AON7404G 20V N-Channel MOSFET

Transcription

1 AON744G V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =4.V) R (ON) (at V G =4.V) R (ON) (at V G =2.V) V A <.mω < 6.8mΩ Applications C/C Converters in Computing, ervers, and POL Battery protection switch % UI Tested % Rg Tested Top View FN x_ep Bottom View Top View Pin G G Orderable Part Number Package Type Form Minimum Order Quantity AON744G FN x EP Tape & Reel Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter rainource Voltage Gateource Voltage Avalanche energy T A =2 C T A =7 C L=.mH C ymbol Continuous rain T C =2 C I Current G T C = C Pulsed rain Current C 8 Continuous rain Current G Avalanche Current C Power issipation A T C =2 C Junction and torage Temperature Range T J, T TG to V V G I M I M I A E A T A =2 C P M Maximum Power issipation B T C = C P ±2 T A =7 C Units V V A A A mj W W C Thermal Characteristics Parameter ymbol Typ Maximum JunctiontoAmbient A t s R qja Maximum JunctiontoAmbient A teadytate 4 Maximum JunctiontoCase teadytate.7 R qjc Max 2 4. Units C/W C/W C/W Rev..: August 7 Page of 6

2 AON744G Electrical Characteristics (T J =2 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I=2μA, VG=V V I V =V, V G =V Zero Gate Voltage rain Current μa T J = C I G GateBody leakage current V =V, V G =±2V ± na V G(th) Gate Threshold Voltage V =V G, I =2mA V R (ON) V G =4.V, I =A 4.4. mω tatic rainource OnResistance T J =2 C V G =2.V, I =8A mω g F Forward Transconductance V =V, I =A V iode Forward Voltage I =A, V G =V.6 V I Maximum Bodyiode Continuous Current G A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V G =V, V =V, f=mhz 48 pf C rss Reverse Transfer Capacitance 7 pf R g Gate resistance f=mhz Ω WITCHING PARAMETER Q g (4.V) Total Gate Charge 4 nc Q gs Gate ource Charge V G =4.V, V =V, I =A.2 nc Q gd Gate rain Charge 8 nc t (on) TurnOn elaytime 7. ns t r TurnOn Rise Time V G =V, V =V, R L =.W, ns t (off) TurnOff elaytime R GEN =W 72 ns t f TurnOff Fall Time 2 ns t rr Body iode Reverse Recovery Time I F =A, di/dt=a/ms 7 ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=a/ms nc A. The value of R qja is measured with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A =2 C. The Power dissipation P M is based on R qja t s and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T J(MAX) = C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. ingle pulse width limited by junction temperature T J(MAX) = C.. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <ms pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) = C. The OA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on in 2 FR4 board with 2oz. Copper, in a still air environment with T A =2 C. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN,FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev..: August 7 Page 2 of 6

3 R (ON) (mw) I (A) R (ON) (mw) Normalized OnResistance I (A) I (A) AON744G TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 2V 8 V =V 6 2.V 6 4.V 4 4 V G =.V 2 C 2 C V (Volts) Figure : OnRegion Characteristics (Note E) V G (Volts) Figure 2: Transfer Characteristics (Note E) V G =2.V.4 V G =4.V I =A.2 4 V G =4.V V G =2.V I =8A I (A) Figure : OnResistance vs. rain Current and Gate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) I =A.E.E 9.E 2 C 7 2 C 2 C.E2.E.E4 2 C V G (Volts) Figure : OnResistance vs. Gateource Voltage (Note E).E V (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev..: August 7 Page of 6

4 Z qjc Normalized Transient Thermal Resistance I (Amps) Power (W) V G (Volts) Capacitance (pf) AON744G TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 4 V =V I =A 4 4 C iss 2 2 C oss 4 C rss Q g (nc) Figure 7: GateCharge Characteristics V (Volts) Figure 8: Capacitance Characteristics.. ms 4 T J(Max) = C T C =2 C.. R (ON) limited C ms ms ms ms. T J(Max) = C T C =2 C... V (Volts) V G > or equal to 2.V Figure 9: Maximum Forward Biased afe Operating Area (Note F) E.... Figure : ingle Pulse Power Rating Junctionto Case (Note F) =T on /T T J,PK =T C P M.Z qjc.r qjc R qjc =4. C/W In descending order =.,.,.,.,.2,., single pulse. ingle Pulse P M T. E.... Figure : Normalized Maximum Transient Thermal Impedance (Note F) T on Rev..: August 7 Page 4 of 6

5 Z qja Normalized Transient Thermal Resistance Power (W) Power issipation (W) Current rating I (A) AON744G TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC T CAE ( C) Figure 2: Power erating (Note F) T CAE ( C) Figure : Current erating (Note F) T A =2 C E.. Figure 4: ingle Pulse Power Rating JunctiontoAmbient (Note H) =T on /T T J,PK =T A P M.Z qja.r qja R qja = C/W In descending order =.,.,.,.,.2,., single pulse.. ingle Pulse P M T..... Figure : Normalized Maximum Transient Thermal Impedance (Note H) T on Rev..: August 7 Page of 6

6 AON744G Figure Gate A: Charge Gate Charge Test Circuit Test Circuit & Waveform & Waveforms Qg VC UT VC V Qgs Qgd Ig Figure B: Resistive Resistive witching witching Test Test Circuit Circuit & Waveforms Waveforms RL Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Figure C: Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV Rg Id VC Id I AR UT Figure iode : Recovery iode Recovery Test Circuit Test Circuit & Waveforms & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev..: August 7 Page 6 of 6