FDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET

Transcription

1 FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r S(on) High power and current handling capability in a widely used surface mount package Fast switching speed % UIL Tested RoHS Compliant eneral escription This P-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has been optimized for r S(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier S S 5 Pin SuperSOT TM - MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage -8 V V S ate to Source Voltage ± V rain Current -Continuous (Note a) -. I -Pulsed - E AS Single Pulse Avalanche Energy (Note ) 7 mj Power issipation (Note a). P Power issipation (Note b).7 T J, T ST Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics A W R θjc Thermal Resistance, Junction to Case R θja Thermal Resistance, Junction to Ambient (Note a) 78 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity.55 FC55 SSOT- 7 8 mm units Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FC55/

2 Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = -5 μa, V S = V -8 V ΔBV SS Breakdown Voltage Temperature I ΔT J Coefficient = -5 μa, referenced to 5 C - mv/ C I SS Zero ate Voltage rain Current V S = - V, V S = V - μa I SS ate to Source Leakage Current V S = ± V, V S = V ± na On Characteristics V S(th) ate to Source Threshold Voltage V S = V S, I = -5 μa V ΔV S(th) ΔT J r S(on) ate to Source Threshold Voltage Temperature Coefficient Static rain to Source On Resistance ynamic Characteristics I = -5 μa, referenced to 5 C 5 mv/ C V S = - V, I = -. A 7 8 V S = -.5 V, I = -.9 A 7 V S = - V, I = -. A, T J = 5 C 7 g FS Forward Transconductance V = - V, I = -. A. S C iss Input Capacitance pf V S = - V, V S = V, C oss Output Capacitance 9 5 pf f = MHz C rss Reverse Transfer Capacitance pf R g ate Resistance 5.7 Ω mω Switching Characteristics t d(on) Turn-On elay Time.5 ns t r Rise Time V = - V, I = -. A,. ns t d(off) Turn-Off elay Time V S = - V, R EN = Ω 8 ns t f Fall Time.9 ns Total ate Charge V S = V to - V nc Q g(tot) Total ate Charge V S = V to -.5 V V = - V.8 nc Q gs Total ate Charge I = -. A. nc Q gd ate to rain Miller Charge.7 nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V S = V, I S = -. A (Note ) V t rr Reverse Recovery Time 5 ns I F = -. A, di/dt = A/μs Q rr Reverse Recovery Charge 8 nc NOTES:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 78 C/W when mounted on a in pad of oz copper b.75 C/W when mounted on a minimum pad of oz copper SS SF S F. Pulse Test: Pulse Width < μs, uty cycle <. %.. Starting T J = 5 o C, L = mh, I AS = -5 A, V = -8 V, V S = - V. SS SF S F

3 Typical Characteristics T J = 5 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 8 V S = - V Figure. V S = -.5 V PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = -.5 V V S = - V V S = -.5 V -V S, RAIN TO SOURCE VOLTAE (V) I = -. A V S = - V NORMALIZE RAIN TO SOURCE ON-RESISTANCE PULSE URATION = 8 μs V S = -.5 V V S = - V UTY CYCLE =.5% MAX 8 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and ate Voltage T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) 5 V S = -.5 V V S = - V -I, RAIN CURRENT (A) I = -. A T J = 5 o C V S = -.5 V PULSE URATION = 8 μs UTY CYCLE =.5% MAX T J = 5 o C 8 -V S, ATE TO SOURCE VOLTAE (V) Figure. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs ate to Source Voltage -I, RAIN CURRENT (A) 8 PULSE URATION = 8 μs UTY CYCLE =.5% MAX V S = -5 V T J = 5 o C T J = 5 o C T J = -55 o C 5 -V S, ATE TO SOURCE VOLTAE (V) Figure 5. Transfer Characteristics -IS, REVERSE RAIN CURRENT (A).. V S = V T J = 5 o C T J = 5 o C T J = -55 o C V S, BOY IOE FORWAR VOLTAE (V) Figure. Source to rain iode Forward Voltage vs Source Current

4 Typical Characteristics T J = 5 C unless otherwise noted -VS, ATE TO SOURCE VOLTAE (V) -IAS, AVALANCHE CURRENT (A) 8 I = -. A 9 5 Figure V = - V V = - V V = -5 V Q g, ATE CHARE (nc). -V S, RAIN TO SOURCE VOLTAE (V) ate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) -I, RAIN CURRENT (A) f = MHz V S = V V S = -.5 V V S = - V C iss C oss C rss R θja = 78 o C/W T C, Ambient TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous rain Current vs Ambient Temperature -I, RAIN CURRENT (A) THIS AREA IS ms. LIMITE BY r S(on) ms SINLE PULSE TJ = MAX RATE s R θja = 75 o C/W s. T A = 5 o C C.5. -V S, RAIN to SOURCE VOLTAE (V) Figure. Forward Bias Safe Operating Area us ms P(PK), PEAK TRANSIENT POWER (W) V S = - V SINLE PULSE R θja = 75 o C/W T A = 5 o C t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja.. UTY CYCLE-ESCENIN ORER = SINLE PULSE R θja = 75 o C/W t, RECTANULAR PULSE URATION (sec) Figure. Junction-to-Ambient Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A 5

6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERIN INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or 8 8 Toll Free USA/Canada Fax: 75 7 or 8 87 Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative