FCP7N60/FCPF7N60/FCPF7N60YDTU

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Features 650V @T J = 150 C Typ. Rds(on)=0.53Ω Ultra low gate charge (typ. Qg=25nC) Low effective output capacitance (typ. Coss.

1 Features J = 150 C Typ. Rds(on)=0.53Ω Ultra low gate charge (typ. Qg=25nC) Low effective output capacitance (typ. Coss.eff=60pF) 100% avalanche tested RoHS Compliant Description December 2008 SuperFET TM SuperFET TM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G D S TO-220 FCP Series G D S TO-220F FCPF Series G S Absolute Maximum Ratings Symbol Parameter FCP7N60 FCPF7N60 Unit S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 21 21* A S Gate-Source voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 230 mj I AR Avalanche Current (Note 1) 7 A E AR Repetitive Avalanche Energy (Note 1) 8.3 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics * 4.4* A A W W/ C Symbol Parameter FCP7N60 FCPF7N60 Unit R θjc Thermal Resistance, Junction-to-Case C/W R θja Thermal Resistance, Junction-to-Ambient C/W 2008 Fairchild Semiconductor Corporation 1

2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCP7N60 FCP7N60 TO FCPF7N60 FCPF7N60 TO-220F FCPF7N60 FCPF7N60YDTU TO-220F (Forming) Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0V, = 250μA, T J = 25 C V = 0V, = 250μA, T J = 150 C V ΔBS Breakdown Voltage Temperature / ΔT J Coefficient = 250μA, Referenced to 25 C V/ C B Drain-Source Avalanche Breakdown Voltage = 0V, = 7A V SS Zero Gate Voltage Drain Current = 600V, = 0V = 480V, T C = 125 C I GSSF Gate-Body Leakage Current, Forward = 30V, = 0V na I GSSR Gate-Body Leakage Current, Reverse = -30V, = 0V na On Characteristics (th) Gate Threshold Voltage =, = 250μA V R DS(on) Static Drain-Source On-Resistance = 10V, = 3.5A Ω g FS Forward Transconductance = 40V, = 3.5A S Dynamic Characteristics C iss Input Capacitance = 25V, = 0V, pf C oss Output Capacitance f = 1.0MHz pf C rss Reverse Transfer Capacitance pf C oss Output Capacitance = 480V, = 0V, f = 1.0MHz pf C oss eff. Effective Output Capacitance = 0V to 400V, = 0V pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300V, = 7A ns t r Turn-On Rise Time R G = 25Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4) ns Q g Total Gate Charge = 480V, = 7A nc Q gs Gate-Source Charge = 10V nc Q gd Gate-Drain Charge (Note 4) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current A I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage = 0V, I S = 7A V t rr Reverse Recovery Time = 0V, I S = 7A ns Q rr Reverse Recovery Charge di F /dt =100A/μs μc μa μa NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 3.5A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 7A, di/dt 200A/μs, V DD BS, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2

3 Typical Performance Characteristics Figure 1. On-Region Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 1, Drain-Source Voltage [V] μ s Pulse Test 2. T C = Figure 2. Transfer Characteristics Note 1. = 40V μ s Pulse Test , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.0 R DS(ON) [Ω ], Drain-Source On-Resistance = 10V = 20V Note : T = 25 J R, Reverse Drain Current [A] = 0V μ s Pulse Test V SD, Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitance [pf] C rss C iss C oss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] = 100V = 250V = 400V Q G, Total Gate Charge [nc] Note : I = 7A D 3

4 Typical Performance Characteristics (Continued) BS, (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature = 0 V 2. = 250 μ A T J, Junction Temperature [ o C] R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. = 3.5 A T J, Junction Temperature [ o C] Figure 9-1. Maximum Safe Operating Area for FCP7N60 Figure 9-2. Maximum Safe Operating Area for FCPF7N Operation in This Area is Limited by R DS(on) 10 2 Operation in This Area is Limited by R DS(on) T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms DC T C = 25 o C 2. T J = 150 o C 3. Single Pulse 100 us 1 ms 10 ms 100 ms DC , Drain-Source Voltage [V] , Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature T C, Case Temperature [ ] 4

5 Typical Performance Characteristics (Continued) Figure Transient Thermal Response Curve for FCP7N60 Z θ JC (t), Thermal Response 10-2 D= single pulse 1. Z θ JC (t) = 1.5 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1, Square W ave Pulse Duration [sec] t 1 t 2 Figure Transient Thermal Response Curve for FCPF7N60 D=0.5 Z θ JC (t), Thermal Response single pulse 1. Z θ JC (t) 4.0 /W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t t t 1, Square W ave Pulse Duration [sec] 5

6 12V 200nF 3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT DUT 10V Q gs Q g Q gd Charge Resistive Switching Test Circuit & Waveforms R L 90% R G V DD 10V DUT 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L BS E AS = LI 2 AS BS -V DD BS I AS R G V DD (t) 10V DUT V DD (t) t p t p Time 6

7 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + I S D V D S _ L D r i v e r R G S a m e T y p e a s D U T V D D V G S d v / d t c o n t r o l l e d b y R G I S D c o n t r o l l e d b y p u l s e p e r i o d V G S ( D r iv e r ) G a t e P u l s e W i d t h D = G a t e P u l s e P e r i o d 1 0 V I S D ( D U T ) I F M, B o d y D i o d e F o r w a r d C u r r e n t d i / d t V D S ( D U T ) I R M B o d y D i o d e R e v e r s e C u r r e n t B o d y D i o d e R e c o v e r y d v / d t V S D V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p 7

8 Mechanical Dimensions TO Dimensions in Millimeters 8

9 Mechanical Dimensions (Continued) ± ±0.10 TO-220F ±0.20 ø3.18 ± ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) ± ±0.30 MAX ±0.10 (30 ) 0.35 ±0.10 # ± TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ± ±0.20 Dimensions in Millimeters 9

10 Mechanical Dimensions (Continued) TO-220F (Y Forming) 10

11 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH * Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR PDP SPM Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW /W /kw at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET The Power Franchise * EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire μserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Farichild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Farichild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 250 V V GSS Gate to Source Voltage ±30 V

Description. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 250 V V GSS Gate to Source Voltage ±30 V FDA33N25 N-Channel MOSFET 250V, 33A, 0.094Ω Features R DS(on) = 0.088Ω ( Typ.)@ V GS = 0V, I D = 6.5A Low gate charge ( Typ. 36nC) Low C rss ( Typ. 35pF) Fast switching Improved dv/dt capability RoHS compliant