FDS V P-Channel PowerTrench MOSFET
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1 F4685 4V P-Channel PowerTrench MOFET Features 8. A, 4 V R (ON) =.7 V G = V R (ON) =.35 V G = 4.5 V Fast switching speed High performance trench technology for extremely low R (ON) High power and current handling capability O-8 Pin G Applications Power management Load switch Battery protection General escription June 5 This P-Channel MOFET is a rugged gate version of Fairchild emiconductor s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V V) F4685 4V P-Channel PowerTrench MOFET Absolute Maximum Ratings unless otherwise noted ymbol Parameter Ratings Units V rain-ource Voltage 4 V V G Gate-ource Voltage ± V I rain Current - Continuous (Note a) 8. A - Pulsed 5 P Power issipation for ingle Operation (Note a).5 W (Note b).4 (Note c). T J, T TG Operating and torage Junction Temperature Range 55 to +5 C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θja Thermal Resistance, Junction-to-Ambient (Note c) 5 R θjc Thermal Resistance, Junction-to-Case (Note ) 5 Package Marking and Ordering Information evice Marking evice Reel ize Tape width Quantity F4685 F mm 5 units 5 Fairchild emiconductor Corporation
2 Electrical Characteristics unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain ource Breakdown Voltage V G = V, I = 5 µa 4 V BV T J Breakdown Voltage Temperature Coefficient I = 5 µa, Referenced to 5 C 3 mv/ C I Zero Gate Voltage rain Current V = 3 V, V G = V µa I G Gate Body Leakage V G = ± V, V = V ± na On Characteristics (Note ) V G(th) Gate Threshold Voltage V = V G, I = 5 µa.6 3 V VG(th) T J R (on) Gate Threshold Voltage Temperature Coefficient tatic rain ource On Resistance I = 5 µa, Referenced to 5 C 4.7 mv/ C V G = V, I = 8. A V G = 4.5 V, I = 7 A V G = V, I = 8. A, T J = 5 C g F Forward Transconductance V = 5 V, I = 8. A ynamic Characteristics C iss Input Capacitance V = V, V G = V, 87 pf C oss Output Capacitance f =. MHz 56 pf C rss Reverse Transfer Capacitance 34 pf R G Gate Resistance V G = 5 mv, f = MHz 4 Ω witching Characteristics (Note ) t d(on) Turn On elay Time V = V, I = A, 4 5 ns t r Turn On Rise Time V G = V, R GEN = 6 Ω ns t d(off) Turn Off elay Time 5 8 ns t f Turn Off Fall Time 8 3 ns Q g Total Gate Charge V = V, I = 8. A, 9 7 nc Q gs Gate ource Charge V G = 5 V 5.6 nc Q gd Gate rain Charge 6. nc rain ource iode Characteristics V rain ource iode Forward Voltage V G = V, I =. A (Note ).7. V t rr iode Reverse Recovery Time I F = 8. A, 6 n Q rr iode Reverse Recovery Charge d if /d t = A/µs 5 nc mω F4685 4V P-Channel PowerTrench MOFET Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design.. a) 5 C/W when mounted on a in pad of oz copper b) 5 /W when mounted on a.4 in pad of oz copper c) 5 /W when mounted on a minimum pad. cale : on letter size paper. Pulse Test: Pulse Width < 3µs, uty Cycle <.%
3 Typical Characteristics: R (ON), NORMALIZE RAIN-OURCE ON-REITANCE V G = -V -6.V -4.5V -4.V -3.5V V, RAIN TO OURCE VOLTAGE (V) -3.V Figure. On-Region Characteristics. I = -8.A V G = - V R (ON), NORMALIZE RAIN-OURCE ON-REITANCE R (ON), ON-REITANCE (OHM) V G = - 3.5V -4.V -4.5V -5.V -6.V V -V Figure. On-Resistance Variation with rain Current and Gate Voltage. I = -4.A F4685 4V P-Channel PowerTrench MOFET T J, JUNCTION TEMPERATURE ( C) V G, GATE TO OURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-ource Voltage. 5 V = -5V 4 T A = -55 C 5 C 3 5 C V G, GATE TO OURCE VOLTAGE (V) -I, REVERE RAIN CURRENT (A).... V G = V 5 C -55 C V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with ource Current and Temperature. 3
4 Typical Characteristics: -VG, GATE-OURCE VOLTAGE (V) I = -8.A V = -V Qg, GATE CHARGE (nc) -3V -V Figure 7. Gate Charge Characteristics. R (ON) LIMIT V G = -V Rθ JA = 5 C/W s C ms.. s ms ms -V, RAIN-OURCE VOLTAGE (V) µs CAPACITANCE (pf) P(pk), PEAK TRANIENT POWER (W) C R C O C I V, RAIN TO OURCE VOLTAGE (V) f = MHz V G = V Figure 8. Capacitance Characteristics.... t, TIME (sec) Rθ JA = 5 C/W F4685 4V P-Channel PowerTrench MOFET Figure 9. Maximum afe Operating Area. Figure. ingle Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE.. = R θja(t) = r(t) * R θ JA R θja = 5 C/W t t T J - T A = P * R θja(t) uty Cycle, = t / t..... t, TIME (sec) P(pk) Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note c. Transient thermal response will change depending on the circuit board design. 4
5 TRAEMARK The following are registered and unregistered trademarks Fairchild emiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROVOLT OME EcoPARK E CMO Enigna FACT FACT Quiet eries ICLAIMER FAT FATr FP FRFET GlobalOptoisolator GTO HieC I C i-lo Impliedisconnect Across the board. Around the world. The Power Franchise Programmable Active roop IntelliMAX IOPLANAR LittleFET MICROCOUPLER MicroFET MicroPak MICROWIRE MX MXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerEdge Poweraver PowerTrench QFET Q QT Optoelectronics Quiet eries RapidConfigure RapidConnect µeres ILENT WITCHER MART TART PM tealth uperfet uperot -3 uperot -6 uperot -8 yncfet TinyLogic TINYOPTO TruTranslation UHC UltraFET UniFET VCX FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. F4685 4V P-Channel PowerTrench MOFET LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT TATU EFINITION efinition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product tatus efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. pecifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 5
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P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
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YYWW Green 3V N-CHANNEL ENHANCEMENT MOE MOFET PowerI3333- Product ummary BV 3V escription R (ON) Max.7mΩ @ V G = V.mΩ @ V G =.V I Max T C = + C A A This MOFET is designed to minimize the on-state resistance
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More informationFeatures. Symbol Parameter N-Channel P-Channel Units. Drain-Source Voltage, Power Supply Voltage V V GSS. Gate-Source Voltage, 8-8 V I D
FC6C ual N & P Channel, igital FET General escription These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V
General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,
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YYWW NEW PROUCT Product ummary BV 3V R (ON) max 4.5mΩ @ V G = V 7.mΩ @ V G = 4.5V escription and Applications I max T C = +5 C (Note 9) 5A 5A This MOFET has been designed to minimize the on-state resistance
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AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G
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FDCC FDCC V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored
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NEW PROUCT AVANCE INFORMATION Product ummary BV 3V R (ON) Max 3.8mΩ @ V G = V 6mΩ @ V G = 4.5V escription and Applications I Max T C = +25 C 45A 5A This MOFET is designed to meet the stringent requirements
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P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
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i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
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Features 650V @T J = 150 C Typ. Rds(on)=0.53Ω Ultra low gate charge (typ. Qg=25nC) Low effective output capacitance (typ. Coss.eff=60pF) 100% avalanche tested RoHS Compliant Description December 2008 SuperFET
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P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC 6249-2-2 efinition
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