AO3411 P-Channel Enhancement Mode Field Effect Transistor
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1 January 23 AO3411 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features V DS (V) = -2V I D = -4.4 A R DS(ON) < 45mΩ (V GS = -4.5V) R DS(ON) < 6mΩ (V GS = -2.5V) R DS(ON) < 85mΩ (V GS = -1.8V) TO-236 (SOT-23) Top View D G S D G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum -2 ±8 Continuous Drain T A =25 C -4.4 Current A T A =7 C I D -3.5 Pulsed Drain Current B I DM -3 T A =25 C 1.4 P D Power Dissipation A T A =7 C.9 Junction and Storage Temperature Range T J, T STG -55 to 15 Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 1s 65 9 C/W R Maximum Junction-to-Ambient A θja Steady-State C/W Maximum Junction-to-Lead C Steady-State R θjl 43 6 C/W
2 AO3411 Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-25µA, V GS =V -2 V I DSS Zero Gate Voltage Drain Current V DS =-16V, V GS =V -1 T J =55 C -5 µa I GSS Gate-Body leakage current V DS =V, V GS =±8V ±1 na V GS(th) Gate Threshold Voltage V DS =V GS I D =-25µA V I D(ON) On state drain current V GS =-4.5V, V DS =-5V -25 A V GS =-4.5V, I D =-4A mω T J =125 C 5 6 R DS(ON) Static Drain-Source On-Resistance V GS =-2.5V, I D =-4A 48 6 mω V GS =-1.8V, I D =-2A mω g FS Forward Transconductance V DS =-5V, I D =-4A 7 13 S V SD Diode Forward Voltage I S =-1A,V GS =V V I S Maximum Body-Diode Continuous Current -2.2 A DYNAMIC PARAMETERS C iss Input Capacitance 118 pf C oss Output Capacitance V GS =V, V DS =-1V, f=1mhz 176 pf C rss Reverse Transfer Capacitance 142 pf R g Gate resistance V GS =V, V DS =V, f=1mhz 15 Ω SWITCHING PARAMETERS Q g Total Gate Charge 13.1 nc Q gs Gate Source Charge V GS =-4.5V, V DS =-1V, I D =-4A 1.2 nc Q gd Gate Drain Charge 3.6 nc t D(on) Turn-On DelayTime 13.2 ns t r Turn-On Rise Time V GS =-4.5V, V DS =-1V, R L =2.5Ω, 21 ns t D(off) Turn-Off DelayTime R GEN =3Ω 93 ns t f Turn-Off Fall Time 46 ns t rr Body Diode Reverse Recovery Time I F =-4A, di/dt=1a/µs 41 ns Q rr Body Diode Reverse Recovery Charge I F =-4A, di/dt=1a/µs 19.3 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 1s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The SOA curve provides a single pulse rating.
3 AO3411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS V -3.V -4.5V 1 8 V DS =-5V V -2.V 6 -I D (A) 1 -I D (A) C 5 V GS =-1.5V 2 25 C R DS(ON) (mω) V DS (Volts) Fig 1: On-Region Characteristics V GS =-1.8V V GS =-2.5V V GS =-4.5V I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance V GS (Volts) Figure 2: Transfer Characteristics E+1 I D =-4A, V GS =-4.5V I D =-3A, V GS =-1.8V I D =-4A, V GS =-2.5V Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature R DS(ON) (mω) C I D =-4A -I S (A) 1.E+ 1.E-1 1.E-2 1.E C 25 C C 1.E-4 1.E V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.E V SD (Volts) Figure 6: Body-Diode Characteristics
4 AO3411 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 V DS =-1V I D =-4A V GS (Volts) Capacitance (pf) C oss C iss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps) T J(Max) =15 C T A =25 C R DS(ON) limited 1s 1s.1s DC 1µs 1ms 1ms 1µs V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) =15 C T A =25 C Pulse Width (s) Figure 1: Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja =9 C/W Single Pulse In descending order D=.5,.3,.1,.5,.2,.1, single pulse Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance P D T on T off
5 SOT-23 Package Data θ SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A A1..1 A b C D E E e.95 BSC e1 1.9 BSC L.4.6 θ GAUGE PLANE SEATING PLANE NOTE: 1. LEAD FINISH: 15 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±.1 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :.1 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDATION OF LAND PATTERN P N D L N SOT-23 PART NO. CODE PART NO. CODE AO3411 AB NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. Rev. A
6 ALPHA & OMEGA SEMICONDUCTOR, INC. SOT-23 Tape and Reel Data SOT-23 Carrier Tape SOT-23 Reel SOT-23 Tape Leader / Trailer & Orientation
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationMaximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
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TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationMaximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
More informationPreliminary data. Type Package Ordering Code Tape and Reel Information BSS 192 P SOT89 Q67042-S4168 -
SIPMOS Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Gate pin Product Summary V DS -25 V R DS(on) 2 Ω I D -.9 Drain pin 2 Source pin 3 3 SOT89 2 2 VPS562 Type Package
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OptiMOS &!Power-Transistor Feature % N-Channel % Enhancement mode % Logic Level % High Current Rating % Excellent Gate Charge x R DS(on) product (FOM) %!Superior thermal resistance %!175 C operating temperature
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More information-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
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OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS V R DS(on),max
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationProduct Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More informationSymbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V 10V I DM Pulsed Drain Current
Main Product Characteristics: V DSS 60V R DS (on) 70mΩ(typ) I D 2.7A SOT23 Marking and pin Assignment Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed for PWM,
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BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
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OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level Product Summary V DS 6 V R DS(on),max 3.5 Ω I D.28 A dv /dt rated Pb-free lead-plating; RoHS compliant Qualified according
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Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap V DSS, V R DS(on), 9 mω I D,.7 A EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed
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SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
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OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
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More informationMaximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current I D. I D puls 0.68.
SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Gate pin1 Product Summary V DS 1 V R DS(on) 6 Ω I D.17 Drain pin 3 Source pin 2 PG-SOT23 3 1 2 VPS5161 Type Package
More informationSOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage V GS(th) < 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary
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Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
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IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
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