V T j,max I DM. 100% UIS Tested 100% R g Tested TO251A IPAK AOI11S60

Transcription

1 AO6/AOI6 6V A α MO TM Power Transistor eneral escription The AO6 & AOI6 have been fabricated using the advanced αmo TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low R (on), Q g and E O along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product ummary T j,max I M 7V 45A R (ON),max.99Ω Q g,typ E 4V % UI Tested % R g Tested nc.7µj Top View TO5 PAK Bottom View Top View TO5A IPAK Bottom View AO6 AOI6 Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter ymbol Maximum rainource Voltage 6 ateource Voltage Continuous rain Current Pulsed rain Current C Avalanche Current C T C =5 C T C = C Repetitive avalanche energy C ingle pulsed avalanche energy H T C =5 C Power issipation B erate above 5 o C MOFET dv/dt ruggedness Peak diode recovery dv/dt Junction and torage Temperature Range V V I I M I AR E AR E A P dv/dt T J, T T R θjc to 5 Units V Maximum lead temperature for soldering purpose, /8" from case for 5 seconds K T L C Thermal Characteristics Parameter Maximum JunctiontoAmbient A, Maximum Casetosink A ymbol R θja R θc Typical 45 Maximum 55.5 Units C/W C/W Maximum JunctiontoCase,F.45.6 C/W ± 45 6 V A A mj mj W W/ o C V/ns C Rev: Jan Page of 7

2 AO6/AOI6 Electrical Characteristics (T J =5 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV I I atebody leakage current V =V, V =±V ± nα V (th) ate Threshold Voltage V =5V,I =5µA V R (ON) rainource Breakdown Voltage Zero ate Voltage rain Current tatic rainource OnResistance.5.99 Ω.98. Ω V iode Forward Voltage I =5.5A,V =V, T J =5 C.84 V I Maximum Bodyiode Continuous Current A I M Maximum Bodyiode Pulsed Current C 45 A YNAMIC PARAMETER C iss Input Capacitance 545 pf V =V, V =V, f=mhz C oss Output Capacitance 7. pf C o(er) Effective output capacitance, energy related I V =V, V = to 48V, f=mhz.8 pf C o(tr) Effective output capacitance, time related J 9.6 pf C rss Reverse Transfer Capacitance V =V, V =V, f=mhz.4 pf R g ate resistance V =V, V =V, f=mhz 6.5 Ω WITCHIN PARAMETER Q g Total ate Charge nc Q gs ate ource Charge V =V, V =48V, I =5.5A.8 nc Q gd ate rain Charge.8 nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V =V, V =4V, I =5.5A, ns t (off) TurnOff elaytime R =5Ω 59 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =5.5A,dI/dt=A/µs,V =4V 5 ns I rm Peak Reverse Recovery Current I F =5.5A,dI/dt=A/µs,V =4V A Q rr Body iode Reverse Recovery Charge I F =5.5A,dI/dt=A/µs,V =4V. µc THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. I =5µA, V =V, T J =5 C I =5µA, V =V, T J =5 C V =6V, V =V V =48V, T J =5 C V =V, I =.8A, T J =5 C V =V, I =.8A, T J =5 C A. The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =5 C.. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using < µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The OA curve provides a single pulse ratin g..these tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. H. L=6mH, I A =A, V =5V, tarting T J =5 C I. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V is rising from to 8% V (BR). J. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V is rising from to 8% V (BR). K. Wave soldering only allowed at leads. V µa Rev: Jan Page of 7

3 AO6/AOI6 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC I (A) V =4.5V V 5 5 7V 6V 5.5V 5V V (Volts) Figure : OnRegion Characteristics@5 C I (A) V V =4.5V 5 5 7V 6V 5.5V 5V V (Volts) Figure : OnRegion Characteristics@5 C V =V 55 C. 5 C.9 I (A) 5 C R (ON) (Ω).6 V =V V (Volts) Figure : Transfer Characteristics I (A) Figure 4: OnResistance vs. rain Current and ate Voltage Normalized OnResistance V =V I =.8A BV (Normalized) Temperature ( C) Figure 5: OnResistance vs. Junction Temperature T J ( o C) Figure 6: Break own vs. Junction Temperature Rev: Jan Page of 7

4 AO6/AOI6 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC.E 5.E.E 5 C V =48V I =5.5A I (A).E.E.E 5 C V (Volts) 9 6.E4.E V (Volts) Figure 7: Bodyiode Characteristics (Note E) Q g (nc) Figure 8: atecharge Characteristics 6 Capacitance (pf) C iss C oss Eoss(uJ) 5 4 E oss C rss V (Volts) Figure 9: Capacitance Characteristics V (Volts) Figure : Coss stored Energy 8 I (Amps).. R (ON) limited T J(Max) =5 C T C =5 C C V (Volts) Figure : Maximum Forward Biased afe Operating Area (Note F) µs µs ms ms Power (W) 6 4 T J(Max) =5 C T C =5 C.... Figure : ingle Pulse Power Rating Junctionto Case (Note F) Rev: Jan Page 4 of 7

5 AO6/AOI6 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.6 C/W ingle Pulse In descending order =.5,.,.,.5,.,., single pulse P T on T Figure : Normalized Maximum Transient Thermal Impedance (Note F) E A (mj) 9 6 Current rating I (A) T CAE ( C) Figure 4: Avalanche energy T CAE ( C) Figure 5: Current erating (Note B) Rev: Jan Page 5 of 7

6 AO6/AOI6 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 4 T A =5 C Power (W).. Figure 6: ingle Pulse Power Rating JunctiontoAmbient (Note ) Z θja Normalized Transient Thermal Resistance... =T on /T T J,PK =T A P M.Z θja.r θja R θja =55 C/W ingle Pulse In descending order =.5,.,.,.5,.,., single pulse P T on T.... Figure 7: Normalized Maximum Transient Thermal Impedance (Note ) Rev: Jan Page 6 of 7

7 AO6/AOI6 ate Charge Test Circuit & Waveform Qg UT V Qgs Qgd Ig Charge Resistive witching Test Circuit & Waveforms RL Rg UT 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Id Rg Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev: Jan Page 7 of 7