V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3 EP D. Top View

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1 AON77 V NChannel MOFET RFET TM General Description RFET TM AON77 uses advanced trench technology with a monolithically integrated chottky diode to provide excellent R D(ON),and low gate charge. This device is suitable for use as a low side FET in MP, load switching and general purpose applications. Product ummary V D I D (at V G =V) R D(ON) (at V G =V) R D(ON) (at V G =.V) V A < 7.mΩ <.mω % UI Tested % R g Tested Top View DFN x EP Bottom View Top View D 7 RFET TM oft Recovery MOFET: Integrated chottky Diode Pin G Absolute Maximum Ratings T A = C unless otherwise noted Parameter ymbol Maximum Drainource Voltage Gateource Voltage V D Continuous Drain T C = C I Current G D T C = C Pulsed Drain Current C Continuous Drain T A = C I DM Current T A =7 C Avalanche Current C I A 7 Avalanche energy L=.mH C Power Dissipation B T C = C T C = C Junction and torage Temperature Range T J, T TG to V G I DM E A P D T A = C. P Power Dissipation A DM W T A =7 C ± Units V V A A A mj W C Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s Maximum JunctiontoAmbient A D R θja teadytate 7 Maximum JunctiontoCase teadytate. R θjc Units C/W C/W C/W Rev : May. Page of 7

2 AON77 Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV D Drainource Breakdown Voltage I D =ma, V G =V V I D V D =V, V G =V. T J = C I G GateBody leakage current V D =V, V G =±V ± na V G(th) Gate Threshold Voltage V D =V G, I D =µa..7. V I D(ON) On state drain current V G =V, V D =V A R D(ON) Zero Gate Voltage Drain Current tatic Drainource OnResistance V G =V, I D =A V G =.V, I D =A. 7. T J = C 9.. mω g F Forward Transconductance V D =V, I D =A V D Diode Forward Voltage I =A,V G =V..7 V I Maximum BodyDiode Continuous Current A DYNAMIC PARAMETER C iss Input Capacitance 9 pf C oss Output Capacitance V G =V, V D =V, f=mhz 7 pf C rss Reverse Transfer Capacitance pf R g Gate resistance V G =V, V D =V, f=mhz.7.. Ω WITCHING PARAMETER Q g (V) Total Gate Charge nc Q g (.V) Total Gate Charge nc V G =V, V D =V, I D =A Q gs Gate ource Charge nc Q gd Gate Drain Charge nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V G =V, V D =V, R L =.Ω, 9 ns t D(off) TurnOff DelayTime R GEN =Ω 7 ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =A, di/dt=a/µs 7 ns Q rr Body Diode Reverse Recovery Charge I F =A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. The Power dissipation P DM is based on R θja t s value and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX) = C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) = C. Ratings are based on low frequency and duty cycles to keep initial T J = C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to are obtained using <µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The OA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR board with oz. Copper, in a still air environment with T A = C. ma mω THI PRODUCT HA BEEN DEIGNED AND QUALIFIED FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT DEVICE OR YTEM ARE NOT AUTHORIZED. AO DOE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PRODUCT. AO REERVE THE RIGHT TO IMPROVE PRODUCT DEIGN, FUNCTION AND RELIABILITY WITHOUT NOTICE. Rev : May Page of 7

3 AON77 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC V.V V D =V.V V I D (A) I D (A) C C V G =.V V D (Volts) Fig : OnRegion Characteristics (Note E)... V G (Volts) Figure : Transfer Characteristics (Note E) R D(ON) (mω) V G =.V V G =V Normalized OnResistance.... V G =.V I D =A 7 V G =V I D =A I D (A) Figure : OnResistance vs. Drain Current and Gate Voltage (Note E). 7 7 Temperature ( C) Figure : OnResistance vs. Junction Temperature (Note E) I D =A.E.E C R D(ON) (mω) C I (A).E C.E C V G (Volts) Figure : OnResistance vs. Gateource Voltage (Note E).E V D (Volts) Figure : BodyDiode Characteristics (Note E) Rev : May Page of 7

4 AON77 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC V D =V I D =A C iss V G (Volts) Capacitance (pf) C oss Q g (nc) Figure 7: GateCharge Characteristics C rss V D (Volts) Figure : Capacitance Characteristics I D (Amps)..... R D(ON) limited T J(Max) = C T C = C µs µs µs ms ms DC Power (W) T J(Max) = C T C = C 7... V D (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F).... Figure : ingle Pulse Power Rating JunctiontoCase (Note F) Z θjc Normalized Transient Thermal Resistance. D=T on /T T J,PK =T C P DM.Z θjc.r θjc R θjc =. C/W ingle Pulse In descending order D=.,.,.,.,.,., single pulse P D T on T Figure : Normalized Maximum Transient Thermal Impedance (Note F) Rev : May Page of 7

5 AON77 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC Power Dissipation (W) Current rating I D (A) 7 T CAE ( C) Figure : Power Derating (Note F) 7 T CAE ( C) Figure : Current Derating (Note F) T A = C Power (W) 7... Figure : ingle Pulse Power Rating JunctiontoAmbient (Note H) Z θja Normalized Transient Thermal Resistance... D=T on /T T J,PK =T A P DM.Z θja.r θja R θja =7 C/W ingle Pulse..... Figure : Normalized Maximum Transient Thermal Impedance (Note H) In descending order D=.,.,.,.,.,., single pulse P D T on T Rev : May Page of 7

6 AON77 TYPICAL ELECTRICAL AND THERMAL CHARACTERITIC.E. I R (A).E.E.E.E V D =V V D =V V D (V) A A I =A A.E Temperature ( C) Figure : Diode Reverse Leakage Current vs. Junction Temperature Temperature ( C) Figure 7: Diode Forward voltage vs. Junction Temperature di/dt=a/µs ºC di/dt=a/µs. Q rr (nc) 9 Q rr I rm ºC ºC ºC I rm (A) t rr (ns) 9 t rr ºC ºC ºC ºC.. I (A) Figure : Diode Reverse Recovery Charge and Peak Current vs. Conduction Current I (A) Figure 9: Diode Reverse Recovery Time and oftness Factor vs. Conduction Current I s =A ºC ºC I s =A. Q rr (nc) Q rr I rm ºC ºC ºC di/dt (A/µs) Figure : Diode Reverse Recovery Charge and Peak Current vs. di/dt I rm (A) t rr (ns) 9 ºC ºC ºC di/dt (A/µs) Figure : Diode Reverse Recovery Time and oftness Factor vs. di/dt t rr.. Rev : May Page of 7

7 AON77 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV D Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev : May Page 7 of 7