IRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance. 1 PD 91746E SO-8.

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1 P 9746E HEXFET Chip-et for C-C Converters N Channel pplication pecific MOFETs Ideal for Mobile C-C Converters Low Conduction Losses Low witching Losses escription This new device employs advanced HEXFET Power MOFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency C-C Converters that power the latest generation of mobile microprocessors. The offers maximum efficiency for mobile CPU core C-C converters. 3 6 G 4 5 O-8 Top View evice Features V 30V mω R (on) Qg 3nC Qsw.5nC Qoss 36nC bsolute Maximum Ratings Parameter Max. Units V rain-to-ource Voltage 30 V V G Gate-to-ource Voltage ± 2 T = 25 C Continuous rain Current, V 0V e 3 T = 70 C Continuous rain Current, V 0V e 0 I M Pulsed rain Current c 00 = 25 C Power issipation e 2.5 W = 70 C Power issipation e.6 Linear erating Factor 0.02 W/ C T J Operating Junction and -55 to + 50 C T TG torage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 C/W R θj Junction-to-mbient eg /4/07

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV rain-to-ource Breakdown Voltageh 30 V R (on) tatic rain-to-ource On-Resistanceh 9.2 mω V G(th) Gate Threshold Voltage h V I rain-to-ource Leakage Current 70 0 µ 50 I G Gate-to-ource Forward Leakage 00 Gate-to-ource Reverse Leakage -00 n Q g Total Gate Charge h 22 3 Q gs Pre-Vth Gate-to-ource Charge 3.7 Q gs2 Post-Vth Gate-to-ource Charge.4 nc Q gd Gate-to-rain Charge 6.8 Q sw witch Charge (Q gs2 + Q gd ) h Q oss Output Charge h nc R G Gate Resistance Ω t d(on) Turn-On elay Time 6 t r Rise Time 20 t d(off) Turn-Off elay Time 38 ns t f Fall Time 6 iode Characteristics Parameter Min. Typ. Max. Units I Continuous ource Current 2.5 (Body iode)c I M Pulsed ource Current 06 (Body iode) V iode Forward Voltage h.2 V Q rr Reverse Recovery Charge f 88 ns Q rr(s) Reverse Recovery Charge 55 (with Parallel chottky) f nc Conditions V G = 0V, I = 250µ V G = 4.5V, I = 7.0 d V = V G, I = 250µ V = 30V, V G = 0V V = 24V, V G = 0V V = 24V, V G = 0V, T J = 00 C V G = 2V V G = -2V V G = 5.0V V = 6V I = 7.0 V = 6V, V G = 0V V = 6V, V G = 4.5V e I = 7.0 R G = 2Ω Resistive Load Conditions MOFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I = 7.0, V G = 0V di/dt = 700/µs V = 6V, V G = 0V, I = 7.0 di/dt = 700/µs (with 0BQ040) V = 6V, V G = 0V, I = 7.0 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 µs; duty cycle 2%. ƒ When mounted on inch square copper board, t < 0 sec. Typ = measured - Q oss R θ is measured at T J of approximately 90 C. evices are 00% tested to these parameters. 2

3 Typical Characteristics Fig. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-ource Voltage 0 I, Reverse rain Current () T J = 50 C T J = 25 C Fig 3. Typical Rds(on) vs. Gate-to-ource Voltage V G = 0 V V,ource-to-rain Voltage (V) Fig 4. Typical ource-rain iode Forward Voltage 00 Thermal Response (Z thj ) 0 = INGLE PULE (THERML REPONE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T PM t, Rectangular Pulse uration (sec) Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-mbient t t2

4 O-8 Package etails imensions are shown in milimeters (inches) E B H 0.25 [.00] X e IM INCHE MILLIMETER MIN MX MIN MX b c E e e H K L y B IC.27 B IC.025 B IC BIC e C y K x 45 8X b 0.25 [.00] C B O-8 Part Marking 0.0 [.004] NOT E :. IMENIONING & TOLERNCING PER ME Y4.5M CONTROLLING IMENION: MILLIMETER 3. IMENION RE HOWN IN MILLIMETER [INCHE]. 4. OUTLINE CONFORM TO JEEC OUTLINE M IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.5 [.006]. 6 IMENION OE NOT INCLUE MOL PROTRUION. MOL PROTRUION NOT TO EXCEE 0.25 [.00]. 7 IMENION I THE LENGTH OF LE FOR OLERING TO UBTRTE. 8X L 8X c [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THI I N IRF70 (MOFET) INTERNTIONL RECTIFIER LOGO XXXX F70 TE COE (YWW) P = E IGNT E LE-FREE PROUCT (OPTIONL) Y = LT IGIT OF THE YER WW = WEEK = EMBLY ITE COE LOT COE PRT NUMBER 4

5 O-8 Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTE:. CONTROLLING IMENION : MILLIMETER. 2. LL IMENION RE HOWN IN MILLIMETER(INCHE). 3. OUTLINE CONFORM TO EI-48 & EI (2.992) MX. NOTE :. CONTROLLING IMENION : MILLIMETER. 2. OUTLINE CONFORM TO EI-48 & EI (.566 ) 2.40 (.488 ) IR WORL HEQURTER: 233 Kansas t., El egundo, California 90245, U Tel: (30) TC Fax: (30) Visit us at for sales contact information.2/