MMBT2369A NPN Switching Transistor
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1 MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN Switching Transistor Ordering Information Part Number Marking Package Packing Method MMBT69A S SOT- L Tape and Reel Absolute Maximum Ratings (),() Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 5 unless otherwise noted. Symbol Parameter Value Unit V EO ollector-emitter Voltage 5 V V BO ollector-base Voltage 4 V V EBO Emitter-Base Voltage 4.5 V I ollector urrent - ontinuous ma T J, T STG Operating and Storage Junction Temperature Range 5 to +5 Notes:. These ratings are based on a maximum junction temperature of 5.. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations. 997 Semiconductor omponents Industries, LL. October-7, Rev. Publication Order Number: MMBT69A/D
2 Thermal haracteristics () Values are at T A = 5 unless otherwise noted. Symbol Parameter Value Unit Total Device Dissipation 5 mw P D Derate Above 5.8 mw/ R qja Thermal Resistance, Junction-to-Ambient 556 /W Note:. Device is mounted on FR PB.6 inch X.6 inch X.6 inch. Electrical haracteristics Values are at T A = 5 unless otherwise noted. Symbol Parameter onditions Min. Max. Unit BV EO ollector-emitter Breakdown Voltage (4) I = ma, I B = 5 V BV ES ollector-emitter Breakdown Voltage I = μa, V BE = 4 V BV BO ollector-base Breakdown Voltage I = μa, I E = 4 V BV EBO Emitter-Base Breakdown Voltage I E = μa, I = 4.5 V I BO ollector ut-off urrent V B = V, I E =.4 V B = V, I E =, T A = 5 μa h FE D urrent Gain (4) I = ma, V E =.5 V, T A = 5 I = ma, V E =. V 4 I = ma, V E =. V I = ma, I B =. ma. V E (sat) ollector-emitter Saturation I = ma, I B =. ma, T A = 5. Voltage (4) I = ma, I B =. ma.5 V I = ma, I B = ma.5 I = ma, I B =. ma.7.85 I = ma, I B =. ma, T A = 5. V BE (sat) Base-Emitter Saturation Voltage I = ma, I B =. ma, T A = 5.59 V I = ma, I B =. ma.5 I = ma, I B = ma.6 obo Output apacitance V B = 5. V, I E =, f =. MHz 4. pf ibo Input apacitance V EB =.5 V, I =, f =. MHz 5. pf h fe Small-Signal urrent Gain I = ma, V E = V R G =. kω, f = MHz 5. t s Storage Time I B = I B = I = ma ns t on Turn-On Time V =. V, I = ma, I B =. ma ns t off Turn-Off Time V =. V, I = ma, I B =. ma, I B =.5 ma 8 ns MMBT69A NPN Switching Transistor Note: 4. Pulse test: Pulse width μs, duty cycle %
3 Typical Performance haracteristics h - D URRENT GAIN FE 5 5 V =.V E Figure. D urrent Gain vs. ollector urrent V - OLLETOR-EMITTER VOLTAGE (V) ESAT β = Figure. ollector-emitter Saturation Voltage vs. ollector urrent MMBT69A NPN Switching Transistor V - BASE-EMITTER VOLTAGE (V) BESAT β = 5 5. Figure. Base-Emitter Saturation Voltage vs. ollector urrent V - BASE-EMITTER ON VOLTAGE (V) BE(O N) V =.V E Figure 4. Base-Emitter On Voltage vs. ollector urrent I - OLLETOR URRENT (na) BO 6 V B= V T A - AMBIENT TEMPERATURE ( ) Figure 5. ollector ut-off urrent vs. Ambient Temperature APAITANE (pf) 5 4 ibo obo REVERSE BIAS VOLTAGE (V) Figure 6. Output apacitance vs. Reverse Bias Voltage F =.MHz
4 Typical Performance haracteristics (ontinued) SWITHING TIMES (ns) 5 5 V =. V I = I B = I B = 5 5 t s d Figure 7. Switching Times vs. ollector urrent t sr t sf t s SWITHING TIMES (ns) t s f t s t s d t s r I = ma, I B =. ma, I B =.5 ma, V =. V T - AMBIENT TEMPERATURE ( ) A Figure 8. Switching Times vs. Ambient Temperature MMBT69A NPN Switching Transistor I - TURN OFF BASE URRENT (ma) B I = ma V =. V t =. ns s 6. ns 4. ns I - TURN ON BASE URRENT (ma) B I - TURN OFF BASE URRENT (ma) B I = ma V =. V t S=. ns 4. ns 6. ns 6. ns 8. ns I - TURN ON BASE URRENT (ma) B Figure 9. Storage Time vs. Turn-On and Turn-Off Base urrents Figure. Storage Time vs. Turn-On and Turn-Off Base urrents I - TURN OFF BASE URRENT (ma) B I = ma V =. V t = 7. ns f 8. ns ns I - TURN ON BASE URRENT (ma) B I - TURN OFF BASE URRENT (ma) B I = ma V =. V t f =. ns I - TURN ON BASE URRENT (ma) B. ns 4. ns 5. ns Figure. Fall Time vs. Turn-On and Turn-Off Base urrents Figure. Fall Time vs. Turn-On and Turn-Off Base urrents 4
5 Typical Performance haracteristics (ontinued) I - TURN OFF BASE URRENT (ma) B I = ma V =. V t =. ns f I - TURN ON BASE URRENT (ma) B. ns 4. ns 8. ns. ns Figure. Fall Time vs. Turn-On and Turn-Off Base urrents V - BASE-EMITTER OFF VOLTAGE (V) BE(O) I = ma V =. V t d = 8. ns 5 5 I - TURN ON BASE URRENT (ma) B 5. ns 4. ns. ns Figure 4. Delay Time vs. Base-Emitter Off Voltage and Turn-On Base urrent MMBT69A NPN Switching Transistor I - TURN ON BASE URRENT (ma) B 5 V =. V t =. ns r 5. ns ns 5 ns Figure 5. Rise Time vs. Turn-On Base urrent and ollector urrent P - POWER DISSIPATION (mw) D 5 4 TO-9 SOT TEMPERATURE ( ) Figure 6. Power Dissipation vs. Ambient Temperature 5
6 Physical Dimensions (.9).9± A B MMBT69A NPN Switching Transistor LAND PATTERN REOMMENDATION. MAX SEE DETAIL A (.9)....4±. GAGE PLANE..8. MIN (.55).5 SEATING PLANE NOTES: UNLESS OTHERWISE SPEIFIED A) REFERENE JEDE REGISTRATION TO, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. ) DIMENSIONS ARE INLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANING PER ASME Y4.5M E) DRAWING FILE NAME: MADREV SALE: X Figure 7. -LEAD, SOT, JEDE TO, LOW PROFILE 6
7 ON Semiconductor and are trademarks of Semiconductor omponents Industries, LL dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA lass medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor 95 E. nd Pkwy, Aurora, olorado 8 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com Semiconductor omponents Industries, LL N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
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