50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
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1 "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor (NTC) Aluminum Nitride DBC Very Low Stray Inductance Design for High Speed Operation UL approved ( file E78996 ) V CES = 6V I C = A, T C = 25 C Benefits Optimized for Welding, UPS and SMPS Applications Operating Frequencies > 2 khz Hard Switching, >2 khz Resonant Mode Low EMI, requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters Max Units V CES Collector-to-Emitter Voltage 6 V I C Continuos Collector T C = 25 C T C = 22 C 5 I CM Pulsed Collector Current 2 I LM Peak Switching Current 2 I F Diode Continuous Forward T C = C 48 I FM Peak Diode Forward Current 2 V GE Gate-to-Emitter Voltage ± 2 V V ISOL RMS Isolation Voltage, Any Terminal to Case, t = min 25 P D Maximum Power T C = 25 C 445 W T C = C 75 T C = 25 C T C = C 83
2 Electrical = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 25µA V CE(on) Collector-to-Emitter Voltage V GE = 5V, I C = 5A V GE = 5V, I C = A V GE = 5V, I C = A, = 5 C V GE(th) Gate Threshold Voltage 3 6 I C =.5mA B VR Diode Reverse Breakdown Voltage 6 I R = 2µA V GE(th) / Temperature Coeff. of - 3 mv/ C V CE = V GE, I C = 5µA Threshold Voltage g fe Forward Transconductance S V CE = 5V, I C = A I CES Collector-to-Emiter Leaking Current.25 ma V GE = V, V CE = 6V 6 V GE = V, V CE = 6V, = 5 C V FM Diode Forward Voltage Drop V I F = A, V GE = V I F = A, V GE = V, = 5 C I GES Gate-to-Emitter Leakage Current ± 25 na V GE = ± 2V Switching = 25 C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge (turn-on) nc I C = A Qge Gate-Emitter Charge (turn-on) V CC = 48V Qgc Gate-Collector Charge (turn-on) V GE = 5V E on Turn-On Switching Loss.7.2 mj I C = 5A, V CC = 48V, V GE = 5V, Eoff Turn-Off Switching Loss R g = 5Ω Ets Total Switching Loss Energy losses include tail and diode reverse recovery E on Turn-On Switching Loss..7 mj I C = 5A, V CC = 48V, V GE = 5V Eoff Turn-Off Switching Loss R g = 5Ω, = 25 C Ets Total Switching Loss Energy losses include tail and diode reverse recovery C ies Input Capacitance V GE = V C oes Output Capacitance pf V CC = 3V C res Reverse Transfer Capacitance 2 82 f =. MHz C t Diode Junction Capacitance 8 77 V r = 6V, f =. MHz trr Diode Reverse Recovery Time 99 5 ns V CC = 48V, I C = 5A Irr Diode Peak Reverse Current A di/dt = 2A/µs Qrr Diode Recovery Charge nc R g = 5Ω di (rec) M/ dt Diode PeakRate of Fall of Recovery 236 A/µs During t b 2
3 Load Current ( A ) Thermistor Specifications (T only) Parameters Min Typ Max Units Test Conditions () R Resistance 3 kω T = 25 C β () (2) Sensitivity index of the thermistor 4 K T = 25 C material T = 85 C () T,T are thermistor's temperatures R (2) = exp [ β ( )], Temperatures in kelvin R T T Thermal- Mechanical Specifications Parameters Min Typ Max Units Operating Junction Temperature Range C T STG Storage Temperature Range R thjc Junction-to-Case IGBT.8.28 C/ W Diode.4.6 R thcs Case-to-Sink Module.6 (Heatsink Compound Thermal Conductivity = W/mK) T Mounting torque to heatsink (3) 3 ± % Nm Wt Weight 66 g (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads 75 Duty cycle : 5% Tj = 25 C Tsink = 9 C Power Dissipation = 92W f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 3
4 I C Maximum DC Collector Current (A) V CE, Collector-to Emitter Voltage (V) I C, Collector-to-Emitter Current (Α). IC, Collector-to-Emitter Current (A) = 5C = 25C Vge = 5V 38µs Pulse Width V CE, Collector-to-Emitter Voltage (V) = 5 C. = 25 C. V CC = 5V 2µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 2 2 I C = A I C = 5A I C = 25A T C Case Temperature ( C) , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 4
5 Thermal Response ( Z thjc )... D = τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri R R 2 R 3 R R 2 R 3 τ C τ Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-5 E-6 E t, Rectangular Pulse Duration (sec) Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 5
6 Switching Losses (mj) Total Switching Losses (mj) C, Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) 4 2 Cies V GE = V, f = MHZ C = C +C, C SHORTED ies ge gc ce C = C res gc C = C + C oes ce gc I C = A V CE = 48V 8 6 Coes Cres V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 48V V GE = 5V = 25 C I C = A E OFF R G = 5.Ω V GE = 5V V CC = 48V I C = A I C = 5A 2. E ON I C = 25A R G, Gate Resistance ( Ω) , Junction Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 6
7 Total Switching Losses (mj) Instantaneous Forward Current - I F ( A ) I C, Collector-to-Emitter Current (A) 2 R G = 5.Ω = 25 C V GE = 5V V GE = 2V = 25 V CC = 48V I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA = 5 C = 25 C = 25 C Forward Voltage Drop - V F ( V ) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 7
8 Q rr - (nc) di(rec)m/dt - (A/µs) t rr - (ns) I RRM - (A) V R = 48V = 25 C = 25 C I F = A IF = 5A IF = 25A 3 I F = A I F = 5A I F = 25A di f / dt - (A / µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt V R = 48V = 25 C = 25 C di f / dt - (A / µs) Fig. 5 - Typical Recovery Current vs. di f /dt 2 V R = 48V 6 I F = A I F = 5A I F = 25A I F = A IF = 5A IF = 25A = 25 C = 25 C V R = 48V = 25 C = 25 C di f / dt - (A / µs) Fig. 6 - Typical Stored Charge vs. di f /dt di f / dt - (A / µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 8
9 Outline Table Circuit Diagram Resistance in ohms Dimensions in millimetres Note: unused terminals are not assembled in the package 9
10 Ordering Information Table Device Code 5 MT 6 U LS Current rating (5 = 5A) 2 - Essential Part Number 3 - Voltage code (6= 6V) 4 - Speed/ Type (U = Ultra Fast IGBT) 5 - Circuit Configuration (LS = Low Side Chopper) 6 - Special Option Empty = no special option T = Thermistor Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. /2
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