Ultrafast, Soft Recovery Diode. Base Cathode Anode N/C
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1 HEXFRED TM Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count N/C Base Cathode 3 node V R = 600V V F (typ.)* =.3V I F(V) = 5 Q rr (typ.)= nc I RRM = 0 t rr (typ.) = 3ns di (rec)m /dt (typ.) = 50/µs Description International Rectifier's is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 volts and 5 amps continuous current, the is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM ) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. D Pak bsolute Maximum Ratings Parameter Max. Units V R Cathode-to-node Voltage 600 V I T C = 00 C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 00 P T C = 5 C Maximum Power Dissipation 5 P T C = 00 C Maximum Power Dissipation 50 W T Operating unction and T STG Storage Temperature Range -55 to +50 C * 5 C
2 Electrical T = 5 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V BR Cathode node Breakdown Voltage 600 V I R = 00µ.3.7 I F = 5 V FM Max Forward Voltage.5.0 V I F = 50 See Fig..3.7 I F = 5, T = 5 C I RM Max Reverse Leakage Current.5 0 V R = V R Rated See Fig. µ T = 5 C, V R = 0.8 x V R Rated D Rated C T unction Capacitance pf V R = 00V See Fig. 3 L S Series Inductance 8.0 nh Measured lead to lead 5mm from package body Dynamic Recovery T = 5 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions t rr Reverse Recovery Time 3 I F =.0, di f/dt = 00/µs, V R = 30V t rr See Fig ns T = 5 C t rr T = 5 C I F = 5 I RRM Peak Recovery Current T = 5 C I RRM See Fig T = 5 C V R = 00V Q rr Reverse Recovery Charge 375 T = 5 C nc Q rr See Fig T = 5 C di f /dt = 00/µs di (rec)m/dt Peak Rate of Fall of Recovery Current 50 T = 5 C /µs di (rec)m /dt During t b See Fig T = 5 C Thermal - Mechanical Characteristics Parameter Min. Typ. Max. Units T lead Lead Temperature 300 C R thc Thermal Resistance, unction to Case.0 R th Thermal Resistance, unction to mbient 80 K/W Wt Weight.0 g 0.07 (oz) in. from Case (.6mm) for 0 sec Typical Socket Mount
3 Instantaneous Forward Current - I F () Forward Voltage Drop - V FM (V) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 0 T = 50 C T = 5 C T = 5 C Reverse Current - I R (µ) unction Capacitance -C T (pf) T = 5 C Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T = 50 C T = 5 C T = 5 C Reverse Voltage - V R(V) Fig. 3 - Typical unction Capacitance vs. Reverse Voltage Thermal Response (Z thc ) 0. D = SINGLE PULSE Notes: (THERML RESPONSE). Duty factor D = t / t 0.0. Peak T = P DM x Z thc + TC t, Rectangular Pulse Duration (sec) PDM Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics t t 3
4 40 0 V R = 00V T = 5 C T = 5 C 30 5 V R= 00V T = 5 C T = 5 C 00 0 I F = 50 I F = 5 trr (nc) 80 I F = 50 I F = 5 Irr ( ) 5 I F = 0 60 I F = di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery vs. di f /dt di f/dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt V R = 00V T = 5 C T = 5 C 0000 V R = 00V T = 5 C T = 5 C 000 I F = 50 Qrr (nc) I F = 5 I F = 0 di (rec) M/dt ( /µs) 000 I F = 50 I F = 5 I F = di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4
5 REVERSE RECOVERY CIRCUIT dif/dt DUST L = 70µH G V R = 00V 0.0 Ω Fig. 9 - Reverse Recovery Parameter Test Circuit D S IRFP50 D.U.T. 0 I F di /dt f. di f/dt - Rate of change of current through zero crossing. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current t a 3 trr I RRM 4. Q rr - rea under curve defined by t rr and I RRM t rr X I RRM Q rr = 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. 0 - Reverse Recovery Waveform and Definitions t b 4 Q rr 0.5 I RRM di(rec)m/dt I RRM 5
6 Outline Table 5.49 (0.6) 4.73 (0.58) (0.055) 3X.4 (0.045) 0.6 (0.40) REF..6 (0.0).3 (0.09) 8.89 (0.35) REF (0.37) X 0.69 (0.7) 6.47 (0.5) 6.8 (0.4) 4.69 (0.8) 4.0 (0.6).3 (0.05). (0.05) 5.8 (0.) 4.78 (0.9) 0.55 (0.0) 0.46 (0.0) MINIMUM RECOMMENDED FOOTPRINT.43 (0.45) (0.8) 4.3 (0.7) 0.6 (0.0) MX (0.35) 7.78 (0.70) 5.08 (0.0) REF. 3.8 (0.5).08 (0.08) X Conforms to EDEC Outline D PK Dimensions in millimeters and inches.54 (0.0) X Part Marking Information EXMPLE: THIS IS N INTERNTIONL RECTIFIER LOGO (K) PRT NUMBER 5K3 97 SSEMBLY LOT CODE (N/C) () DTE CODE (YYWW) YY = YER WW = WEEK 6
7 Tape & Reel Information TRR FEED DIRECTION TRL.60 (0.063).50 (0.059) 4.0 (0.6) 3.90 (0.53).85 (0.073).65 (0.065).60 (0.063) DI..50 (0.059).60 (0.457).40 (0.449) 5.4 (0.609) 5. (0.60) (0.045) 0.34 (0.035) 4.30 (0.957) 3.90 (0.94).75 (0.069) DI (0.49).5 (0.049) 0.70 (0.4) 6.0 (0.634) 5.90 (0.66) 4.7 (0.86) 4.5 (0.78) FEED DIRECTION 3.50 (0.53).80 (0.504) DI (.039) 4.40 (0.96) 360 (4.73) DI. MX. 60 (.36) DI. MIN. SMD-0 Tape & Reel When ordering, indicate the part number, part orientation, and the quantity. Quantities are in multiples of 800 pieces per reel for both TRL and TRR. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 9045, US Tel: (30) TC Fax: (30) Visit us at for sales contact information. /03 7
TO-220AC. 1
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PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
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More information=25 C Avalanche Energy, single pulse 65 I C. C Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)
PD- 94117 IRGP2B12U-E INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT UltraFast Non Punch Through (NPT) Technology 1 µs Short Circuit capability Square RBSOA Positive V CE (on) Temperature Coefficient
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V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature
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PD- 93817 IRGP2B12UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast Non Punch Through (NPT) Technology Low Diode V F (1.67V Typical @ 2A
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VS-8ETU04S-M3, VS-8ETU04-1-M3 Ultrafast Rectifier, 8 FRED Pt 1 3 D PK (TO-63) ase cathode 1 3 N/C node VS-8ETU04S-M3 1 3 PRIMRY CHRCTERISTICS TO-6 N/C 1 3 node I F(V) 8 V R 400 V V F at I F 0.94 V t rr
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Hyperfast Rectifier, x 5 FRED Pt VS-30CTH0SPbF ase Common Cathode Common Cathode 3 node node D PK PRODUCT SUMMRY t rr (maximum) I F(V) V R VS-30CTH0-PbF ase Common Cathode Common Cathode 3 node node TO-6
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Ultrafast Rectifier, 8 FRED Pt TO-63 (D PK) ase cathode 1 3 N/C node VS-8ETU04SHM3 PRODUCT SUMMRY N/C TO-6 1 3 node Package TO-63 (D PK), TO-6 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max.
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
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VS-30CTH0S-M3, VS-30CTH0--M3 Hyperfast Rectifier, 30 FRED Pt 3 D PK (TO-63) ase Common Cathode Common Cathode 3 node node VS-30CTH0S-M3 3 PRIMRY CHRCTERISTICS TO-6 ase Common Cathode Common Cathode 3 node
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P 9746E HEXFET Chip-et for C-C Converters N Channel pplication pecific MOFETs Ideal for Mobile C-C Converters Low Conduction Losses Low witching Losses 2 8 7 escription This new device employs advanced
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DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
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