 ns Peak Reverse Recovery Current I RM(REC) I F = 5 A, di/dt = A/ s.5 A Reverse Recovery Charge Q rr. C Current Sense Characteristics Current Sensing Ratio r = A, V SS = V, R SENSE =. 5 Mirror Active Resistance r m(on) V S = V, = ma 3.5 Notes: a. Pulse test; pulse width 3 s, duty cycle %. e. uaranteed by design, not subject to production testing. b. Independent of operating temperature. A Document Number: 7 S-39 Rev. A, -Mar-

3 SUM5N3-3LC TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) Output Characteristics Transfer Characteristics V S = thru 5 V T C = 55 C 5 C V 5 C 3 V Transconductance. On-Resistance vs. Drain Current T C = 55 C.5 Transconductance (S) g fs 5 C 5 C r DS(on) On-Resistance ( )..3.. V S =.5 V V S = V. 3 Capacitance ate Charge C Capacitance (pf) C iss C oss ate-to-source Voltage (V) V S V S = 5 V = 5 A C rss Q g Total ate Charge (nc) Document Number: 7 S-39 Rev. A, -Mar- 3

4 SUM5N3-3LC New Product TYPICAL CHARACTERISTICS (5 C UNLESS NOTED). On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage. V S = V = 5 A (Normalized).... Source Current (A) I S T J = 75 C T J = 5 C T J Junction Temperature ( C) THERMAL RATINS V SD Source-to-Drain Voltage (V) Maximum Drain Current vs. Case Temperature Safe Operating Area 5 3 Limited by r DS(on). s. s T C = 5 C Single Pulse. s. s dc. T C Case Temperature ( C) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse. 5 3 Square Wave Pulse Duration (sec) 3 Document Number: 7 S-39 Rev. A, -Mar-

5 SUM5N3-3LC TYPICAL CHARACTERISTICS (5 C UNLESS NOTED) SENSE DIE On-Resistance vs. Sense Current On-Resistance vs. ate-source Voltage V S =.5 V V S = V = ma I SENSE (A) Current Ratio (I (MAIN)/IS ) vs. ate-source Voltage (Figure ) R S =. R S =.7 Ratio R S =. R S =. V SENSE S KELVIN R S =.5 R S Figure Document Number: 7 S-39 Rev. A, -Mar- 5