Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS

Transcription

1 N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVSS RSON (MX.) I 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNIT Gate Source Voltage V GS ± V Continuous rain Current T C = 5 C T C = C 8 I Pulsed rain Current I M 3 valanche Current I S valanche Energy L =.mh, I=, RG=5Ω E S 7. Repetitive valanche Energy L =.5mH E R 3.6 mj Power issipation T C = 5 C P 6.6 T C = C 6.6 W Operating Junction & Storage Temperature Range T j, T stg 55 to 5 C THERML RESISTNCE RTINGS THERML RESISTNCE SYMBOL TYPICL MXIMUM UNIT Junction to Case R JC 7.5 Junction to mbient R J 8 C / W Pulse width limited by maximum junction temperature. uty cycle % p.

2 ELECTRICL CHRCTERISTICS (T C = 5 C, Unless Otherwise Noted) PRMETER SYMBOL TEST CONITIONS LIMITS UNIT MIN TYP MX STTIC rain Source Breakdown Voltage V (BR)SS V GS = V, I = 5 6 V Gate Threshold Voltage V GS(th) V S = V GS, I = Gate Body Leakage I GSS V S = V, V GS = ±V ± n Zero Gate Voltage rain Current I SS V S = 48V, V GS = V V S = 4V, V GS = V, T J = 5 C 5 On State rain Current I (ON) V S = V, rain Source On State Resistance R S(ON), I = 5 6 V GS = 5V, I = mω Forward Transconductance g fs V S = 5V, I = 9 S YNMIC Input Capacitance C iss Output Capacitance C V GS = V, V S = V, f = MHz oss pf Reverse Transfer Capacitance C rss 44 Gate Resistance R g V GS = 5mV, V S = V, f = MHz.5 Ω Total Gate Charge, Q g V S = V,, 3.8 Gate Source Charge, Q gs I =.8 Gate rain Charge, Q gd 4. nc Turn On elay Time, t d(on) Rise Time, t r V S = V, 7.5 Turn Off elay Time, t d(off) I =,, R GS = 6Ω 8 ns Fall Time, t f 6 SOURCE RIN IOE RTINGS N CHRCTERISTICS (T C = 5 C) Continuous Current I S Pulsed Current 3 I SM 48 Forward Voltage V S I F = I S, V GS = V.3 V Reverse Recovery Time t rr I F = 5, dl F /dt = / S 5 ns Reverse Recovery Charge Q rr 8 nc Pulse test : Pulse Width 3 sec, uty Cycle %. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. p.

3 Ordering & Marking Information: evice Name: for IPK (TO 5) B6 N6 BCEFG BCEFG: ate Code B6N6: evice Name Outline rawing E E C L B L H 3 P B imension in mm imension B B C 3 E E H L L P Min Max p.3

4 TYPICL CHRCTERISTICS 3 On Region Characteristics 7V 6V.8 On Resistance Variation with rain Current and Gate Voltage I rain Current( ) V R S(ON) Normalized rain Source On Resistance.6.4. V GS = 5. V 6. V 7. V V V S rain Source Voltage( V ).8 6 I rain Current( ) R S(on) Normalized rain Source On Resistance On Resistance Variation with Temperature I = R S(ON) On Resistance( Ω ) On Resistance Variation with Gate Source Voltage I = 5 T = 5 C T = 5 C T Junction Temperature ( C) J V GS Gate Source Voltage( V ) I rain Current( ) V S = 5V T = 55 C 5 C 5 C Is Reverse rain Current( )... V GS = V Body iode Forward Voltage Variation with Source Current and Temperature T = 5 C 5 C 55 C V S Body iode Forward Voltage( V ) p.4

5 V GS Gate to Source Voltage(V) I rain Current( ) I = R S(ON) Gate Charge Characteristics V S = 5V 3V Q g Gate Charge( nc ) Limit R JC = 7.5 C/W T C = 5 C Maximum Safe Operating rea C s V S rain Source Voltage( V ) ms ms s μs ms 6 Capacitance(pF) P( pk ),Peak Transient Power( W ) Ciss Capacitance Characteristics Coss Crss 3 4 V S rain Source Voltage( V ) Maximum Power issipation R θjc = 7.5 C/W T = 5 C f = MHz V GS = V t,time ( sec ) uty Cycle =.5 Transient Thermal Response Curve. r(t),normalized Effective Transient Thermal Resistance Notes: P M t t t.uty Cycle, = t.r θjc=7.5 C/W 3.T T C = P * R θjc (t) J. 4 3 t,time (sec) 4.R θjc(t)=r(t) * RθJC p.5