VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

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1 HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I F.4 V t rr typ. 8 ns T J max. 50 C Diode variation Single die Very low Q rr Guaranteed avalanche Specified at operating conditions Meets MSL level, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see BENEFITS Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION / PPLICTIONS These diodes are optimized to reduce losses and EMI / RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for freewheeling, flyback, power converters, motor drives, and other applications where high speed and reduced switching losses are design requirements. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Cathode to anode voltage V RRM 600 V Maximum continuous forward current I F T C = 0 C 8 Single pulse forward current I FSM 60 Peak repetitive forward current I FRM 24 Maximum power dissipation P D T C = 0 C 4 W Operating junction and storage temperature range T J, T Stg -55 to +50 C ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 μ Forward voltage V F I F = 6 See fig I F = V I F = 8, T J = 25 C Maximum reverse V R = V R rated I leakage current R T J = 25 C, V R = 0.8 x V R rated μ Junction capacitance C T See fig pf Series inductance L S Measured lead to lead 5 mm from package body nh Revision: 22-Jun-5 Document Number: 94042

2 Reverse recovery time t rr DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS ns I F =.0, di F /dt = 200 /μs, V R = 30 V T J = 25 C Peak recovery current I RRM I F = 8 T J = 25 C di F /dt = 200 /μs Reverse recovery charge Q rr nc T J = 25 C Rate of fall of recovery current di (rec)m /dt T J = 25 C /μs THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, junction to case R thjc Thermal resistance, junction to ambient R thj Typical socket mount C/W Weight g oz. Marking device Case style D-PK HF08SD60S Revision: 22-Jun-5 2 Document Number: 94042

3 I F - Instantaneous Forward Current () 0 T J = 50 C T J = 25 C I R - Reverse Current (µ) T J = 50 C T J = 25 C V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 0 C T - Junction Capacitance (pf) 0 00 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Response 0. Single pulse (thermal resistance) D = 0.50 D = 0.20 D = 0. D = 0.05 D = 0.02 D = 0.0 P DM Notes:. Duty factor D = t /t 2 2. Peak T J = P DM x Z thjc + T C t t t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Revision: 22-Jun-5 3 Document Number: 94042

4 t rr (ns) I F = 6 I F = 8 I F = 4 Q rr (nc) T J = 25 C I F = 6 I F = 8 I F = T J = 25 C 0 00 di F /dt (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt di F /dt (/µs) Fig. 7 - Typical Stored Charge vs. di F /dt I RR () I F = 6 I F = 8 I F = 4 T J = 25 C di F /dt (/µs) Fig. 6 - Typical Recovery Current vs. di F /dt di (rec)m /dt (/µs) T J = 25 C I F = 6 I F = 8 I F = di F /dt (/µs) Fig. 8 - Typical di (rec)m /dt vs. di F /dt Revision: 22-Jun-5 4 Document Number: 94042

5 L = 70 μh 0.0 Ω di F /dt adjust G D IRFP250 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr = t rr x I RRM 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 22-Jun-5 5 Document Number: 94042

6 ORDERING INFORMTION TBLE Device code VS- HF 08 SD 60 S TR PbF product 2 - HEXFRED family 3 - Electron irradiated 4 - Current rating (08 = 8 ) 5 - D-PK 6 - Voltage rating (60 = 600 V) 7 - S = D-PK 8 - TR = tape and reel TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - PbF = lead (Pb)-free P = lead (Pb)-free (for TRR and TRL) Dimensions Part marking information Packaging information LINKS TO RELTED DOCUMENTS Revision: 22-Jun-5 6 Document Number: 94042

7 DIMENSIONS in millimeters and inches D-PK (TO-252) Outline Dimensions E (5) C Pad layout Ø 2 b3 (3) 0.0 M C B L3 (3) 4 Ø B D (5) 2 3 L4 c2 Seating plane H D 4 E (2.40) (.40) MIN. (6.74) MIN. (6.23) (2) L5 b2 2 x e b 0.0 M C B Lead tip Detail C Detail C Rotated 90 CW Scale: 20: Gauge plane L2 Ø c (L) C C L C H (7) Seating plane 0.06 MIN. (.524) (2.38) (2.8) MIN. (2.28) SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES e 2.29 BSC BSC H b L b L 2.74 BSC 0.8 REF. b L2 0.5 BSC BSC c L c L D L D Ø 0 0 E Ø E Ø Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension uncontrolled in L5 (3) Dimension D, E, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.3 and 0.25 mm (0.005 and 0.") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b and c applied to base metal only (7) Datum and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252 Revision: 05-Dec-2 Document Number: 9506

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