Features. T A =25 o C unless otherwise noted

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1 NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 8mA DC and can deliver current up to A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features.8A, 6V. R DS(ON) = 5 V GS = V Voltage controlled p-channel small signal switch High density cell design for low R DS(ON) High saturation current D D S SOT- G G S Absolute Maximum Ratings T A =5 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 6 V V GSS Gate-Source Voltage ± V I D Drain Current Continuous (Note ).8 A P D Pulsed Maximum Power Dissipation (Note ).6 W Derate Above 5 C.9 mw/ C T J, T STG Operating and Storage Junction Temperature Range 55 to +5 C T L Maximum Lead Temperature for Soldering Purposes, /6 from Case for Seconds C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note ) 5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 65D NDS65 7 8mm units Semiconductor Components Industries, LLC. September-7, Rev. Publication Order Number: NDS65/D

2 Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = µa 6 V BVDSS T J Breakdown Voltage Temperature Coefficient I D = µa,referenced to 5 C I DSS Zero Gate Voltage Drain Current V DS = 8 V, V GS = V µa V DS = 8 V,V GS = V T J = 5 C 5 µa I GSS Gate Body Leakage. V GS = ± V, V DS = V ± na 5 mv/ C NDS65 On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa.7 V VGS(th) T J Gate Threshold Voltage Temperature Coefficient I D = 5 µa,referenced to 5 C mv/ C R DS(on) Static Drain Source V GS = V, I D =.5 A. 5. Ω On Resistance V GS =.5 V, I D =.5 A V GS = V,I D =.5 A,T J =5 C I D(on) On State Drain Current V GS = V, V DS = V.6 A g FS Forward Transconductance V DS = V, I D =. A.7. S Dynamic Characteristics C iss Input Capacitance V DS = 5 V, V GS = V, 79 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf R G Gate Resistance V GS = 5 mv, f =. MHz Ω Switching Characteristics (Note ) t d(on) Turn On Delay Time V DD = 5 V, I D =. A,.5 5 ns t r Turn On Rise Time V GS = V, R GEN = 6 Ω 6..6 ns t d(off) Turn Off Delay Time ns t f Turn Off Fall Time ns Q g Total Gate Charge V DS = 8 V, I D =.5 A,.8.5 nc Q gs Gate Source Charge V GS = V. nc Gate Drain Charge. nc Q gd Drain Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain Source Diode Forward Current.8 A V SD Drain Source Diode Forward V GS = V, I S =.5 A(Note ).8.5 V Voltage t rr Diode Reverse Recovery Time I F =.5A 7 ns Diode Reverse Recovery Charge d if /d t = A/µs (Note ) 5 nc Q rr Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a minimum pad.. Scale : on letter size paper. Pulse Test: Pulse Width µs, Duty Cycle.%

3 Typical Characteristics NDS V GS =-V -6.V -.5V -.V -.5V -.V -.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS =-.V -.5V -.V -.5V -6.V -V 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -.5A V GS = -V T J, JUNCTION TEMPERATURE ( o C) R DS(ON), ON-RESISTANCE (OHM) 5 I D = -.5A T A = 5 o C T A = 5 o C 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage V DS = -V T A = -55 o C 5 o C 5 o C -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = 5 o C 5 o C -55 o C V GS, GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

4 Typical Characteristics -V GS, GATE-SOURCE VOLTAGE (V) I D = -.5A V DS = -V -V 8-8V Q g, GATE CHARGE (nc) CAPACITANCE (pf) 8 6 C RSS C OSS C ISS 5 6 -V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V NDS65 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics... R DS(ON) LIMIT V GS = -V R θja = 5 o C/W T A = 5 o C us ms ms ms s s DC. -V DS, DRAIN-SOURCE VOLTAGE (V) P(pk), PEAK TRANSIENT POWER (W) 5.. t, TIME (sec) R θja = 5 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D = t, TIME (sec) Figure. Transient Thermal Response Curve. R θja (t) = r(t) * R θja R θja = 5 o C/W P(pk) Thermal characterization performed using the conditions described in Note a. Transient thermal response will change depending on the circuit board design. t t T J - T A = P * R θja (t) Duty Cycle, D = t / t

5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative

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