CID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier

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1 CID566 Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier Features Package CES = 6 = 5 A, T C = C T sc > µs, =5 C CE(on) Typ. =.8 Zero Reverse Recovery Diode Greatly Reduced Switching Loss Low CE (on) Non Punch Through IGBT -µs Short Circuit Capability Square RBSOA Positive CE (on) Temperature Coefficient Conforms to Current EU RoHS Directive Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Extremely Low EMI Excellent Current Sharing In Parallel Operation Applications Motor Drives - Typical Power: 2HP-3HP TO Part Number Package Marking CID566B TO-22-3 CID566 Maximum Ratings Symbol Parameter alue Unit Test Conditions Fig. CES Collector-to-Emitter oltage 6 Continuous Collector Current 3 5 A T C =25 C T C = C M Pulsed Collector Current 62 A I LM Clamped Inductive Load Current 62 A I F Diode Continuous Forward Current 9 3 A T C =25 C T C = C I FSM Non-Repetitive Peak Forward Surge Current 2 A T C =25 C t P = µs, pulse Datasheet: CID566 Rev. A Gate-to-Emitter oltage ±2 P tot Power Dissipation W T C =25 C T C = C, T stg Operating Junction and Storage Temperature -55 to +5 C Subject to change without notice.

2 Electrical =25 C (unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Fig. (BR)CES Collector-to-Emitter Breakdown oltage 6 =, =5 µa (BR)CES / Temperature Coeff. of Breakdown oltage.3 / C CE(on) Collector-to-Emitter Saturation oltage =, =. ma, (25 C- 5 C) = 5 A, =5 = 5 A, =5 = 25 C = 5 A, =5 = 5 C (th) Gate Threshold oltage CE =, = 25 µa (th) / Temperature Coeff. of Threshold oltage - m/ C =, I =. ma, (25 C- CE GE C 5 C) 5,6,7, 2, 2,3 g fe Forward Transconductance.6 S CE = 5,, = 2 A, PW=8 µs ES Zero Gate oltage Collector Current µa =, CE = 6 =, CE = 6, = 5 C FM Diode Forward oltage Drop = 5 A = 5 A, = 5 C 8 I GES Gate-to-Emitter Leakage Current ± na = ±2 Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Fig. R θjc Thermal Resistance from Junction to Case-IGBT.6 C/W R θjc Thermal Resistance from Junction to Case-Diode.8 C/W R θcs Case-to-Sink, Flat, Greased Surface.5 C/W R θja Junction-to-Ambient, Typical Socket Mount 62 C/W R θja Junction-to-Ambient (PCB Mount, Steady State) 4 C/W Wt Weight.44 g Switching =25 C (unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Fig. Q g Total Gate Charge (Turn-On) nc Q ge Gate - Emitter Charge (Turn-On) 7. nc Q gc Gate - Collector Charge (Turn-On) nc E on Turn-On Switching Loss 85 µj E off Turn-Off Switching Loss 42 µj E tot Total Switching Loss 55 µj = 5 A cc = 4 = 5 = 5 A, CC =4 = 5, R G = 22 Ω L = 2 µh, Ls = 5 nh = 25 C CT CT4 CID566 Rev. A

3 Switching = 25 C (unless otherwise specified) continued... Symbol Parameter Typ. Max. Unit Test Conditions Fig. t d(on) Turn-On Delay Time 34 ns t r Rise Time 22 ns t d(off) Turn-Off Delay Time 6 ns t f Fall Time 22 ns E on Turn-On Switching Loss 9 µj E off Turn-Off Switching Loss 57 µj E tot Total Switching Loss 66 µj = 5 A, CC =4 = 5, R G = 22 Ω L = 2 µh, Ls = 5 nh = 25 C = 5 A, CC =4 = 5, R G = 22 Ω L = 2 µh, Ls = 5 nh = 5 C CT4 CT4 4,6 WF WF2 t d(on) Turn-On Delay Time 34 ns t r Rise Time 28 ns t d(off) Turn-Off Delay Time 65 ns t f Fall Time 232 ns = 5 A, CC =4 = 5, R G = 22 Ω L = 2 µh, Ls = 5 nh = 5 C CT4 5,7 WF WF2 C ies Input Capacitance 85 pf C oes Output Capacitance 75 pf C res Reverse Transfer Capacitance 35 pf RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area µs E rec Reverse Recovery Energy of the Diode 2 µj t rr Diode Reverse Recovery Time 3 ns I rr Diode Peak Reverse Recovery Current A = CC =3 f =. MHz = 5 C, = 62 A, p = 6 CC = 5, = +5 to R G = 22 Ω = 5 C, p = 6, RG = 22 Ω CC = 36, = +5 to = 5 C I F = 5 A, CC =4 = 5, R G = 22 Ω L = 2 µh, Ls = 5 nh 4 CT2 CT3 WF4 CT4 WF3 CID566 Rev. A

4 (A) A) (A) P tot (W) PRELIMINARY Typical Performance T C ( C) T C ( C) Fig. - Maximum DC Collector Current Fig. - Maximum vs. Case DC Temperature Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Fig. 2 - Power Dissipation Temperaturevs. Case Temperature µs DC µs ms. Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA Fig. T C 3 =25 C; - Forward SOA 5 C Fig. 4 - =5 C; Reverse Bias =5 SOA T C = 25 C; 5 C = 5 C; =5 3 CID566 Rev. A

5 E (A) I F (A) E (A) E (A) PRELIMINARY Typical Performance = 8 GE = 5 GE = 2 GE = GE = Fig. 5 - Typ. IGBT Output Characteristics Fig. 5 - Typ. =-4 C; IGBT Output tp=3 Characteristics μs = -4 C; tp = 3µs = 8 GE = 5 GE = 2 GE = GE = Fig. 6 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT =25 C; Output tp=3 Characteristics μs 2 = 25 C; tp = 3µs = 8 GE = 5 GE = 2 GE = GE = C 25 C 5 C 75 C 25 C 75 C F () Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics Fig. 7 - Typ. TIGB =5 C; Output tp=3 Characteristics μs Fig. 8 - Typ. Diode Forward Characteristics = 5 C; tp = 3µs tp = 8µs CID566 Rev. A

6 E (A) CE () PRELIMINARY Typical Performance 7 IF(AG) Forward Current (A) Tc Case Temperature ( C) Fig. 9 - Diode Current Derating E = 5.A E = 5A E = 3A 2 8 E = 5.A E = 5A E = 3A () () Fig. - Typical Fig. 9 - Typical CE vs. CE vs. Fig. - Typical GE Fig. - Typical CE vs. CE vs. T GE = J =-4 C T -4 C = 25 C J =25 C E = 5.A E = 5A E = 3A = 25 C = 5 C = 5 C = 25 C () () Fig. 2 - Typical CE vs. Fig. 3 - Typ. Transfer Characteristics Fig.2 - Typical =5 C CE vs. Fig Typ. CE Transfer =5; tp= Characteristics μs = 5 C CE = 5; tp = µs CID566 Rev. A

7 Swiching Time (ns) Swiching Time (ns) PRELIMINARY Typical Performance E OFF 6 td OFF 4 Energy (uj) 2 8 E ON 6 td ON 4 t F Ic (A) t R (A) Fig. 4 - Typ. Energy Loss vs. = 5 C; L=2 µh; CE= 4 RG= 22 Ω; GE= 5 Fig Typ. Switching Time vs. vs. J = 5 C; L=2µH; µh; CE= = 4 RRG= G = 22 ; Ω; GE= = E OFF td OFF 7 Energy (uj) E ON td ON t R 2 t F Rg (Ohms) 5 5 R G ( ) Fig. 6 - Typ. Energy Loss vs. R G = 5 C; L=2 µh; CE= 4 E= 5 A; = 5 Fig. Fig. 6-7 Typ. - Typ. Switching Time Time vs. vs. R G R G T= J = 5 C; 5 C; L=2µH; µh; CE= = 6 E I= CE= 5A; A; GE = 5 GE= 5 CID566 Rev. A

8 Thermal Response ( Z thjc ) Capacitance (pf) () PRELIMINARY Typical Performance 6 Cies Coes 4 Cres Q G, Total Gate Charge (nc) Fig. 22- Fig. Typ. 8 - Capacitance Typ. Capacitance vs. vs. CE CE Fig. Fig.9 23 Fig. - Typical 9 - Typ. Gate Gate Charge Charge vs. vs. = ; GE = ; f= MHz I f = MHz E = 5A; CE =5 A; L= 6 μh L = 6µH 8 D = SINGLE PULSE ( THERMAL RESPONSE ) J J Ci= i Ri Ci i Ri R R 2 R 3 R R 2 R 3 C Ri ( C/W) i (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E-5 E-4 E-3 E-2 E- E+ t, Rectangular Pulse Duration (sec) Fig. 2 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) CID566 Rev. A

9 Typical Performance L K DUT L CC Rg DUT 48 Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver diode clamp / DUT L DC DUT 36-5 Rg DUT / DRIER CC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = CC ICM Rg DUT CC Fig.C.T.5 - Resistive Load Circuit CID566 Rev. A

10 IRGB/S/SL5B6KDPbF t F t F 25 4 t R 24 CE () % 9 I% E CE 5 % % I I C E CE 2 5 ICE (A) CE () 3 2 9% I 9% test CE current test current 53 2 ICE (A) 5 % 5% C E CE 5 % t R E % test current 5% CE CE 5 E o ff L o s s E off Loss t (µs ) WF.- Typ. Turn-off = 5 C using CT.4 - E on Eon Loss Loss t (µs) WF.2- Typ. Turn-on = 5 C using Fig. CT Q R R C E 2-3 t R R CE () Pe a k I R R Peak I Peak RR I RR % Pe ak I R R ICE (A) CE () 2 E 5 ICE (A) -4-3 t RR t (µ S ) t (µs ) WF.3- Typ. Reverse = 5 C using CT.4 WF.4- Typ. Short = 5 C using CT.3 CID566 Rev. A

11 Package Dimensions PACKAGE TO-22-3 M N E K A J Inches Millimeters POS Min Max Min Max A B C D D Q E F. TYP 2.54 TYP G.2 BSC 5.8 BSC J K S R L M P B C N P Q R F G L S CID566 Rev. A

12 Recommended Solder Pad Layout TO-22-3 Part Number Package Marking CID566B TO-22-3 CID566 The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 22/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 2, 26. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 26 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: CID566 Rev. A

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