V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f

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1 pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized valanche Voltage and Current l 20V V GS Max. Gate Rating l 0% tested for Rg l Lead-Free 8 S S S G HEXFET Power MOSFET V SS R S(on) max Qg 30V 3.3m:@V GS = V 30nC Top View SO-8 P B bsolute Maximum Ratings V S V GS T = 25 C T = 70 C I M = 25 C = 70 C T J T STG Parameter rain-to-source Voltage Gate-to-Source Voltage Continuous rain Current, V V Continuous rain Current, V V Pulsed rain Current c Power issipation Power issipation Linear erating Factor Operating Junction and Storage Temperature Range Max. 30 ± to 50 Units V W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 R θj Junction-to-mbient f C/W 50 Notes through are on page /04/09

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V ΒV SS / T J Breakdown Voltage Temp. Coefficient V/ C gfs Forward Transconductance 87 S V S = 5V, I = 6 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 7.5 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 3. V GS = 4.5V nc Q gd Gate-to-rain Charge 9.8 I = 6 Q godr Gate Charge Overdrive 9.6 See Figs. 5 & 6 Q sw Switch Charge (Q gs2 Q gd ) 2.9 Q oss Output Charge 8 nc V S = 6V, V GS = 0V R g Gate Resistance.0.6 Ω t d(on) Turn-On elay Time 6 V = 5V, V GS = 4.5V t r Rise Time 9 I = 6 ns t d(off) Turn-Off elay Time 8 R G =.8Ω t f Fall Time See Fig. 8 C iss Input Capacitance 4090 V GS = 0V C oss Output Capacitance 8 pf V S = 5V C rss Reverse Transfer Capacitance 390 =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 350 mj I R valanche Current c 6 iode Characteristics Conditions V GS = 0V, I = 250µ Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = V, I = 20 e mω V GS = 4.5V, I = 6 e V GS(th) Gate Threshold Voltage V V S = V GS, I = 0µ V GS(th) Gate Threshold Voltage Coefficient -5.4 mv/ C V S = V GS, I = 250µ I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µ 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 V GS = 20V n Gate-to-Source Reverse Leakage -0 V GS = -20V Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 3. I SM (Body iode) showing the G Pulsed Source Current integral reverse 70 S (Body iode)c p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 6, V GS = 0V e t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = 6, V = 5V Q rr Reverse Recovery Charge nc di/dt = 430/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSL) 2

3 I, rain-to-source Current () R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () µs PULSE WITH Tj = 25 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V µs PULSE WITH Tj = 50 C VGS TOP V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V V 2.3V V S, rain-to-source Voltage (V) 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 00 0 V S = 5V 60µs PULSE WITH.6.4 I = 2 V GS = V.2 T J = 50 C T J = 25 C V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 I S, Reverse rain Current () I, rain-to-source Current () C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 0000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 6 V S = 24V V S = 5V 000 C iss C oss 2.0 C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERTION IN THIS RE LIMITE BY R S (on) 0 0 msec 0µsec T J = 50 C T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) T = 25 C msec Tj = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 I, rain Current () V GS(th), Gate Threshold Voltage (V) I = 250µ T, mbient Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. mbient Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W 0 0. = SINGLE PULSE ( THERML RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri R 4 R 4 τ 4 τ 4 τ τ Ri ( C/W) τi (sec) Notes:. uty factor = t / t Peak T J= P M x Z thj T E-006 E t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S(on), rain-to -Source On Resistance (m Ω) E S, Single Pulse valanche Energy (mj) 2 I = I TOP.0.4 BOTTOM T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 3. Maximum valanche Energy vs. rain Current V (BR)SS V S R G 20V tp L.U.T IS 0.0Ω 5V RIVER - V I S tp 0 20K K UT L VCC Fig 4. Unclamped Inductive Test Circuit and Waveform Id Fig 5. Gate Charge Test Circuit Vds Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 6. Gate Charge Waveform 6

7 -.U.T - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 7. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V S R V S 90% V GS.U.T. R G - V V GS Pulse Width µs uty Factor 0. % % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms 7

8 SO-8 Package Outline(Mosfet & Fetky) imensions are shown in milimeters (inches) ' % ',0,&(6 0, 0; 0,//,0(7(56 0, 0; ( >@ E F ' ( H %6,& %6,& H %6,& %6,& ; H. / \ H.[ & \ ;E >@ ;/ ;F >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,2,//,0(7(5 ',0(6,265(62:,,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/(')2562/'(5,*72 68%6757( >@ )22735,7 ;>@ SO-8 Part Marking Information ;>@ ;>@ (;03/(7,6,6,5)026)(7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 ',6*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing please refer to IR website at 8

9 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 2.7mH, R G = 25Ω, I S = 6. Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 90 C. Revision History ate Comment 6/4/2009 Maximum Rds(on) at Vgs =V changed from 3.7mΩ to 3.3mΩ. ll other parameters are unchanged. Note: For the most current drawing please refer to IR website at ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.06/

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