N-Channel 20-V (D-S) Fast Switching MOSFET
|
|
- Emery Shields
- 5 years ago
- Views:
Transcription
1 N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) at V G = V..78 at V G = 4.5 V 7.4 PowerPAK mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information: i7n-t-e3 (Lead (Pb)-free) i7n-t-ge3 (Lead (Pb)-free and Halogen-free) FEATURE Halogen-free Option Available TrenchFET Gen II Power MOFET New Low Thermal Resistance PowerPAK Package with Low.7 mm Profile PWM Optimized % R g Tested APPLICATION ynchronous Rectification ynchronous Buck G N-Channel MOFET RoH COMPLIANT ABOLUTE MAXIMUM RATING T A = 5 C, unless otherwise noted Parameter ymbol s teady tate Unit rain-ource Voltage V Gate-ource Voltage V G ± V Continuous rain Current (T J = 5 C) a T A = 5 C. 3.5 I T A = 7 C Pulsed rain Current I M 6 A Continuous ource Current (iode Conduction) a I 3..3 ingle Avalanche Current I A 35 L = mh ingle Avalanche Energy E A 6 mj T A = 5 C Maximum Power issipation a P T A = 7 C..8 W Operating Junction and torage Temperature Range T J, T stg - 55 to 5 oldering Recommendations (Peak Temperature) b, c 6 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a t s 4 33 R thja teady tate 65 8 C/W Maximum Junction-to-Case (rain) teady tate R thjc.9.4 Notes: a. urface Mounted on " x " FR4 board. b. ee older Profile ( The PowerPAK -8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ocument Number: Rev. E, 7-Mar-8
2 i7n MOFET PECIFICATION T J = 5 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic Gate Threshold Voltage V G(th) V = V G, I = 5 µa.5.5 V Gate-Body Leakage I G V = V, V G = ± V ± na V = V, V G = V Zero Gate Voltage rain Current I V = V, V G = V, T J = 55 C 5 µa On-tate rain Current a I (on) V 5 V, V G = V 4 A V G = V, I =. A rain-ource On-tate Resistance a R (on) V G = 4.5 V, I = 7.4 A Ω Forward Transconductance a g fs V = 5 V, I =. A 7 iode Forward Voltage a V I = 3. A, V G = V.8. V ynamic b Total Gate Charge Q g 4 Gate-ource Charge Q gs V = V, V G = 4.5 V, I =. A 7 nc Gate-rain Charge Q gd 4.5 Gate Resistance R g f = MHz.7.4. Ω Turn-On elay Time t d(on) Rise Time t r V = V, R L = Ω 5 Turn-Off elay Time t d(off) I A, V GEN = V, R g = 6 Ω ns Fall Time t f 5 Body iode Reverse Recovery Time t rr 3 6 Body iode Reverse Recovery Charge Q rr 5 5 nc I F = 3. A, di/dt = A/µs Reverse Recovery Fall Time t a 4 ns Reverse Recovery Rise Time t b 6 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERITIC 5 C, unless otherwise noted 6 6 V G = thru 4 V I - rain Current (A) V - rain Current (A) I 36 4 T C = 5 C 5 C - 55 C V - rain-to-ource Voltage (V) Output Characteristics V G - Gate-to-ource Voltage (V) Transfer Characteristics ocument Number: Rev. E, 7-Mar-8
3 i7n TYPICAL CHARACTERITIC 5 C, unless otherwise noted. 5 - On-Resistance (Ω) R (on) V G = 4.5 V V G = V C - Capacitance (pf) 5 5 C rss C iss C oss I - rain Current (A) On-Resistance vs. rain Current V - rain-to-ource Voltage (V) Capacitance.6 - Gate-to-ource Voltage (V) V G V = V I =. A R (on) - On-Resistance (Normalized) V G = V I =. A Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.4. I = 5 A - ource Current (A) I T J = 5 C T J = 5 C - On-Resistance (Ω) R (on) I =. A V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage ocument Number: Rev. E, 7-Mar-8 3
4 i7n TYPICAL CHARACTERITIC 5 C, unless otherwise noted.4 5. I = 5 µa 4 Variance (V) V G(th) Power (W) T J - Temperature ( C) Threshold Voltage.. Time (s) ingle Pulse Power, Junction-to-Ambient 6 I - rain Current (A) Limited by R (on) *. I (on) Limited T A = 5 C ingle Pulse I M Limited P(t) =. P(t) =. P(t) =. P(t) =. P(t) = P(t) = C. BV Limited. V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja = 65 C/W 3. T JM - T A = P M Z (t) thja ingle Pulse 4. urface Mounted quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 ocument Number: Rev. E, 7-Mar-8
5 i7n TYPICAL CHARACTERITIC 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance. uty Cycle =.5.. ingle Pulse quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: Rev. E, 7-Mar-8 5
6 Legal isclaimer Notice Vishay isclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. ocument Number: 9 Revision: 8-Jul-8
N-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationN-Channel 30-V (D-S) MOSFET
i4336y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I (A) Q g (Typ) 3.35 at V G = V 5.4 at V G = 4.5 V 36 O-8 FEATURE Ultra Low On-Resistance Using High ensity TrenchFET Gen II Power MOFET Technology
More informationN-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
More informationP-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationP-Channel 100 V (D-S) MOSFET
P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm
More informationN-Channel 200-V (D-S) MOSFET
i6y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V.. at V G = 6. V. FEATURE Halogen-free According to IEC 69-- efinition TrenchFET Power MOFET PWM Optimized for fast witching
More informationP-Channel 30-V (D-S) MOSFET
Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationN-Channel 80-V (D-S) MOSFET
N-Channel 8-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) 8.65 @ V G = V 9.5. @ V G = 6. V 8.3 O-8 8 7 G 3 6 G 4 5 Ordering Information: Top View -T (with Tape and Reel) N-Channel MOFET ABOLUTE MAXIMUM
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) Max. I (A) Q g (Typ.) 8.75 at V G = 6 V a nc. at V G = V a.95 at V G =.5 V 5 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View G Ordering Information: -T-GE
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationN-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationN-Channel 8 V (D-S) MOSFET
N-Channel 8 V (-) MOFET i88b Vishay iliconix PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (TYP.) 8.8 mm xxx xx.54 at V G = 4.5 V 3.5.6 at V G =.5 V 3.3.68 at V G =.8 V 3..86 at V G =.5 V.3.35 at V G =. V
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationCurrent Sensing MOSFET, N-Channel 30-V (D-S)
New Product Si73EY Current Sensing MOSFET, N-Channel 3-V (-S) V S (V) r S(on) ( ) I (A) 3.5 @ V GS = V.7. @ V GS =.5 V. SO- SENSE KELVIN S 3 7 G KELVIN G Top View 5 SENSE N-Channel MOSFET S Parameter Symbol
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationComplementary MOSFET Half-Bridge (N- and P-Channel)
New Product Si45Y Complementary MOSFET Half-Bridge (N- and P-Channel) V S (V) r S(on) ( ) I (A) N-Channel.3 @ V GS = 4.5 V 7..4 @ V GS =.5 V 6. P-Channel.65 @ V GS = 4.5 V 4.5. @ V GS =.5 V 3.5 S S SO-8
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
More informationP-Channel 8 V (D-S) MOSFET
SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationP-Channel 60-V (D-S) MOSFET
New Product TP6KL/B5KL P-Channel 6-V (-) MOFET PROUCT UMMARY V (BR)(min) (V) r (on) ( ) V G(th) (V) (A) 6 @ V G = V.7 6 to. @ V G =.5 V. FEATURE TrenchFET Power MOFET E Protected: V APPLICATION rivers:
More informationN-Channel 30-V (D-S) MOSFET with Schottky Diode
New Product i48by N-Channel -V (-) MOFET with chottky iode MOFET PROUCT UMMARY V (V) r (on) ( ) I (A).35 @ V G = V. @ V G = 4.5 V 8 CHOTTKY PROUCT UMMARY V (V) iode Forward Voltage V (V) I F (A).53 V @
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationN-Channel 12 V (D-S) MOSFET
New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET
More informationN-Channel and P-Channel 20 V (D-S) MOSFET
N-Channel and (D-) MOFET DECRIPTION The attached PICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMO. The subcircuit model is extracted and optimized
More informationP-Channel 30 V (D-S) MOSFET
Si473H P-Channel 30 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 30 SOT-363 SC-70 (6-LEAS) 0.00 at V GS = - 0 V -.7 0.45 at V GS = - 4.5 V -.7 4. nc FEATURES Halogen-free According
More informationN-Channel 20-, 30-, 40-V (D-S) MOSFETs
TNL/4L, VNL/LS N-Channel -, -, 4-V (D-S) MOSFETs Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) TNL. @ V GS = V.5 to.64 TN4L 4. @ V GS = V.5 to.64 VNL. @ V GS = V.8 to.5.64 VNLS. @
More informationDual N-/Dual P-Channel 30-V (D-S) MOSFETs
Dual N-/Dual P-Channel 3-V (D-S) MOSFETs V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) N-Channel 3 @ V GS = 2 V.8 to 2.5.85 P-Channel 3 2 @ V GS = 2 V 2 to 4.5.6 Low On-Resistance:.8/.6 Low Threshold:.5/
More informationP-Channel 20-V (D-S) MOSFET
New Product Si763N P-Channel 0-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) e,f Q g (Typ.) 0.0087 at V GS = - 0 V - 35-0 8. nc 0.0 at V GS = -.5V - 35 FEATURES Halogen-free According to IEC 69--
More informationN-Channel 60 V (D-S) MOSFET
Si6X N-hannel 6 V (D-S) MOSFET PRODUT SUMMARY V DS(min) (V) R DS(on) ( ) V GS(th) (V) I D (ma) 6. at V GS = V to. FEATURES Halogen-free According to IE 69-- Definition Low On-Resistance:. Low Threshold:
More informationGate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
More informationBattery Disconnect Switch
New Product Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low r DS(on) MOSFET Level-Shifted
More informationMatched N-Channel JFET Pairs
Matched N-Channel JFET Pairs N// PRODUCT SUMMARY Part Number V GS(off) (V) V (BR)GSS Min (V) g fs Min I G Typ (pa) V GS V GS Max (mv) N. to 7. N. to 7. N. to 7. FEATURES BENEFITS APPLICATIONS Two-Chip
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V 98 3 82 nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationTop View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
More informationFDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
More information34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
More informationGreen. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationApplications. Bottom S S S. Pin 1 G D D D
FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationFDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m
F35BZ P-Channel PowerTrench MOFET -V, -8.8A, m Features Max r (on) = m at V G = -V, I = -8.8A Max r (on) = 35m at V G = -.5V, I = -.7A Extended V G range (-5V) for battery applications HBM E protection
More informationSurface Mount ESD Capability Rectifiers
Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.
More informationN- and P-Channel 30 V (D-S) MOSFET
N and PChannel 3 V (DS) MOSFET Si539DDL D 6 SOT363 SC7 Dual (6 leads) S 4 G 5 FEATURES TrenchFET power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999
More informationApplications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V
FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
More informationFDS V P-Channel PowerTrench MOSFET
F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current
More informationDG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS
G2707 High Speed, Low Voltage, 3, ifferential 4:1 CMOS Analog Multiplexer/Switch ESCRIPTION The G2707 is a high speed, low voltage, 3, differential 4:1 multiplexer. It operates from a 1.65 V to 4.3 V single
More informationJ/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113
N-Channel JFETs J SST J SST J SST Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) J/SST to 5 4 J/SST to 5 5 5 4 J/SST 5 4 Low On-Resistance: < Fast Switching t ON : 4 ns Low
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationMonolithic N-Channel JFET Dual
SST Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) Min (ms) I G Typ (pa) V GS V GS Max (mv) to 6. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching
More informationPin 1 S S G. Bottom View. Part Number Case Packaging DMT3004LFG-7 POWERDI ,000/Tape & Reel DMT3004LFG-13 POWERDI ,000/Tape & Reel
YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
More informationSingle Phase Fast Recovery Bridge (Power Modules), 61 A
VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single
More informationGreen. Pin1. Part Number Case Packaging DMTH3004LPSQ-13 POWERDI ,500/Tape & Reel
NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements
More informationGreen. Pin 1 1 S S S G 2. Bottom View
YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
More informationSmall Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching
More information