1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C

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1 CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode High-Frequency Operation Positive Temperature Coefficient on V F and V DS(on) AlSiC Baseplate, AMB Si 3 N 4 Substrate Package V DS R DS(on) ( = 25 C) E OFF ( = 125 C) 1.2 kv 16 mω 1.8 mj System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Ease of Transistor Gate Control Reduced Cooling Requirements Reduced System Cost Applications High Power Converters Motor Drives Solar Inverters UPS and SMPS Induction Heating Part Number Package Marking CAS1H12AM1 Half-Bridge Module CAS1H12AM1 Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DS Drain - Source Voltage 1.2 kv V GS Gate - Source Voltage -5/+2 V I D Continuous Drain Current 168 V GS = 2V, T C =25 C A 117 V GS = 2V, T C =9 C Fig. 25 I D(pulse) Pulsed Drain Current 4 A Pulse width Limited by T jmax,t C = 25 C Datasheet: CAS1H12AM1,Rev. D Junction Temperature 15 C T C,T STG Case and Storage Temperature Range -55 to +125 C V isol Case Isolation Voltage 6 kv AC, t=1min L Stray Stray Inductance 2 nh Measured from D1 to S2 M Mounting Torque 2.94 Nm G Weight 15 g Measured without fasteners Clearance Distance 12.2 mm Terminal to terminal Creepage Distance 17.3 mm Terminal to terminal 2.2 mm Terminal to base plate Pd Power Dissipation 568 W Fig 24 Subject to change without notice. 1

2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain - Source Breakdown Voltage 1.2 kv V GS, = V, I D = 1uA V GS(th) I DSS Gate Threshold Voltage Zero Gate Voltage Drain Current V DS = V GS, ID = 5mA V DS = V GS, ID = 5mA V 1.8 V DS = V GS, ID = 5mA, = 15ºC 2.4 V DS = V GS, ID = 5mA, = 15ºC 5 5 V DS = 12V, V GS = V μa V DS = 12V, V GS = V, = 15ºC I GSS Gate-Source Leakage Current.25 μa V GS, = 2V, V DS = V R DS(on) g fs On State Resistance Transconductance Fig mω VGS = 2V, ID = 1A Fig V GS = 2V, I D = 1A, = 15ºC 31 V DS = 2V, ID = 1A 32 S V DS = 2V, ID = 1A, = 15ºC Fig. 8 C iss Input Capacitance 1.7 C oss Output Capacitance.97 C rss Reverse Transfer Capacitance.37 nf V DS = 6V, V GS = V f = 1MHz, V AC = 25mV Fig. 16,17 E ON Turn-On Switching Energy (25ºC) (125ºC) E Off Turn-Off Switching Energy (25ºC) (125ºC) mj mj V DD = 8V, V GS = +2V/-5V I D = 1A, R G = 5.1Ω Inductive Load = 2 μh Note: IEC Definitions Fig. 21 R G Internal Gate Resistance 1.25 Ω f = 1MHz, V AC = 25mV Q G Gate Charge 49 nc V DD= 6V, I D= 1A Fig. 18 Resistive Switching t d(on) Turn-on delay time 58 ns t r(on) V S1/D2 fall time 9% to 1% 76 ns t d(off) Turn-off delay time 82 ns t f(off) V S1/D2 rise time 1% to 9% 46 ns V DD = 8V, R LOAD = 8Ω V GS = +2/-5V RG = 5.1Ω Note: IEC Definitions Fig. 19, 2 2 CAS1H12AM1,Rev. D

3 Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage V I F = 1A, V GS = Fig I F = 1A, = 15ºC Fig. 12 Q C Total Capacitive Charge 1.6 μc t RR Reverse Recovery Time 47 ns I F = 1A, V R = 6V di F/dt = 22A/μs, = 25ºC E RR Reverse Recovery Energy.5 mj Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thjcm Thermal Resistance Juction-to-Case for MOSFET R thjcd Thermal Resistance Juction-to-Case for Diode C/W Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V DS overshoots. Please Refer to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules. 3 CAS1H12AM1,Rev. D

4 Typical Performance V GS = 2 V V GS = 15 V = -55 C tp < 5 µs V GS = 2 V V GS = 1 V V GS = 15 V tp < 5 µs 2 V GS = 1 V V GS = 5 V V GS = 5 V Figure 1. Typical Output Characteristics = -55ºC Figure 2. Typical Output Characteristics = 25ºC V GS = 2 V V GS = 15 V V GS = 1 V = 15 C tp < 5 µs V GS = 5 V On Resistance, R DS On (p.u.) I DS = 1 A V GS = 2 V t p < 5 µs Junction Temperature, ( C) Figure 3. Typical Output Characteristics = 15ºC Figure 4. Normalized On-Resistance vs. Temperature 6 5 I DS = 1 A t p < 5 µs 6 5 I DS = 1 A t p < 5 µs On Resistance, R DS On (mω) V GS = 16 V V GS = 18 V V GS = 2 V V GS = 14 V On Resistance, R DS On (mω) = 15 C = -55 C Junction Temperature, ( C) Figure 5. On-Resistance vs. Temperature for Various Gate-Source Voltages Gate Source Voltage, V GS (V) Figure 6. On-Resistance vs. Gate Source Voltage for Various Temperature 4 CAS1H12AM1,Rev. D

5 Typical Performance 25 2 V GS = 2 V t p < 5 µs = -55 C 12 1 V DS = 2 V tp < 5 µs On Resistance, R DS On (mω) = 1 C = 15 C = 15 C =25 C = -55 C Drain Source Current, I DS (A) Figure 7. On-Resistance vs. Drain Current for Various Temperatures Figure 8. Transfer Characteristics for Various Junction Temperatures Threshold Voltage, V GS(th) (V) I DS =5 ma I DS = 5 ma.5 V DS = V GS Junction Temperature, ( C) Figure 9. Threshold Voltage vs Junction Temperature = -55 C -25 tp < 5 µs V GS =, -1, -2, V Figure 1. Typical Diode Characteristics = -55ºC tp < 5 µs V GS = -3 V V GS = -4 and -5 V V GS = V V GS = -1 V V GS = -2 V Figure 11. Typical Diode Characteristics = 25ºC = 15 C -25 tp < 5 µs V GS = V -5 V GS = -2 V -75 V GS = -5 V V GS = -1 V -1 V GS = -4V V GS = -3 V -125 Figure 12. Typical Diode Characteristics = 15ºC CAS1H12AM1,Rev. D

6 Typical Performance = -55 C -25 tp < 5 µs V GS = 5 V V GS = V V GS = 1 V V GS = 2 V V GS = 15 V tp < 5 µs V GS = 5 V V GS = V V GS = 1 V V GS = 2 V V GS = 15 V Figure 13. Typical 3rd Quadrant Characteristics = -55 ºC Figure 14. Typical 3rd Quadrant Characteristics = 25 ºC = 15 C -25 tp < 5 µs V GS = V V GS = 5 V V GS = 1 V V GS = 15 V V GS = 2 V Capacitance (F) 1.E-7 1.E-8 1.E-9 1.E-1 1.E C iss C oss C rss f test = 1 MHz V AC = 25 mv Figure 15. Typical 3rd Quadrant Characteristics = 15 ºC Figure 16. Typical Capacitances vs. Drain-Source Voltage ( - 1V) 1.E-7 1.E-8 C iss f test = 1 MHz V AC = 25 mv 2 15 I DS = 1 A I GS = 5 ma V DS = 8 V Capacitance (F) 1.E-9 1.E-1 C oss C rss Gate Charge, Q G (nc) E Figure 17. Typical Capacitances vs. Drain-Source Voltage ( - 6V) Gate-Source Voltage, V GS (V) Figure 18. Typical Gate Charge Characteristic 6 CAS1H12AM1,Rev. D

7 Typical Performance 25 2 V GS = +2V/-5V R Load = 8 Ohms V DD = 8V t f(on) 25 2 V GS = +2V/-5V R Load = 8 Ohms V DD = 8V t d(off) Time (nsec) 15 1 t d(on) Time (nsec) 15 1 t r(off) External Gate Resistor (Ω) External Gate Resistor (Ω) Figure 19. Resistive Switching Times vs. R G (Turn on) Figure 2. Resistive Switching Times vs. R G (Turn off) Switching Energy (mj) V GS = +2V/-5V R G = 5.1 Ohms V DD = 8V, L = 2 µh E ON E OFF Switching Energy (mj) V GS = +2V/-5V I DS = 1 A V DD = 8V, L = 2 µh E ON E OFF Drain Current (A) Gate Resistor (Ω) Figure 21. Clamped Inductive Switching Energy vs. Drain Current Figure 22. Clamped Inductive Switching Energy vs. Gate Resistance Switching Energy (mj) V GS = +2V/-5V R G = 5.1 Ohms V DD = 8V I DS = 1 A, L = 2 µh Junction Temperature, ( C) E ON E OFF Maximum Dissipated Power, P tot (W) C Case Temperature, T C ( C) Figure 23. Clamped Inductive Switching Energy vs. Temperature Figure 24. Power Dissipation Derating Curve 7 CAS1H12AM1,Rev. D

8 Typical Performance Drain-Source Continous Current, I DS (DC) (A) C Case Temperature, T C ( C) Junction-Case Thermal Response, Z th JC ( C/W) 1 D = 5% 1E-3 D = 3% D = 1% D = 5% 1E-3 D = 2% D = 1% D =.5% 1E-3 D =.2% 1E-6 t p D = t p / T T Single Pulse 1E-6 1E-6 1E-6 1E-6 1E-3 1E-3 1E Time, t p (sec) Figure 25. Continuous Current Derating Curve Figure 26. Transient Thermal Impedance - MOSFET Figure 27. Resistive Switching Time Description 8 CAS1H12AM1,Rev. D

9 Circuit Diagram D1 M1 G1 R G(int) D1 G1 RTN M2 S1/D2 G2 R G(int) D2 G2 RTN S2 9 CAS1H12AM1,Rev. D

10 Package Dimensions (mm) 1 CAS1H12AM1,Rev. D

11 Package Dimensions (mm) Package Dimensions (mm) This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 214 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 11 CAS1H12AM1,Rev. D Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax:

12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CAS1H12AM1

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode

CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode CCS5M12CM2 1.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation