IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

Transcription

1 SMPS IGBT PD IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead- Free Features NPT Technology, Positive Temperature Coefficient Lower V CE (SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to khz G C E n-channel V CES = 6V V CE(on) typ. = V GE = V I C = 33A Equivalent MOSFET Parameters R CE(on) typ. = 6mΩ I D (FET equivalent) = A TO-247AC G C E Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 2 C Continuous Collector Current 7 I T C = C Continuous Collector Current 42 I CM Pulse Collector Current (Ref. Fig. C.T.4) I LM Clamped Inductive Load Current d A I T C = 2 C Diode Continous Forward Current I T C = C Diode Continous Forward Current 2 I FRM Maximum Repetitive Forward Current e V GE Gate-to-Emitter Voltage ±2 V P T C = 2 C Maximum Power Dissipation 37 W P T C = C Maximum Power Dissipation T J Operating Junction and - to + T STG Storage Temperature Range C Soldering Temperature for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).34 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).64 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface). R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 Weight 6. (.2) g (oz) 2//4

2 IRGPB6PDPbF Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = µa V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.6 V/ C V GE = V, I C = ma (2 C-2 C) R G Internal Gate Resistance.2 Ω MHz, Open Collector I C = 33A, V GE = V 4,,6,8,9 V CE(on) Collector-to-Emitter Saturation Voltage V I C = A, V GE = V I C = 33A, V GE = V, I C = A, V GE = V, V GE(th) Gate Threshold Voltage V I C = 2µA 7,8,9 V GE(th) / TJ Threshold Voltage temp. coefficient -7.7 mv/ C V CE = V GE, I C =.ma gfe Forward Transconductance 42 S V CE = V, I C = 33A, PW = 8µs I CES Collector-to-Emitter Leakage Current. µa V GE = V, V CE = 6V. ma V GE = V, V CE = 6V,.3.7 I F = 2A, V GE = V V FM Diode Forward Voltage Drop. 2. V I F = A, V GE = V.3.7 I F = 2A, V GE = V, I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V, V CE = V Switching (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) I C = 33A 7 Q gc Gate-to-Collector Charge (turn-on) 4 82 nc V CC = 4V CT Q ge Gate-to-Emitter Charge (turn-on) 84 3 V GE = V E on Turn-On Switching Loss 36 9 I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss µj V GE = +V, R G = 3.3Ω, L = 2µH E total Total Switching Loss TJ = 2 C f t d(on) Turn-On delay time I C = 33A, V CC = 39V CT3 t r Rise time ns V GE = +V, R G = 3.3Ω, L = 2µH t d(off) Turn-Off delay time 3 4 f t f Fall time 43 6 E on Turn-On Switching Loss 6 88 I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss 46 3 µj V GE = +V, R G = 3.3Ω, L = 2µH,3 E total Total Switching Loss 7 4 f WF,WF2 t d(on) Turn-On delay time I C = 33A, V CC = 39V CT3 t r Rise time ns V GE = +V, R G = 3.3Ω, L = 2µH 2,4 t d(off) Turn-Off delay time 4 6 f WF,WF2 t f Fall time 6 C ies Input Capacitance 47 V GE = V 6 C oes Output Capacitance 39 V CC = 3V C res Reverse Transfer Capacitance 8 pf f = Mhz C oes eff. Effective Output Capacitance (Time Related) g 28 V GE = V, V CE = V to 48V C oes eff. (ER) Effective Output Capacitance (Energy Related) g 9 T J = C, I C = A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 22Ω, V GE = +V to V t rr Diode Reverse Recovery Time 7 ns I F = 2A, V R = 2V, 9 6 di/dt = 2A/µs Q rr Diode Reverse Recovery Charge 2 37 nc I F = 2A, V R = 2V, di/dt = 2A/µs I rr Peak Reverse Recovery Current 4. A I F = 2A, V R = 2V, 9,2,2,22 Notes: 8. di/dt = 2A/µs CT R CE(on) typ. = equivalent on-resistance = V CE(on) typ./ I C, where V CE(on) typ.= 2.V and I C =33A. I D (FET Equivalent) is the equivalent MOSFET I D 2 C for applications up to khz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V CC = 8% (V CES ), V GE = 2V, L = 28 µh, R G = 22 Ω. ƒ Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 3ETH6. C oes eff. is a fixed capacitance that gives the same charging time as C oes while V CE is rising from to 8% V CES. C oes eff.(er) is a fixed capacitance that stores the same energy as C oes while V CE is rising from to 8% V CES. 2

3 I CE (A) I CE (A) I C A) I CE (A) I C, Collector Current (A) P tot (W) IRGPB6PDPbF 8 7 Limited by package T C, Case Temperature ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature V GE = V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. 3 - Reverse Bias SOA T J = C; V GE =V Fig. 4 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8µs V GE = V VGE = 2V VGE = V VGE = 8.V VGE = 6.V V GE = V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics ; tp = 8µs ; tp = 8µs 3

4 Swiching Time (ns) I CE (A) IRGPB6PDPbF I CE = A I CE = 33A I CE = A 2 V GE (V) Fig. 7 - Typ. Transfer Characteristics V CE = V; tp = µs 2 V GE (V) Fig. 8 - Typical V CE vs. V GE 2 2 I CE = A I CE = 33A I CE = A Instantaneous Forward Current - IF (A) T J = C T J = 2 C T = 2 C J 2 V GE (V) Fig. 9 - Typical V CE vs. V GE A Forward Voltage Drop - V FM (V) Fig. - Maximum. Diode Forward Characteristics tp = 8µs E ON Energy (µj) 2 td OFF E OFF 8 t F 6 td ON 4 t R I C (A) I C (A) Fig. - Typ. Energy Loss vs. I C Fig. 2 - Typ. Switching Time vs. I C ; L = 2µH; V CE = 39V, R G = 3.3Ω; V GE = V. ; L = 2µH; V CE = 39V, R G = 3.3Ω; V GE = V. Diode clamp used: 3ETH6 (See C.T.3) Diode clamp used: 3ETH6 (See C.T.3) 4

5 V GE, Gate-to-Emitter Voltage (V) E oes (µj) Capacitance (pf) Energy (µj) Swiching Time (ns) IRGPB6PDPbF 8 6 E OFF 4 td OFF 2 8 t F 6 E ON td ON 4 t R R G (Ω) R G (Ω) Fig. 3 - Typ. Energy Loss vs. R G ; L = 2µH; V CE = 39V, I CE = 33A; V GE = V Diode clamp used: 3ETH6 (See C.T.3) 3 3 Fig. 4 - Typ. Switching Time vs. R G ; L = 2µH; V CE = 39V, I CE = 33A; V GE = V Diode clamp used: 3ETH6 (See C.T.3) Cies 2 2 Coes Cres Voltage (V) Fig. - Typ. Output Capacitance Stored Energy vs. V CE Fig. 6- Typ. Capacitance vs. V CE V GE = V; f = MHz 6. 4 V CE = 48V Normalized V CE(on) Q G, Total Gate Charge (nc) T C ( C) Fig. 7 - Typical Gate Charge vs. V GE Fig. 8 - Normalized Typ. V CE(on) I CE = 33A vs. Junction Temperature I C = 33A, V GE = V

6 IRGPB6PDPbF 4 2 V R = 2V 3 2 V R= 2V 2 I F = A I F = 2A trr- (nc) 8 I F = A I F = 2A Irr- ( A) I F = A 6 I F = A 4 2 di f /dt - (A/µs) Fig. 9 - Typical Reverse Recovery vs. di f /dt A di f/dt - (A/µs) Fig. 2 - Typical Recovery Current vs. di f /dt A 4 2 V R = 2V V R = 2V I F = A Qrr- (nc) 8 6 I F = 2A I F = A di (rec) M/dt- (A /µs) I F = A I F = 2A I F = A 4 2 di f /dt - (A/µs) Fig. 2 - Typical Stored Charge vs. di f /dt A di f /dt - (A/µs) Fig Typical di (rec)m /dt vs. di f /dt, A 6

7 I D, Drain-to-Source Current (A) IRGPB6PDPbF Thermal Response ( Z thjc ) D = R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 τ C τ Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/ri Ci= i/ri E-6 E-.... t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thjc ).... D = SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci= i/ri E-6 E-.... t, Rectangular Pulse Duration (sec) Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) τ C τ OPERATION IN THIS AREA LIMITED BY V CE (on) msec µsec msec msec.. Tc = 2 C Tj = C Single Pulse V DS, Drain-to-Source Voltage (V) Fig. 2 - Forward SOA, T C = 2 C; T J C 7

8 IRGPB6PDPbF L K DUT L VCC 8 V Rg DUT 48V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R = VCC ICM Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT V R = 2V. Ω dif/dt ADJUST L = 7µH G D IRFP2 D.U.T. S Fig. C.T. - Reverse Recovery Parameter Test Circuit 8

9 IRGPB6PDPbF % Ice tf Vce Vce tr Ice 9% Ice Vce (V) 3 2 % Vce Ice % Ice Ice (A) Vce (V) 3 2 % Ice % Vce 3 2 Ice (A) Eoff Loss Time (us) Fig. WF - Typ. Turn-off Loss using Fig. CT.3 - Eon Loss Time (us) Fig. WF2 - Typ. Turn-on Loss using Fig. CT.3-3 I F t a trr t b Q rr 4 2 I RRM. I RRM di(rec)m/dt.7 I RRM di /dt f. di f/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.7 I RRM and. I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr = 2. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. WF3 - Reverse Recovery Waveform and Definitions 9

10 IRGPB6PDPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WIT H AS S EMBLY LOT CODE 67 ASSEMBLED ON WW 3, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S EMBL Y LOT CODE IRFPE3 3H 6 7 PART NUMBER DATE CODE YEAR = 2 WEEK 3 LINE H TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 924, USA Tel: (3) 22-7 TAC Fax: (3) Visit us at for sales contact information. 2/4

11 Note: For the most current drawings please refer to the IR website at: