N- & P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel m 7A annel m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel annel UNITS Drain-Source Voltage V DS V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current T C = 25 C 7-6 T C = 70 C I D 6-5 A Pulsed Drain Current I DM Power Dissipation T C = 25 C 2 T C = 70 C Junction & Storage Temperature Range T j, T stg -55 to 50 C P D.3 W THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient R θja 62.5 C / W Pulse width limited by maximum junction temperature. 2 Duty cycle % ELECTRICAL CHARACTERISTICS (T C = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS MIN TYP MAX UNIT V GS = 0V, I D = 250µA 30 Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = -250µA -30 Gate Threshold Voltage V GS(th) V DS = V GS, I D = 250µA V DS = V GS, I D = -250µA V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V V DS = 0V, V GS = ±20V ±00 ±00 na

2 V DS = 24V, V GS = 0V Zero Gate Voltage Drain Current I DSS V DS = -24V, V GS = 0V V DS = 20V, V GS = 0V, T J = 55 C - 0 µa V DS = -20V, V GS = 0V, T J = 55 C -0 On-State Drain Current I D(ON) V DS = 5V, V GS = 0V V DS =-5V, V GS = -0V A V GS = 4.5V, I D = 6A Drain-Source Resistance On-State R DS(ON) V GS = -4.5V, I D = -5A V GS = 0V, I D = 7A m V GS = -0V, I D = -6A Forward Transconductance g fs V DS = 5V, I D = 7A V DS = -5V, I D = -6A 6 3 S DYNAMIC Input Capacitance C iss annel Output Capacitance C oss V GS = 0V, V DS = 5V, f = MHz annel pf Reverse Transfer Capacitance C rss V GS = 0V, V DS = -5V, f = MHz Total Gate Charge 2 Q g annel V DS = 0.5V (BR)DSS, V GS = 0V, Gate-Source Charge 2 Gate-Drain Charge 2 Q gs Q gd I D = 7A annel V DS = 0.5V (BR)DSS, V GS = -0V, I D = -6A nc Turn-On Delay Time 2 Rise Time 2 t d(on) t r annel V DD = 0V I D A, V GS = 0V, R GEN = Turn-Off Delay Time 2 Fall Time 2 t d(off) t f annel V DD = -0V I D -A, V GS = -0V, R GEN = ns 2

3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 C) Continuous Current I S Pulsed Current 3 I SM A Forward Voltage V SD I F = A, V GS = 0V I F = -A, V GS = 0V - V Pulse test : Pulse Width 300 µsec, Duty Cycle 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH, DATE CODE or LOT # Orders for parts with plating can be placed using the PXXXXXXG parts name. 3

4 N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 00 0 V GS = 0V T = 25 C A Is - Reverse Drain Current(A) C -55 C V - Body Diode Forward Voltage(V) SD.4 4

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7 P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 00 -Is - Reverse Drain Current(A) V GS = 0V T A = 25 C 25 C -55 C V - Body Diode Forward Voltage(V) SD.4 7

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9 SOIC-8(D) MECHANICAL DATA Dimension mm Min. Typ. Max. Dimension mm Min. Typ. Max. A H B I C J 0.22 D K E.27 L F M G N J F D E G I H K B C A 9