ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

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1 ISL9V536S3S / ISL9V536P3 / ISL9V536S3 cospark TM 5mJ, 36V, N-Channel Ignition IBT eneral Description The ISL9V536S3S, ISL9V536P3, and ISL9V536S3 are the next generation IBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-22 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components. cospark devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type Package JDC TO-263AB D²-Pak JDC TO-22AB JDC TO-262AA C C Applications Automotive Ignition Coil Driver Circuits Coil-On Plug Applications Features Industry Standard D 2 -Pak package SCIS nergy = 5mJ at T J = 25 o C Logic Level ate Drive Symbol AT R 1 R 2 October 24 COLLCTOR ISL9V536S3S / ISL9V536P3 / ISL9V536S3 COLLCTOR (FLAN) COLLCTOR (FLAN) MITTR Device Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units BV CR Collector to mitter Breakdown Voltage (I C = 1 ma) 39 V BV CS mitter to Collector Voltage - Reverse Battery Condition (I C = 1 ma) 24 V SCIS25 At Starting, I SCIS = 38.5A, L = 67 µhy 5 mj SCIS15 At Starting T J = 15 C, I SCIS = 3A, L = 67 µhy 3 mj I C25 Collector Current Continuous, At T C = 25 C, See Fig 9 46 A I C11 Collector Current Continuous, At T C = 11 C, See Fig 9 31 A V M ate to mitter Voltage Continuous ±1 V P D Power Dissipation Total T C = 25 C 25 W Power Dissipation Derating T C > 25 C 1.67 W/ C T J Operating Junction Temperature Range -4 to 175 C T ST Storage Junction Temperature Range -4 to 175 C T L Max Lead Temp for Soldering (Leads at 1.6mm from Case for 1s) 3 C T pkg Max Lead Temp for Soldering (Package Body for 1s) 26 C SD lectrostatic Discharge Voltage at 1pF, 15Ω 4 kv 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISl9V536P3 / ISL9V536S3 Rev. C3, October 24

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V536S ISL9V536S3ST TO-263AB 33mm 24mm 8 V536P ISL9V536P3 TO-22AA Tube N/A 5 V536S ISL9V536S3 TO-262AA Tube N/A 5 V536S ISL9V536S3S TO-263AB Tube N/A 5 lectrical Characteristics T A = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV CR Collector to mitter Breakdown Voltage I C = 2mA, V =, R = 1KΩ, See Fig. 15 T J = -4 to 15 C BV CS Collector to mitter Breakdown Voltage I C = 1mA, V =, R =, See Fig. 15 T J = -4 to 15 C V V BV CS mitter to Collector Breakdown Voltage I C = -75mA, V = V, V T C = 25 C BV S ate to mitter Breakdown Voltage I S = ± 2mA ±12 ±14 - V I CR Collector to mitter Leakage Current V CR = 25V, T C = 25 C µa R = 1KΩ, See Fig. 11 T C = 15 C ma I CS mitter to Collector Leakage Current V C = 24V, See T C = 25 C ma Fig. 11 T C = 15 C ma R 1 Series ate Resistance Ω R 2 ate to mitter Resistance 1K - 3K Ω ISL9V536S3S / ISL9V536P3 / ISL9V536S3 On State Characteristics V C(SAT) Collector to mitter Saturation Voltage I C = 1A, V = 4.V V C(SAT) Collector to mitter Saturation Voltage I C = 15A, T C = 25 C, See Fig V T C = 15 C V Dynamic Characteristics Q (ON) ate Charge I C = 1A, V C = 12V, V = 5V, See Fig nc V (TH) ate to mitter Threshold Voltage I C = 1.mA, T C = 25 C V V C = V, T C = 15 C V See Fig. 1 V P ate to mitter Plateau Voltage I C = 1A, V C = 12V V Switching Characteristics t d(on)r Current Turn-On Delay Time-Resistive V C = 14V, R L = 1Ω, µs t rr Current Rise Time-Resistive V = 5V, R = 1KΩ µs, See Fig. 12 t d(off)l Current Turn-Off Delay Time-Inductive V C = 3V, L = 2mH, µs t fl Current Fall Time-Inductive V = 5V, R = 1KΩ µs, See Fig. 12 SCIS Self Clamped Inductive Switching, L = 67 µh, R = 1KΩ, V = 5V, See Fig. 1 & mj Thermal Characteristics R θjc Thermal Resistance Junction-Case TO-263, TO-22, TO C/W 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

3 Typical Characteristics I SCIS, INDUCTIV SWITCHIN CURRNT (A) T J = 15 C R = 1KΩ, V = 5V,V dd = 14V SCIS Curves valid for V clamp Voltages of <39V t CLP, TIM IN CLAMP (µs) 3 Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp V = 5.V V = 3.7V V = 8.V I C = 6A V = 4.V I SCIS, INDUCTIV SWITCHIN CURRNT (A) T J = 15 C R = 1KΩ, V = 5V,V dd = 14V SCIS Curves valid for V clamp Voltages of <39V L, INDUCTANC (mhy) Figure 2. Self Clamped Inductive Switching Current vs Inductance V = 5.V V = 8.V V = 3.7V V = 4.V I C = 1A ISL9V536S3S / ISL9V536P3 / ISL9V536S3 T J, JUNCTION TMPRATUR ( C) Figure 3. Collector to mitter On-State Voltage vs Junction Temperature I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V = 5.V V = 4.V V = 3.7V T J = - 4 C Figure 5. Collector Current vs Collector to mitter On-State Voltage T J, JUNCTION TMPRATUR ( C) Figure 4.Collector to mitter On-State Voltage vs Junction Temperature I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V = 5.V V = 4.V V = 3.7V Figure 6. Collector Current vs Collector to mitter On-State Voltage 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

4 Typical Characteristics (Continued) I C, COLLCTOR TO MITTR CURRNT (A) V = 8.V V = 5.V V = 4.V V = 3.7V T J = 175 C Figure 7. Collector to mitter On-State Voltage vs Collector Current I C, DC COLLCTOR CURRNT (A) V = 4.V I C, COLLCTOR TO MITTR CURRNT (A) V TH, THRSHOLD VOLTA (V) DUTY CYCL <.5%, V C = 5V PULS DURATION = 25µs T J = 175 C T J = -4 C V, AT TO MITTR VOLTA (V) Figure 8. Transfer Characteristics V C = V I C = 1mA ISL9V536S3S / ISL9V536P3 / ISL9V536S T C, CAS TMPRATUR ( C) Figure 9. DC Collector Current vs Case Temperature T J, JUNCTION TMPRATUR ( C) Figure 1. Threshold Voltage vs Junction Temperature 1 V CS = 24V 2 18 I C = 6.5A, V = 5V, R = 1KΩ Resistive t OFF LAKA CURRNT (µa) V CS = 3V V CS = 25V SWITCHIN TIM (µs) Inductive t OFF Resistive t ON T J, JUNCTION TMPRATUR ( C) Figure 11. Leakage Current vs Junction Temperature T J, JUNCTION TMPRATUR ( C) Figure 12. Switching Time vs Junction Temperature 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

5 Typical Characteristics (Continued) C, CAPACITANC (pf) C IS C RS FRQUNCY = 1 MHz C OS Figure 13. Capacitance vs Collector to mitter Voltage BV CR, BRAKDOWN VOLTA (V) I CR = 1mA V, AT TO MITTR VOLTA (V) T J = 175 C I (RF) = 1mA, R L =.6Ω, V C = 12V V C = 6V Q, AT CHAR (nc) Figure 14. ate Charge T J = - 4 C ISL9V536S3S / ISL9V536P3 / ISL9V536S R, SRIS AT RSISTANC (kω) Figure 15. Breakdown Voltage vs Series ate Resistance Z thjc, NORMALIZD THRMAL RSPONS SINL PULS P D t 1 DUTY FACTOR, D = t 1 / t 2 PAK T J = (P D X Z θjc X R θjc ) + T C t 2 T 1, RCTANULAR PULS DURATION (s) Figure 16. IBT Normalized Transient Thermal Impedance, Junction to Case 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

6 Test Circuits and Waveforms PULS N R Figure 17. Inductive Switching Test Circuit VARY t P TO OBTAIN RQUIRD PAK I AS V S R DUT C L V C L DUT V C + V DD - 5V R = 1KΩ DUT + V C - Figure 18. t ON and t OFF Switching Test Circuit I AS t P C R or L BV CS LOAD V C V DD ISL9V536S3S / ISL9V536P3 / ISL9V536S3 V t P I AS.1Ω t AV Figure 19. nergy Test Circuit Figure 2. nergy Waveforms 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

7 SPIC Thermal Model RV 1 May 22 ISL9V536S3S / ISL9V3536P3 / ISL9V536S3 CTHRM1 th 6 4.e2 CTHRM e-3 CTHRM e-2 CTHRM e-1 CTHRM e-1 CTHRM6 2 tl 1.6e-2 RTHRM1 th 6 1.e-2 RTHRM e-1 RTHRM e-1 RTHRM e-2 RTHRM e-2 RTHRM6 2 tl 1.9e-2 SABR Thermal Model SABR thermal model ISL9V536S3S / ISL9V536P3 / ISL9V536S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.e2 ctherm.ctherm2 6 5 = 3.6e-3 ctherm.ctherm3 5 4 = 4.9e-2 ctherm.ctherm4 4 3 = 3.2e-1 ctherm.ctherm5 3 2 = 3.e-1 ctherm.ctherm6 2 tl = 1.6e-2 RTHRM1 RTHRM2 RTHRM3 RTHRM4 th JUNCTION CTHRM1 CTHRM2 CTHRM3 CTHRM4 ISL9V536S3S / ISL9V536P3 / ISL9V536S3 rtherm.rtherm1 th 6 = 1.e-2 rtherm.rtherm2 6 5 = 1.4e-1 rtherm.rtherm3 5 4 = 1.e-1 rtherm.rtherm4 4 3 = 9.e-2 rtherm.rtherm5 3 2 = 9.4e-2 rtherm.rtherm6 2 tl = 1.9e-2 } RTHRM5 3 CTHRM5 2 RTHRM6 CTHRM6 tl CAS 24 Fairchild Semiconductor Corporation ISL9V536S3S / ISL9V536P3 / ISL9V536S3 Rev. C3, October 24

8 TRADMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACx ActiveArray Bottomless CoolFT CROSSVOLT DOM cospark 2 CMOS nsigna FACT FACT Quiet Series DISCLAIMR FAIRCHILD SMICONDUCTOR RSRVS TH RIHT TO MAK CHANS WITHOUT FURTHR NOTIC TO ANY PRODUCTS HRIN TO IMPROV RLIABILITY, FUNCTION OR DSIN. FAIRCHILD DOS NOT ASSUM ANY LIABILITY ARISIN OUT OF TH APPLICATION OR US OF ANY PRODUCT OR CIRCUIT DSCRIBD HRIN; NITHR DOS IT CONVY ANY LICNS UNDR ITS PATNT RIHTS, NOR TH RIHTS OF OTHRS. LIF SUPPORT POLICY FAIRCHILD S PRODUCTS AR NOT AUTHORIZD FOR US AS CRITICAL COMPONNTS IN LIF SUPPORT DVICS OR SYSTMS WITHOUT TH XPRSS WRITTN APPROVAL OF FAIRCHILD SMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DFINITIONS Definition of Terms FAST FASTr FPS FRFT lobaloptoisolator TO HiSeC I 2 C i-lo ImpliedDisconnect Across the board. Around the world. The Power Franchise Programmable Active Droop ISOPLANAR LittleFT MICROCOUPLR MicroFT MicroPak MICROWIR MSX MSXPro OCX OCXPro OPTOLOIC OPTOPLANAR PACMAN POP Power247 Powerdge PowerSaver PowerTrench QFT QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILNT SWITCHR SMART START SPM 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Stealth SuperFT SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFT TinyLogic TINYOPTO TruTranslation UHC UltraFT VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I13

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description The ISL9V5036S3S, ISL9V5036P3, and ISL9V503

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description The ISL9V5036S3S, ISL9V5036P3, and ISL9V503 cospark mj, 36V, N-Channel Ignition IBT eneral Description The ISL9V36S3S, ISL9V36P3, and ISL9V36S3 are the next generation IBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-2