AO3411 P-Channel Enhancement Mode Field Effect Transistor

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1 January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features V DS (V) = -2V I D = -4.4 A R DS(ON) < 45mΩ (V GS = -4.5V) R DS(ON) < 6mΩ (V GS = -2.5V) R DS(ON) < 85mΩ (V GS = -1.8V) TO-236 (SOT-23) Top View D G S D G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum -2 ±8 Continuous Drain T A =25 C -4.4 Current A T A =7 C I D -3.5 Pulsed Drain Current B I DM -3 T A =25 C 1.4 P D Power Dissipation A T A =7 C.9 Junction and Storage Temperature Range T J, T STG -55 to 15 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 1s 65 9 C/W R Maximum Junction-to-Ambient A θja Steady-State C/W Maximum Junction-to-Lead C Steady-State R θjl 43 6 C/W

2 AO3411 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-25µA, V GS =V -2 V I DSS Zero Gate Voltage Drain Current V DS =-16V, V GS =V -1 T J =55 C -5 µa I GSS Gate-Body leakage current V DS =V, V GS =±8V ±1 na V GS(th) Gate Threshold Voltage V DS =V GS I D =-25µA V I D(ON) On state drain current V GS =-4.5V, V DS =-5V -25 A V GS =-4.5V, I D =-4A mω T J =125 C 5 6 R DS(ON) Static Drain-Source On-Resistance V GS =-2.5V, I D =-4A 48 6 mω V GS =-1.8V, I D =-2A mω g FS Forward Transconductance V DS =-5V, I D =-4A 7 13 S V SD Diode Forward Voltage I S =-1A,V GS =V V I S Maximum Body-Diode Continuous Current -2.2 A DYNAMIC PARAMETERS C iss Input Capacitance 118 pf C oss Output Capacitance V GS =V, V DS =-1V, f=1mhz 176 pf C rss Reverse Transfer Capacitance 142 pf R g Gate resistance V GS =V, V DS =V, f=1mhz 15 Ω SWITCHING PARAMETERS Q g Total Gate Charge 13.1 nc Q gs Gate Source Charge V GS =-4.5V, V DS =-1V, I D =-4A 1.2 nc Q gd Gate Drain Charge 3.6 nc t D(on) Turn-On DelayTime 13.2 ns t r Turn-On Rise Time V GS =-4.5V, V DS =-1V, R L =2.5Ω, 21 ns t D(off) Turn-Off DelayTime R GEN =3Ω 93 ns t f Turn-Off Fall Time 46 ns t rr Body Diode Reverse Recovery Time I F =-4A, di/dt=1a/µs 41 ns Q rr Body Diode Reverse Recovery Charge I F =-4A, di/dt=1a/µs 19.3 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 1s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The SOA curve provides a single pulse rating.

3 AO3411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V -3.V -4.5V 1 8 V DS =-5V V -2.V 6 -I D (A) 1 -I D (A) C 5 V GS =-1.5V 2 25 C R DS(ON) (mω) V DS (Volts) Fig 1: On-Region Characteristics V GS =-1.8V V GS =-2.5V V GS =-4.5V I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance V GS (Volts) Figure 2: Transfer Characteristics E+1 I D =-4A, V GS =-4.5V I D =-3A, V GS =-1.8V I D =-4A, V GS =-2.5V Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) C I D =-4A -I S (A) 1.E+ 1.E-1 1.E-2 1.E C 25 C C 1.E-4 1.E V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.E V SD (Volts) Figure 6: Body-Diode Characteristics

4 AO3411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 V DS =-1V I D =-4A V GS (Volts) Capacitance (pf) C oss C iss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps) T J(Max) =15 C T A =25 C R DS(ON) limited 1s 1s.1s DC 1µs 1ms 1ms 1µs V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) =15 C T A =25 C Pulse Width (s) Figure 1: Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.5,.3,.1,.5,.2,.1, single pulse Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance P D T on T off

5 SOT-23 Package Data θ SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A A1..1 A b C D E E e.95 BSC e1 1.9 BSC L.4.6 θ GAUGE PLANE SEATING PLANE NOTE: 1. LEAD FINISH: 15 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±.1 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :.1 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN P N D L N SOT-23 PART NO. CODE PART NO. CODE AO3411 AB NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A

6 ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Tape and Reel Data SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation

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