ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description The ISL9V5036S3S, ISL9V5036P3, and ISL9V503
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1 cospark mj, 36V, N-Channel Ignition IBT eneral Description The ISL9V36S3S, ISL9V36P3, and ISL9V36S3 are the next generation IBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-2 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components. cospark devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales office for more information. Formerly Developmental Type Applications Automotive Ignition Coil Driver Circuits Coil-On Plug Applications Features Industry Standard D 2 -Pak package SCIS nergy = mj at T J = 2 o C Logic Level ate Drive Qualified to AC Q1 RoHS Compliant Package JDC TO-263AB D²-Pak JDC TO-2AB Symbol JDC TO-262AA C C AT R 1 COLLCTOR R 2 COLLCTOR (FLAN) COLLCTOR (FLAN) MITTR Device Maximum Ratings T A = 2 C unless otherwise noted Symbol Parameter Ratings Units BV CR Collector to mitter Breakdown Voltage (I C = 1 ma) 39 V BV CS mitter to Collector Voltage - Reverse Battery Condition (I C = ma) 24 V SCIS2 At Starting T J = 2 C, I SCIS = 38.A, L = 67 µhy mj SCIS1 At Starting T J = 1 C, I SCIS = A, L = 67 µhy mj I C2 Collector Current Continuous, At T C = 2 C, See Fig 9 46 A I C1 Collector Current Continuous, At T C = 1 C, See Fig 9 31 A V M ate to mitter Voltage Continuous ± V P D Power Dissipation Total T C = 2 C 2 W Power Dissipation Derating T C > 2 C 1.67 W/ C T J Operating Junction Temperature Range - to 17 C T ST Storage Junction Temperature Range - to 17 C T L Max Lead Temp for Soldering (Leads at 1.6mm from Case for s) C T pkg Max Lead Temp for Soldering (Package Body for s) 26 C SD lectrostatic Discharge Voltage at pf, 1Ω 4 kv 9 Semiconductor Components Industries, LLC. October-17, Rev. 3 Publication Order Number: ISL9V36S3S/D
2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36S ISL9V36S3ST TO-263AB 3mm 24mm 8 V36P ISL9V36P3 TO-2AA Tube N/A V36S ISL9V36S3 TO-262AA Tube N/A V36S ISL9V36S3S TO-263AB Tube N/A lectrical Characteristics T A = 2 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV CR Collector to mitter Breakdown Voltage I C = 2mA, V =, R = 1KΩ, See Fig. 1 T J = - to 1 C BV CS Collector to mitter Breakdown Voltage I C = ma, V =, R =, See Fig. 1 T J = - to 1 C BV CS mitter to Collector Breakdown Voltage I C = -7mA, V = V, T C = 2 C V V - - V BV S ate to mitter Breakdown Voltage I S = ± 2mA ±12 ±14 - V I CR Collector to mitter Leakage Current V CR = 2V, R = 1KΩ, See Fig. 11 I CS mitter to Collector Leakage Current V C = 24V, See Fig. 11 T C = 2 C µa T C = 1 C ma T C = 2 C ma T C = 1 C - - ma R 1 Series ate Resistance Ω R 2 ate to mitter Resistance K - K Ω On State Characteristics V C(SAT) Collector to mitter Saturation Voltage I C = A, V = 4.V V C(SAT) Collector to mitter Saturation Voltage I C = 1A, V = 4.V T C = 2 C, See Fig V T C = 1 C V Dynamic Characteristics Q (ON) ate Charge I C = A, V C = 12V, V = V, See Fig. 14 V (TH) ate to mitter Threshold Voltage I C = 1.mA, V C = V, See Fig. Switching Characteristics Thermal Characteristics nc T C = 2 C V T C = 1 C V V P ate to mitter Plateau Voltage I C = A, V C = 12V V t d(on)r Current Turn-On Delay Time-Resistive V C = 14V, R L = 1Ω, µs t rr Current Rise Time-Resistive V = V, R = 1KΩ µs T J = 2 C, See Fig. 12 t d(off)l Current Turn-Off Delay Time-Inductive V C = V, L = 2mH, µs t fl Current Fall Time-Inductive V = V, R = 1KΩ µs T J = 2 C, See Fig. 12 SCIS Self Clamped Inductive Switching T J = 2 C, L = 67 µh, R = 1KΩ, V = V, See Fig. 1 & mj R θjc Thermal Resistance Junction-Case TO-263, TO-2, TO C/W 2
3 Typical Characteristics I SCIS, INDUCTIV SWITCHIN CURRNT (A) V C, COLLCTOR TO MITTR VOLTA (V) T J = 1 C R = 1KΩ, V = V,V dd = 14V T J = 2 C SCIS Curves valid for V clamp Voltages of <39V 1 2 t CLP, TIM IN CLAMP (µs) Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp V = 4.V V =.V V = 3.7V V = 8.V I C = 6A V = 4.V I SCIS, INDUCTIV SWITCHIN CURRNT (A) V C, COLLCTOR TO MITTR VOLTA (V) T J = 1 C R = 1KΩ, V = V,V dd = 14V SCIS Curves valid for V clamp Voltages of <39V L, INDUCTANC (mhy) T J = 2 C Figure 2. Self Clamped Inductive Switching Current vs Inductance V = 4.V V =.V V = 8.V V = 3.7V V = 4.V I C = A T J, JUNCTION TMPRATUR ( C) Figure 3. Collector to mitter On-State Voltage vs Junction Temperature I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V =.V V = 4.V V = 4.V V = 3.7V T J = - C V C, COLLCTOR TO MITTR VOLTA (V) Figure. Collector Current vs Collector to mitter On-State Voltage T J, JUNCTION TMPRATUR ( C) Figure 4.Collector to mitter On-State Voltage vs Junction Temperature I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V =.V V = 4.V V = 4.V V = 3.7V T J = 2 C V C, COLLCTOR TO MITTR VOLTA (V) Figure 6. Collector Current vs Collector to mitter On-State Voltage 3
4 Typical Characteristics (Continued) I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V =.V V = 4.V V = 4.V V = 3.7V V C, COLLCTOR TO MITTR VOLTA (V) T J = 17 C Figure 7. Collector to mitter On-State Voltage vs Collector Current I C, DC COLLCTOR CURRNT (A) V = 4.V I C, COLLCTOR TO MITTR CURRNT (A) V TH, THRSHOLD VOLTA (V) DUTY CYCL <.%, V C = V PULS DURATION = 2µs T J = 2 C T J = 17 C T J = - C V, AT TO MITTR VOLTA (V) Figure 8. Transfer Characteristics V C = V I C = 1mA T C, CAS TMPRATUR ( C) Figure 9. DC Collector Current vs Case Temperature T J, JUNCTION TMPRATUR ( C) Figure. Threshold Voltage vs Junction Temperature V CS = 24V 18 I C = 6.A, V = V, R = 1KΩ Resistive t OFF LAKA CURRNT (µa) 1 V CS = V V CS = 2V SWITCHIN TIM (µs) Inductive t OFF Resistive t ON T J, JUNCTION TMPRATUR ( C) Figure 11. Leakage Current vs Junction Temperature T J, JUNCTION TMPRATUR ( C) Figure 12. Switching Time vs Junction Temperature 4
5 Typical Characteristics (Continued) C, CAPACITANC (pf) 2 1 C IS C RS FRQUNCY = 1 MHz C OS 1 2 V C, COLLCTOR TO MITTR VOLTA (V) Figure 13. Capacitance vs Collector to mitter Voltage BV CR, BRAKDOWN VOLTA (V) I CR = ma V, AT TO MITTR VOLTA (V) T J = 17 C I (RF) = 1mA, R L =.6Ω, T J = 2 C V C = 12V V C = 6V T J = 2 C Q, AT CHAR (nc) Figure 14. ate Charge T J = - C 3 R, SRIS AT RSISTANC (kω) Figure 1. Breakdown Voltage vs Series ate Resistance Z thjc, NORMALIZD THRMAL RSPONS SINL PULS P D t 1 DUTY FACTOR, D = t 1 / t 2 PAK T J = (P D X Z θjc X R θjc ) + T C t 2 T 1, RCTANULAR PULS DURATION (s) Figure 16. IBT Normalized Transient Thermal Impedance, Junction to Case
6 Test Circuits and Waveforms PULS N Figure 17. Inductive Switching Test Circuit VARY t P TO OBTAIN RQUIRD PAK I AS V S R R DUT C L V C L DUT V C + V DD - V R = 1KΩ DUT + V C Figure 18. t ON and t OFF Switching Test Circuit I AS t P C R or L BV CS LOAD V C - V DD V t P I AS.1Ω t AV Figure 19. nergy Test Circuit Figure. nergy Waveforms 6
7 SPIC Thermal Model RV 1 May 2 ISL9V36S3S / ISL9V336P3 / ISL9V36S3 CTHRM1 th 6 4.e2 CTHRM e-3 CTHRM e-2 CTHRM e-1 CTHRM e-1 CTHRM6 2 tl 1.6e-2 RTHRM1 th 6 1.e-2 RTHRM e-1 RTHRM3 4 1.e-1 RTHRM e-2 RTHRM e-2 RTHRM6 2 tl 1.9e-2 SABR Thermal Model SABR thermal model template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.e2 ctherm.ctherm2 6 = 3.6e-3 ctherm.ctherm3 4 = 4.9e-2 ctherm.ctherm4 4 3 = 3.2e-1 ctherm.ctherm 3 2 = 3.e-1 ctherm.ctherm6 2 tl = 1.6e-2 RTHRM1 RTHRM2 RTHRM3 RTHRM4 th 6 4 JUNCTION CTHRM1 CTHRM2 CTHRM3 CTHRM4 rtherm.rtherm1 th 6 = 1.e-2 rtherm.rtherm2 6 = 1.4e-1 rtherm.rtherm3 4 = 1.e-1 rtherm.rtherm4 4 3 = 9.e-2 rtherm.rtherm 3 2 = 9.4e-2 rtherm.rtherm6 2 tl = 1.9e-2 } RTHRM 3 CTHRM 2 RTHRM6 CTHRM6 tl CAS 7
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More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
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More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
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NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
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of 0 Decoder/Driver Open Collector The SN74LS45, -of-0 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 0-digit incandescent displays. All outputs remain off for
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, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
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More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
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NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
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NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
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MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
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Quad 2 Input Schmitt Trigger NAND Gate The SN74LS32 contains four 2-Input NAND Gates which accept standard TTL input signals and provide standard TTL output levels. They are capable of transforming slowly
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General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC336 is designed for general purpose, low power applications for consumer and industrial designs.
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