Application. Bottom S S S. Symbol Parameter Ratings Units V DS Drain to Source Voltage 150 V V GS Gate to Source Voltage ±20 V

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1 FM86 N-Channel Power Trench MOFET 5 V, 49 A, 8 mω Features Max r (on) = 8 mω at V = V, I = 9.6 A Max r (on) = mω at V = 6 V, I = 8.8 A Advanced Package and ilicon combination for low r (on) and high efficiency ML robust package design % UIL tested RoH Compliant eneral escription November This N-Channel MOFET is produced using Fairchild emiconductor s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application C-C Conversion Top Bottom Pin Power 56 MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 5 V V ate to ource Voltage ± V I -Continuous T A = 5 C (Note a) 9.6 A rain Current -Continuous T C = 5 C 49 -Pulsed E A ingle Pulse Avalanche Energy (Note 3) mj Power issipation T C = 5 C 4 P Power issipation T A = 5 C (Note a).5 W T J, T T Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case. R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FM86 FM86 Power 56 3 mm 3 units Fairchild emiconductor Corporation FM86 Rev.C3

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 μa, V = V 5 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 5 μa, referenced to 5 C mv/ C I Zero ate Voltage rain Current V = V, V = V μa I ate to ource Leakage Current V = ± V, V = V na On Characteristics V (th) ate to ource Threshold Voltage V = V, I = 5 μa V ΔV (th) ΔT J ate to ource Threshold Voltage Temperature Coefficient I = 5 μa, referenced to 5 C - mv/ C V = V, I = 9.6 A 5 8 r (on) tatic rain to ource On Resistance V = 6 V, I = 8.8 A 7 mω V = V, I = 9.6 A, T J = 5 C 8 34 g F Forward Transconductance V = V, I = 9.6 A 33 ynamic Characteristics C iss Input Capacitance 4 75 pf V = 75 V, V = V, C oss Output Capacitance 3 7 pf f = MHz C rss Reverse Transfer Capacitance 6 pf R g ate Resistance. 3 Ω witching Characteristics t d(on) Turn-On elay Time 3 3 ns t r Rise Time V = 75 V, I = 9.6 A, ns t d(off) Turn-Off elay Time V = V, R EN = 6 Ω 7 44 ns t f Fall Time 5.8 ns Total ate Charge V = V to V nc Q g(tot) Total ate Charge V = V to 5 V V = 75 V 8 6 nc Q gs Total ate Charge I = 9.6 A 7.9 nc Q gd ate to rain Miller Charge 7.7 nc rain-ource iode Characteristics V = V, I = A (Note ).69. V ource to rain iode Forward Voltage V V = V, I = 9.6 A (Note ).77.3 t rr Reverse Recovery Time 76 ns I F = 9.6 A, di/dt = A/μs Q rr Reverse Recovery Charge 3 8 nc NOTE:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper b.5 C/W when mounted on a minimum pad of oz copper F F F F. Pulse Test: Pulse Width < 3 μs, uty cycle <. %. 3. E A of mj is based on starting T J = 5 C, L = mh, I A = A, V = 5 V, V = V. % test at L =. mh, I A = 46 A. FM86 Rev.C3

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE V = V Figure. I = 9.6 A V = V V = 6 V V = 5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAE (V) V = 4.5 V V = 4 V NORMALIZE RAIN TO OURCE ON-REITANCE I, RAIN CURRENT (A) On-Region Characteristics Figure. Normalized On-Resistance vs rain Current and ate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V = 4 V V = 4.5 V PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V I = 9.6 A V = 6 V V = V PULE URATION = 8 μs UTY CYCLE =.5% MAX V, ATE TO OURCE VOLTAE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs ate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = -55 o C V, ATE TO OURCE VOLTAE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A).. V = V T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current FM86 Rev.C3 3

4 Typical Characteristics T J = 5 C unless otherwise noted IA, AVALANCHE CURRENT (A) V, ATE TO OURCE VOLTAE (V) I = 9.6 A Figure 7. V = 5 V V = 75 V Q g, ATE CHARE (nc) V = V f = MHz V = V C rss 5. V, RAIN TO OURCE VOLTAE (V) ate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage T J = o C... 5 t AV, TIME IN AVALANCHE (ms) CAPACITANCE (pf) I, RAIN CURRENT (A) Limited by Package R θjc =. o C/W V = 6 V V = V C iss C oss T c, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) 3.. THI AREA I LIMITE BY r (on) INLE PULE T J = MAX RATE R θja = 5 o C/W ms ms ms T A = 5 o C... V, RAIN to OURCE VOLTAE (V) s s C ), PEAK TRANIENT POWER (W) P(PK V = V INLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation FM86 Rev.C3 4

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja. UTY CYCLE-ECENIN ORER = t t INLE PULE NOTE: R θja = 5 o UTY FACTOR: = t /t C/W PEAK T J = P M x Z θja x R θja + T A t, RECTANULAR PULE URATION (sec) Figure 3. Transient Thermal Response Curve P M FM86 Rev.C3 5

6 imensional Outline and Pad Layout FM86 Rev.C3 6

7 tm TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise Cool AccuPower AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FlashWriter * FP F-PF FRFET lobal Power Resource M reen Bridge reen FP reen FP e-eries max TO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak Millerrive MotionMax Motion-PM mwaver OptoHiT OPTOLOIC OPTOPLANAR tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure *Trademarks of ystem eneral Corporation, used under license by Fairchild emiconductor. aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIHT TO MAKE CHANE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIIN OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIHT, NOR THE RIHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITIN POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed Obsolete First Production Full Production Not In Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. FM86 Rev.C3 7 Rev. I6