SMPS MOSFET. V DSS R DS(on) max I D. Symbol Parameter Max. Units
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1 P SMPS MOSFET ppications High Frequency C-C Isoated Converters with Synchronous Rectification for Teecom and Industria use High Frequency Buck Converters for Computer Processor Power Lead-Free IRF7457PbF HEXFET Power MOSFET V SS R S(on) max I 20V 7.0mΩ 5 Benefits Utra-Low R S(on) Very Low Gate Impedance Fuy Characterized vaanche Votage and Current S S S G Top View SO-8 bsoute Maximum Ratings Symbo Parameter Max. Units V S rain-source Votage 20 V V GS Gate-to-Source Votage ± 20 V T = 25 C Continuous rain Current, V V 5 T = 70 C Continuous rain Current, V V 2 I M Pused rain Current 20 = 25 C Maximum Power issipationƒ 2.5 W = 70 C Maximum Power issipationƒ.6 W Linear erating Factor 0.02 W/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Symbo Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θj Junction-to-mbient 50 C/W Notes through are on page 8 /2/04
2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = V, I = 5 ƒ R S(on) Static rain-to-source On-Resistance mω V GS = 4.5V, I = 2 ƒ V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ 20 V µ S = 6V, V GS = 0V I SS rain-to-source Leakage Current 0 V S = 6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 6V n Gate-to-Source Reverse Leakage -200 V GS = -6V T J = 25 C (uness otherwise specified) Symbo Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 30 S V S = 6V, I = 2 Q g Tota Gate Charge I = 2 Q gs Gate-to-Source Charge 7 nc V S = V Q gd Gate-to-rain ("Mier") Charge 5 V GS = 4.5V, ƒ Q oss Output Gate Charge V GS = 0V, V S = V t d(on) Turn-On eay Time 4 V = V, t r Rise Time 6 I = 2 ns t d(off) Turn-Off eay Time 6 R G =.8Ω t f Fa Time 7.5 V GS = 4.5V ƒ C iss Input Capacitance 30 V GS = 0V C oss Output Capacitance 600 V S = V C rss Reverse Transfer Capacitance 270 pf ƒ =.0MHz vaanche Characteristics Parameter Typ. Max. Units E S Singe Puse vaanche Energy 265 mj I R vaanche Current 5 iode Characteristics Symbo Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the G I SM Pused Source Current integra reverse 20 (Body iode) p-n junction diode. S V T J = 25 C, I S = 2, V GS = 0V ƒ V S iode Forward Votage 0.67 T J = 25 C, I S = 2, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2, V R = 5V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0/µs ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2, V R =5V Q rr Reverse Recovery Charge 74 nc di/dt = 0/µs ƒ 2
3 I, rain-to-source Current () 00 0 VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM2.7V 2.7V I, rain-to-source Current () 00 0 VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 2.7V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 00 0 T J = 50 C T J = 25 C V S= 5V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = V GS= V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Votage (V) I = 2 V S = V C rss 0 0 V S, rain-to-source Votage (V) Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Votage (V) I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) us 0us ms ms TC = 25 C TJ = 50 C Singe Puse 0. 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Fig 8. Maximum Safe Operating rea Forward Votage 4
5 6 V S R I, rain Current () Fig a. Switching Time Test Circuit V S 90% R G V GS V Puse Width µs uty Factor 0. %.U.T. + - V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient 5
6 R S ( on ), rain-to-source On Resistance ( Ω ) IRF7457PbF R S(on), rain-to -Source On Resistance (Ω) VGS = 4.5V I = VGS = V I, rain Current ( ) V GS, Gate -to -Source Votage (V) Fig 2. On-Resistance Vs. rain Current Fig 4. On-Resistance Vs. Gate Votage Current Reguator Same Type as.u.t. 2V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Samping Resistors + V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S 20V V G tp Q GS L.U.T I S 0.0Ω Q G Q G Charge 5V RIVER + - V E S, Singe Puse vaanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 4a&b. Uncamped Inductive Test circuit Fig 4c. Maximum vaanche Energy and Waveforms Vs. rain Current 6
7 SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B H 0.25 [.0] INCHES IM MIN MX b MILLIMETERS MIN MX c E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L y e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBS TRTE [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER 7
8 SO-8 Tape and Ree TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Notes: Repetitive rating; puse width imited by max. junction temperature. Starting T J = 25 C, L = 3.7mH R G = 25Ω, I S = 2. ƒ Puse width 300µs; duty cyce 2%. When mounted on inch square copper board, t< sec ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information. /04 8
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