GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

Transcription

1 Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 jmax = 3A R DS(ON) =. = 1 V D G Absolute Maximum Ratings Parameter Symbol GP1M3A8H(H) GP1M3A8F(H) Unit Drain-Source Voltage S 8 V Gate-Source Voltage ±3 V Continuous Drain Current T C = * A T C = * A Pulsed Drain Current (Note 1) M 1 1* A Single Pulse Avalanche Energy (Note ) E AS 83 mj Repetitive Avalanche Current (Note 1) I AR 3 A Repetitive Avalanche Energy (Note 1) E AR 9. mj Power Dissipation Device Package Marking Remark GP1M3A8H/ GP1M3A8F TO- / TO-F GP1M3A8H/ GP1M3A8F RoHS TO- / TO-F Halogen Free T C = W P D Derate above W/ Peak Diode Recovery dv/dt (Note 3) dv/dt.5 V/ns Operating Junction and Storage Temperature Range T J, T STG -55~15 Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds T L 3 * Limited only by maximum junction temperature Thermal Characteristics Parameter Symbol GP1M3A8H(H) GP1M3A8F(H) Unit Maximum Thermal resistance, Junction-to-Case R JC /W Maximum Thermal resistance, Junction-to-Ambient R JA.5.5 /W 1/7 S

2 Electrical Characteristics : T C =5, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BS = V, = 5 µa V = 8 V, = V µa Zero Gate Voltage Drain Current SS = V, T C = 15 C µa Forward Gate-Source Leakage Current I GSSF = 3 V, = V na Reverse Gate-Source Leakage Current I GSSR = -3 V, = V na ON Gate Threshold Voltage (th) =, = 5 µa -- V Drain-Source On-Resistance R DS(on) = 1 V, = 1.5 A Forward Transconductance (Note ) g FS = 3 V, = 1.5 A S DYNAMIC Input Capacitance C iss = 5 V, = V, pf Output Capacitance C oss f = 1. MHz pf Reverse Transfer Capacitance C rss pf SWITCHING Turn-On Delay Time (Note,5) t d(on) V DD = V, = 3 A, ns Turn-On Rise Time (Note,5) t r R G = 5 Ω ns Turn-Off Delay Time (Note,5) t d(off) ns Turn-Off Fall Time (Note,5) t f ns Total Gate Charge (Note,5) Q g = V, = 3 A, nc Gate-Source Charge (Note,5) Q gs = 1 V nc Gate-Drain Charge (Note,5) Q gd nc SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current I S A Maximum Pulsed Drain-Source Diode Forward Current I SM A Drain-Source Diode Forward Voltage V SD = V, I S = 3 A V Reverse Recovery Time (Note ) t rr = V, I S = 3 A ns Reverse Recovery Charge (Note ) Q rr di F / dt = 1 A/µs µc Note : 1. Repeated rating : Pulse width limited by safe operating area. L= 59mH, I AS = 3A, V DD = 5V, R G = 5Ω, Starting T J = 5 3 I SD 3A, di/dt A/µs, V DD B, Starting T J = 5. Pulse Test :Pulse width 3µs, Duty Cycle % 5. Essentially Independent of Operating Temperature Typical Characteristics /7

3 Drain Current, 8 Top =15.V 1.V 8.V 7.V.5V.V Bottom 5.V Drain Current, 1 1 = 3V 5 μ s Pulse Test T C = 5. 5μ s Pulse Test 3 5 Drain-Source Voltage, Gate-Source Voltage, Drain-Source On-Resistance R DS(ON) [Ω ] 5 3 T J = 5 = 1V = V Reverse Drain Current, R = V 5μ s Pulse Test Drain Current, Source-Drain Voltage, V SD Capacitance [pf] C rss C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C iss = V f = 1 MHz Gate-Source Voltage, = 3A = V = 1V = V Drain-Source Voltage, Total Gate Charge, Q G [nc] 3/7

4 1. 3. Drain-Source Breakdown Voltage BS, (Normalized) = V = 5 μ A Drain-Source On-Resistance R DS(ON), (Normalized) = 1 V = 1.5 A Junction Temperature,T J [ o C] Junction Temperature, T J [ o C] 1.5 Drain Current, 3 1 Gate Threshold Voltage V TH, (Normalized) 1..5 = 1 V = 5 A Case Temperature, T C [ ] Junction Temperature, T J [ o C] GP1M3A8H(H) GP1M3A8F(H) Drain Current, us 1-1 T C = 5 o C T J = 15 o C Single Pulse Operation in This Area is Limited by R DS(on) DC 1 ms 1 ms 1 ms Drain Current, I D us 1 ms 1 ms 1 ms DC 1-1 T C = 5 o C T J = 15 o C Single Pulse Operation in This Area is Limited by R DS(on) Drain-Source Voltage, Drain-Source Voltage, DS V /7

5 GP1M3A8H(H) Duty=.5 Transient thermal impedance (t) single pulse P DM t T Duty = t/t (t) = 1.33 /W Max Pulse Width, t [sec] GP1M3A8F(H) Duty=.5 Transient thermal impedance (t) single pulse P DM t T Duty = t/t (t) = 3.9 /W Max Pulse Width, t [sec] 5/7

6 TO-AB-3L MECHANICAL DATA /7

7 TO-F-3L MECHANICAL DATA SYMBOL INCHES MILLIMETERS MIN MAX MIN MAX A b C D E e.1 TYP..5TYP. H J L φq b L Q F NOTES 7/7