Product Summary: BVDSS 30V RDSON (MAX.) 50mΩ 4.5A I D. Pb Free Lead Plating & Halogen Free EMB50P03J

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Donald O’Connor’
5 years ago
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1 P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS V RDSON (MAX.) ID 5mΩ.5A Pb Free Lead Plating & Halogen Free D G S ABSOLUTE MAXIMUM RATINGS (T A = 5 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage V GS ± V Continuous Drain Current T A = 5 C I D.5 T A = 7 C.5 A Pulsed Drain Current I DM 8 Power Dissipation T A = 5 C P D 5 T A = 7 C.8 W Operating Junction & Storage Temperature Range T j, T stg 55 to C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction to Ambient R JA C / W Pulse width limited by maximum junction temperature. Duty cycle % p.

2 ELECTRICAL CHARACTERISTICS (T A = 5 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain Source Breakdown Voltage V (BR)DSS V GS = V, I D = 5 A V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 5 A.5 Gate Body Leakage I GSS V DS = V, V GS = ±V ± na Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V A V DS = V, V GS = V, T J = 5 C On State Drain Current I D(ON) V DS = 5V, V GS = V.5 A Drain Source On State Resistance R DS(ON) V GS = V, I D =.5A 5 mω V GS =.5V, I D =.5A 85 Forward Transconductance g fs V DS = 5V, I D =.5A S DYNAMIC Input Capacitance C iss Output Capacitance C oss V GS = V, V DS = V, f = MHz Reverse Transfer Capacitance C rss 7 Total Gate Charge, Q g Gate Source Charge, Gate Drain Charge, Q gs Q gd V DS = V, V GS = V, I D =.5A..5 Turn On Delay Time, t d(on) Rise Time, t r V DS = V, Turn Off Delay Time, t d(off) I D = A, V GS = V, R GS = Ω Fall Time, t f 8 pf nc ns SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 5 C) Continuous Current I S A Pulsed Current I SM Forward Voltage V SD I F = I S, V GS = V V Pulse test : Pulse Width sec, Duty Cycle %. Independent of operating temperature. Pulse width limited by maximum junction temperature. p.

3 TYPICAL CHARACTERISTICS I D Drain Current( A ) V = V GS On Region Characteristics 8.V 7.V.V.5V V DS Drain Source Voltage( V ) R DS(ON) Normalized Drain Source on Resistance V GS =.5V On Resistance Variation with Drain Current and Gate Voltage.V 7.V 8.V V I Drain Current( A ) D. On Resistance Variation with Temperature. On Resistance Variation with Gate Source Voltage R DS(ON) Normalized Drain Source on Resistance...8 I D = A V GS= V R on Resistance( Ω ) DS(on)..8. I D= A T A = 5 C T = 5 A C T Junction Temperature( C ) 5 8 V Gate Source Voltage( V ) GS V DS= V Transfer Characteristics T = 55 A C 5 C V SD=V Body Diode Forward Voltage Variation with Source Current and Temperature I D Drain Current( A ) 5 C I S Reverse Drain Current( A )... T A = 5 C 5 C 55 C 5 V,Gate Source Voltage( V ) GS V Body Diode Forward Voltage( V ) SD. p.

4 V GS,Gate Source Voltage( V ) I D = A 8 Gate Charge Characteristics V DS = 5V V V 8 Q g,gate Charge( nc ) Capacitance( pf ) Capacitance Characteristics Ciss Coss Crss 5 V DS Drain Source Voltage( V ) 5 f = MHZ V GS = V I D,Drain Current( A ) R DS(ON) LIMIT Maximum Safe Operation Area. V GS = V R θja= C/W T A. = 5 C. V DS,Drain Source Voltage( V ) DC s s ms ms μs ms 5 Power( W ) 5 5. Single Pulse Maximum Power Dissipation R θ JA = C/W T A= 5 C. Single Pulse Time( SEC ) D=.5 Transient Thermal Response Curve r ( t ),Normalized Effectivce Transient Thermal Resistance t, Time( ms ) R (t)= r(t) * θja Rθ JA R θja = C/W P(pk) t t T T A = P * j R θja (t) Duty Cycle,D= t / t p.

5 Ordering & Marking Information: Device Name: for SOT : Device Code, for ABC: Date Code Outline Drawing Dimension in mm Dimension A A A b C D E E e e L Min Typ Max Footprint p.5

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel