Application. Bottom. Pin 1. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage ±20 V

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1 FMC888 N-Channel Power Trench MOFET 3V, 5A, 9mΩ Features Max r (on) = 9mΩ at V G = V, I = 9.A Max r (on) = 3mΩ at V G =.5V, I = 7.A High performance trchnology for extremely low r (on) Termination is Lead-free and RoH Compliant Top Bottom Pin General escription May 8 This N-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Application High side in C - C Buck Converters Notebook battery power management Load switch in Notebook 5 G tm FMC888 N-Channel Power Trench MOFET G Power 33 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V G Gate to ource Voltage ± V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C 5 I -Continuous (ilicon limited) T C = 5 C -Continuous T A = 5 C (Note a) 9. A -Pulsed E A ingle Pulse Avalanche Energy (Note 3) mj Power issipation T P C = 5 C 8 Power issipation T A = 5 C (Note a).3 W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case 6.6 R θja Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FMC888 FMC888 Power 33 3 mm 3 units 8 Fairchild emiconductor Corporation FMC888 Rev.C

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5µA, V G = V 3 V BV T J I Breakdown Voltage Temperature Coefficient Zero Gate Voltage rain Current I = 5µA, referenced to 5 C mv/ C V = V, V G = V T J = 5 C 5 I G Gate to ource Leakage Current V G = ±V, V = V ± na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5µA..9.5 V V G(th) T J r (on) Gate to ource Threshold Voltage Temperature Coefficient tatic rain to ource On Resistance I = 5µA, referenced to 5 C -6 mv/ C V G = V, I = 9.A 6 9 V G =.5V, I = 7.A 3 V G = V, I = 9.A, T J = 5 C 3 g F Forward Transconductance V = 5V, I = 9.A ynamic Characteristics C iss Input Capacitance pf V = 5V, V G = V, C oss Output Capacitance 5 pf f = MHz C rss Reverse Transfer Capacitance 76 5 pf R g Gate Resistance f = MHz.. Ω µa mω FMC888 N-Channel Power Trench MOFET witching Characteristics t d(on) Turn-On elay Time 6 ns t r Rise Time V = 5V, I = 9.A, ns t d(off) Turn-Off elay Time V G = V, R GEN = 6Ω 5 7 ns t f Fall Time ns Total Gate Charge V Q G = V to V nc g(tot) Total Gate Charge V G = V to.5v V = 5V nc Q gs Total Gate Charge I = 9.A.8 nc Q gd Gate to rain Miller Charge. nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I = 9.A (Note ).86. V G = V, I =.6A (Note ).76. t rr Reverse Recovery Time 3 8 ns I F = 9.A, di/dt = A/µs Q rr Reverse Recovery Charge 3 nc NOTE:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. V a. 53 C/W when mounted on a b. 5 C/W when mounted on a in pad of oz copper minimum pad of oz copper. Pulse Test: Pulse Width < 3µs, uty cycle <.%. 3. tarting T J = 5 o C; N-ch: L = mh, I A = 7A, V = 3V, V G = V. FMC888 Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 3 V G = V V G = 6V Figure. I = 9.A V G = V V G =.5V V G = V PULE URATION = 8µs UTY CYCLE =.5%MAX V G = 3.5V V, RAIN TO OURCE VOLTAGE (V) NORMALIZE RAIN TO OURCE ON-REITANCE 3 On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 3.5V V G = V V G = 6V I, RAIN CURRENT(A) PULE URATION = 8µs UTY CYCLE =.5%MAX V G =.5V PULE URATION = 8µs UTY CYCLE =.5%MAX I = 9.A T J = 5 o C T J = 5 o C V G = V 6 8 V G, GATE TO OURCE VOLTAGE (V) FMC888 N-Channel Power Trench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 3 PULE URATION = 8µs UTY CYCLE =.5%MAX V = 5V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A) 6.. V G = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current FMC888 Rev.C 3

4 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE(V) IA, AVALANCHE CURRENT(A) 8 6 I = 9.A Figure 7. V = V V = V Q g, GATE CHARGE(nC) V = 5V 5. 3 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = 5 o C T J = 5 o C T J = o C.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I, RAIN CURRENT (A) f = MHz V G = V Limited by Package V G = V V G =.5V C iss C oss C rss R θjc = 6.6 o C/W T C, CAE TEMPERATURE ( o C) FMC888 N-Channel Power Trench MOFET Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 6 THI AREA I LIMITE BY r (on) µs ms ms ms. INGLE PULE s T J = MAX RATE s R θja = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (s) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation FMC888 Rev.C

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja. UTY CYCLE-ECENING ORER = INGLE PULE R θja = 5 o C/W t, RECTANGULAR PULE URATION (s) Figure 3. Transient Thermal Response Curve P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FMC888 N-Channel Power Trench MOFET FMC888 Rev.C 5

6 imensional Outline and Pad Layout FMC888 N-Channel Power Trench MOFET FMC888 Rev.C 6

7 tm tm tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EcoPARK EfficentMax EZWITCH * Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FlashWriter * FP F-PF FRFET Global Power Resource M Green FP Green FP e-eries GTO IntelliMAX IOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak Millerrive MotionMax Motion-PM OPTOLOGIC OPTOPLANAR PP-PM Power-PM PowerTrench Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world mw at a time martmax MART TART PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upermo The Power Franchise TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire µeres UHC Ultra FRFET UniFET VCX VisualMax * EZWITCH and FlashWriter are trademarks of ystem General Corporation, used under license by Fairchild emiconductor. FMC888 N-Channel Power Trench MOFET ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Preliminary No Identification Needed Obsolete Formative or In esign First Production Full Production Not In Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I3 FMC888 Rev.C 7