SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor

Size: px
Start display at page:

Download "SMPS MOSFET. V DSS R DS(on) max I D. -150V GS = -10V -27A P C = 25 C Maximum Power Dissipation 250 Linear Derating Factor"

Transcription

1 Appications Reset Switch for Active Camp Reset DC-DC converters Lead-Free SMPS MOSFET PD HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fuy Characterized Capacitance Incuding Effective C OSS to Simpify Design (See App. Note AN1) Fuy Characterized Avaanche Votage and Current G S TO-220AB Absoute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Votage -150 V Gate-to-Source Votage ± 20 I T C = 25 C Continuous Drain V -27 A I T C = C Continuous Drain V -19 I DM Pused Drain Current c -1 P C = 25 C Maximum Power Dissipation 250 W Linear Derating Factor 1.6 W/ C dv/dt Peak Diode Recovery dv/dt h 8.2 V/ns T J Operating Junction and -55 to C T STG Storage Temperature Range Sodering Temperature, for seconds 300 (1.6mm from case ) bf in (1.1N m) Mounting torque, 6-32 or M3 screw Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 0.61 C/W R θcs Case-to-Sink, Fat, Greased Surface g 0.50 R θja Junction-to-Ambient g 62 Notes through are on page /28/04

2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage -150 V = 0V, I D = -250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = -1mA R DS(on) Static Drain-to-Source On-Resistance mω = -V, I D = -16A f (th) Gate Threshod Votage V V DS =, I D = -250µA I DSS Drain-to-Source Leakage Current -25 µa V DS = -120V, = 0V -250 V DS = -120V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage - na = -20V Gate-to-Source Reverse Leakage = 20V T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V DS = -50V, I D = -16A Q g Tota Gate Charge 71 1 I D = -16A Q gs Gate-to-Source Charge 21 nc V DS = -120V Q gd Gate-to-Drain ("Mier") Charge 32 = -V f t d(on) Turn-On Deay Time 21 V DD = -75V t r Rise Time 70 ns I D = -16A t d(off) Turn-Off Deay Time 35 R G = 3.9Ω t f Fa Time 30 = -V f C iss Input Capacitance 22 = 0V C oss Output Capacitance 370 V DS = -25V C rss Reverse Transfer Capacitance 89 pf ƒ = 1.0MHz C oss Output Capacitance 2220 = 0V, V DS = -1.0V, ƒ = 1.0MHz C oss Output Capacitance 170 = 0V, V DS = -120V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 340 = 0V, V DS = 0V to -120V Avaanche Characteristics Parameter Typ. Max. Units E AS Singe Puse Avaanche Energyd 2 mj I AR Avaanche Currentc -16 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current -27 (Body Diode) A I SM Pused Source Current -1 (Body Diode)c V SD Diode Forward Votage -1.6 V t rr Reverse Recovery Time 150 ns Q rr Reverse Recovery Charge 860 nc MOSFET symbo Conditions showing the integra reverse G S p-n junction diode. T J = 25 C, I S = -16A, = 0V f T J = 25 C, I F = -16A, V DD = -25V di/dt = -A/µs f D 2

3 -I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normaized) -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Votage (V) 1-4.5V 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics T J = 25 C T J = 175 C I D = -27A = -V V DS = 50V 60µs PULSE WIDTH , Gate-to-Source Votage (V) T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance vs. Temperature 3

4 -I SD, Reverse Drain Current (A) -I D, Drain-to-Source Current (A) C, Capacitance(pF) -, Gate-to-Source Votage (V) = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = -16A V DS = 120V V DS = 75V V DS = 30V 8.0 C iss C oss 4.0 C rss V DS, Drain-to-Source Votage (V) Q G Tota Gate Charge (nc) Fig 5. Typica Capacitance vs. Drain-to-Source Votage Fig 6. Typica Gate Charge vs. Gate-to-Source Votage OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 175 C.00 T J = 25 C 1.00 = 0V V SD, Source-to-Drain Votage (V) 1 Tc = 25 C Tj = 175 C Singe Puse µsec 1msec msec 1 0 -V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 -I D, Drain Current (A) 30 V DS R D R G D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Ambient Temperature Puse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 D = 0.50 Therma Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri 1E-006 1E t 1, Rectanguar Puse Duration (sec) Ri ( C/W) τi (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Ambient τ C τ 5

6 E AS, Singe Puse Avaanche Energy (mj) R DS (on), Drain-to-Source On Resistance (mω) R DS(on), Drain-to -Source On Resistance (mω) = -V I D = -27A I D, Drain Current (A) -, Gate -to -Source Votage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Votage Current Reguator Same Type as D.U.T. 50KΩ - Q G 12V.2µF.3µF Q GS Q GD 900-3mA I G D.U.T. I D Current Samping Resistors - + V DS Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V G Charge I D TOP -4.6A -6.3A BOTTOM -16A 400 VDS L 300 I AS R G -20V tp D.U.T IAS 0.01Ω DRIVER V DD A tp V (BR)DSS 15V Starting T J, Junction Temperature ( C) Fig 15a&b. Uncamped Inductive Test circuit Fig 15c. Maximum Avaanche Energy and Waveforms vs. Drain Current 6

7 TO-220AB Package Outine Dimensions are shown in miimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 1.40 (.055) 3X 1.15 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assemby ine position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 1.6mH, R G = 25Ω, I AS = -17A. ƒ I SD -17A, di/dt -520A/µs, V DD V (BR)DSS, T J 175 C. Puse width 300µs; duty cyce 2%. R q is measured at T J of approximatey 90 C. Data and specifications subject to change without notice. This product has been designed and quaified for the Industria market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information.06/04 7

8 Note: For the most current drawings pease refer to the IR website at:

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS

V DSS. Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage 30 V GS PD - 97A IRF797PbF Appications Dua SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and Set-Top Box V DSS HEXFET Power MOSFET R DS(on) max 3V Q.4m:@V GS = V 9.A

More information

Absolute Maximum Ratings Max.

Absolute Maximum Ratings Max. PD 97049B IRF52SPbF IRF52LPbF HEXFET Power MOSFET Advanced Process Technoogy Utra Low OnResistance 50 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Some Parameters are Different

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize

More information

V DSS. 30V Q1 GS = 10V 6.4A Q2 GS = 10V 9.7A

V DSS. 30V Q1 GS = 10V 6.4A Q2 GS = 10V 9.7A PD 9794A IRF7902PbF Appications Dua SO8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoes and SetTop Box V DSS HEXFET Power MOSFET R DS(on) max 30V Q 22.6m:@V GS =

More information

SMPS MOSFET. V DSS R DS(on) max (mw) I D

SMPS MOSFET. V DSS R DS(on) max (mw) I D SMPS MOSFET P- 9628 Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q] Quaified Lead-Free escription Specificay

More information

IRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance.

IRF7342QPbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω. Description. Absolute Maximum Ratings. Thermal Resistance. PD - 9609 dvanced Process Technoogy Utra Low On-Resistance Dua P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 D D D2

More information

Distributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached materia are the property of its owner. Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET P-944B IF8PbF EXFET Power MOSFET Appications igh frequency C-C converters SS Son max I W 6A Benefits Low Gate to rain Charge to educe Switching Losses Fuy Characterized Capacitance Incuding

More information

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 95675 IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G 2 6 5 3 4 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe

More information

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor

V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor PD - 94420 IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized

More information

SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units

SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units P- 95032 SMPS MOSFET ppications High Frequency C-C Isoated Converters with Synchronous Rectification for Teecom and Industria use High Frequency Buck Converters for Computer Processor Power Lead-Free IRF7457PbF

More information

TO-220AB contribute to its wide acceptance throughout the industry.

TO-220AB contribute to its wide acceptance throughout the industry. Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize

More information

Storage Temperature Range V ISO Insulation Withstand Voltage (AC-RMS) 2.5 kv Mounting torque, M4 srew 1.3 N m

Storage Temperature Range V ISO Insulation Withstand Voltage (AC-RMS) 2.5 kv Mounting torque, M4 srew 1.3 N m PD 9650A FA57SA50LC Fuy Isoated Package Easy to Use and Parae Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Gate Charge Device Low Drain to Case Capacitance Low

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D P- 95276 SMPS MOSFET IRF7470PbF ppications High Frequency C-C Converters with Synchronous Rectification Lead-Free HEXFET Power MOSFET V SS R S(on) max I 40V 3mΩ Benefits Utra-Low Gate Impedance Very Low

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units V DS -30 V V GS Max ± 20 V PD - 9759 * HEXFET Power MOSFET R DS(on) max (@V GS = -V) 65 mω ' R DS(on) max (@V GS = -4.5V) 270 mω 6 Micro3 TM (SOT-23) Application(s) System/Load Switch Features and Benefits

More information

IRLML2030TRPbF HEXFET Power MOSFET

IRLML2030TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits

More information

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units V DSS 40 V V GS Max ± 6 V R DS(on) max (@V GS = V) 56 mω G 3 D PD - 96309A HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) Application(s) Load/ System Switch DC Motor Drive 78 mω S 2 Micro3 TM (SOT-23)

More information

Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units

Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units P - 958 IRF734PbF Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = -20V R S(on) = 0.058Ω

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM

More information

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.

IRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge. PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)

More information

Symbol Parameter Max. 100 P = 25 C Power Dissipation V GS Gate-to-Source Voltage ± 12. V/ns T J C T STG

Symbol Parameter Max. 100 P = 25 C Power Dissipation V GS Gate-to-Source Voltage ± 12. V/ns T J C T STG Low On-Resistance Low Gate Charge N-Channe MOSFET Idea for mobie processor C-C converters Surface Mount 00% R G Tested escription This advanced technoogy HEXFET Power MOSFET achieves an unprecedented baance

More information

Si4410DYPbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω

Si4410DYPbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive Lead-Free escription This N-channe HEXFET Power MOSFET is produced using Internationa Rectifier's advanced HEXFET power MOSFET

More information

IRGB4B60K IRGS4B60K IRGSL4B60K

IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR PD - 9633A IRGBB6K IRGSB6K IRGSLB6K Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature

More information

Si4435DYPbF HEXFET Power MOSFET

Si4435DYPbF HEXFET Power MOSFET P- 9533 Si4435YPbF HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Lead-Free S S S G 2 3 8 7 6 4 5 V SS = -30V R S(on) = 0.020Ω escription These P-channe HEXFET

More information

Distributed by: www.jameco.com 800834242 The content and copyrights of the attached materia are the property of its owner. dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast

More information

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features PDP TRENCH IGBT PD-96357 IRG7PA19UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E TM PULSE

More information

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9968 IRGPB6PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

500V N-Channel MOSFET

500V N-Channel MOSFET 830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize

More information

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units

SMPS IGBT. n-channel. Thermal Resistance Parameter Min. Typ. Max. Units SMPS IGBT PD - 94625B IRGP5B6PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

IRGB30B60K IRGS30B60K IRGSL30B60K

IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE on) Non Punch Through IGBT Technology. µs Short Circuit Capability. Square RBSOA. Positive VCE on) Temperature Coefficient. Maximum Junction Temperature

More information

IRLR024N IRLU024N HEXFET Power MOSFET

IRLR024N IRLU024N HEXFET Power MOSFET PD- 9363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Leve Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V R DS(on)

More information

SMPS MOSFET. V DSS R DS(on) max (mω)

SMPS MOSFET. V DSS R DS(on) max (mω) P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche

More information

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE WARP SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE SMPS IGBT PD - 9 IRGPB6PDPbF Applications Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power

More information

PolarHT TM Power MOSFET

PolarHT TM Power MOSFET PoarHT TM Power MOSFET = 5 V I D25 = A R DS(on) m Ω N-Channe Enhancement Mode Avaanche Rated Symbo Test Conditions Maximum Ratings TO-264 (IXTK) = 25 C to 75 C V V DGR = 25 C to 75 C; R GS = MΩ V Continuous

More information

IRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 93758 IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount vaiabe in Tape & Ree 2.5V Rated G 2 6 5 3 4 S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs from

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units PD - 97397A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses 5 µs short circuit SOA Square RBSOA % of the parts tested

More information

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units

A I DM. W/ C V GS Gate-to-Source Voltage ± 16. Thermal Resistance Symbol Parameter Typ. Max. Units DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard

More information

TSP10N60M / TSF10N60M

TSP10N60M / TSF10N60M TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor

225 P C = 25 C Power Dissipation 40 P C = 100 C Power Dissipation Linear Derating Factor PDP TRENCH IGBT PD - 962 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved

More information

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 1 www.irf.com 4/11/8 PD - 97188A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology C Low switching losses Maximum Junction temperature 17

More information

IRF7322D1 FETKY ä MOSFET / Schottky Diode

IRF7322D1 FETKY ä MOSFET / Schottky Diode P- 9705B IRF7322 FETKY ä MOSFET / Schottky iode Co-packaged HEXFET Power MOSFET and Schottky iode Idea For Buck Reguator ppications P-Channe HEXFET Low V F Schottky Rectifier Generation 5 Technoogy SO-8

More information

PolarHT TM HiPerFET Power MOSFET

PolarHT TM HiPerFET Power MOSFET PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Fast Intrinsic Diode Avaanche Rated S = V I D25 = 17 A R DS(on) 9. mω t rr 15 ns Symbo Test Conditions Maximum Ratings S = 25 C to 175 C V V DGR

More information

IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF

IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

More information

225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

225 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High

More information

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized

More information

IRGS4062DPbF IRGSL4062DPbF

IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 µs short circuit SOA Square

More information

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA % of The Parts Tested for I LM Positive V

More information

PolarHT TM Power MOSFET

PolarHT TM Power MOSFET PoarHT TM Power MOSFET N-Channe Enhancement Mode Avaanche Rated S = 6 V I D = A R DS(on) 6. mω Symbo Test Conditions Maximum Ratings TO-3P (IXTQ) S = C to C 6 V V DGR = C to C; R GS = MΩ 6 V Transient

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 l Advanced Process Technology l Ultra Low OnResistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs

More information

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. Benefits Benchmark

More information

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance

IRGP30B60KD-EP V CES = 600V I C = 30A, T C =100 C. t sc > 10µs, T J =150 C. V CE(on) typ. = 1.95V. Absolute Maximum Ratings. Thermal Resistance INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (on) Non Punch Through IGBT Technology. Low Diode V F. 1µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l Advanced Prcess Technlgy l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8.  1 l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully

More information

IRLZ34N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.035Ω I D = 30A

IRLZ34N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.035Ω I D = 30A Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced

More information

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain

More information

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free

IRF7220PbF. HEXFET Power MOSFET. R DS(on) = 0.012Ω. Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free P - 9572 IRF7220PbF HEXFET Power MOFET Utra Low On-Resistance P-Channe MOFET urface Mount vaiabe in Tape & Ree Lead-Free G 2 3 8 7 4 5 V = -4V R (on) = 0.02Ω escription These P-Channe MOFETs from Internationa

More information

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF PD - 973 INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 1µs Short Circuit Capability Square RBSOA G Positive VCE (on) Temperature Coefficient Maximum Junction

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8 P - 956B RF9952 Generation Technoogy Utra Low On-Resistance ua N and P Channe MOSFET Surface Mount ery Low Gate Charge and Switching Losses Fuy vaanche Rated S G S2 G2 N-CHNNEL MOSFET 8 2 3 4 7 6 5 2 2

More information

SSF7NS65UF 650V N-Channel MOSFET

SSF7NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) 650V 0.6Ω (typ.) I D 7A 1 Features and Benefits TO-220F Marking and Pin Assignment S c h e m a ti c Dia g r a m High dv/dt and avalanche capabilities 100% avalanche

More information

IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF

IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. μs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse

More information

IRGB4062DPbF IRGP4062DPbF

IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 75 C 5 µs short circuit SOA Square RBSOA

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Prcess Technlgy Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize advanced prcessing

More information

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity

More information

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

P-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

More information

AUIRFS4115 AUIRFSL4115

AUIRFS4115 AUIRFSL4115 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE

More information

Si4410DY. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω. N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive

Si4410DY. HEXFET Power MOSFET V DSS = 30V. R DS(on) = Ω. N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive P - 91853C Si44Y HEXFET Power MOSFET N-Channe MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Leve rive S S S G 1 8 2 7 3 6 4 5 V SS = 30V R S(on) = 0.0135Ω escription This N-channe HEXFET

More information

IRG7PH35UDPbF IRG7PH35UD-EP

IRG7PH35UDPbF IRG7PH35UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA % of the parts tested for I LM Positive V CE (ON) temperature

More information

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF IRG7PH3UDMPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low V CE (ON) trench IGBT Technology Low Switching Losses Square

More information

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f

V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized

More information

Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C P- 93758B IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated G 2 3 4 6 5 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs

More information

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT

IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT PD- 95899A IRGPS4B12UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features Non Punch Through IGBT Technology. 1µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

More information

30V GS = 10V 6.2nC

30V GS = 10V 6.2nC pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)

More information

IRF5800. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.085Ω

IRF5800. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.085Ω P - 93850 IRF5800 HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Low Gate Charge G 2 6 5 3 4 S V SS = -30V R S(on) = 0.085Ω escription These P-channe MOSFETs

More information

IRL2703 PD A. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.04Ω I D = 24A

IRL2703 PD A. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.04Ω I D = 24A Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced

More information

IRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS

IRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS P 964 dvanced Process Technoogy Utra Low On-Resistance N Channe MOFET urface Mount vaiabe in Tape & Ree 50 C Operating Temperature utomotive [Q0] Quaified Lead-Free escription pecificay designed for utomotive

More information

IRG7PH42UDPbF IRG7PH42UD-EP

IRG7PH42UDPbF IRG7PH42UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) temperature

More information

PolarHT TM HiPerFET Power MOSFET

PolarHT TM HiPerFET Power MOSFET PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Avaanche Rated Fast Intrinsic Diode = 15 V I D25 = 15 A R DS(on) 11 mω t rr ns Symbo Test Conditions Maximum Ratings = 25 C to 175 C 15 V V DGR

More information

N- & P-Channel Enhancement Mode Field Effect Transistor

N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel

More information

SMPS MOSFET. V DSS R DS(on) max(mw) I D

SMPS MOSFET. V DSS R DS(on) max(mw) I D P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor

More information

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units. "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 30-V (D-S) MOSFET With Sense Terminal SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New

More information

IRGB4055PbF IRGS4055PbF

IRGB4055PbF IRGS4055PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High

More information

Absolute Maximum Ratings

Absolute Maximum Ratings IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy

More information

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J

SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J M MOFE D - 4444 Applications l witch Mode ower upply M) l ninterruptible ower upply l igh peed ower witching EXFE ower MOFE V D R Don) typ. I D 500V 20mΩ.A Benefits l Low ate Charge Qg results in imple

More information

IXFN140N30P. Polar TM Power MOSFET HiPerFET TM = 300V = 110A V DSS I D ns. t rr. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXFN140N30P. Polar TM Power MOSFET HiPerFET TM = 300V = 110A V DSS I D ns. t rr. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Polar TM Power MOSFET HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S I D25 R DS(on) t rr = 3V = 11A 24mΩ ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V

More information

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA 1% of the parts tested for I LM Positive V CE (ON)

More information

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units

ECONO2 PIM. Parameter Symbol Test Conditions Ratings Units. Parameter Symbol Min Typical Maximum Units IGBT PIM MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

More information

Advance Technical Information IXFN80N60P3 V DSS. High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T J

Advance Technical Information IXFN80N60P3 V DSS. High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T J Advance Technical Information Polar3 TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN8N6P3 S = I D25 = 66A R DS(on) 7mΩ t rr 25ns minibloc E53432 G S Symbol Test Conditions

More information

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) LogicLeve Gate rive dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa

More information

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units

ECONO2 6PACK. Parameter Max. Units. Parameter Min Typical Maximum Units Bulletin I27279 /6 GBXF2K IGBT SIXPACK MODULE Features Low V CE (on) Non Punch Through IGBT Technology Low Diode V F μs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

IXFK120N30T IXFX120N30T

IXFK120N30T IXFX120N30T GigaMOS TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Advance Technical Information IXFK12N3T IXFX12N3T S = 3V I D25 = 12A R DS(on) 24mΩ t rr 2ns TO-264 (IXFK) Symbol

More information