Features 3.3 A, 20 V. V F < A (T J = 125 o C). V F < A. V F < A. TA=25 o C unless otherwise noted

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FFSP Integrated P-hannel MOSFET and Schottky iode October FFSP General escription The FFSP combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage

1 FFSP Integrated P-hannel MOSFET and Schottky iode October FFSP General escription The FFSP combines the exceptional performance of Fairchild's high cell density MOSFET with a very low forward voltage drop Schottky barrier rectifier in an SO- package. This device is designed specifically as a single package solution for to converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of / converter topologies. pplications / converters Load Switch Motor rives Features 3.3, V. V F <.39 (T J = 5 o ). V F <.7 V F <.5 R S(ON) =.5 V GS = V R S(ON) =. V GS =.5 V. Schottky and MOSFET incorporated into single power surface mount SO- package. Electrically independent Schottky and MOSFET pinout for design flexibility. 7 Pin S G S G MOSFET Maximum Ratings T=5 o unless otherwise noted Symbol Parameter Ratings Units V SS rain-source Voltage - V V GSS Gate-Source Voltage ± V I rain urrent - ontinuous (Note a) -3.3 P - Pulsed - Power issipation for ual Operation Power issipation for Single Operation (Note a).6 (Note b) (Note c).9 T J, T STG Operating and Storage Temperature Range -55 to +5 W Schottky iode Maximum Ratings T=5 o unless otherwise noted V RRM Repetitive Peak Reverse Voltage V I O verage Forward urrent (Note a) Package Marking and Ordering Information evice Marking evice Reel Size Tape Width Quantity FFSP FFSP 3 mm 5 units Fairchild Semiconductor International FFSP Rev. E

2 Electrical haracteristics T = 5 unless otherwise noted Symbol Parameter Test onditions Min Typ Max Units Off haracteristics BV SS rain-source Breakdown Voltage V GS = V, I = -5 µ - V I SS Zero Gate Voltage rain urrent V S = - 6 V, - µ V GS = V T J = 55 - I GSSF Gate-Body Forward Leakage V GS = V, V S = V n I GSSR Gate-Body Reverse Leakage V GS = - V, V S = V - n FFSP On haracteristics (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = -5 µ V R S(on) Static rain-source On-Resistance V GS = - V, I = Ω V GS = -.5 V, I = I (on) On-State rain urrent V GS = - V, V S = -5 V - g FS Forward Transconductance V S = - V, I = S ynamic haracteristics iss Input apacitance V S = - V, V GS = V, 7 pf oss Output apacitance f =. MHz 5 pf Reverse Transfer apacitance 5 pf rss Switching haracteristics (Note ) t d(on) Turn-On elay Time V = -5 V, I = -, 6 ns t r Turn-On Rise Time V GS = - V, R GEN = 6 Ω 7 ns t d(off) Turn-Off elay Time 7 7 ns t f Turn-Off Fall Time Q g Total Gate harge V S = -5 V, I = -3.3, V GS = - V,. ns 7 n rain-source iode haracteristics and Maximum Ratings I S Maximum ontinuous rain-source iode Forward urrent -.3 V S rain-source iode Forward Voltage V GS = V, I S = -.3 (Note ) V Schottky iode haracteristics I R Reverse Leakage V R = V T J = 5 5 u T J = 5 m V F Forward Voltage I F = T J = 5.7 V T J = 5.39 I F = T J = 5.5 T J = 5.53 Thermal haracteristics R J Thermal Resistance, Junction-to-mbient (Note a) 7 R J Thermal Resistance, Junction-to-ase (Note ) Notes: : R θj is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θj is guaranteed by design while R θ is determined by the user's board design. a) 5 /W when mounted on a in pad of oz. copper. b) 5 /W when mounted on a. in pad of oz. copper. c) 5 /W when mounted on a minimum pad. Scale : on letter size paper : Pulse Test: Pulse Width 3 µs, uty ycle.% FFSP Rev. E

3 Typical haracteristics - I, RIN-SOURE URRENT () 6 V GS= -V -7.V -6.V -5.V -.5V -.V -3.5V 3 5 -V S, RIN-SOURE VOLTGE (V) R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE..6.. V GS =.V.5V 5.V 6.V 7.V V I, IRIN URRENT () FFSP Figure. On-Region haracteristics. Figure. On-Resistance Variation with rain urrent and Gate Voltage. R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE I = 7.6 V GS = V R S(ON), ON-RESISTNE (OHM) T = 5 o T = 5 o I = T J, JUNTION TEMPERTURE ( o ) V GS, GTE TO SOURE VOLTGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. I, RIN URRENT () V S = 5V T = -55 o 5 o 5 o I S, REVERSE RIN URRENT ()... V GS = V T = 5 o 5 o -55 o V GS, GTE TO SOURE VOLTGE (V) V S, BOY IOE FORWR VOLTGE (V) Figure 5. Transfer haracteristics. Figure 6. Body iode Forward Voltage Variation with Source urrent and Temperature. FFSP Rev. E

4 F R Typical haracteristics (continued) V GS, GTE-SOURE VOLTGE (V) 6 I = 7.6 V S = V V V PITNE (pf) 6 OSS ISS f = MHz V GS = V FFSP Q g, GTE HRGE (n) RSS V S, RIN TO SOURE VOLTGE (V) Figure 7. Gate-harge haracteristics. Figure. apacitance haracteristics.. I, FORWR URRENT () 5.5. T = 5 J 5 I, REVERSE URRENT ().5. T = 5 J V, FORWR VOLTGE (V) F. 5 5 V R, REVERSE VOLTGE (V) Figure 9. Schottky iode Forward Voltage. Figure. Schottky iode Reverse urrent. r(t), NORMLIZE EFFETIVE TRNSIENT THERML RESISTNE = Single Pulse t, TIME (sec) P(pk) R θj (t) = r(t) * R θj R θj =35 /W t t T J - T = P * R θj (t) uty ycle, = t /t Figure. Transient Thermal Response urve. Thermal characterization performed using the conditions described in Note c. Transient themal response will change depending on the circuit board design. FFSP Rev. E

5 TREMRKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Ex Bottomless oolfet ROSSVOLT OME E MOS TM EnSigna TM FT FT Quiet Series FST ISLIMER LIFE SUPPORT POLIY FIRHIL S PROUTS RE NOT UTHORIZE FOR USE S RITIL OMPONENTS IN LIFE SUPPORT EVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN PPROVL OF FIRHIL SEMIONUTOR ORPORTION. s used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUT STTUS EFINITIONS efinition of Terms FSTr GlobalOptoisolator GTO HiSe ISOPLNR MIROWIRE OPTOLOGI OPTOPLNR POP PowerTrench QFET QS QT Optoelectronics Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT - SyncFET TinyLogic UH VX FIRHIL SEMIONUTOR RESERVES THE RIGHT TO MKE HNGES WITHOUT FURTHER NOTIE TO NY PROUTS HEREIN TO IMPROVE RELIBILITY, FUNTION OR ESIGN. FIRHIL OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLITION OR USE OF NY PROUT OR IRUIT ESRIBE HEREIN; NEITHER OES IT ONVEY NY LIENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS.. critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition dvance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F

Features V F < A (T J = 125 C) V F < A V F < A. TA=25 o C unless otherwise noted

Features V F < A (T J = 125 C) V F < A V F < A. TA=25 o C unless otherwise noted FFSP June Integrated V P-hannel PowerTrench MOSFET and Schottky iode FFSP General escription The FFSP combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward