Features. T A =25 o C unless otherwise noted
|
|
- Hilary Harrell
- 6 years ago
- Views:
Transcription
1 NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 8mA DC and can deliver current up to A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features.8A, 6V. R DS(ON) = 5 V GS = V Voltage controlled p-channel small signal switch High density cell design for low R DS(ON) High saturation current D D S SOT- G G S Absolute Maximum Ratings T A =5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 6 V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note ).8 A P D Pulsed Maximum Power Dissipation (Note ).6 W Derate Above 5 C.9 mw/ C T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C T L Maximum Lead Temperature for Soldering Purposes, /6 from Case for Seconds C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note ) 5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 65D NDS65 7 8mm units Semiconductor Components Industries, LLC. September-7, Rev. Publication Order Number: NDS65/D
2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa 6 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = µa,referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 8 V, V GS = V µa V DS = 8 V,V GS = V T J = 5 C 5 µa I GSS Gate Body Leakage. V GS = ± V, V DS = V ± na 5 mv/ C NDS65 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa.7 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 5 µa,referenced to 5 C mv/ C R DS(on) Static Drain Source V GS = V, I D =.5 A. 5. Ω On Resistance V GS =.5 V, I D =.5 A V GS = V,I D =.5 A,T J =5 C I D(on) On State Drain Current V GS = V, V DS = V.6 A g FS Forward Transconductance V DS = V, I D =. A.7. S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 79 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf R G Gate Resistance V GS = 5 mv, f =. MHz Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 5 V, I D =. A,.5 5 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 6..6 ns t d(off) Turn Off Delay Time ns t f Turn Off Fall Time ns Q g Total Gate Charge V DS = 8 V, I D =.5 A,.8.5 nc Q gs Gate Source Charge V GS = V. nc Gate Drain Charge. nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current.8 A V SD Drain Source Diode Forward V GS = V, I S =.5 A(Note ).8.5 V Voltage t rr Diode Reverse Recovery Time I F =.5A 7 ns Diode Reverse Recovery Charge d if /d t = A/µs (Note ) 5 nc Q rr Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a minimum pad.. Scale : on letter size paper. Pulse Test: Pulse Width µs, Duty Cycle.%
3 Typical Characteristics NDS V GS =-V -6.V -.5V -.V -.5V -.V -.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =-.V -.5V -.V -.5V -6.V -V 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -.5A V GS = -V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM) 5 I D = -.5A T A = 5 o C T A = 5 o C 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage V DS = -V T A = -55 o C 5 o C 5 o C -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
4 Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -.5A V DS = -V -V 8-8V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 8 6 C RSS C OSS C ISS 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V NDS65 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics... R DS(ON) LIMIT V GS = -V R θja = 5 o C/W T A = 5 o C us ms ms ms s s DC. -V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 5.. t, TIME (sec) R θja = 5 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = t, TIME (sec) Figure. Transient Thermal Response Curve. R θja (t) = r(t) * R θja R θja = 5 o C/W P(pk) Thermal characterization performed using the conditions described in Note a. Transient thermal response will change depending on the circuit board design. t t T J - T A = P * R θja (t) Duty Cycle, D = t / t
5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
BSS84 P-Channel Enhancement Mode Field-Effect Transistor
BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation
More informationFeatures. Low gate charge. Symbol Parameter Q1 Q2 Units. Pulsed 8 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) 0.
FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
More information2N7002DW N-Channel Enhancement Mode Field Effect Transistor
2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More information2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
N7000 / N700 / NS700A N-Channel Enhancement Mode Field Effect Transistor Features High ensity Cell esign for Low R S(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current
More informationFDV301N Digital FET, N-Channel
FVN igital FET, N-Channel General escription This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, MOS technology. This
More informationFDG6322C Dual N & P Channel Digital FET
FG6C ual N & P Channel igital FET General escription These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationFDS V P-Channel PowerTrench MOSFET
F685 V P-Channel PowerTrench MOFET Features 8. A, V R (ON) =.7 Ω @ V G = V R (ON) =.35 Ω @ V G =.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Break
FQD3P50TM-F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationFDC3535. P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mω. FDC3535 P-Channel Power Trench MOSFET
FC55 P-Channel Power Trench MOSFET -8 V, -. A, 8 mω Features Max r S(on) = 8 mω at V S = - V, I = -. A Max r S(on) = mω at V S = -.5 V, I = -.9 A High performance trench technology for extremely low r
More informationMMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes
MMBD0 / MMBD0 / MMBD0 / MMBD04 / MMBD05 Small Signal Diodes Ordering Information SOT- Part Number Top Mark Package Packing Method MMBD0 4 SOT- L Tape and Reel MMBD0 5 SOT- L Tape and Reel MMBD0 6 SOT-
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationS3A - S3N General-Purpose Rectifiers
S3A - S3N General-Purpose Rectifiers Features Low-Profile Package Glass-Passivated Junction UL Flammability Classification: 94V-0 UL Certified, UL #E258596 SMC/DO-214AB COLOR BAND DENOTES CATHODE ELECTRICAL
More informationNDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NT355L N-Channel Logic Level Enhancement Mode Field Effect Transistor eneral escription Features These logic level N-Channel enhancement mode power field effect transistors are produced using ON emiconductor's
More informationBAT54XV2 Schottky Barrier Diode
June 2015 BAT54XV2 Schottky Barrier Diode Features Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1
More informationFFSH40120ADN-F155 Silicon Carbide Schottky Diode
FFSH412ADN-F155 Silicon Carbide Schottky Diode 12 V, 4 A Features Max Junction Temperature 175 o C Avalanche Rated 2 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling
More informationNDF08N50Z, NDP08N50Z. N-Channel Power MOSFET. Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
N-Channel Power MOSFET 500 V, 0.69 Features Low ON Resistance Low Gate Charge 0% Avalanche Tested These Devices are Pb Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (T C = 25 C unless otherwise
More informationPN2907 / MMBT2907 PNP General-Purpose Transistor
PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 ma. Sourced from process 63.
More informationFDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
More informationNSVJ6904DSB6. Advance Information N-Channel JFET 25 V, 20 to 40 ma, 40 ms, Dual
NSVJ694DSB6 Advance Information N-Channel JFET V, to 4 ma, 4 ms, Dual The NSVJ694DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance.
More informationNTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88
NTJD5C Small Signal MOSFET V / 8. V, Complementary, +.63 A /.775 A, SC 88 Features Complementary N and P Channel Device Leading 8. V Trench for Low R DS(on) Performance ESD Protected Gate ESD Rating: Class
More informationFGH40T120SQDNL4. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
FGHTSQDNL IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More informationNTF3055L175. Power MOSFET 2.0 A, 60 V, Logic Level. N Channel SOT AMPERES, 60 VOLTS R DS(on) = 175 m
NTF355L75 Power MOSFET. A, 6 V, Logic Level NChannel SOT3 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNGTB15N60S1EG. IGBT - Short-Circuit Rated. 15 A, 650 V V CEsat = 1.5 V
NGTBN6SEG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
More informationRS1A - RS1M Fast Rectifiers
RSA - RSM Fast Rectifiers Features Glass-Passivated Junction For Surface Mounted Applications uilt-in Strain Relief, Ideal for Automated Placement UL Certified: Certificate # E326243 SMA/DO-24AC COLOR
More informationNTMFD4C85N. PowerPhase, Dual N-Channel SO8FL. 30 V, High Side 25 A / Low Side 49 A
NTMFDCN PowerPhase, Dual N-Channel SOFL V, High Side A / Low Side 9 A Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices to Reduce Power
More informationNTF Power MOSFET 3.0 Amps, 60 Volts. N Channel SOT A, 60 V R DS(on) = 110 m
NTF55 Preferred Device Power MOSFET. Amps, Volts NChannel SOT Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationFPF1007-FPF1009 IntelliMAX Advanced Load Products
FPF07-FPF09 IntelliMAX Advanced Load Products Features 1.2 to 5.5 V Input Voltage Range Typical R ON = 30 mω at = 5.5 V Typical R ON = 40 mω at = 3.3 V Fixed Three Different Turn-on Rise Time µs / 80 µs
More informationNCV8450, NCV8450A. Self-Protected High Side Driver with Temperature and Current Limit
NCV85, NCV85A Self-Protected High Side Driver with Temperature and Current Limit The NCV85/A is a fully protected High Side Smart Discrete device with a typical R DS(on) of. and an internal current limit
More information74AC00, 74ACT00 Quad 2-Input NAND Gate
74AC00, 74ACT00 Quad 2-Input NAND Gate Features I CC reduced by 50% Outputs source/sink 24mA ACT00 has TTL-compatible inputs Ordering Information Order Number Package Number General Description The AC00/ACT00
More informationFFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.
FFSP66A Silicon Carbide Schottky Diode 6 V, 6 A Features Max Junction Temperature 7 o C Avalanche Rated 36 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationNTF6P02T3. Power MOSFET -6.0 Amps, -20 Volts. P-Channel SOT AMPERES -20 VOLTS R DS(on) = 44 m (Typ.)
NTFPT Power MOSFET. Amps, Volts PChannel SOT Features Low R DS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PbFree Package is Available Typical Applications
More informationApplications. Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
FM769 N-Channel PowerTrench MOFET 3 V, 9. mω Features Max r (on) = 9. mω at V G = V, I = 3. A Max r (on) =. mω at V G =. V, I =. A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationFFS50120AF-DIE. Silicon Carbide Schottky Diode 1200 V, 50 A
FFS512AF-DIE Silicon Carbide Schottky Diode 12 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationNTD30N02T4G. Power MOSFET 30 Amps, 24 Volts. N Channel DPAK. 30 AMPERES 24 VOLTS R DS(on) = 11.2 m (Typ.)
NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are
More informationApplications. Bottom S S S. Pin 1 G D D D
FM8635 N-Channel PowerTrench MOFET 8 V, 3 A,. mω Features Max r (on) =. mω at V = V, I = 5 A Max r (on) = 3. mω at V = 8 V, I = A Advanced Package and ilicon combination for low r (on) and high efficiency
More informationFFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.
FFSH151A Silicon Carbide Schottky Diode 1 V, 15 A Features Max Junction Temperature 175 C Avalanche Rated 145 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationBC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor
November 204 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC546, V CEO = 65 V Low-Noise: BC549, BC550 Complement to BC556, BC557,
More informationMMBT2369A NPN Switching Transistor
MMBT69A NPN Switching Transistor Description This device is designed for high speed saturated switching at collector currents of ma to ma. Sourced from process. SOT-. Base. Emitter. ollector MMBT69A NPN
More information74VHC08 Quad 2-Input AND Gate
74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation:
More informationNGTB40N60FLWG IGBT. 40 A, 600 V V CEsat = 1.85 V
NGTB4N6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering
More informationFFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.
FFSD8A Silicon Carbide Schottky Diode V, 8 A Features Max Junction Temperature 75 C Avalanche Rated 8 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery
More informationNGTG50N60FLWG IGBT. 50 A, 600 V V CEsat = 1.65 V
NGTGN6FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both
More informationNGTB30N120LWG IGBT. 30 A, 1200 V V CEsat = 1.75 V E off = 1.0 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationMMBF4391LT1, MMBF4392LT1, MMBF4393LT1. JFET Switching Transistors. N Channel. Pb Free Packages are Available.
LT1, LT1, LT1 JFET Switching Transistors NChannel Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS Vdc DrainGate Voltage V DG Vdc GateSource Voltage
More informationFFSH2065BDN-F085. Silicon Carbide Schottky Diode, 650 V, 20 A
FFSH65BDN-F85 Silicon Carbide Schottky Diode, 65 V, A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More informationFFSH30120A. Silicon Carbide Schottky Diode 1200 V, 30 A
Silicon Carbide Schottky Diode 12 V, 3 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to
More informationNGTB25N120LWG IGBT. 25 A, 1200 V V CEsat = 1.85 V E off = 0.8 mj
NGTBNLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications.
More informationApplications. Bottom S S S. Pin 1 G D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 80 V V GS Gate to Source Voltage ±20 V
FM3N8C N-Channel hielded ate PowerTrench MOFET 8 V, 47 A, 3. mω Features hielded ate MOFET Technology Max r (on) = 3. mω at V = V, I = 56 A Max r (on) = 8. mω at V = 6 V, I = 8 A 5% lower Qrr than other
More informationNTMFS4833NT3G. Power MOSFET. 30 V, 191 A, Single N-Channel, SO-8 FL Features
Power MOSFET 3 V, 191 A, Single N-Channel, SO-8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses These are
More informationFFSH20120ADN-F085. Silicon Carbide Schottky Diode 1200 V, 20 A
FFSH212ADN-F85 Silicon Carbide Schottky Diode 12 V, 2 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability
More information-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel
DMCDUDA COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) max I D max T A = + C.99Ω @ V GS =.V ma Q V.Ω @ V GS =.V ma.8ω @ V GS =.8V 8mA.Ω @ V GS =.V 9mA Features and Benefits
More informationNGTB40N120FL3WG. IGBT - Ultra Field Stop. 40 A, 1200 V V CEsat = 1.7 V E off = 1.1 mj
NGTBNFLWG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.oemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba
More information2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS
2N4918-2N492 Series Medium-Power Plastic PNP Silicon Transistors These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low
More informationNGTG25N120FL2WG. IGBT - Field Stop II. 25 A, 1200 V V CEsat = 2.0 V E off = 0.60 mj
NGTGNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationMMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L. JFET - VHF/UHF Amplifier Transistor. N Channel
MMBFJ9L, MMBFJL, SMMBFJ9L, SMMBFJL JFET - VHF/UHF Amplifier Transistor NChannel Features Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique Site and Control
More informationNTB45N06L, NTBV45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationBS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high
More informationNGTB20N120IHRWG. 20 A, 1200 V V CEsat = 2.10 V E off = 0.45 mj
NGTB2N2IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance
More informationNGTB40N135IHRWG. 40 A, 1350 V V CEsat = 2.40 V E off = 1.30 mj
NGTB4N3IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNTMFS4926NT3G. Power MOSFET 30 V, 44 A, Single N Channel, SO 8 FL
NTMFS9N Power MOSFET V, A, Single N Channel, SO 8 FL Features Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses Optimized Gate Charge to Minimize Switching Losses Optimized
More information74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs
74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs Features 5V tolerant inputs 2.3V 3.6V V CC specifications provided 5.5ns t PD max. (V CC = 3.3V), 10µA I CC max. Power down high impedance
More informationBAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE
BAS9LTG, BAS20LTG, BAS2LTG, BAS2DWTG High Voltage Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Continuous Reverse Voltage Rating Symbol
More informationFeatures. R DS(on) = 25 C unless otherwise noted. Symbol Parameter Q2 Q1 Units
Dual Notebook Power Supply N-Channel PowerTrench SyncFet September General Description The is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide
More informationD D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 25 V V GS Gate to Source Voltage (Note 4) ±20 V
FMC5C N-Channel ual Cool TM 33 PowerTrench yncfet TM 5 V, A, 3.5 mω Features ual Cool TM Top ide Cooling PQFN package Max r (on) = 3.5 mω at V G = V, I =.5 A Max r (on) =.7 mω at V G =.5 V, I = 8 A High
More informationNGTB40N120FL2WG. IGBT - Field Stop II. 40 A, 1200 V V CEsat = 2.0 V E off = 1.10 mj
NGTBNFLWG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching
More informationNTP45N06L, NTB45N06L. Power MOSFET 45 Amps, 60 Volts. Logic Level, N Channel TO 220 and D 2 PAK. 45 AMPERES, 60 VOLTS R DS(on) = 28 m
NTP5N6L, NTB5N6L Power MOSFET 5 Amps, 6 Volts Logic Level, NChannel TO and D PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge
More information-3.3A -2.8A. Part Number Case Packaging DMC2057UVT-7 TSOT / Tape & Reel DMC2057UVT-13 TSOT / Tape & Reel
YM COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) N-Channel V P-Channel -V I D T A = +5 C 4mΩ @ V GS= 4.5V 4.A mω @ V GS=.5V 3.5A 7mΩ @ V GS= -4.5V mω @ V GS= -.5V -3.3A
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More informationNXH160T120L2Q1PG, NXH160T120L2Q1SG. Q1PACK Module
NXH6TLQPG, NXH6TLQSG QPACK Module This high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes. Features Extremely Efficient Trench with Fieldstop Technology
More informationDual N & P-Channel Enhancement Mode Field Effect Transistor. Features R DS(ON) = V GS = 4.5 V G2 6 Q1(N) TA=25 o C unless otherwise noted
Dual N & P-Channel Enhancement Mode Field Effect Transistor May General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild s proprietary, high cell
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed to provide voltage
More informationNUD3160, SZNUD3160. Industrial Inductive Load Driver
Industrial Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
More informationonlinecomponents.com
MMBZ5xxBLT Series, SZMMBZ5xxBLTG Series Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More informationBC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor
BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface
More informationNTD32N06L. Power MOSFET 32 Amps, 60 Volts. Logic Level, N-Channel DPAK
NTDN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features
More informationNTQD6866R2G. Power MOSFET 6.9 Amps, 20 Volts N Channel TSSOP 8 Features. 6.9 AMPERES 20 VOLTS 30 V GS = 4.5 V
Power MOSFET.9 Amps, Volts NChannel TSSOP Features New Low Profile TSSOP Package Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery
More informationNTB25P06, NVB25P06. Power MOSFET. 60 V, 27.5 A, P Channel D 2 PAK
NTB25P6, NB25P6 Power OSFET 6, 27.5 A, PChannel D 2 PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features AEC Q Qualified
More informationMJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS
NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS s for which the
More information430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View
DMCDSVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BV DSS R DS(ON) Max Q V Q -5V I D Max T A = +5 C.7Ω @ V GS = V 57mA Ω @ V GS =.5V Ω @ V GS = -V Ω @ V GS = -5V Description and
More informationMUR3020PTG SUR83020PTG MUR3040PTG MUR3060PTG SUR83060PTG. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 30 AMPERES, VOLTS
MUR00PTG, SUR00PTG, MUR00PTG, MUR00PTG, SUR00PTG SWITCHMODE Power Rectifiers These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More informationV N (8) V N (7) V N (6) GND (5)
4-Channel Low Capacitance Dual-Voltage ESD Protection Array Features Three Channels of Low Voltage ESD Protection One Channel of High Voltage ESD Protection Provides ESD Protection to IEC61000 4 2 Level
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationMMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount
MMBZ5BLT Series Preferred Device Zener Voltage Regulators 5 mw SOT Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT package. These devices are designed
More information2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS
N413, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit N413 N413 V CEO 5 V CBO 4 EmitterBase
More informationBC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNL17SV16. Ultra-Low Voltage Buffer
N7S6 Ultra-ow oltage Buffer The N7S6X5T is an ultra high performance single Buffer fabricated in sub micron silicon gate 0.35 m technology with excellent performance down to 0.9. This device is ideal for
More informationMMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon
MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
More informationP2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features These are Pb -Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 6 CollectorBase Voltage V CBO 6 EmitterBase Voltage V EBO Collector
More informationT95N02R. Power MOSFET 95 Amps, 24 Volts. N Channel DPAK
NTD95NR Power MOSFET 95 mps, Volts N Channel DPK Features High Power and Current Handling Capability Fast Switching Performance Low R DS(on) to Minimize Conduction Loss Low Gate Charge to Minimize Switching
More informationPHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.
M3D87 Rev. 2 3 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT223.
More informationPDM6UT20V08E N-Channel and P-Channel,20V,Small signal MOSFET
N-Channel and P-Channel,2V,Small signal MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D1 G2 S2 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@
More information2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS
, Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in lineoperated equipment such as audio output amplifiers; lowcurrent, highvoltage converters; and AC line relays.
More information2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device Amplifier Transistors PNP Silicon Features These are PbFree Devices* MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO 1 Collector Base oltage CBO 16 Emitter Base oltage
More informationPPM3T60V2 P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 0.11 @ V GS =-10V -60 0.13 @ V GS =-4.5V
More information