DACO SEMICONDUCTOR CO., LTD.
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- Marcia Parsons
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1 Silicon Carbide Enhancement Mode MOSFET Features V SS = 12V Preliminary SOT227 S R S(ON) < 34 GS Fully valanche Rated Pb Free & RoHS Compliant S G Isolation Type Package Electrically Isolation base plate pplications Solar Inverters Switch Mode Power Supplies Power Converters Motor rive Battery Chargers bsolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Ratings Unit rainsource Voltage V S 12 V GateSource Voltage V GS 1/+2 TC =25 C rain T = C C rain C =25 C Note1 I M 2 Maximum Power issipation P 46 W Storage Temperature Range T STG to +1 C Operating Junction Temperature Range TJ to +1 C Thermal Resistance, JunctiontoCase R JC.26 C/W Isolation Voltage (.C. 1 minute) Viso 2 V Mounting torque (M4 Screw) M d 1.3 N m I IM B C E F G H I J K L M N O P Q IMENSIONS INCHES MM MIN MX MIN MX R M4*
2 Electrical TJ =25 C (unless otherwise specified) OFF Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit rainsource Breakdown Voltage BV SS V GS=VI S =.3m 12 V Zero Gate Voltage rain Current I SS V GS=VV S =12V u GateBody Leakage IGSS V GS=2V V S =V n ON Characteristics Gate Threshold Voltage V TH V S =V GSI S =8m V rainsource OnState Resistance R S(on) V GS=2VI S = Gate Resistance R G Forward Transconductance g V S >2I R S(on)M fs 21 S I = ynamic Characteristics Input Capacitance Ciss V S =V Note1 Output Capacitance Coss V GS=V 184 pf Reverse Transfer Capacitance C rss Freq.=1MHz 4 TurnOn Switching Energy TurnOff Switching Energy E on E off V =V V GS=5V/+2V I = R G(ext) =6.8 Load =412μH mj Switching Characteristics TurnOn elay Time td(on) V =V Rise Time t r V 29 GS=2V TurnOff elay Time Fall Time t d(off) t f I S = R G= ns Total Gate Charge at 1V Q g V S =V 196 Gate to Source Charge Q gs V GS=2V 24 nc Gate to rain Charge Q gd I S = 48 Reverse iode Characteristics rainsource iode Forward Voltage V F T J =25 CI F= 6.5 V iode Continuous Forward Current I F iode Pulsed Current Note1 I F,pulse 2 Reverse Recovery time T RR IF=.5VI R=1. IRR =.25 ns Notes: 1. Pulse Test: Pulse Width s, uty Cycle > 2%.
3 Figure 1. Maximum Power issipation (MOSFET) erating vs. Case Temperature Maximum issipated Power, P tot (W) Case Temperature, T C ( C) Figure 3. Safe Operating rea (MOSFET) Condions: T J 1 C Figure 2. Continous rain Current (MOSFET) erating vs Case Temperature rainsource Connous Current, I S (C) () Condions: T J 1 C Case Temperature, T C ( C) Figure 4. MOSFET Junction to Case Thermal Impedance rainsource Current, I S () Limited by R S On.1 Condions: T C = 25 C =, Parameter: t p rainsource Voltage, V S (V) C 1 ms ms μs 1 μs Juncon To Case Impedance, Z thjc ( o C/W).5 E E E3 SinglePulse E6 1E6 1E6 E6 1E3 1E3 E3 1 Time, t p (s) Figure 5. Output Characteristics T J = 25 C rainsource Current, I S () Condions: tp < 2 μs V GS = 16 V V GS = 18 V V GS = 2 V V GS = 14 V V GS = 12 V V GS = 1 V Figure 6. OnResistance vs. rain Current For Various Temperatures On Resistance, R S On (mohms) Condions: V GS = 2 V t p < 2 μs T J = 1 C T J =25 C T J = 55 C rainsource Voltage, V S (V) rainsource Current, I S ()
4 mp () mp() Figure 7. OnResistance vs. Temperature For Various GateSource Voltage 6 Coions: S = t p < 2 μs Figure 8. Threshold Voltage vs. Temperature Coions V S = V GS S = 15 m On Resistane, R S On (mohms) V GS = 18 V V GS = 2 V V GS = 16 V V GS = 14 V Thshol Voltage, V th (V) Jnon Tempeate, T J ( C) Figure 9. Transfer Characteristic for Various Junction Temperatures Jon Tempeate T J ( C) Figure 1. Capacitances vs. rainsource Voltage ( 1 kv) ainsoe Cent, S () Coions: V S = 2 V tp < 2 μs T J = 1 C T J = 55 C Capaitane (pf) 1 C ss C oss C iss Coions: V C = 25 mv f = 1 MHz GateSoe Voltage, V GS (V) ainsoe Voltage, V S (V) Figure 11. Typical forward characteristics of reverse diode T = 25 C J Figure Forward derating curve of reverse diode Volts (V) 16 Single Phase,Half Wave TC ( C)
5 mp() Figure 13. Peak forward surge current of reverse diode ms Single Half Sine Wave JEEC method T J = 25 C Figure 14. Typical reverse diode characteristics 1 1 Instantaneous reverse leakage current (u) 1. T = 125 C J.1 T = 25 C J Cycles Number Of Cycles t 6Hz Volts (%) Figure 15. Gate Charge Characteristics Figure 16. Inductive Switching Energy vs. Temperature GateSource Voltage, V GS (V) Condions: I S = I GS = m V S = V Swithcing Loss (mj) Condions: I S = V = V R G(ext) = 6.8 V GS = 5/+2 V L = 412 μh E Total E On E O Gate Charge, Q G (nc) Juncon Temperature, T J ( C) Figure 17. Timing vs. R G(ext) Figure 18. Resistive Switching Time escription 9 7 Condions: V = V R L = 16 V GS = 5/+2 V t d (o) t r 6 t f Time (ns) 4 t d (on) External Gate Resistor, R G(ext) (Ohms)
DACO SEMICONDUCTOR CO., LTD.
Nhannel Enhancement Mode MOSFET Features V SS = 9V Preliminary SOT227 S R S(ON) < 2 S Fully valanche Rated Pb Free & RoHS ompliant S solation Type Package Electrically solation base plate pplications P
V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Symbol
3V NChannel AlphaMOS General escription Latest Trench Power AlphaMOS (αmos LV) technology Very Low RS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06CS
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVSS RSON (MX.) I 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
SMPS MOSFET. V DSS R DS(on) max(mw) I D
P- 9330F SMPS MOSFET IRF743 HEXFET Power MOSFET pplications l High frequency C-C converters V SS R S(on) max(mw) I 30V @V GS = V 2 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
Package TO Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 40 V GS = 20 V, T C = 100 C.
V DS 2 V C2M42D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 6 A 4 mω High Blocking Voltage with Low On-Resistance High Speed Switching
SMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
pplications Reset Switch for ctive Clamp Reset C-C converters Lead-Free l l SMPS MOSFET P - 95293 IRF626PbF HEXFET Power MOSFET V SS R S(on) max I -50V 0.240W@V GS =-V -2.2 Benefits l Low Gate to rain
30V GS = 10V 6.2nC
pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
Package TO Symbol Parameter Value Unit Test Conditions Note. V GS =20 V, T C = 25 C Fig. 19 A 60 V GS =20 V, T C = 100 C.
V DS 2 V C2M252D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 9 A 25 mω High Blocking Voltage with Low On-Resistance High Speed
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 20 V, T C = 25 C Fig. 19 A 24 V GS = 20 V, T C = 100 C.
V DS 12 V C2M812D Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 25 C R DS(on) 36 A 8 mω High Blocking Voltage with Low On-Resistance High Speed
V DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
SMPS MOSFET. V DSS R DS(on) max(mw) I D
P - 95308 SMPS MOSFET IRF7460PbF pplications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor
Package. Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Part Number Package Marking
C3M659D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 36 A 65 mω C3M SiC MOSFET technology High blocking voltage with low
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 15 V GS = 15 V, T C = 100 C.
C3M129D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 9 V 23 A 12 mω C3M SiC MOSFET technology High blocking voltage with low On-resistance
V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
V DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
Package. Symbol Parameter Value Unit Test Conditions Note V GS = 15 V, T C = 25 C Fig. 19 A 7.5 V GS = 15 V, T C = 100 C.
C3M29D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 11.5 A 2 mω C3M SiC MOSFET technology High blocking voltage with low
Package. Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 40 V GS = 15 V, T C = 100 C.
C3M39K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 9 V 63 A 3 mω C3M TM SiC MOSFET technology Optimized package with separate
V DS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -6V) 100% UIS Tested 100% R g Tested. Symbol V V GS. Gate-Source Voltage I DM I D A A
AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery
Package. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 19.7 V GS = 15 V, T C = 100 C.
C3M7512K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 12 V 3 A 75 mω C3M TM SiC MOSFET technology Optimized package with separate
CCS050M12CM2 1.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 25mΩ All-Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
Power MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50
Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting
Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing
Maximum Ratings, att j = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current. IDpulse 88 E AS 90.
SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5
Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22.5 V GS = 15 V, T C = 100 C.
C3M651J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 1 V 35 A 65 mω C3M TM SiC MOSFET technology Low parasitic inductance with
V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
SMPS MOSFET. V DSS R DS(on) max (mω)
P- 94094A SMPS MOSFET IRF7477 Applications l High Frequency Synchronous Buck Converters for Computers and Communications Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche
Package TO Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 6 V GS = 20 V, T C = 100 C.
V DS 1 V CM1D Silicon Carbide Power MOSFET CM TM MOSFET Technology N-Channel Enhancement Mode Features Package I D @ 5 C R DS(on) 1 A mω High Blocking Voltage with Low On-Resistance High Speed Switching
AONR V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Advanced Trench Technology Low R DS(ON) High Current Capability RoHS and HalogenFree Compliant Product Summary V DS 3V I D (at V GS =V) A R DS(ON) (at V GS
V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D
AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
3V NChannel MOSFET General Description Trench Power MOSFET technology Very Low R DS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V
AOD4184A 40V N-Channel MOSFET
4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. G Pin 1
AON74B 3V NChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
IXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified
Advance Technical Information X2-Class HiPerFET TM Power MOSFET AEC Q Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode IXFH42N5X2A V SS = 5V I 25 = 42A 72m R S(on) TO-247 Symbol
IXTT16N10D2 IXTH16N10D2
epletion Mode MOSFET N-Channel V SX = V I (on) > 16A R S(on) 6m G TO-268 (IXTT) S G S (Tab) Symbol Test Conditions Maximum Ratings V SX = C to 17 C V V GX = C to 17 C, R GS = 1M V X Continuous 2 V M Transient
Package. TAB Drain S S G. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 13.5 V GS = 15 V, T C = 100 C
C3M121K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ C R DS(on) 1 V 22 A 12 mω C3M TM SiC MOSFET technology Optimized package with separate
AOD466 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
Product Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
Over current protection circuits Voltage controlled DC-AC inverters Maximum operating temperature of 175 C
Description United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low
CAS120M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode
Datasheet: CAS12M12BM2,Rev. - CAS12M12BM2 1.2kV, 13 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode V DS E sw, Total @ 12A, 15 C R DS(on) 1.2 kv 2.1 mj 13 mω Features Ultra Low Loss
AON6266E 60V N-Channel AlphaSGT TM
6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Level Gate Drive ESD Protected Excellent Gate Charge x R DS(ON) Product (FOM) RoHS and HalogenFree Compliant
N-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
AON V Common-Drain Dual N-Channel MOSFET
2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree
AON V Channel AlphaSGT TM
AON6 V Channel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Logic Driven RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R
CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode
CCS5M2CM2.2kV, 5A Silicon Carbide Six-Pack (Three Phase) Module Z-FET TM MOSFET and Z-Rec TM Diode Features Ultra Low Loss Zero Reverse Recovery Current Zero Turn-off Tail Current High-Frequency Operation
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol V
AON7 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at 4.V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
IXFT150N30X3HV IXFH150N30X3 IXFK150N30X3
Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 V SS I 25 R S(on) = 3V = 5A 8.3m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum
IXFK300N20X3 IXFX300N20X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK3N2X3 IXFX3N2X3 V SS I 25 R S(on) = 2V = 3A 4m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum
LSIC1MO120E V N-channel, Enhancement-mode SiC MOSFET
LSIC1MO12E8, 12 V, 8 mohm, TO-247-3L LSIC1MO12E8 12 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics Value Unit V DS 12 V Typical R DS(ON) 8 mω I D ( T C 1 C) 25 A Circuit
Product Summary Drain source voltage. Pin 1 Pin2/4 PIN 3 G D S
SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V
AON V N-Channel SRFET
AON679 3V NChannel SRFET General Description Trench Power αmos Technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON)
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. DFN 3.3x3.3 EP D. Top View
AON78 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
IXFK240N25X3 IXFX240N25X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK24N25X3 IXFX24N25X3 V SS I 25 R S(on) = 25V = 24A 5.m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-264 (IXFK)
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View. Symbol Drain-Source Voltage 30 Gate-Source Voltage V GS
AON65 3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at.5v GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested G G S G
AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized
V DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead 20 C/W Junction-to-Ambient 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET
TO-247-3L Inner Circuit Product Summary I C) R DS(on)
Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested. Top View. Pin 1
AON7556 3V NChannel AlphaMOS General Description Trench Power AlphaMOS (αmos LV) technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D
IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3
Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT7N25X3HV IXFH7N25X3 IXFK7N25X3 V SS I 25 R S(on) = 25V = 7A 7.4m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode Symbol
MOSFET IRF7855 (KRF7855)
M Type Features OP-8 V (V) = V I = 2 (VG = V) R(ON) < 9.4mΩ (VG = V) 8.5.5 G 2 7 3 4 5.2 +.4 -.2 ource 2 ource 3 ource 4 Gate 5 rain rain 7 rain 8 rain bsolute Maximum Ratings Ta = 25 Parameter ymbol Rating
Product Summary: BVDSS RDSON (MAX.) D 60V 60mΩ 12A I D. UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free EMB60N06C
N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MX.) ID D 6V 6mΩ G UIS, Rg % Tested Pb Free Lead Plating & Halogen Free S BSOLUTE MXIMUM RTINGS (T C = 5 C Unless
Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C
Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low
CAS300M12BM2 1.2kV, 5.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS3M12BM2 1.2kV, 5. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A R DS(on) 1.2 kv 12. mj 5. mω Features Ultra Low Loss High-Frequency Operation Zero Reverse
CAS300M17BM2 1.7kV, 8.0 mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
Datasheet: CAS3M17BM2,Rev. A CAS3M17BM2 1.7kV, 8. mω All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode V DS E sw, Total @ 3A, 1 C R DS(on) 1.7 kv 23 mj 8. mω Features Ultra Low Loss
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. Top View. Top View G PIN1
3V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS(ON) at.5v V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
N-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
TrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated V DSS I D25 R DS(on) TO-263 (IXTA) = V = A 7mΩ Symbol Test Conditions Maximum Ratings V DSS T J = 25
IXFR230N20T V DSS. GigaMOS TM Power MOSFET = 200V = 156A. 8.0m t rr. 200ns. (Electrically Isolated Tab)
GigaMOS TM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR23N2T V DSS = 2V I D25 = 156A R DS(on) 8.m t rr 2ns ISOPLUS247 E153432 Symbol Test
FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS = 20 V, T C = 25 C A 46 V GS = 20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-4B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 63 A 4 mω Features Chip Outline C2M SiC MOSFET technlogy High Blocking Voltage
Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V
General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,
AOP605 Complementary Enhancement Mode Field Effect Transistor
AOP65 Complementary Enhancement Mode Field Effect Transistor General Description The AOP65/L uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETs form a highspeed
AON V N-Channel MOSFET
AON66 V NChannel MOSFET General Description The AON66 utilize advanced trench MOSFET technology in small DFN. x.6 package. This device is ideal for load switch applications. Product Summary V DS V I D
N-Channel 30-V (D-S) MOSFET With Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET With Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A).3 @ V S = V 5 a 3.7 @ V S =.5 V a FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode New
TrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
Advance Technical Information IXFN80N60P3 V DSS. High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T J
Advance Technical Information Polar3 TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN8N6P3 S = I D25 = 66A R DS(on) 7mΩ t rr 25ns minibloc E53432 G S Symbol Test Conditions
IXFN140N30P. Polar TM Power MOSFET HiPerFET TM = 300V = 110A V DSS I D ns. t rr. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Polar TM Power MOSFET HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S I D25 R DS(on) t rr = 3V = 11A 24mΩ ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V
PRELIMINARY TO-247. Conditions. T j = 100 C T j = 150 C T C = 25 C AC (2) 1/8" from case < 10 s. Symbol. R th JC R th JA
NormallyOFF Trench Power JFET Features: Compatible with Standard Gate Driver ICs Positive Temperature Coefficient for Ease of Paralleling Extremely Fast Switching with No "Tail" Current at 15 C 15 C Maximum
P-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
IXFA270N06T3 IXFP270N06T3 IXFH270N06T3
TrenchT3 TM HiperFET TM Power MOSFET Advance Technical Information IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 V SS I 25 R S(on) = 6V = 27A 3.1m N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier
PRELIMINARY TO-247. S(3) - Power Factor Correction Internal Schematic - Induction Heating - UPS - Motor Drive. Conditions. T j = 125 C T C = 25 C
NormallyOFF Trench Power JFET Features: Compatible with Standard Gate Driver ICs Positive Temperature Coefficient for Ease of Paralleling Temperature Independent Switching Behavior 175 C Maximum Operating
KF5N50PR/FR/PS/FS N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR TECHNICAL DATA. General Description
EMICOUCTOR TECHIC T KF55PR/FR/P/F CHE MO FIE EFFECT TRITOR eneral escription KF55PR, KF55P This planar stripe MOFET has better characteristics, such as fast switching time, fast reverse recovery time,
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 SPDN6S5 Cool MOS Power Transistor V DS 6 V Feature R DS(on). Ω New revolutionary high voltage technology I D. A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective
N-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View
AON8 3 NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos L) technology ery Low RDS(on) at. GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary
AO V Dual N-Channel MOSFET
AO688 V Dual NChannel MOSFET General Description The AO688 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is suitable
AON7404G 20V N-Channel MOSFET
AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A
Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C
SPUN6S5 Cool MOS Power Transistor V DS 6 V Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
Chip Outline. Symbol Parameter Value Unit Test Conditions Note V GS =20 V, T C = 25 C A 71 V GS =20 V, T C = 100 C. -40 to +175
V DS 12 V CPM2-12-25B Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode I D @ 25 C R DS(on) 98 A 25 mω Features Chip Outline High Blocking Voltage with Low On-Resistance
AOV11S60. V T j,max 700V 45A. The AOV11S60 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver
AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness
P-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
1.2 kv 16 mω 1.8 mj. Package. Symbol Parameter Value Unit Test Conditions Notes 117 V GS = 20V, T C
CAS1H12AM1 1.2 kv, 1A Silicon Carbide Half-Bridge Module Z-FET TM MOSFET and Z-Rec TM Diode Not recommended for new designs. Replacement part: CAS12M12BM2 Features Ultra Low Loss Zero Turn-off Tail Current
IXTY18P10T IXTA18P10T IXTP18P10T
TrenchP TM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY18P1T IXTA18P1T IXTP18P1T V DSS = - 1V I D = - 18A R DS(on) 12m TO52 (IXTY) G S Symbol Test Conditions Maximum Ratings V DSS = C to
IXTT440N04T4HV V DSS
Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS