Power MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50

Transcription

1 Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting Hole Fast witching Ease of Paralleling imple rive Requirements Compliant to RoH irective 2002/95/EC TO27C G G NChannel MOFET ECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO27C package is preferred for commercialindustrial applications where higher power levels preclude the use of TO220B devices. The TO27C is similar but superior to the earlier TO218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. ORERING INFORMTION Package Lead (Pb)free npb TO27C IRFPE50PbF ihfpe50e3 IRFPE50 ihfpe50 BOLUTE MXIMUM RTING (T C = 25 C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT rainource Voltage V 800 Gateource Voltage V G ± 20 V Continuous rain Current V G at 10 V T C = 25 C 7.8 I T C = 100 C.9 Pulsed rain Current a I M 31 Linear erating Factor 1.5 W/ C ingle Pulse valanche Energy b E 770 mj Repetitive valanche Current a I R 7.8 Repetitive valanche Energy a E R 19 mj Maximum Power issipation T C = 25 C P 190 W Peak iode Recovery dv/dt c dv/dt 2.0 V/ns Operating Junction and torage Temperature Range T J, T stg 55 to 150 oldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw 10 lbf in 1.1 N m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T J = 25 C, L = 23 mh, R g = 25 Ω, I = 7.8 (see fig. 12). c. I 7.8, di/dt 10 /μs, V 600 V, T J 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply 1102Rev. B, 1Mar11 1

2 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 0 Casetoink, Flat, Greased urface R thc 0.2 C/W Maximum JunctiontoCase (rain) R thjc 0.65 PECIFICTION (T J = 25 C, unless otherwise noted) PRMETER YMBOL TET CONITION MIN. TYP. MX. UNIT tatic rainource Breakdown Voltage V V G = 0 V, I = 250 μ 800 V V Temperature Coefficient ΔV /T J Reference to 25 C, I = 1 m 0.98 V/ C Gateource Threshold Voltage V G(th) V = V G, I = 250 μ V Gateource Leakage I G V G = ± 20 V ± 100 n V = 800 V, V G = 0 V 100 Zero Gate Voltage rain Current I V = 60 V, V G = 0 V, T J = 125 C 500 μ rainource Ontate Resistance R (on) V G = 10 V I =.7 b 1.2 Ω Forward Transconductance g fs V = 100 V, I =.7 b 5.6 ynamic Input Capacitance C iss V G = 0 V, 3100 Output Capacitance C oss V = 25 V, 800 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 200 Gateource Charge Q gs I V G = 10 V = 7.8, V = 00 V, see fig. 6 and 13 b 2 nc Gaterain Charge Q gd 110 TurnOn elay Time t d(on) 19 Rise Time t r V = 00 V, I = 7.8, 38 TurnOff elay Time t d(off) R g = 6.2 Ω, R = 52 Ω see fig. 10 b 120 ns Fall Time t f 39 Internal rain Inductance L Between lead, mm (0.25") from package and center of G Internal ource Inductance L die contact 13 nh rainource Body iode Characteristics Continuous ourcerain iode Current I MOFET symbol 7.8 showing the integral reverse G Pulsed iode Forward Current a I M p n junction diode 31 Body iode Voltage V T J = 25 C, I = 7.8, V G = 0 V b 1.8 V Body iode Reverse Recovery Time t rr TJ = 25 C, I F = 7.8, ns Body iode Reverse Recovery Charge Q rr di/dt = 100 /μs b μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 % Rev. B, 1Mar11

3 TYPICL CHRCTERITIC (25 C, unless otherwise noted) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics Fig. 2 Typical Output Characteristics, T C = 150 C Fig. Normalized OnResistance vs. Temperature 1102Rev. B, 1Mar11 3

4 Fig. 5 Typical Capacitance vs. raintoource Voltage Fig. 7 Typical ourcerain iode Forward Voltage Fig. 6 Typical Gate Charge vs. Gatetoource Voltage Fig. 8 Maximum afe Operating rea 1102Rev. B, 1Mar11

5 V R R G V G.U.T. V 10 V Pulse width 1 µs uty factor 0.1 % Fig. 10a witching Time Test Circuit V 90 % 10 % V G t d(on) t r t d(off) t f Fig. 9 Maximum rain Current vs. Case Temperature Fig. 10b witching Time Waveforms Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase 1102Rev. B, 1Mar11 5

6 L Vary t p to obtain required I R G V I.U.T V V t p V V 10 V t p 0.01 Ω I Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms Fig. 12c Maximum valanche Energy vs. rain Current Current regulator ame type as.u.t. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q G Q G.U.T. V V G V G Charge 3 m Fig. 13a Basic Gate Charge Waveform Fig. 13b Gate Charge Test Circuit I G I Current sampling resistors Rev. B, 1Mar11

7 Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g river same type as.u.t. I controlled by duty factor.u.t. device under test V river gate drive P.W. Period = P.W. Period V G = 10 V a.u.t. l waveform Reverse recovery current Body diode forward current di/dt.u.t. V waveform iode recovery dv/dt V Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I Note a. V G = 5 V for logic level devices Fig. 1 For NChannel 1102Rev. B, 1Mar11 7

8 Package Information TO27C (High Voltage) 3 B R/2 Q E E/2 2 7 ØP (atum B) Ø k M B M ØP1 2 2 x R (2) Thermal pad 5 L1 C 2 x b2 3 x b 0.10 M C M b Lead ssignments 1. Gate 2. rain 3. ource. rain 2 x e L ee view B C 1 E (b, b2, b) () View B ection C C,, E E MILLIMETER INCHE MILLIMETER INCHE IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E E b e 5.6 BC BC b Ø k b L b L b N 7.62 BC BC b Ø P c Ø P c Q R BC BC ECN: X130103Rev., 01Jul13 WG: 5971 Notes 1. imensioning and tolerancing per ME Y1.5M Contour of slot optional. 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions 1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.15"). 7. Outline conforms to JEEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E C C Planting (c) E M B M View (b1, b3, b5) Base metal c1 Revision: 01Jul13