V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
|
|
- Iris Welch
- 6 years ago
- Views:
Transcription
1 pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized valanche Voltage and Current l 20V V GS Max. Gate Rating l 0% tested for Rg l Lead-Free 8 S S S G HEXFET Power MOSFET V SS R S(on) max Qg 30V 3.3m:@V GS = V 30nC Top View SO-8 P B bsolute Maximum Ratings V S V GS T = 25 C T = 70 C I M = 25 C = 70 C T J T STG Parameter rain-to-source Voltage Gate-to-Source Voltage Continuous rain Current, V V Continuous rain Current, V V Pulsed rain Current c Power issipation Power issipation Linear erating Factor Operating Junction and Storage Temperature Range Max. 30 ± to 50 Units V W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 R θj Junction-to-mbient f C/W 50 Notes through are on page /04/09
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient V/ C gfs Forward Transconductance 87 S V S = 5V, I = 6 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 7.5 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 3. V GS = 4.5V nc Q gd Gate-to-rain Charge 9.8 I = 6 Q godr Gate Charge Overdrive 9.6 See Figs. 5 & 6 Q sw Switch Charge (Q gs2 Q gd ) 2.9 Q oss Output Charge 8 nc V S = 6V, V GS = 0V R g Gate Resistance.0.6 Ω t d(on) Turn-On elay Time 6 V = 5V, V GS = 4.5V t r Rise Time 9 I = 6 ns t d(off) Turn-Off elay Time 8 R G =.8Ω t f Fall Time See Fig. 8 C iss Input Capacitance 4090 V GS = 0V C oss Output Capacitance 8 pf V S = 5V C rss Reverse Transfer Capacitance 390 =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 350 mj I R valanche Current c 6 iode Characteristics Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = V, I = 20 e mω V GS = 4.5V, I = 6 e V GS(th) Gate Threshold Voltage V V S = V GS, I = 0µ V GS(th) Gate Threshold Voltage Coefficient -5.4 mv/ C V S = V GS, I = 250µ I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 3. I SM (Body iode) showing the G Pulsed Source Current integral reverse 70 S (Body iode)c p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 6, V GS = 0V e t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = 6, V = 5V Q rr Reverse Recovery Charge nc di/dt = 430/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) 2
3 I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () µs PULSE WITH Tj = 25 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V µs PULSE WITH Tj = 50 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V V 2.3V V S, rain-to-source Voltage (V) 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 00 0 V S = 5V 60µs PULSE WITH.6.4 I = 2 V GS = V.2 T J = 50 C T J = 25 C V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3
4 I S, Reverse rain Current () I, rain-to-source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 0000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 6 V S = 24V V S = 5V 000 C iss C oss 2.0 C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERTION IN THIS RE LIMITE BY R S (on) 0 0 msec 0µsec T J = 50 C T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) T = 25 C msec Tj = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 I, rain Current () V GS(th), Gate Threshold Voltage (V) I = 250µ T, mbient Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. mbient Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W 0 0. = SINGLE PULSE ( THERML RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R 4 R 4 τ 4 τ 4 τ τ Ri ( C/W) τi (sec) Notes:. uty factor = t / t Peak T J= P M x Z thj T E-006 E t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 R S(on), rain-to -Source On Resistance (m Ω) E S, Single Pulse valanche Energy (mj) 2 I = I TOP.0.4 BOTTOM T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current V (BR)SS V S R G 20V tp L.U.T IS 0.0Ω 5V RIVER - V I S tp 0 20K K UT L VCC Fig 4. Unclamped Inductive Test Circuit and Waveform Id Fig 5. Gate Charge Test Circuit Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 6. Gate Charge Waveform 6
7 -.U.T - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 7. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V S R V S 90% V GS.U.T. R G - V V GS Pulse Width µs uty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 7
8 SO-8 Package Outline(Mosfet & Fetky) imensions are shown in milimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ H.[ & \ ;E >@ ;/ ;F >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,265(62:,,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ )22735,7 ;>@ SO-8 Part Marking Information ;>@ ;>@ (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 ',6*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing please refer to IR website at 8
9 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 2.7mH, R G = 25Ω, I S = 6. Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 90 C. Revision History ate Comment 6/4/2009 Maximum Rds(on) at Vgs =V changed from 3.7mΩ to 3.3mΩ. ll other parameters are unchanged. Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.06/
V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More information30V GS = 10V 6.2nC
pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationSMPS MOSFET. V DSS R DS(on) max(mw) I D
P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationSMPS MOSFET. V DSS R DS(on) max(mw) I D
P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain
More informationSMPS MOSFET. V DSS R DS(on) max (mω)
P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead 20 C/W Junction-to-Ambient 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor
PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized
More informationIRLML6346TRPbF HEXFET Power MOSFET
P - 9784A EXFET Power MOSFET V S 3 V V GS Max ± 2 V * R Son) max @V GS = 4.V) 63 m R Son) max @V GS = 2.V) 8 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units
P- 95032 SMPS MOSFET ppications High Frequency C-C Isoated Converters with Synchronous Rectification for Teecom and Industria use High Frequency Buck Converters for Computer Processor Power Lead-Free IRF7457PbF
More informationV DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS
PD - 97A IRF797PbF Appications Dua SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and Set-Top Box V DSS HEXFET Power MOSFET R DS(on) max 3V Q.4m:@V GS = V 9.A
More informationIRF7805. HEXFET Chip-Set for DC-DC Converters. Absolute Maximum Ratings. Thermal Resistance. 1 PD 91746E SO-8.
P 9746E HEXFET Chip-et for C-C Converters N Channel pplication pecific MOFETs Ideal for Mobile C-C Converters Low Conduction Losses Low witching Losses 2 8 7 escription This new device employs advanced
More informationSMPS MOSFET. V DSS R DS(on) max I D
P- 95276 SMPS MOSFET IRF7470PbF ppications High Frequency C-C Converters with Synchronous Rectification Lead-Free HEXFET Power MOSFET V SS R S(on) max I 40V 3mΩ Benefits Utra-Low Gate Impedance Very Low
More informationSMPS MOSFET. V DSS R DS(on) max (mw) I D
SMPS MOSFET P- 9628 Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q] Quaified Lead-Free escription Specificay
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units
l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from
More informationSi4410DYPbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω
N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive Lead-Free escription This N-channe HEXFET Power MOSFET is produced using Internationa Rectifier's advanced HEXFET power MOSFET
More informationV DSS. 30V Q1 GS = 10V 6.4A Q2 GS = 10V 9.7A
PD 9794A IRF7902PbF Appications Dua SO8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and SetTop Box V DSS HEXFET Power MOSFET R DS(on) max 30V Q 22.6m:@V GS =
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max. Units
l davanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching l LeadFree escription Fourth Generation HEXFETs from
More informationPD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1
l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationSi4435DYPbF HEXFET Power MOSFET
P- 9533 Si4435YPbF HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Lead-Free S S S G 2 3 8 7 6 4 5 V SS = -30V R S(on) = 0.020Ω escription These P-channe HEXFET
More informationSymbol Parameter Max. 100 P = 25 C Power Dissipation V GS Gate-to-Source Voltage ± 12. V/ns T J C T STG
Low On-Resistance Low Gate Charge N-Channe MOSFET Idea for mobie processor C-C converters Surface Mount 00% R G Tested escription This advanced technoogy HEXFET Power MOSFET achieves an unprecedented baance
More informationIRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
More informationA I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationMOSFET IRF7855 (KRF7855)
M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) 8.5.5 G 2 7 3 4 5.2 +.4 -.2 ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 958 IRF734PbF Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = -20V R S(on) = 0.058Ω
More informationIRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω
P- 93758 IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount vaiabe in Tape & Ree 2.5V Rated G 2 6 5 3 4 S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs from
More informationIRF7322D1 FETKY ä MOSFET / Schottky Diode
P- 9705B IRF7322 FETKY ä MOSFET / Schottky iode Co-packaged HEXFET Power MOSFET and Schottky iode Idea For Buck Reguator ppications P-Channe HEXFET Low V F Schottky Rectifier Generation 5 Technoogy SO-8
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units
V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits
More informationSi4410DY. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω. N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive
P - 91853C Si44Y HEXFET Power MOSFET N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive S S S G 1 8 2 7 3 6 4 5 V SS = 30V R S(on) = 0.0135Ω escription This N-channe HEXFET
More informationProduct Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVSS RSON (MX.) I 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
More informationIRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω
P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More informationIRF7779L2TRPbF IRF7779L2TR1PbF
l RoH Compliant, Halogen Free l Lead-Free (Qualified up to 260 C Reflow) l Ideal for High Performance Isolated Converter Primary witch ocket l Optimized for ynchronous Rectification l Low Conduction Losses
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)
More informationIRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings
HEXFET Power MOFET PRELIMINRY P - 9.245B IRF7403 l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l
More informationIRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.
PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
More informationP-CHANNEL MOSFET. Top View
Generation Technology Ultra Low On-Resistance ual N and P Channel MOSFET ery Small SOC Package Low Profile (
More informationIRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS
P 964 dvanced Process Technoogy Utra Low On-Resistance N Channe MOFET urface Mount vaiabe in Tape & Ree 50 C Operating Temperature utomotive [Q0] Quaified Lead-Free escription pecificay designed for utomotive
More informationSMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor
Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD -95441 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to
More informationAUIRFS4115 AUIRFSL4115
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More information225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More informationIRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
P - 9572 IRF7220PbF HEXFET Power MOFET Utra Low On-Resistance P-Channe MOFET urface Mount vaiabe in Tape & Ree Lead-Free G 2 3 8 7 4 5 V = -4V R (on) = 0.02Ω escription These P-Channe MOFETs from Internationa
More informationIRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance.
PD - 9609 dvanced Process Technoogy Utra Low On-Resistance Dua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 D D D2
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8
l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs
More informationIRGS4062DPbF IRGSL4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET P-944B IF8PbF EXFET Power MOSFET Appications igh frequency C-C converters SS Son max I W 6A Benefits Low Gate to rain Charge to educe Switching Losses Fuy Characterized Capacitance Incuding
More informationProduct Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
More informationAbsolute Maximum Ratings Parameter Max. Units
PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested
More informationAbsolute Maximum Ratings Max.
PD 97049B IRF52SPbF IRF52LPbF HEXFET Power MOSFET Advanced Process Technoogy Utra Low OnResistance 50 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Some Parameters are Different
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8
P - 956B RF9952 Generation Technoogy Utra Low On-Resistance ua N and P Channe MOSFET Surface Mount ery Low Gate Charge and Switching Losses Fuy vaanche Rated S G S2 G2 N-CHNNEL MOSFET 8 2 3 4 7 6 5 2 2
More informationIRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17
More informationA I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units
DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationIRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark
More informationIRF7406 PD C. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.045Ω PRELIMINARY. Description SO-8. Absolute Maximum Ratings
l Generation V Technology l Ultra Low OnResistance l PChannel Mosfet l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching escription Fifth Generation HEXFETs from International
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize
More informationP-CHANNEL MOSFET. Top View
Generation Technoogy Utra Low On-Resistance ua N and P Channe MOSFET ery Sma SOIC Package Low Profie (
More informationIRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIRF5800. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.085Ω
P - 93850 IRF5800 HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Low Gate Charge G 2 6 5 3 4 S V SS = -30V R S(on) = 0.085Ω escription These P-channe MOSFETs
More informationIRGB4055PbF IRGS4055PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
More informationSMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units
SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationIRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features
PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE
More information225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationIRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationIRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
More informationIRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power
More informationIRLML2803 PD C. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.25Ω
Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode
More informationPower MOSFET D 2 PAK (TO-263) G D. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20
Power MOSFET DTW2070 PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 0 V 0.09 Q g (Max.) (nc) 70 Q gs (nc) 3 Q gd (nc) 39 Configuration Single FETURES Halogen-free ccording to IEC 6249-2-2 Definition Surface
More informationIRGB4B60K IRGS4B60K IRGSL4B60K
INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationIXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified
Advance Technical Information X2-Class HiPerFET TM Power MOSFET AEC Q Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode IXFH42N5X2A V SS = 5V I 25 = 42A 72m R S(on) TO-247 Symbol
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationPower MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50
Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.
AUTOMOTIVE GRADE Features Advanced Planar Technology Ultra Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 5 C Operating Temperature Lead-Free,
More informationIR MOSFET StrongIRFET IRF40DM229
I, rain Current (A) IR MOFET trongirfet IRF40M229 Application Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationAO V Dual P + N-Channel MOSFET
4V Dual P + N-Channel MOSFET General Description The AO467 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters
More informationIRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF
PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction
More informationAOP606 Complementary Enhancement Mode Field Effect Transistor
AOP66 Complementary Enhancement Mode Field Effect Transistor General Description The AOP66 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationProduct Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
More informationParameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationIRGB30B60K IRGS30B60K IRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol
3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V
General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationProduct Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
More informationLinear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
P- 93758B IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated G 2 3 4 6 5 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs
More informationI D T A = +25 C. Part Number Case Packaging DMC4029SK4-13 TO ,500/Tape & Reel
AVANCE INFORMATION COMPLEMENTARY PAIR ENHANCEMENT MOE MOSFET Product Summary evice BV SS R S(ON) Max I T A = +5 C Q 4V 4mΩ @ V GS = V 8.3A 3mΩ @ V GS = 4.5V 7.A Q -4V 45mΩ @ V GS = -V -6.A 55mΩ @ V GS
More informationIRLZ34N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.035Ω I D = 30A
Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationAO4620 Complementary Enhancement Mode Field Effect Transistor
AO46 Complementary Enhancement Mode Field Effect Transistor General Description The AO46 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationSSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description
Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity
More informationECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units
IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor
P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V
More informationIXFK300N20X3 IXFX300N20X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK3N2X3 IXFX3N2X3 V SS I 25 R S(on) = 2V = 3A 4m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More information