IRF7805QPbF. Absolute Maximum Ratings Max. V DS Drain-to-Source Voltage 30 V GS
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![P 964 dvanced Process Technoogy Utra Low On-Resistance N Channe MOFET urface Mount vaiabe in Tape & Ree 50 C Operating Temperature utomotive [Q0] Quaified Lead-Free escription pecificay designed for](/docs-images/77/74878854/images/1-0.jpg "utomotive appications, these EXFET Power MOFET's in package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area.")
1 P 964 dvanced Process Technoogy Utra Low On-Resistance N Channe MOFET urface Mount vaiabe in Tape & Ree 50 C Operating Temperature utomotive [Q0] Quaified Lead-Free escription pecificay designed for utomotive appications, these EXFET Power MOFET's in package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area. dditiona features of these utomotive quaified EXFET Power MOFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in utomotive appications and a wide variety of other appications. The efficient O-8 package provides enhanced therma characteristics making it idea in a variety of power appications. This surface mount O-8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. IRF7805QPbF 8 G O-8 Top View evice Features IRF7805Q V 30V R (on) mω Qg 3nC Qsw.5nC Qoss 36nC bsoute Maximum Ratings Parameter Max. Units V rain-to-ource Votage 30 V V G Gate-to-ource Votage ± 2 T = 25 C Continuous rain Current, V 0V 3 T = 70 C Continuous rain Current, V 0V 0 I M Pused rain Current c 00 = 25 C Power issipation e 2.5 W = 70 C Power issipation e.6 Linear erating Factor 0.02 W/ C T J Operating Junction and -55 to + 50 C T TG torage Temperature Range Therma Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead h 20 C/W R θj Junction-to-mbient eh /23/07
2 T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units BV rain-to-ource Breakdown Votageh 30 V R (on) tatic rain-to-ource On-Resistanceh 9.2 mω V G(th) Gate Threshod Votage h V I rain-to-ource Leakage Current 70 0 µ 50 I G Gate-to-ource Forward Leakage 00 Gate-to-ource Reverse Leakage -00 n Q g Tota Gate Charge h 22 3 Q gs Pre-Vth Gate-to-ource Charge 3.7 Q gs2 Post-Vth Gate-to-ource Charge.4 nc Q gd Gate-to-rain Charge 6.8 Q sw witch Charge (Q gs2 + Q gd ) h Q oss Output Charge h nc R G Gate Resistance Ω t d(on) Turn-On eay Time 6 t r Rise Time 20 t d(off) Turn-Off eay Time 38 ns t f Fa Time 6 iode Characteristics Parameter Min. Typ. Max. Units I Continuous ource Current 2.5 (Body iode)c I M Pused ource Current 06 (Body iode) V iode Forward Votage h.2 V Q rr Reverse Recovery Charge f 88 ns Q rr(s) Reverse Recovery Charge 55 (with Parae chottky) f nc Conditions V G = 0V, I = 250µ V G = 4.5V, I = 7.0 d V = V G, I = 250µ V = 30V, V G = 0V V = 24V, V G = 0V V = 24V, V G = 0V, T J = 00 C V G = 2V V G = -2V V G = 5.0V V = 6V I = 7.0 V = 6V, V G = 0V V = 6V, V G = 4.5V e I = 7.0 R G = 2Ω Resistive Load Conditions MOFET symbo showing the integra reverse p-n junction diode. T J = 25 C, I = 7.0, V G = 0V di/dt = 700/µs V = 6V, V G = 0V, I = 7.0 di/dt = 700/µs (with 0BQ040) V = 6V, V G = 0V, I = 7.0 Notes: Repetitive rating; puse width imited by max. junction temperature. Puse width 300 µs; duty cyce 2%. ƒ When mounted on inch square copper board, t < 0 sec. Typ = measured - Q oss R θ is measured at T J of approximatey 90 C. evices are 00% tested to these parameters. 2
3 Typica Characteristics IRF7805QPbF Fig. Normaized On-Resistance vs. Temperature Fig 2. Typica Gate Charge vs. Gate-to-ource Votage 0 I, Reverse rain Current () T J = 50 C T J = 25 C Fig 3. Typica Rds(on) vs. Gate-to-ource Votage V G = 0 V V,ource-to-rain Votage (V) Fig 4. Typica ource-rain iode Forward Votage 00 Therma Response (Z thj ) 0 = INGLE PULE (TERML REPONE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T PM t, Rectanguar Puse uration (sec) Figure 5. Maximum Effective Transient Therma Impedance, Junction-to-mbient t t2
4 O-8 Package Outine imensions are shown in miimeters (inches) ( ; ' % + >@,&+(6 0,//,0(7(56 ',0 0, 0; 0, 0; E F ' ( +. / \ %6,& %6,& %6,& ƒ ƒ %6,& ƒ ƒ.[ƒ & \ ;E >@ ;/ ;F O-8 Part Marking >@ & % 27(6 ',0(6,2,* 72/(5&,*3(560(<0 &2752//,*',0(6,20,//,0(7(5 ',0(6,265(6+2:,0,//,0(7(56>,&+(6@ 287/,(&2) ('(&287/,(06 ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67+(/(*7+2)/(')2562/'(5,*72 68%6757( (;03/(7+,6,6,5)026)(7 >@ )22735,7,7(57,2/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 '(6,*7(6/(')5(( 352'8&7237,2/ < /67',*,72)7+(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( 35780%(5 Note: For the most current drawing pease refer to IR website at 4
5 O-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTE:. CONTROLLING IMENION : MILLIMETER. 2. LL IMENION RE OWN IN MILLIMETER(INCE). 3. OUTLINE CONFORM TO EI-48 & EI (2.992) MX. NOTE :. CONTROLLING IMENION : MILLIMETER. 2. OUTLINE CONFORM TO EI-48 & EI (.566 ) 2.40 (.488 ) Note: For the most current drawing pease refer to IR website at ata and specifications subject to change without notice. This product has been designed and quaified for the utomotive [Q0] market. Quaification tandards can be found on IR s Web site. IR WORL EQURTER: 233 Kansas t., E egundo, Caifornia 90245, U Te: (30) TC Fax: (30) Visit us at for saes contact information.07/
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30V GS = 10V 6.2nC
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EMICOUCTOR TECHIC T KF55PR/FR/P/F CHE MO FIE EFFECT TRITOR eneral escription KF55PR, KF55P This planar stripe MOFET has better characteristics, such as fast switching time, fast reverse recovery time,
P-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
AOD444/AOI444 60V N-Channel MOSFET
AO/AOI 6V NChannel MOFET eneral escription The AO/AOI combine advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). Those devices are suitable for use in PWM,
P-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.) - 3.2 at V G = - V -..35 at V G = -.5 V - 9. 5 nc O-8 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
P-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) r (on) ( ) I (A) Q g (Typ).8 @ V G = V 9.6 3 5.3 @ V G = 4.5 V 7.5 FEATURE TrenchFET Power MOFET Advanced High Cell ensity Process % R g Tested APPLICATION Load
Gate Protection Diode. Part Number Case Packaging DMP3018SSS-13 SO-8 2,500/Tape & Reel
P-CHANNEL ENHANCEMENT MOE MOFET Product ummary Features and Benefits Low On-Resistance BV -3V R (ON) Max 2mΩ @ V G = -V 2mΩ @ V G = -4.5V I Max T A = +25 C -.5A -8.A Low Input Capacitance Fast witching
P-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
PolarHT TM HiPerFET Power MOSFET
PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Fast Intrinsic Diode Avaanche Rated S = V I D25 = 17 A R DS(on) 9. mω t rr 15 ns Symbo Test Conditions Maximum Ratings S = 25 C to 175 C V V DGR
N-Channel 30-V (D-S) MOSFET
N-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m
FMC769 N-Channel Power Trench MOFET V, 3.3 A, 8.5 m Features Max r (on) = 8.5 m at V G = V, I = 3.3 A Max r (on) =.5 m at V G = 4.5 V, I =.6 A High performance technology for extremely low r (on) Termination
N-Channel 40-V (D-S) MOSFET
i5y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).33 at V G = V 3.39 at V G =.5 V 33 3.5 nc FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R g and
V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View
AON77 V NChannel MOFET RFET TM General Description RFET TM AON77 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device
Top View. Internal Schematic. Part Number Case Packaging DMT10H025SSS-13 SO-8 2,500/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max I Max T A = +25 C 23mΩ @ V G = V 7.4A 3mΩ @ V G = 6V 6.5A escription and Applications This MOFET is designed to minimize the on-state resistance
PolarHT TM Power MOSFET
PoarHT TM Power MOSFET = 5 V I D25 = A R DS(on) m Ω N-Channe Enhancement Mode Avaanche Rated Symbo Test Conditions Maximum Ratings TO-264 (IXTK) = 25 C to 75 C V V DGR = 25 C to 75 C; R GS = MΩ V Continuous
V DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested. Top View S S S G. Symbol
AON7E 3V NChannel AlphaMO General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R(on) at.v G Low Gate Charge E protection RoH and HalogenFree Compliant Product ummary V I (at V G
AO V P-Channel MOSFET
AO343 2V PChannel MOFET eneral escription Product ummary The AO343 uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.v. This device
V DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead 20 C/W Junction-to-Ambient 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters l LeadFree HEXFET Power MOSFET
N-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
N-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).9 at V G = V 6 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 69-- efinition Extremely Low Q gd WFET Technology for
SMPS MOSFET. V DSS R DS(on) typ. I D A I DM. 27 P C = 25 C Power Dissipation 45 Linear Derating Factor. V/ns T J
M MOFE D - 4444 Applications l witch Mode ower upply M) l ninterruptible ower upply l igh peed ower witching EXFE ower MOFE V D R Don) typ. I D 500V 20mΩ.A Benefits l Low ate Charge Qg results in imple
P-Channel 30-V (D-S) MOSFET
i4435by P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = - V - 9. - 3.35 at V G = - 4.5 V - 6.9 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET Advanced
IRLML2030TRPbF HEXFET Power MOSFET
V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
Power MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50
Power MOFET PROUCT UMMRY V (V) 800 R (on) (Ω) V G = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 2 Q gd (nc) 110 Configuration ingle FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting
A I DM W/ C V GS. Thermal Resistance Symbol Parameter Typ. Max. Units
PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
N-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
N-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
N-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
P-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
34A 32A. Part Number Case Packaging DMT10H015LCG-7 V-DFN (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN (Type B) 3,000/Tape & Reel
V N-CHANNEL ENHANCEMENT MOE MOFET Product ummary BV V R (ON) Max 5mΩ @ V G = V 9.5mΩ @ V G = 6V escription and Applications I T C = +25 C 34A 32A This new generation N-Channel Enhancement Mode MOFET is
N-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
P-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
Green. Features I D T C = +25 C 150A 100A. Pin1. Top View Pin Configuration
Product ummary BV 3V R (ON).mΩ @ V G = V 3.mΩ @ V G = 4.5V escription and Applications I T C = +5 C 5A A This new generation MOFET is designed to minimize R (ON), yet maintain superior switching performance.
N-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant