E Series Power MOSFET

Transcription

1 E Series Power MOSFET SiHG7N6E PROUCT SUMMRY (V) at T J max. 65 R S(on) max. at 25 C () V GS = 1 V.6 Q g max. (nc) 22 Q gs (nc) 36 Q gd (nc) 6 Configuration Single FETURES Low FigureofMerit (FOM) R on x Q g Low Input Capacitance (C iss ) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Q g ) vailable valanche Energy Rated (UIS) Material categorization: For definitions of compliance please see TO27C S G G S NChannel MOSFET PPLICTIONS Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting HighIntensity ischarge (HI) Fluorescent Ballast Lighting Industrial Welding Induction Heating Motor rives Battery Chargers Renewable Energy Solar (PV Inverters) ORERING INFORMTION Package Lead (Pb)free Lead (Pb)free and Halogenfree TO27C SiHG7N6EE3 SiHG7N6EGE3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT rainsource Voltage 6 GateSource Voltage ± 2 V V GS GateSource Voltage C (f > 1 Hz) 3 Continuous rain Current (T J = 15 C) V GS at 1 V T C = 25 C 7 I T C = 1 C 3 Pulsed rain Current a I M 15 Linear erating Factor 3 W/ C Single Pulse valanche Energy b E S 18 mj Maximum Power issipation P 357 W Operating Junction and Storage Temperature Range T J, T stg 55 to 15 C rainsource Voltage Slope T J = 125 C 37 dv/dt Reverse iode dv/dt d 11 V/ns Soldering Recommendations (Peak Temperature) c for 1 s 3 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V = 5 V, starting T J = 25 C, L = 73.5 mh, R g = 25, I S = 7. c. 1.6 mm from case. d. I S I, di/dt = 1 /μs, starting T J = 25 C. S13237Rev. G, 18Nov13 1 ocument Number: 917

2 SiHG7N6E THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj C/W Maximum JunctiontoCase (rain) R thjc.33 SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONITIONS MIN. TYP. MX. UNIT Static rainsource Breakdown Voltage V GS = V, I = 25 μ 6 V Temperature Coefficient /T J Reference to 25 C, I = 25 μ.66 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I = 25 μ V GateSource Leakage I GSS V GS = ± 2 V ± 1 n = 6 V, V GS = V 1 Zero Gate Voltage rain Current I SS = 8 V, V GS = V, T J = 15 C 1 μ rainsource OnState Resistance R S(on) V GS = 1 V I = Forward Transconductance g fs = 8 V, I = S ynamic Input Capacitance C iss VGS = V, 81 Output Capacitance C oss = 1 V, 23 Reverse Transfer Capacitance C rss f = 1 MHz 5 Effective Output Capacitance, Energy pf Related a C o(er) 17 = V to 8 V, V GS = V Effective Output Capacitance, Time Related b C o(tr) 6 Total Gate Charge Q g GateSource Charge Q gs V GS = 1 V I = 2, = 8 V 36 nc Gaterain Charge Q gd 6 TurnOn elay Time t d(on) 2 5 Rise Time t r V = 8 V, I = 2, TurnOff elay Time t d(off) V GS = 1 V, R g =. 9 1 ns Fall Time t f Gate Input Resistance R g f = 1 MHz, open drain.65 rainsource Body iode Characteristics MOSFET symbol Continuous Sourcerain iode Current I S 7 showing the integral reverse G Pulsed iode Forward Current I SM S p n junction diode 1 iode Forward Voltage V S T J = 25 C, I S = 2, V GS = V 1.2 V Body iode Reverse Recovery Time t rr 696 ns Body iode Reverse Recovery Charge Q rr T J = 25 C, I F = I S = 2, di/dt = 1 /μs, V R = 25 V 16 μc Reverse Recovery Current I RRM 39 Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % S. b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 % S. S13237Rev. G, 18Nov13 2 ocument Number: 917

3 SiHG7N6E TYPICL CHRCTERISTICS (25 C, unless otherwise noted) I, raintosource Current () Top 15 V 1 V 13 V 12 V 11 V 1 V 9. V 8. V 7. V 6. V Bottom 5. V 2 5. V T J = 25 C , raintosource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 25 C R S(on), raintosource OnResistance (Normalized) I = 2. V GS = 1 V T J, Junction Temperature ( C) Fig. Normalized OnResistance vs. Temperature I, raintosource Current () Top 15 V 1 V 13 V 12 V 11 V 1 V 9. V 8. V 7. V 6. V Bottom 5. V 1 1 C, Capacitance (pf) C rss C iss C oss V GS = V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd T J = 15 C , raintosource Voltage (V) , raintosource Voltage (V) Fig. 2 Typical Output Characteristics, T C = 15 C Fig. 5 Typical Capacitance vs. raintosource Voltage I, raintosource Current () T = 15 C J 2 T J= 25 C V GS, GatetoSource Voltage (V) C oss (pf) 25 2 C oss E oss E oss (μj) Fig. 3 Typical Transfer Characteristics Fig. 6 C oss and E oss vs. S13237Rev. G, 18Nov13 3 ocument Number: 917

4 SiHG7N6E V GS, GatetoSource Voltage (V) = 8 V = 3 V = 12 V I, rain Current () Q g, Total Gate Charge (nc) T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. 1 Maximum rain Current vs. Case Temperature I S, Reverse rain Current () T = 15 C J T = 25 C J V GS = V V S, Sourcerain Voltage (V), raintosource Breakdown Voltage (V) T J, Junction Temperature ( C) Fig. 8 Typical Sourcerain iode Forward Voltage Fig. 11 Temperature vs. raintosource Voltage 1 1 Operation in this area limited by R S(on) * I M Limited I, rain Current () 1 1 T C = 25 C T J = 15 C Single Pulse 1 µs 1 ms 1 ms BVSS Limited , raintosource Voltage (V) * V GS > minimum V GS at which R S(on) is specified Fig. 9 Maximum Safe Operating rea S13237Rev. G, 18Nov13 ocument Number: 917

5 SiHG7N6E 1 Normalized Effective Transient Thermal Impedance.1 uty Cycle = Single Pulse Pulse Time (s) Fig. 12 Normalized Thermal Transient Impedance, JunctiontoCase R t p V GS.U.T. V R G V 1 V Pulse width 1 µs uty factor.1 % I S Fig. 13 Switching Time Test Circuit Fig. 16 Unclamped Inductive Waveforms 9 % 1 V Q G Q GS Q G 1 % V GS t d(on) t r t d(off) t f V G Fig. 1 Switching Time Waveforms Charge Fig. 17 Basic Gate Charge Waveform Vary t p to obtain required I S L Current regulator Same type as.u.t. 5 kω R G 1 V t p I S.U.T.1 Ω V 12 V V GS.2 µf.3 µf.u.t. V S 3 m Fig. 15 Unclamped Inductive Test Circuit Fig. 18 Gate Charge Test Circuit I G I Current sampling resistors S13237Rev. G, 18Nov13 5 ocument Number: 917

6 SiHG7N6E Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g river same type as.u.t. I S controlled by duty factor.u.t. device under test V river gate drive P.W. Period = P.W. Period V GS = 1 V a.u.t. l S waveform Reverse recovery current Body diode forward current di/dt.u.t. waveform iode recovery dv/dt V Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I S Note a. V GS = 5 V for logic level devices Fig. 19 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S13237Rev. G, 18Nov13 6 ocument Number: 917

7 TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (atum B) Ø k M B M ØP1 2 2 x R (2) Thermal pad 5 L1 C 2 x b2 3 x b.1 M C M b Lead ssignments 1. Gate 2. rain 3. Source. rain 2 x e L See view B 1 C E (b, b2, b) () Section C C,, E E MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E E b e 5.6 BSC.215 BSC b Ø k.25.1 b L b L b N 7.62 BSC.3 BSC b Ø P c Ø P c Q R S 5.51 BSC.217 BSC ECN: X1313Rev., 1Jul13 WG: 5971 Notes 1. imensioning and tolerancing per SME Y1.5M Contour of slot optional. 3. imension and E do not include mold flash. Mold flash shall not exceed.127 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions 1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (.15"). 7. Outline conforms to JEEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E1.1 M B M View (b1, b3, b5) Base metal c1 Revision: 1Jul13 1 ocument Number: 9136

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