IRF7779L2TRPbF IRF7779L2TR1PbF

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1 l RoH Compliant, Halogen Free l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter Primary witch ocket l Optimized for ynchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l ual ided Cooling Compatible l Compatible with existing urface Mount Techniques l Industrial Qualified P IRF7779L2TRPbF IRF7779L2TRPbF irectfet Power MOFET Typical values (unless otherwise specified) G V V G R (on) 50V min ±20V max 9.0mΩ@ V Q g tot Q gd V gs(th) 97nC 33nC 4.0V pplicable irectfet Outline and ubstrate Outline irectfet IOMETRIC escription The IRF7779L2TR/TRPbF combines the latest HEXFET Power MOFET ilicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a 2 PK and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Notes: Typical R (on), (mω) B C M2 M4 L4 L6 L8 bsolute Maximum Ratings Parameter Max. Units V rain-to-ource Voltage 50 V V G Gate-to-ource Voltage ±20 T C = 25 C Continuous rain Current, V V (ilicon Limited)f 67 T C = 0 C Continuous rain Current, V V (ilicon Limited)f 47 T = 25 C Continuous rain Current, V V (ilicon Limited)e T C = 25 C Continuous rain Current, V V (Package Limited) f 375 I M Pulsed rain Current g 270 E ingle Pulse valanche Energy h 270 mj I R valanche Currentg I = 40 T J = 25 C T J = 25 C V G, Gate-to-ource Voltage (V) Fig. Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. ƒ urface mounted on in. square Cu board, steady state. Typical R (on) ( mω) L8 T C = 25 C V G = 7.0V V G = 8.0V V G = V V G = 5V I, rain Current () Fig 2. Typical On-Resistance vs. rain Current T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. tarting T J = 25 C, L = 0.33mH, R G = 25Ω, I = 40. /7/09

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV rain-to-ource Breakdown Voltage 50 V V G = 0V, I = 250μ ΔΒV /ΔT J Breakdown Voltage Temp. Coefficient 0.3 V/ C Reference to 25 C, I = 2m R (on) tatic rain-to-ource On-Resistance 9.0 mω V G = V, I = 40 i V G(th) Gate Threshold Voltage V V = V G, I = 250μ ΔV G(th) /ΔT J Gate Threshold Voltage Coefficient -5 mv/ C I rain-to-ource Leakage Current 20 μ V = 50V, V G = 0V 250 V = 20V, V G = 0V, T J = 25 C I G Gate-to-ource Forward Leakage 0 n V G = 20V Gate-to-ource Reverse Leakage -0 V G = -20V gfs Forward Transconductance 83 V = 50V, I = 40 Q g Total Gate Charge Q gs Pre-Vth Gate-to-ource Charge 27 V = 75V Q gs2 Post-Vth Gate-to-ource Charge 6.9 nc V G = V Q gd Gate-to-rain Charge I = 40 Q godr Gate Charge Overdrive 30 ee Fig. 9 Q sw witch Charge (Q gs2 Q gd ) 40 Q oss Output Charge 39 nc V = 6V, V G = 0V R G Gate Resistance.5 Ω t d(on) Turn-On elay Time 6 V = 75V, V G = Vi t r Rise Time 9 I = 40 t d(off) Turn-Off elay Time 36 ns R G =.8Ω t f Fall Time 2 C iss Input Capacitance 6660 V G = 0V C oss Output Capacitance 840 pf V = 25V C rss Reverse Transfer Capacitance 80 ƒ =.0MHz C oss Output Capacitance 5620 V G = 0V, V =.0V, f=.0mhz C oss Output Capacitance 400 V G = 0V, V = 20V, f=.0mhz iode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current 67 MOFET symbol (Body iode) showing the I M Pulsed ource Current 270 integral reverse (Body iode)g p-n junction diode. V iode Forward Voltage.3 V T J = 25 C, I = 40, V G = 0V i t rr Reverse Recovery Time 70 ns T J = 25 C, I F = 40, V = 75V Q rr Reverse Recovery Charge nc di/dt = 0/μs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2%. 2

3 bsolute Maximum Ratings Parameter Max. Units C = 25 C Power issipation f 25 W C = 0 C Power issipation f 63 = 25 C Power issipation c 3.3 T P Peak oldering Temperature 270 C T J Operating Junction and -55 to 75 torage Temperature Range T TG Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient e 45 R θj Junction-to-mbient j 2.5 R θj Junction-to-mbient k 20 C/W R θj-can Junction-to-Can fl.2 R θj-pcb Junction-to-PCB Mounted 0.5 Thermal Response ( Z thjc ) C/W = INGLE PULE ( THERML REPONE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthjc Tc E-006 E t, Rectangular Pulse uration (sec) τ 4 τ 4 τ C τ e Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Notes: ƒ urface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 90 C. ƒ urface mounted on in. square Cu Mounted on minimum footprint full size board with metalized board (still air). back and with small clip heatsink. (still air) 3

4 C, Capacitance (pf) V G, Gate-to-ource Voltage (V) I, rain-to-ource Current () R (on), rain-to-ource On Resistance (Normalized) I, rain-to-ource Current () I, rain-to-ource Current () IRF7779L2TR/TRPbF 00 0 VG TOP 5V V 8.0V 7.5V 7.0V 6.5V 6.0V BOTTOM 5.5V 00 VG TOP 5V V 8.0V 7.5V 7.0V 6.5V 6.0V BOTTOM 5.5V 0 60μs PULE WITH Tj = 25 C 5.5V 5.5V 0. 0 V, rain-to-ource Voltage (V) Fig 4. Typical Output Characteristics 60μs PULE WITH Tj = 75 C 0. 0 V, rain-to-ource Voltage (V) Fig 5. Typical Output Characteristics 00 0 V = 50V 60μs PULE WITH I = 40 V G = V T J = 75 C T J = 25 C T J = -40 C V G, Gate-to-ource Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V G = 0V, f = MHZ C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd Ciss I = 40 V = 20V V = 75V V = 30V 00 Coss 6 4 Crss V, rain-to-ource Voltage (V) Q G Total Gate Charge (nc) Fig 8. Typical Capacitance vs.rain-to-ource Voltage Fig 9. Typical Total Gate Charge vs Gate-to-ource Voltage 4

5 E, ingle Pulse valanche Energy (mj) I, rain Current () V G (th) Gate threshold Voltage (V) I, rain-to-ource Current () IRF7779L2TR/TRPbF OPERTION IN THI RE LIMITE BY R (on) I, Reverse rain Current () T J = 75 C 0 T J = 25 C T J = -40 C V G = 0V V, ource-to-rain Voltage (V) Fig. Typical ource-rain iode Forward Voltage 0 0. Tc = 25 C Tj = 75 C ingle Pulse C msec msec 0μsec V, rain-toource Voltage (V) Fig. Maximum afe Operating rea I = I =.0m I = 250μ T C, CaseTemperature ( C) Fig 2. Maximum rain Current vs. Case Temperature I TOP BOTTOM 40 T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature tarting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy Vs. rain Current 5

6 E R, valanche Energy (mj) valanche Current () IRF7779L2TR/TRPbF 00 uty Cycle = ingle Pulse 0 llowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 50 C and Tstart =25 C (ingle Pulse) llowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 50 C E-06.0E-05.0E-04.0E-03.0E-02.0E-0 Fig 5. Typical valanche Current Vs.Pulsewidth TOP ingle Pulse BOTTOM % uty Cycle I = tarting T J, Junction Temperature ( C) Fig 6. Maximum valanche Energy Vs. Temperature tav (sec) Notes on Repetitive valanche Curves, Figures 5, 6: (For further info, see N-05 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. afe operation in valanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 9a, 9b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. ΔT = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 5, 6). t av = verage time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E (R) = P (ave) t a -.U.T ƒ - Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I Waveform Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt = P.W. Period V G =V V * R G di/dt controlled by R G river same type as.u.t. I controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I * V G = 5V for Logic Level evices Fig 7. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOFETs 6

7 Id Vds Vgs 0 20K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform V (BR) 5V tp V L RIVER VR G G 20V tp.u.t I 0.0Ω - V I Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms V R V V G.U.T. 90% R G - V VV G Pulse Width µs uty Factor 0. % % V G t d(on) t r t d(off) t f Fig 20a. witching Time Test Circuit Fig 20b. witching Time Waveforms 7

8 irectfet Board Footprint, L8 (Large ize Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations G = GTE = RIN = OURCE G 8

9 irectfet Outline imension, L8 Outline (Largeize Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations COE B C E F G H J K L M N P METRIC IMENION MX IMPERIL ÃMX irectfet Part Marking GTE MRKING LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at 9

10 irectfet Tape & Reel imension (howing component orientation). NOTE: Controlling dimensions in mm td reel quantity is 4000 parts. (ordered as IRF7779L2PBF). COE B C E F G H REEL IMENION TNR OPTION (QTY 4000) METRIC IMPERIL MX MX LOE TPE FEE IRECTION NOTE: CONTROLLING IMENION IN MM COE B C E F G H IMENION METRIC MX NC IMPERIL MX NC

11 Part number Package Type tandard Pack Note Form Quantity IRF7779L2TRPbF irectfet2 Large Can Tape and Reel 4000 "TR" suffix IRF7779L2TRPbF irectfet2 Large Can Tape and Reel 00 "TR" suffix Qualification Information Qualification level Industrial (per JEEC JE47F guidelines) Comments: This family of products has passed JEEC s Industrial qualification. IR s Consumer qualification level is granted by extension of the higher Industrial level. Moisture ensitivity Level FET2 ML RoH Compliant Yes (per JEEC J-T-020 ) Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEEC standard at the time of product release. ata and specifications subject to change without notice. This product has been designed and qualified to ML rating for the Industrial market. dditional storage requirement details for irectfet products can be found in application note N35 on IR s Web site. Qualification tandards can be found on IR s Web site. IR WORL HEQURTER: 233 Kansas t., El egundo, California 90245, U Tel: (3) TC Fax: (3) Visit us at for sales contact information./09