SMPS MOSFET. V DSS R DS(on) max I D

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1 P SMPS MOSFET IRF7470PbF ppications High Frequency C-C Converters with Synchronous Rectification Lead-Free HEXFET Power MOSFET V SS R S(on) max I 40V 3mΩ Benefits Utra-Low Gate Impedance Very Low R S(on) at 4.5V V GS Fuy Characterized vaanche Votage and Current S S S G 4 5 Top View SO-8 bsoute Maximum Ratings Symbo Parameter Max. Units V S rain-source Votage 40 V V GS Gate-to-Source Votage ± 2 V T = 25 C Continuous rain Current, V V T = 70 C Continuous rain Current, V V 8.5 I M Pused rain Current 85 = 25 C Maximum Power issipationƒ 2.5 W = 70 C Maximum Power issipationƒ.6 W Linear erating Factor 0.02 W/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Symbo Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 8//04

2 IRF7470PbF T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 40 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0.04 V/ C Reference to 25 C, I = m V GS = V, I = R S(on) Static rain-to-source On-Resistance 5 mω V GS = 4.5V, I = V GS = 2.8V, I = 5.0 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ I SS rain-to-source Leakage Current 20 V µ S = 32V, V GS = 0V 0 V S = 32V, V GS = 0V, T J = 25C I GSS Gate-to-Source Forward Leakage 200 V GS = 2V Gate-to-Source Reverse Leakage -200 n V GS = -2V T J = 25 C (uness otherwise specified) Symbo Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 27 S V S = 20V, I = 8.0 Q g Tota Gate Charge I = 8.0 Q gs Gate-to-Source Charge nc V S = 20V Q gd Gate-to-rain ("Mier") Charge V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, V S = 6V t d(on) Turn-On eay Time V = 20V t r Rise Time.9 I ns = 8.0 t d(off) Turn-Off eay Time 2 R G =.8Ω t f Fa Time 3.2 V GS = 4.5V ƒ C iss Input Capacitance 3430 V GS = 0V C oss Output Capacitance 690 V S = 20V C rss Reverse Transfer Capacitance 4 pf ƒ =.0MHz vaanche Characteristics Symbo Parameter Typ. Max. Units E S Singe Puse vaanche Energy 300 mj I R vaanche Current 8.0 iode Characteristics Symbo Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.3 (Body iode) showing the G I SM Pused Source Current integra reverse 85 (Body iode) p-n junction diode. S V T J = 25 C, I S = 8.0, V GS = 0V ƒ V S iode Forward Votage 0.65 T J = 25 C, I S = 8.0, V GS = 0V t rr Reverse Recovery Time 72 ns T J = 25 C, I F = 8.0, V R = 20V Q rr Reverse Recovery Charge nc di/dt = 0/µs ƒ t rr Reverse Recovery Time 76 ns T J = 25 C, I F = 8.0, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0/µs ƒ 2

3 IRF7470PbF I, rain-to-source Current () 00 0 VGS TOP 5V V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V 2.0V I, rain-to-source Current () 0 VGS TOP 5V V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V 2.0V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T J = 50 C T J = 25 C V S= 25V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.5 I = V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF7470PbF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss V GS, Gate-to-Source Votage (V) I = 8.0 V S = 32V V S = 20V 0 V S, rain-to-source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Votage (V) I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) us 0us ms T = 25 C ms TJ = 50 C Singe Puse 0. 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea 4

5 Fig 6. On-Resistance Vs. rain Current IRF7470PbF.0 V S R I, rain Current () T C, Case Temperature ( C) Fig a. Switching Time Test Circuit V S 90% R G V GS V Puse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f + - V Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance (Ω) IRF7470PbF R S(on), rain-to -Source On Resistance (Ω) 0.06 V GS = 2.7V 0.04 I = 0.05 V GS = 4.5V V GS = V I, rain Current () V GS, Gate -to -Source Votage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Votage Current Reguator Same Type as.u.t. 2V I S V GS.2µF 50KΩ 3m.3µF I G.U.T. I Current Samping Resistors + V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I S 0.0Ω Q G Q G Charge 5V RIVER + - V E S, Singe Puse vaanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 4a&b. Uncamped Inductive Test circuit Fig 4c. Maximum vaanche Energy and Waveforms Vs. rain Current 6

7 IRF7470PbF SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B H 0.25 [.0] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.0] C B 0. [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 T E COE (YWW) P = E S IGNT E S L E -F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 7

8 IRF7470PbF SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 9.4mH R G = 25Ω, I S = 8.0. ƒ Puse width 400µs; duty cyce 2%. When mounted on inch square copper board, t< sec ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information.08/04 8

9 Mouser Eectronics uthorized istributor Cick to View Pricing, Inventory, eivery & Lifecyce Information: Infineon: IRF7470PBF IRF7470TRPBF

SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units

SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units P- 95032 SMPS MOSFET ppications High Frequency C-C Isoated Converters with Synchronous Rectification for Teecom and Industria use High Frequency Buck Converters for Computer Processor Power Lead-Free IRF7457PbF