NDS8852H Complementary MOSFET Half Bridge
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1 February 996 NS885H Complementary MOSFET Half Bridge General escription Features These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, MOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together. N-Channel.A, V, R S(ON) =V. P-Channel -.A, -V, R S(ON) =-V. High density cell design or extremely low R S(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability. V+ P-Gate Vout Vout Vout N-Gate Vout V- Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter N-Channel P-Channel Units V SS rain-source Voltage - V S Gate-Source Voltage - V I rain Current - Continuous (Note a & ). -. A - Pulsed 5 - P Maximum Power issipation (Note a).5 W (Single evice) (Note b). (Note c),t STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja R θjc Thermal Resistance, Junction-to-Ambient (Single evice) (Note a) Thermal Resistance, Junction-to-Case (Single evice) (Note ) 5 C/W 5 C/W 997 Fairchild Semiconductor Corporation NS885H Rev. C
2 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage = V, I = 5 µa N-Ch V = V, I = -5 µa P-Ch - V I SS Zero Gate Voltage rain Current V S = V, = V N-Ch µa = 55 o C 5 µa V S = - V, = V P-Ch - µa = 55 o C -5 µa I SF Gate - Body Leakage, Forward = V, V S = V All na I SR Gate - Body Leakage, Reverse = - V, V S = V All - na ON CHARACTERISTICS (Note ) (th) Gate Threshold Voltage V S =, I = 5 µa N-Ch.7.8 V = 5 o C.7.. V S =, I = -5 µa P-Ch = 5 o C R S(ON) Static rain-source On-Resistance = V, I =. A N-Ch.6.8 Ω = 5 o C.8. =.5 V, I =.8 A.8. = - V, I = -. A P-Ch.. = 5 o C.5. = -.5 V, I = -.8 A.7. I (on) On-State rain Current = V, V S = 5 V N-Ch A = - V, V S = -5 V P-Ch - g FS Forward Transconductance V S = 5 V, I =. A N-Ch 6 S YNAMIC CHARACTERISTICS V S = -5 V, I = -. A P-Ch C iss Input Capacitance N-Channel N-Ch pf V S = 5 V, = V, f =. MHz P-Ch C oss Output Capacitance N-Ch 9 pf P-Channel P-Ch 9 V S = -5 V, = V, C rss Reverse Transfer Capacitance f =. MHz N-Ch 7 pf P-Ch 7 NS885H Rev. C
3 Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time N-Channel N-Ch 5 ns V = V, I = A, P-Ch 9 V GEN = V, R GEN = 6 Ω t r Turn - On Rise Time N-Ch ns P-Channel P-Ch t (off) Turn - Off elay Time V = - V, I = - A, V GEN = - V, R GEN = 6 Ω N-Ch 5 ns P-Ch 9 t f Turn - Off Fall Time N-Ch 5 5 ns P-Ch 8 5 Q g Total Gate Charge N-Channel N-Ch nc V S = V, I =. A, = V P-Ch 5 Q gs Gate-Source Charge P-Channel N-Ch.5 V S = - V, P-Ch.6 I = -. A, = - V Q gd Gate-rain Charge N-Ch.6 RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATIN P-Ch.7 I S Maximum Continuous rain-source iode Forward Current N-Ch. A V S rain-source iode Forward Voltage t rr Reverse Recovery Time N-Channel = V, I F =. A, di F /dt = A/µs Notes: P-Ch -. = V, I S =. A (Note ) N-Ch.8. V = V, I S = -. A (Note ) P-Ch P-Channel = V, I F = -. A, di F /dt = A/µs N-Ch ns P-Ch. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. P (t) = TJ T A = TJ T A = RθJ A(t) RθJ C+RθCA(t) I (t) R S (ON ) TJ Typical R θja using the board layouts shown below on.5"x5" FR- PCB in a still air environment: a. 5 o C/W when mounted on a in pad of oz cpper. b. 5 o C/W when mounted on a. in pad of oz cpper. c. 5 o C/W when mounted on a.6 in pad of oz cpper. a b c Scale : on letter size paper. Pulse Test: Pulse Width < µs, uty Cycle <.%. NS885H Rev. C
4 Typical Electrical Characteristics I, RAIN-SOURCE CURRENT (A) 5 5 V =V I, RAIN-SOURCE CURRENT (A) V = -V V S, RAIN-SOURCE VOLTAGE (V) V, RAIN-SOURCE VOLTAGE (V) S - -5 Figure. N-Channel On-Region Characteristics. Figure. P-Channel On-Region Characteristics. R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 V =.5V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5.5 V = -.5V I, RAIN CURRENT (A) I, RAIN CURRENT (A) - -5 Figure. N-Channel On-Resistance Variation with Gate Voltage and rain Current. Figure. P-Channel On-Resistance Variation with Gate Voltage and rain Current..6.6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 I =.A = V R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE...8 I = -.A = -V , JUNCTION TEMPERATURE ( C) Figure 5. N-Channel On-Resistance Variation with Temperature T J, JUNCTION TEMPERATURE ( C) Figure 6. P-Channel On-Resistance Variation with Temperature. NS885H Rev. C
5 Typical Electrical Characteristics R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 = V T = 5 C J 5 C -55 C R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 V = -V T = 5 C J 5 C -55 C I, RAIN CURRENT (A) I, RAIN CURRENT (A) - -5 Figure 7. N-Channel On-Resistance Variation with rain Current and Temperature. Figure 8. P-Channel On-Resistance Variation with rain Current and Temperature. - I, RAIN CURRENT (A) 8 6 V S = V T = -55 C J 5 C 5 C I, RAIN CURRENT (A) V = -V S T = -55 C J 5 C 5 C 5, GATE TO SOURCE VOLTAGE (V) , GATE TO SOURCE VOLTAGE (V) -6 Figure 9. N-Channel Transfer Characteristics. Figure. P-Channel Transfer Characteristics... V, NORMALIZE th GATE-SOURCE THRESHOL VOLTAGE V S = V I = 5µA V, NORMALIZE th GATE-SOURCE THRESHOL VOLTAGE..9.8 V = V S I = -5µA , JUNCTION TEMPERATURE ( C) , JUNCTION TEMPERATURE ( C) Figure. N-Channel Gate Threshold Variation with Temperature. Figure. P-Channel Gate Threshold Variation with Temperature. NS885H Rev. C
6 SS SS Typical Electrical Characteristics BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = 5µA , JUNCTION TEMPERATURE ( C) Figure. N-Channel Breakdown Voltage Variation with Temperature. BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -5µA T J, JUNCTION TEMPERATURE ( C) Figure. P-Channel Breakdown Voltage Variation with Temperature CAPACITANCE (pf) f = MHz = V C iss C oss C rss CAPACITANCE (pf) f = MHz = V C iss C oss C rss V, RAIN TO SOURCE VOLTAGE (V) S Figure 5. N-Channel Capacitance Characteristics V S, RAIN TO SOURCE VOLTAGE (V) Figure 6. P-Channel Capacitance Characteristics. V, GATE-SOURCE VOLTAGE (V) 8 6 I =.A V S = V V 5V 6 8 Q g, GATE CHARGE (nc) Figure 7. N-Channel Gate Charge Characteristics. -, GATE-SOURCE VOLTAGE (V) 8 6 I = -.A V = -V S -V -5V 6 8 Q g, GATE CHARGE (nc) Figure 8. P-Channel Gate Charge Characteristics. NS885H Rev. C
7 FS S S Typical Electrical and Thermal Characteristics 5 = V 5 = V I, REVERSE RAIN CURRENT (A).5.. T = 5 C J 5 C -55 C -I, REVERSE RAIN CURRENT (A).5.. T = 5 C J 5 C -55 C V, BOY IOE FORWAR VOLTAGE (V) S Figure 9. N-Channel Body iode Forward Voltage Variation with Current and Temperature V S, BOY IOE FORWAR VOLTAGE (V) Figure. P-Channel Body iode Forward Voltage Variation with Current and Temperature. g, TRANSCONUCTANCE (SIEMENS) FS 8 6 V =V S 6 8 I, RAIN CURRENT (A) T = -55 C J 5 C 5 C Figure. N-Channel Transconductance Variation with rain Current and Temperature. g, TRANSCONUCTANCE (SIEMENS) 6 5 V = -V S - I T = -55 C J 5 C - -6, RAIN CURRENT (A) 5 C Figure. P-Channel Transconductance Variation with rain Current and Temperature STEAY-STATE POWER ISSIPATION (W).5 b c.5"x5" FR- Board o T A = 5 C Still Air oz COPPER MOUNTING PA AREA (in ) a Figure. SO-8 Single evice C Power issipation versus Copper Mounting Pad Area. NS885H Rev. C
8 Typical Thermal Characteristics 5 5 I, STEAY-STATE RAIN CURRENT (A) a b c.5"x5" FR- Board o T A = 5 C Still Air = V oz COPPER MOUNTING PA AREA (in ) -I, STEAY-STATE RAIN CURRENT (A) a b c.5"x5" FR- Board o T A = 5 C Still Air = -V oz COPPER MOUNTING PA AREA (in ) Figure. N-Ch Maximum Steady-State rain Current versus Copper Mounting Pad Area. Figure 5. P-Ch Maximum Steady-State rain Current versus Copper Mounting Pad Area. I, RAIN CURRENT (A)... RS(ON) LIMIT V = V SINGLE PULSE R = See Note c θja T A = 5 C s s C ms ms us ms V S, RAIN-SOURCE VOLTAGE (V) -I, RAIN CURRENT (A)... RS(ON) LIMIT V = -V SINGLE PULSE R = See Note c θja T A = 5 C s C ms V S, RAIN-SOURCE VOLTAGE (V) s ms ms us Figure 6. N-Ch Maximum Safe Operating Area. Figure 7. P-Ch Maximum Safe Operating Area..5 =.5 r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE Single Pulse..... t, TIME (sec) R (t) = r(t) * R θja θja R = See Note c θja T J - T = P * R (t) A θja uty Cycle, = t / t Figure 8. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design. P(pk) t t NS885H Rev. C
9 ELECTRO MAGN ETI C, MAG NETIC O R R AIO ACTIVE FI EL S TNR ATE PT NUMBER PEEL STRENGTH MIN gms MAX gms SO-8 Tape and Reel ata and Package imensions SOIC(8lds) Packaging Configuration: Figure. ELECTROSTATIC SENSITIVE EVICES O NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC ES Label Antistatic Cover Tape Static issipative Embossed Carrier Tape Packaging escription: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with,5 units per " or cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 5 units per 7" or 77cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure.) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F6TNR Label Customized Label Note/Comments SOIC (8lds) Packaging Information Packaging Option Standard (no flow code) L86Z F 8Z Packaging type TNR Rail/Tube TNR TNR Qty per Reel/Tube/Bag,5 95, 5 Reel Size " ia - " ia 7" ia Box imension (mm) x6x 5xx8 x6x 8x87x7 Max qty per Box 5,, 8,, Weight per unit (gm) Weight per Reel (kg) F85 NS 9959 F85 NS 9959 F85 NS 9959 SOIC-8 Unit Orientation F85 NS 9959 F85 NS 9959 Pin mm x mm x 6mm Standard Intermediate box F6TNR Label sample LOT: CBVK7B9 QTY: 5 F6TNLabel ES Label F6TN Label FSI: FS995A SPEC: ES Label /C: 98 QTY: SPEC REV: /C: QTY: CPN: N/F: F (F6TNR) SOIC(8lds) Tape Leader and Trailer Configuration: Figure. Carrier Tape Cover Tape Trailer Tape 6mm minimum or 8 empty pockets Components Leader Tape 68mm minimum or empty pockets July 999, Rev. B
10 SO-8 Tape and Reel ata and Package imensions, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure. T P E F K Wc B E W Tc A P User irection of Feed imensions are in millimeter Pkg type A B W E E F P P K T Wc Tc SOIC(8lds) (mm) 6.5 +/ /-.. +/ / / /-..5 min 5.5 +/ /-.. +/-.. +/-..5 +/ /-..6 +/-. Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-8 rotational and lateral movement requirements (see sketches A, B, and C). deg maximum.5mm maximum B Typical component cavity center line.5mm maximum deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation SOIC(8lds) Reel Configuration: Figure. A Sketch B (Top View) Component Rotation Typical component center line Sketch C (Top View) Component lateral movement W Measured at Hub im A Max im A max im N 7" iameter Option See detail AA B Min im C See detail AA W im min " iameter Option W max Measured at Hub ETAIL AA Tape Size Reel Option imensions are in inches and millimeters im A im B im C im im N im W im W im W (LSL-USL) mm 7" ia / / /-.. +/ mm " ia / / /-.. +/ Fairchild Semiconductor Corporation July 999, Rev. B
11 SO-8 Tape and Reel ata and Package imensions, continued SOIC-8 (FS PKG Code S) : Scale : on letter size paper imensions shown below are in: inches [millimeters] Part Weight per unit (gram):.77 9 September 998, Rev. A
12 TRAEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT - SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUCT STATUS EFINITIONS efinition of Terms. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition Advance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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