Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 40 V V GS Gate-Source Voltage ±20 V

Transcription

1 General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO220 Pin Configuration G BV RON I 40V 2.5m 160A Features 40V, 160A, R(ON) =2.5mΩ@VG = 10V Improved dv/dt capability Fast switching 100% EA Guaranteed Green evice Available Applications MB / VGA / erver Vcore POL Applications MP 2 nd R BM ystem G Absolute Maximum Ratings Tc=25 unless otherwise noted ymbol Parameter Rating Units V rain-ource Voltage 40 V V G Gate-ource Voltage ±20 V I rain Current Continuous (T C =25 ) (Chip Limitation) 160 A rain Current Continuous (T C =100 ) (Chip Limitation) 100 A I M rain Current Pulsed A EA ingle Pulse Avalanche Energy mj IA ingle Pulse Avalanche Current 2 85 A P Power issipation (T C =25 ) 184 W Power issipation erate above W/ T TG torage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Characteristics ymbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W R θjc Thermal Resistance Junction to Case /W 1

2 Electrical Characteristics (T J =25, unless otherwise noted) tatic tate Characteristics ymbol Parameter Conditions Min. Typ. Max. Unit BV rain-ource Breakdown Voltage V G =0V, I =250uA V I rain-ource Leakage Current V =40V, V G =0V, T J = ua V =32V, V G =0V, T J = ua I G Gate-ource Leakage Current V G =±20V, V =0V ±100 na R (ON) tatic rain-ource On-Resistance 3 V G =10V, I =30A m V G =4.5V, I =15A m V G(th) Gate Threshold Voltage V G =V, I =250uA V gfs Forward Transconductance V =10V, I =15A ynamic Characteristics Q g Total Gate Charge 3, Q gs Gate-ource Charge 3, 4 V =20V, V G=4.5V, I =10A Q gd Gate-rain Charge 3, T d(on) Turn-On elay Time 3, T r Rise Time 3, 4 V =20V, V G=10V, R G = T d(off) Turn-Off elay Time 3, 4 I =10A T f Fall Time 3, C iss Input Capacitance C oss Output Capacitance V =25V, V G =0V, F=1MHz C rss Reverse Transfer Capacitance R g Gate resistance V G =0V, V =0V, F=1MHz Guaranteed Avalanche Energy ymbol Parameter Conditions Min. Typ. Max. Unit EA ingle Pulse Avalanche Energy V =25V, L=0.1mH, IA=30A mj nc ns pf rain-ource iode Characteristics ymbol Parameter Conditions Min. Typ. Max. Unit I Continuous ource Current V G =V =0V, Force Current A I M Pulsed ource Current A V iode Forward Voltage 3 V G =0V, I =1A, T J = V t rr Reverse Recovery Time VG=0V,I=20A, di/dt=100a/µs ns Q rr Reverse Recovery Charge T J = nc Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V =25V,V G =10V,L=0.1mH,I A =85A.,RG=25,tarting TJ= The data tested by pulsed, pulse width 300us, duty cycle 2%. 4. Essentially independent of operating temperature. 2

3 I, Continuous rain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig.1 Continuous rain Current vs. T C T J, Junction Temperature ( ) Fig.2 Normalized RON vs. T J Normalized Gate Threshold Voltage (V) VG, Gate to ource Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) I, Continuous rain Current (A) quare Wave Pulse uration (s) Fig.5 Normalized Transient Impedance V, rain to ource Voltage (V) Fig.6 Maximum afe Operation Area 3

4 Fig.7 witching Time Waveform Fig.8 EA Waveform 4

5 TO220 PACKAGE INFORMATION ymbol imensions In Millimeters imensions In Inches MAX MIN MAX MIN A A A A B C C E G H K L M N T W0.35 W0.014 IA Φ1.5 TYP. deep0.2 TYP. Φ0.059 TYP. deep0.008 TYP. 5