Applications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V

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1 FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other MOFET suppliers Lowers switching noise/emi ML robust package design % UIL tested RoH Compliant Top Pin Bottom eneral escription This N-Channel MV MOFET is produced using ON emiconductor s advanced PowerTrench process that incorporates hielded ate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications Primary C-C MOFET ynchronous Rectifier in C-C and AC-C Motor rive olar Pin FM3N8C N-Channel hielded ate PowerTrench MOFET Power 56 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 8 V V ate to ource Voltage ± V Thermal Characteristics rain Current -Continuous T C = 5 C (Note 5) 47 I -Continuous T C = C (Note 5) 9 -Continuous T A = 5 C (Note a) A -Pulsed (Note 4) 658 E A ingle Pulse Avalanche Energy (Note 3) 486 mj Power issipation T P C = 5 C 5 Power issipation T A = 5 C (Note a).7 W T J, T T Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case R θja Thermal Resistance, Junction to Ambient (Note a) 45 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM3N8C FM3N8C Power 56 3 mm 3 units emiconductor Components Industries, LLC, 7 May, 7, Rev.. Publication Order Number: FM3N8C/

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 μa, V = V 8 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 5 μa, referenced to 5 C 6 mv/ C I Zero ate Voltage rain Current V = 64 V, V = V μa I ate to ource Leakage Current V = ± V, V = V na On Characteristics V (th) ate to ource Threshold Voltage V = V, I = 3 μa V ΔV (th) ΔT J ate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics witching Characteristics I = 3 μa, referenced to 5 C -8. mv/ C V = V, I = 56 A.6 3. r (on) tatic rain to ource On Resistance V = 6 V, I = 8 A mω V = V, I = 56 A, T J = 5 C g F Forward Transconductance V = 5 V, I = 56 A 3 C iss Input Capacitance pf V = 4 V, V = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 44 8 pf R g ate Resistance..6.3 Ω t d(on) Turn-On elay Time 36 ns t r Rise Time V = 4 V, I = 56 A, 8 6 ns t d(off) Turn-Off elay Time V = V, R EN = 6 Ω 4 64 ns t f Fall Time 3 ns Q g Total ate Charge V = V to V 5 73 nc Q g Total ate Charge V = V to 6 V V = 4 V, nc Q gs ate to ource Charge I = 56 A 7 nc Q gd ate to rain Miller Charge nc Q oss Output Charge V = 4 V, V = V 77 nc Q sync Total ate Charge ync V = V, I = 56 A 44 nc FM3N8C N-Channel hielded ate PowerTrench MOFET rain-ource iode Characteristics V = V, I =. A (Note ).7. V ource to rain iode Forward Voltage V V = V, I = 56 A (Note ).8.3 t rr Reverse Recovery Time 8 45 ns I F = 8 A, di/dt = 3 A/μs Q rr Reverse Recovery Charge nc t rr Reverse Recovery Time 3 36 ns I F = 8 A, di/dt = A/μs Q rr Reverse Recovery Charge 94 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θca is determined by the user's board design. a. 45 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper. F F. Pulse Test: Pulse Width < 3 μs, uty cycle <.%. 3. E A of 486 mj is based on starting T J = 5 C; N-ch: L = 3 mh, I A = 8 A, V = 8 V, V = V. % test at L =. mh, I A = 57 A. 4. Pulsed Id please refer to Fig OA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. F F

3 Typical Characteristics T J = 5 C unless otherwise noted. I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. I = 56 A V = V V = V V = 8 V V = 7 V V = 6 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5.5 V V = 5 V V, RAIN TO OURCE VOLTAE (V) NORMALIZE RAIN TO OURCE ON-REITANCE PULE URATION = 8 μs V = 8 V V = V UTY CYCLE =.5% MAX On Region Characteristics Figure. Normalized On-Resistance vs. rain Current and ate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V = 5 V V = 5.5 V I, RAIN CURRENT (A) T J = 5 o C T J = 5 o C I = 56 A V = 6 V V = 7 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V, ATE TO OURCE VOLTAE (V) FM3N8C N-Channel hielded ate PowerTrench MOFET Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On-Resistance vs. ate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C V, ATE TO OURCE VOLTAE (V) I, REVERE RAIN CURRENT (A) 3.. V = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAE (V) Figure 5. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs. ource Current 3

4 Typical Characteristics T J = 5 C unless otherwise noted. V, ATE TO OURCE VOLTAE (V) IA, AVALANCHE CURRENT (A) I = 56 A Q g, ATE CHARE (nc) Figure 7. V = 3 V V = 5 V V = 4 V f = MHz V = V. 8 V, RAIN TO OURCE VOLTAE (V) ate Charge Characteristics Figure 8. Capacitance vs. rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C... t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) V = 6 V V = V C iss C oss C rss R θjc =. o C/W T C, CAE TEMPERATURE ( o C) FM3N8C N-Channel hielded ate PowerTrench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs. Case Temperature I, RAIN CURRENT (A) THI AREA I LIMITE BY r (on) μs μs INLE PULE T J = MAX RATE ms ms R θjc =. o C/W CURVE BENT TO ms/c T C = 5 o C MEAURE ATA.. 5 V, RAIN to OURCE VOLTAE (V) P(PK), PEAK TRANIENT POWER (W) INLE PULE R θjc =. o C/W T C = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation 4

5 Typical Characteristics T J = 5 C unless otherwise noted. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.. UTY CYCLE-ECENIN ORER = INLE PULE Figure 3. t, RECTANULAR PULE URATION (sec) P M NOTE: Junction-to-Case Transient Thermal Response Curve t t Z θjc (t) = r(t) x R θjc R θjc =. o C/W Peak T J = P M x Z θjc (t) + T C uty Cycle, = t / t FM3N8C N-Channel hielded ate PowerTrench MOFET 5

6 FM3N8C N-Channel hielded ate PowerTrench MOFET imensional Outline and Pad Layout ON emiconductor and the ON Logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor's product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 6