4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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1 PACKAGE HAA84 SCHEMATIC 4 COLLECTOR EMITTER DESCRIPTION The HAA84 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. The HA67 and HA87 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. HA67 & HA87 SCHEMATIC ANODE 4 COLLECTOR FEATURES Compact 4-pin package Current transfer ratio in selected groups: HAA84: 2-3% HA87: 5-6% HAA84A: 5-5% HA87A: 8-6% HA67A: 4%-8% HA87B: 3-26% HA67B: 63%-25% HA87C: 2-4% HA67C: %-2% HA87D: 3-6% HA67D: 6%-32% Minimum BV CEO of 7V guaranteed APPLICATIONS HAA84 Series AC line monitor Unknown polarity DC sensor Telephone line interface HA67 and HA87 Series Power supply regulators Digital logic inputs Microprocessor inputs CATHODE 2 3 EMITTER Page of 9
2 TOTAL DEVICE Parameter Symbol Device Value Units Storage Temperature T STG All -55 to +5 C Operating Temperature T OPR All -55 to + C Lead Solder Temperature T SOL All 26 for sec C Total Device Power Dissipation (-55 C to 5 C) P D All 2 mw EMITTER Continuous Forward Current I F All 5 ma Reverse Voltage V R HA67A/B/C/D HA87/A/B/C/D Forward Current - Peak ( µs pulse, 3 pps) I F (pk) All. A LED Power Dissipation (25 C ambient) Derate above 25 C DETECTOR P D All 6 5 V mw.33 mw/ C Collector-Emitter Voltage V CEO All 7 V Emitter-Collector Voltage V ECO HA67A/B/C/D HAA84/A HA87/A/B/C/D Continuous Collector Current I C All 5 ma Detector Power Dissipation (25 C ambient) Derate above 25 C P D All V 5 mw 2. mw/ C ELECTRICAL CHARACTERISTICS (T A = 25 C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Device Min Typ* Max Unit EMITTER (I F = 6 ma) HA67A/B/C/D Input Forward Voltage (I F = 2 ma) V F HA87/A/B/C/D.2.5 V (I F = ±2 ma) HAA84/A.2.5 Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage *Typical values at T A = 25 C. (V R = 6. V) HA67A/B/C/D I R (V R = 5. V) HA87/A/B/C/D. µa (I C =. ma, I F = ) BV CEO ALL 7 V (I E = µa, I F = ) BV ECO HA67A/B/C/D 7 HAA84/A 6 HA87/A/B/C/D 6 V HAA84/A, HA87/A/B/C/D, Collector-Emitter Dark Current (V CE = V, I F = ) I CEO HA67C/D na HA67A/B 5 Collector-Emitter Capacitance (V CE = V, f = MHz) C CE ALL 8 pf Page 2 of 9
3 TRANSFER CHARACTERISTICS (T A = 25 C Unless otherwise specified.) DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit Current Transfer Ratio Collector-Emitter Saturation Voltage AC Characteristic (I F = ± ma, V CE = 5 V) (note ) HAA % (I F = ± ma, V CE = 5 V) (note ) HAA84A 5 5 % (I F = ma, V CE = 5 V) (note ) (I F = 5 ma, V CE = 5 V) (note ) (I F = ma, V CE = 5 V) (note ) (I C = ma, I F = ±2 ma) (I C = 2.5 ma, I F = ma) (I C = ma, I F = 2 ma) CTR HA67A 4 8 % HA67B % HA67C 2 % HA67D 6 32 % HA % HA87A 8 6 % HA87B 3 26 % HA87C 2 4 % HA87D 3 6 % HA67A 3 % HA67B 22 % HA67C 34 % HA67D 56 % V CE (SAT) HA67A/B/C/D.4 HAA84/A.2 HA87/A/B/C/D.2 Rise Time (I C = 2 ma, V CE = 2 V, R L = Ω) (note 2) t r ALL µs Fall Time (I C = 2 ma, V CE = 2 V, R L = Ω) (note 2) t f ALL µs V ISOLATION CHARACTERISTICS Characteristic Test Conditions Symbol Min Typ* Max Units Input-Output Isolation Voltage (note 3) f = 6Hz, t = min V ISO 53 Vac(rms) Isolation Resistance (V I-O = 5 VDC) R ISO Ω Isolation Capacitance (V I-O =, f = MHz) C ISO.5 pf *Typical values at T A = 25 C. NOTES. Current Transfer Ratio (CTR) = I C /I F x %. 2. For test circuit setup and waveforms, refer to Figure For this test, Pins and 2 are common, and Pins 3 and 4 are common. Page 3 of 9
4 NORMALIZED CTR CTR IF = 5 ma, VCE = 5 V, TA = 25 C Fig. Normalized CTR vs. Forward Current I F - FORWARD CURRENT (ma) 3 NORMALIZED CTR CTR IF = 5 ma, VCE = 5 V, TA = 25 C Fig. 2 Normalized CTR vs. Ambient Temperature.2 I F = ma I F = 5 ma T A - AMBIENT TEMPERATURE ( C) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature I F = 2 ma I C = ma V F - FORWARD VOLTAGE (V) Fig. 4 Forward Voltage vs. Forward Current T = -55 C T = 25 C T = C T A - AMBIENT TEMPERATURE ( C) I F - FORWARD CURRENT (ma) 25 Fig. 5 Collector Current vs. Collector-Emitter Voltage IC - COLLECTOR CURRENT (ma) I F = 2 ma I F = ma I F = 5 ma I F = ma V CE - COLLECTOR-EMITTER VOLTAGE (V) Page 4 of 9
5 ICEO - COLLECTOR-EMITTER CURRENT (µa) Fig. 6 Collector Leakage Current vs. Ambient Temperature V CE = V Tr/ Tf- RISE AND FALL TIME (µs).. I F = 5 ma V CC = 5 V T A = 25 C Fig. 7 Rise and Fall Time vs. Load Resistor t r toff t on t f T A - AMBIENT TEMPERATURE ( C) R - LOAD RESISTOR (KV) Figure 8. Switching Time Test Circuit and Waveforms TEST CIRCUIT WAVE FORMS I F V CC = V I C R L = Ω INPUT PULSE INPUT OUTPUT % 9% OUTPUT PULSE Adjust I F to produce IC = 2 ma t r t f Recommended Thermal Reflow Profile for Surface Mount DIP Package Temperature ( C) C: sec to 4 sec 225 C 5 Time > 83 C: 2 sec to 8 sec Time (Min) Page 5 of 9
6 Package Dimensions (Through Hole) Package Dimensions (Surface Mount).27 (6.86).25 (6.35).27 (6.86).25 (6.35) SEATING PLANE.54 (3.9).2 (3.5). (2.54).9 (4.83).75 (4.45).2 (5.8).5 (2.92).2 (.5) MIN 5.27 (6.86).25 (6.35).3 (7.62) typ.6 (.4).8 (.2) SEATING PLANE.7 (.78).45 (.4). (2.54).9 (4.83).75 (4.45).2 (5.8).5 (2.92).2 (.5) MIN.22 (.56).6 (.4) Lead Coplanarity.4 (.) MAX.3 (7.62).35 (8.) MIN.45 (.3) MAX.6 (.4).8 (.2) Package Dimensions (.4 Lead Spacing) Footprint Dimensions (Surface Mount).7 (.78).27 (6.86).25 (6.35).6 (.52) SEATING PLANE.9 (4.83).75 (4.45).2 (5.8).5 (2.92).27 (6.86).25 (6.35).45 (.54).295 (7.49). (2.54).3 (.76).54 (3.9).2 (3.5).4 (.) MIN. (2.54).4 (.6) to 5.6 (.4).8 (.2) NOTE All dimensions are in inches (millimeters) Page 6 of 9
7 ORDERING INFORMATION Option Order Entry Identifier Description S.S Surface Mount Lead Bend SD.SD Surface Mount; Tape and reel W.W.4" Lead Spacing 3.3 VDE 884 3W.3W VDE 884,.4" Lead Spacing 3S.3S VDE 884, Surface Mount 3SD.3SD VDE 884, Surface Mount, Tape & Reel MARKING INFORMATION 4 5 V X YY T Definitions Fairchild logo 2 Device number VDE mark (Note: Only appears on parts ordered with VDE 3 option See order entry table) 4 One digit year code 5 Two digit work week ranging from to 53 6 Assembly package code Page 7 of 9
8 Carrier Tape Specifications 5. ±.2.3 ±.5 4. ±. 2. ±. 4. ±. Ø.55 ±.5.75 ±. 3.2 ± ± ±. 6. ±.3. MAX.3 ±.2 Ø.6 ±. User Direction of Feed NOTE All dimensions are in millimeters Page 8 of 9
9 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 9 of 9
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