Top View SO-8. 1

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Derek Briggs
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1 Generation V Technoogy Utra Low OnResistance PChanne Mosfet urface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast witching escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. The O8 has been modified through a customized eadframe for enhanced therma characteristics and mutipedie capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. Power dissipation of greater than 0.8W is possibe in a typica PCB mount appication. G 2 3 Top View P IRF7404 HEXFET Power MOFET O8 V = 20V R (on) = 0.040Ω bsoute Maximum Ratings Parameter Max. Units T = 25 C 0 ec. Pused rain Current, V 4.5V 7.7 T = 25 C Continuous rain Current, V 4.5V 6.7 T = 70 C Continuous rain Current, V 4.5V 5.4 I M Pused rain Current 27 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V G Gatetoource Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T TG Junction and torage Temperature Range 55 to 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 50 C/W /3/06

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR) raintoource Breakdown Votage 20 V V G = 0V, I = 250µ V (BR) / T J Breakdown Votage Temp. Coefficient 0.02 V/ C Reference to 25 C, I = m R (ON) tatic raintoource OnResistance V G = 4.5V, I = 3.2 ƒ Ω V G = 2.7V, I = 2.7 ƒ V G(th) Gate Threshod Votage 0.70 V V = V G, I = 250µ g fs Forward Transconductance 6.8 V = 5V, I = 3.2 I raintoource Leakage Current.0 V = 6V, V G = 0V µ 25 V = 6V, V G = 0V, T J = 25 C Gatetoource Forward Leakage 00 V G = 2V I G n Gatetoource Reverse Leakage 00 V G = 2V Q g Tota Gate Charge 50 I = 3.2 Q gs Gatetoource Charge 5.5 nc V = 6V Q gd Gatetorain ("Mier") Charge 2 V G = 4.5V, ee Fig. 6 and 2 ƒ t d(on) TurnOn eay Time 4 V = 0V t r Rise Time 32 I = 3.2 ns t d(off) TurnOff eay Time 00 R G = 6.0Ω t f Fa Time 65 R = 3.Ω, ee Fig. 0 ƒ L Interna rain Inductance 2.5 L Interna ource Inductance 4.0 Between ead tip and center of die contact C iss Input Capacitance 500 V G = 0V C oss Output Capacitance 730 pf V = 5V C rss Reverse Transfer Capacitance 340 ƒ =.0MHz, ee Fig. 5 ourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbo 3. (Body iode) showing the I M Pused ource Current integra reverse G 27 (Body iode) pn junction diode. V iode Forward Votage.0 V T J = 25 C, I = 2.0, V G = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 3.2 Q rr Reverse RecoveryCharge 7 0 µc di/dt = 00/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L L ) nh G Notes: Repetitive rating; puse width imited by max. junction temperature. ( ee fig. ) ƒ Puse width 300µs; duty cyce 2%. I 3.2, di/dt 65/µs, V V (BR), T J 50 C urface mounted on FR4 board, t 0sec. 2

3 I, raintoource Current () VG TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V I, raintoource Current () VG TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20µs PULE WITH 0. T J = 25 C V, raintoource Votage (V) 20µs PULE WITH 0. T J = 50 C V, raintoource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintoource Current () 00 0 T J = 25 C T J = 50 C V = 5V 20µs PULE WITH V, Gatetoource Votage (V) G R (on), raintoource On Resistance (Normaized) I = 5.3 V G = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 C, Capacitance (pf) V G = 0V, f = MHz C iss = C gs C gd, C ds HORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss V, raintoource Votage (V) V G, Gatetoource Votage (V) I = 3.2 V = 6V FOR TET CIRCUIT 0 EE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintoource Votage Fig 6. Typica Gate Charge Vs. Gatetoource Votage I, Reverse rain Current () 00 0 T = 50 C J T J = 25 C V G = 0V V, ourcetorain Votage (V) I, rain Current () 00 0 OPERTION IN THI RE LIMITE BY R (on) ms 0ms T = 25 C TJ = 50 C inge Puse V, raintoource Votage (V) Fig 7. Typica ourcerain iode Forward Votage Fig 8. Maximum afe Operating rea 4

5 8.0 V R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. mbient Temperature R G V G 0V V G Puse Width µs uty Factor 0. %.U.T. Fig 0a. witching Time Test Circuit V G t d(on) t r t d(off) t f 0% 90% V Fig 0b. witching Time Waveforms V 00 Therma Response (Z thj ) 0 = INGLE PULE t2 (THERML REPONE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, Junctiontombient 5

6 Current Reguator ame Type as.u.t. 50KΩ 4.5 V Q G Q G Q G 2V.2µF.3µF.U.T. V V G V G 3m Charge I G I Current amping Resistors Fig 2a. Basic Gate Charge Waveform Fig 2b. Gate Charge Test Circuit 6

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low tray Inductance Ground Pane Low Leakage Inductance Current Transformer ** V G * R G dv/dt controed by R G I controed by uty Factor "".U.T. evice Under Test * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period V G =0V [ ] ***.U.T. I Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Forward rop V [ ] Rippe 5% *** V G = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFET I [ ] 7

8 O8 Package Outine E 6 6X e B H 0.25 [.00] IM INCHE MILLIMETER MIN MX MIN MX b c E e.050 BIC.27 BIC e.025 BIC BIC H K L y e C y K x 45 8X b 0.25 [.00] C B O8 Part Marking 0.0 [.004] NOTE:. IMENIONING & TOLERNCING PER ME Y4.5M CONT ROLLING IMEN ION: MILLIMET ER 3. IMENION RE HOWN IN MILLIMETER [INCHE]. 4. OUTLINE CONFORM TO JEEC OUTLINE M IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.5 [.006]. 6 IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.25 [.00]. 7 IMENION I THE LENGTH OF LE FOR OLERING TO UBTRTE. 8X L 8X c [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THI I N IRF70 (MOFET) INTERNTIONL RECTIFIER LOGO XXXX F70 TE COE (YWW) P = EIGNTE LEFREE PROUCT (OPTIONL) Y = LT IGIT OF THE YER WW = WEEK = EMBLY ITE COE LOT COE PRT NUMBER IR WORL HEQURTER: 233 Kansas t., E egundo, Caifornia 90245, U Te: (30) TC Fax: (30) Visit us at for saes contact information. /06 8

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free P - 9572 IRF7220PbF HEXFET Power MOFET Utra Low On-Resistance P-Channe MOFET urface Mount vaiabe in Tape & Ree Lead-Free G 2 3 8 7 4 5 V = -4V R (on) = 0.02Ω escription These P-Channe MOFETs from Internationa