IXTK5N250 IXTX5N250 = 2500V = 5A < 8.8Ω. High Voltage Power MOSFET w/ Extended FBSOA. Advance Technical Information. R DS(on)
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1 High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA Advance Technical Information IXTKN IXTXN S = V I D = A R DS(on) <.Ω TO- (IXTK) Symbol Test Conditions Maximum Ratings S = C to C V V DGR = C to C, R GS = MΩ V S Continuous ± V M Transient ± V I D = C A I DM = C, Pulse Width Limited by M A I A = C. A E AS = C. J P D = C 9 W - to + C M C T stg - to + C T L.mm (. in.) from Case for s C T SOLD Plastic Body for s C M d Mounting Torque (TO-)./ Nm/lb.in. F C Mounting Force (PLUS7).. /...7 N/lb. Weight TO- g PLUS7 g ( = C, Unless Otherwise Specified) Min. Typ. Max. BS = V, I D = ma V (th) =, I D = ma.. V I GSS = ±V, = V ± na I DSS = kv, V = V GS μa = C ma R DS(on) = V, I D =. I D, Note. Ω G D S PLUS7 (IXTX) G D S G = Gate D = Drain S = Source Tab = Drain Features Avalanche Rated Fast Intrinsic Diode Guaranteed FBSOA at 7 C Low Package Inductance Advantages Easy to Mount Space Savings Applications High Voltage Power Supplies Capacitor Discharge Pulse Circuits Tab Tab IXYS CORPORATION, All Rights Reserved DS(/)
2 ( = C, Unless Otherwise Specified) Min. Typ. Max. g fs = V, I D =. I D, Note... S C iss pf C oss = V, = V, f = MHz pf C rss 9 pf t d(on) ns Resistive Switching Times t r ns V t GS = V, =. S, I D =. I D d(off) 9 ns R t G = Ω (External) f ns Q g(on) nc Q gs = V, = V, I D =. I D nc Q gd 7 nc R thjc. C/W R thcs. C/W Safe Operating Area Specification Min. Typ. Max. SOA = V, I D =.A, = 7 C, tp = s W Source-Drain Diode TO- Outline PLUS7 TM Outline IXTKN IXTXN Terminals: - Gate - Drain - Source - Drain Dim. Millimeter Inches Min. Max. Min. Max. A...9. A..9.. A b.... b b c.... D.9... E e. BSC. BSC J.... K.... L.... L P.7... Q Q..9.. R....7 R S.... T ( = C, Unless Otherwise Specified) Min. Typ. Max. I S = V A I SM Repetitive, Pulse Width Limited by M A V SD I F = I S, = V, Note. V t rr I F =.A, -di/dt = A/μs, V R = V. μs Note:. Pulse test, t μs, duty cycle, d %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Terminals: - Gate - Drain - Source Dim. Millimeter Inches Min. Max. Min. Max. A...9. A A b.... b b.9... C.... D...9. E.7... e. BSC. BSC L L....7 Q.9... R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by one or moreof the following U.S. patents:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
3 IXTKN IXTXN Fig.. Output = ºC Fig.. Output = ºC.. = V = V. V V... V. V. V. Fig.. R DS(on) Normalized to I D =.A Value vs. Junction Temperature. Fig.. R DS(on) Normalized to I D =.A Value vs. Drain Current. = V. = V RDS(on) - Normalized..... I D = A I D =.A RDS(on) - Normalized = ºC = ºC Degrees Centigrade I D - Amperes Fig.. Maximum Drain Current vs. Case Temperature Fig.. Input Admittance.... = ºC ºC - ºC Degrees Centigrade Volts IXYS CORPORATION, All Rights Reserved
4 IXTKN IXTXN Fig. 7. Transconductance Fig.. Forward Voltage Drop of Intrinsic Diode 7 = - ºC g f s - Siemens ºC ºC IS - Amperes = ºC = ºC..... I D - Amperes V SD - Volts Fig. 9. Gate Charge, Fig.. Capacitance VGS - Volts = V I D =.A I G = ma Capacitance - PicoFarads,, f = MHz C iss C oss C rss Q G - NanoCoulombs Fig.. Forward-Bias Safe Operating = ºC Fig.. Forward-Bias Safe Operating = 7ºC R DS(on) Limit R DS(on) Limit = ºC = ºC ms Single Pulse DC.,, µs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ms ms ms = ºC = 7ºC Single Pulse ms DC.,, µs µs ms
5 IXTKN IXTXN. Fig.. Maximum Transient Thermal Impedance. Fig.. Maximum Transient Thermal Impedance aaaaaa. Z(th)JC - ºC / W Pulse Width - Seconds IXYS CORPORATION, All Rights Reserved IXYS REF: IXT_N(9P)---A
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High Voltage XPT TM IGBT (Electrically Isolated Tab) Preliminary Technical Information S = 5V 11 = 38A (sat) 3.3V Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 5 V V CGR = 25 C to 15 C, R GE
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V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
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Preliminary Technical Information X-Class HiPerFET TM Power MOFET IXFT5N6X IXFQ5N6X IXFH5N6X V I 25 R (on) = 6V = 5A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-268 (IXFT) G (Tab)
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V XPT TM IGBT GenX TM High-Speed IGBT for - khz Switching IXYHNC S = V = A (sat).v t fi(typ) = 9ns Symbol Test Conditions Maximum Ratings S = C to 7 C V V CGR = C to 7 C, R GE = MΩ V V GES Continuous ±
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GenX TM V IGBTs Medium-Speed-Low-Vsat PT IGBTs for -khz Switching S = V = A (sat).v t fi(typ) = ns TO- (IXGK) Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
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GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
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HiPerFAST TM High Speed IGBT C2-Class w/ Diode IXGK5N6C2D1 IXGX5N6C2D1 S = 6V 11 = 5A (sat) 2.7V (typ) = 48ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 6 V V CGR = 25 C to 15
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GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
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V XPT TM GenX3 TM IGBTs High-Speed IGBT for - khz Switching IXYANC3HV IXYPNC3 IXYHNC3 S 11 = V = A (sat) 3.V = 1ns t fi(typ) TO-3HV (IXYA) Symbol Test Conditions Maximum Ratings S = C to 17 C V V CGR =
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Preliminary Technical Information GenX3 TM 12V IGBT High speed PT IGBTs for 2 - khz switching IXGHN12C3 V CES = 12V 11 = A V CE(sat).2V t fi(typ) = ns Symbol Test Conditions Maximum Ratings V CES = C to
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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) Preliminary Technical Information IXGLN25 S = 25V 9 = 65A (sat) 2.9V Symbol Test Conditions Maximum Ratings S = 25 C
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XPT TM 6V IGBT GenX3 TM w/diode (Electrically Isolated Tab) Preliminary Technical Information MMIXXN6B3H S = 6V = 7A (sat).7v t fi(typ) = ns Extreme Light Punch Through IGBT for -3kHz Switching Symbol
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
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XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
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9V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching Advance Technical Information IXYNN9C3H S = 9V 9 = 7A (sat).7v t fi(typ) = ns E Symbol Test Conditions Maximum Ratings S = C to C 9
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V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYNNC3H S = V = A (sat) 3.V t fi(typ) = 93ns SOT-B, minibloc E33 Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C,
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