N-Channel Logic Level Enhancement Mode Field Effect Transistor

Transcription

1 P3BG TO-5 (PK) PROUCT SUMMRY V (BR)SS R S(ON) I 5 m 35 G S. GTE. RIN 3. SOURCE BSOLUTE MXIMUM RTINGS (T C = 5 C Unless Otherwise Noted) PRMETERS/TEST CONITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ± V Continuous rain Current T C = 5 C 35 T C = C Pulsed rain Current I M valanche Current I R 5 valanche Energy L =.33mH E S 5 Repetitive valanche Energy L =.5mH E R 5.6 Power issipation I 5 T C = 5 C 5 T C = C Operating Junction & Storage Temperature Range T j, T stg -55 to 5 Lead Temperature ( / 6 from case for sec.) T L 75 THERML RESISTNCE RTINGS THERML RESISTNCE SYMBOL TYPICL MXIMUM UNITS Junction-to-Case R θjc.5 Junction-to-mbient R θj 75 C / W Case-to-Heatsink R θcs.7 Pulse width limited by maximum junction temperature. uty cycle P 35 mj W C ELECTRICL CHRCTERISTICS (T C = 5 C, Unless Otherwise Noted) PRMETER SYMBOL TEST CONITIONS LIMITS MIN TYP MX UNIT STTIC rain-source Breakdown Voltage V (BR)SS V GS = V, I = 5µ 5 V Gate Threshold Voltage V GS(th) V S = V GS, I = 5µ Gate-Body Leakage I GSS V S = V, V GS = ±V ±5 n Zero Gate Voltage rain Current I SS V S = V, V GS = V 5 µ V S = V, V GS = V, T J = 5 C 5 EC-3-

2 P3BG TO-5 (PK) On-State rain Current I (ON) V S = V, V GS = V 35 rain-source On-State Resistance R S(ON) V GS =.5V, I = V GS = V, I = Forward Transconductance g fs V S = 5V, I = 3 8 S YNMIC m Input Capacitance C iss 53 7 Output Capacitance C oss V GS = V, V S = 5V, f = MHz 75 Reverse Transfer Capacitance C rss 6 9 Total Gate Charge Q g 8. Gate-Source Charge Q gs V S =.5V (BR)SS, V GS = V,.5 3. Gate-rain Charge Q gd I = Turn-On elay Time t d(on) Rise Time t r V = 5V 7 Turn-Off elay Time t d(off) I 5, V GS = V, R GS = pf nc ns Fall Time t f 8 7 SOURCE-RIN IOE RTINGS N CHRCTERISTICS (T C = 5 C) Continuous Current I S 35 Pulsed Current 3 I SM Forward Voltage V S I F = I S, V GS = V.. V Reverse Recovery Time t rr 5 8 ns Reverse Recovery Charge Q rr 3 nc Pulse test : Pulse Width 3 µsec, uty Cycle. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMRK: THE PROUCT MRKE WITH P3BG, TE COE or LOT # Orders for parts with plating can be placed using the PXXXXXXG parts name. EC-3-

3 P3BG TO-5 (PK) TYPICL CHRCTERISTICS I,RIN - SOURCE CURRENT( ) ON-REGION CHRCTERISTIC.V 7.V 6.V V,RIN- SOURCE VOLTGE ( V ) S 5.V.5V.V 3.5V V GS =3.V ON- RESISTNCE VRITION WITH RIN CURRENT N GTE VOLTGE R S(ON),NORMLIZE RIN - SOURCE ON - RESISTNCE V GS =.V I,RIN CURRENT( ).5V 5.V 6.V 7.V V R S(ON),NORMLIZE RIN - SOURCE ON - RESISTNCE ON- RESISTNCE VRITION WITH TEMPERTURE I = 5 V GS= V R S(ON),ON-RESISTNCE(OHM) ON-RESISTNCE VRITION WITH GTE-TO-SOURCE VOLTGE.6 I = T = 5 C T = 5 C T j,junction TEMPERTURE( C ). 6 V GS,GTE TO SOURCE VOLTGE 8 I,RIN CURRENT( ) V =V S TRNSFER CHRCTERISTICS T = -55 C 5 C 5 C I,REVERSE RIN CURRENT( ) S 6... BOY IOE FORWR VOLTGE VRITION WITH SOURCE CURRENT N TEMPERTURE V GS= V T = 5 C 5 C -55 C 3 5 V GS,GTE TO SOURCE VOLTGE V,BOY IOE FORWR VOLTGE( V ) S. 3 EC-3-

4 P3BG TO-5 (PK) V GS,GTE - SOURCE VOLTGE ( V ) 8 6 I = 5 GTE CHRGE CHRCTERISTICS V S = 5V V 5V 8 6 Q g,gte CHRGE ( nc ) SINGLEPULSE MXIMUM POWER ISSIPTION SINGLE PULSE R JC =.5 C/W T C = 5 C CPCITNCE( pf ) 3 CPCITNCE CHRCTERISTICS f = MHZ V GS= V 5 V,RIN TO SOURCE VOLTGE ( V ) S Ciss Coss Crss MXIMUM SFE OPERTING RE POWER( W ) 6 8 I,RIN CURRENT( ) R Limit ds(on) ms C ms µs 35.µS. V GS= V SINGLE PULSE R JC=.5 C/W Tc = 5 C -. SINGLE PULSE TIME( SEC ) V S,RIN - SOURCE VOLTGE TRNSIENT THERML RESPONSE CURVE r,normlize EFFECTIVE ( t ) TRNSIENT THERML RESISTNCE = Single pulse -5 - t, TIME( ms ) -3 P(pk) t - t.r (t)=r(t)*r JC.R JC =.5 C/W 3.T j + T C = P * R (t).uty Cycle, = JC t t - EC-3-

5 P3BG TO-5 (PK) TO-5 (PK) MECHNICL T imension mm Min. Typ. Max. imension mm Min. Typ. Max H.89.3 B.. I C.5.6 J K.6 E.5.69 L.5.9 F.3.3 M G N I B C J H G 3 F L E M K 5 EC-3-