SMPS MOSFET. V DSS R DS(on) max(mw) I D

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1 P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify esign, (See pp. Note N0) l Fully Characterized valanche Voltage and Current S S S G Top View SO-8 bsolute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V V 2 T = 70 C Continuous rain Current, V V 9.6 I M Pulsed rain Current 96 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt.0 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 3/9/02

2 IRF743 T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.03 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V mω GS = V, I = 7.2 ƒ 8 V GS = 4.5V, I = 6.0 V GS(th) Gate Threshold Voltage.0 V V S = V GS, I = 250µ I SS rain-to-source Leakage Current.0 V µ S = 24V, V GS = 0V 25 V S = 24V, V GS = 0V, T J = 25 C I Gate-to-Source Forward Leakage 0 V GS = 20V GSS n Gate-to-Source Reverse Leakage -0 V GS = -20V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 6 S V S = V, I = 7.2 Q g Total Gate Charge I = 7.2 Q gs Gate-to-Source Charge 7.9 nc V S = 24V Q gd Gate-to-rain ("Miller") Charge 9.2 V GS = V, t d(on) Turn-On elay Time 8.8 V = 0V t r Rise Time 8.0 ns I = 7.2 t d(off) Turn-Off elay Time 35 R G = 6.2Ω t f Fall Time 4 V GS = V ƒ C iss Input Capacitance 670 V GS = 0V C oss Output Capacitance 670 V S = 25V C rss Reverse Transfer Capacitance 0 pf ƒ =.0MHz C oss Output Capacitance 2290 V GS = 0V, V S =.0V, ƒ =.0MHz C oss Output Capacitance 680 V GS = 0V, V S = 24V, ƒ =.0MHz C oss eff. Effective Output Capacitance 20 V GS = 0V, V S = 0V to 24V valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 20 mj I R valanche Current 7.2 iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 3. (Body iode) showing the G I SM Pulsed Source Current integral reverse 96 (Body iode) p-n junction diode. S V S iode Forward Voltage.0 V T J = 25 C, I S = 7.2, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 7.2 Q rr Reverse RecoveryCharge 74 nc di/dt = 0/µs ƒ 2

3 I, rain-to-source Current ( ) I, rain-to-source Current () I, rain-to-source Current () IRF743 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V V 20µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 0. 20µs PULSE WITH Tj = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 50 C T J = 25 C V S = 5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) I S, Reverse rain Current () I, rain-to-source Current () V GS, Gate-to-Source Voltage (V) IRF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd 2 8 I = 7.2 V S = 24V VS= 5V VS= 6.0V 00 Ciss Coss 6 0 Crss V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0.0 T J = 50 C 00 OPERTION IN THIS RE LIMITE BY R S (on) µsec T J = 25 C V GS = 0V V S, Source-torain Voltage (V) Tc = 25 C Tj = 50 C Single Pulse msec msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 IRF743 I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. mbient Temperature Fig a. Switching Time Test Circuit V S 90% R G V GS V V S Pulse Width µs uty Factor 0. % R.U.T. % V GS t d(on) t r t d(off) t f + - V Fig b. Switching Time Waveforms 0 Thermal Response (Z thj ) = Notes: SINGLE PULSE. uty factor = t / t 2 (THERML RESPONSE) 2. Peak T J= P M x Z thj + T t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance ( Ω) IRF R S(on), rain-to -Source On Resistance ( Ω) V GS = 4.5V V GS = V I = I, rain Current () V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 2V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I S 0.0Ω Q G Q G Charge 5V RIVER + - V E S, Single Pulse valanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum valanche Energy and Waveforms Vs. rain Current 6

7 IRF743 SO-8 Package etails E 6 6X e B H 0.25 [.0] IM INCHES MIL L IME T E RS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOTES:. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. SO-8 Part Marking 6.46 [.255] 3X.27 [.050] FOOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF7 (MOSFET) INTERNT IONL RECTIFIER LOGO YWW XXXX F7 TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK LOT COE PRT NUMBER 7

8 IRF743 SO-8 Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.4mH R G = 25Ω, I S = 7.2. ƒ Pulse width 300µs; duty cycle 2%. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) When mounted on inch square copper board C oss eff. is a fixed capacitance that gives the same charging time as C oss while V S is rising from 0 to 80% V SS I S 7.2, di/dt 20/µs, V V (BR)SS, T J 50 C ata and specifications subject to change without notice. This product has been designed and qualified for the utomotive [Q] market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.3/02 8

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor