V DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested

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1 3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions. Produc ummary V I (a V G =V) R (ON) (a V G =V) R (ON) (a V G = 4.5V) 3V 6.5A < 46mΩ < 72mΩ % UI Tesed % R g Tesed Top View OIC8 Boom View G Absolue Maximum Raings unless oherwise noed Parameer ymbol Maximum rainource Volage 3 Gaeource Volage Coninuous rain Curren Pulsed rain Curren C T A =7 C V Avalanche Curren C Avalanche energy L=.1mH C I A, I AR E A, E AR P Power issipaion B T A =7 C 2 V G I I M Juncion and orage Temperaure Range T J, T TG 55 o 15 C ± 3 G Unis V V A A mj W Thermal Characerisics Parameer ymbol Typ Max Maximum JuncionoAmbien A s 31 Maximum JuncionoAmbien A R θja eadyae Maximum JuncionoLead eadyae R θjl Unis C/W C/W C/W Rev 2: Nov 11 Page 1 of 6

2 Elecrical Characerisics (T J =25 C unless oherwise noed) ymbol Parameer Condiions Min Typ Max Unis TATIC PARAMETER BV rainource Breakdown Volage I =25µA, V G =V 3 V V =3V, V G =V 1 I Zero Gae Volage rain Curren µa T J =55 C 5 I G GaeBody leakage curren V =V, V G = ±V ± na V G(h) Gae Threshold Volage V =V G I =25µA V I (ON) On sae drain curren V G =V, V =5V 3 A R (ON) aic rainource OnResisance V G =V, I =6.5A V G =4.5V, I =5A T J =125 C mω g F Forward Transconducance V =5V, I =6.5A 14 V iode Forward Volage I =1A,V G =V.8 1 V I Maximum Bodyiode Coninuous Curren 3.5 A YNAMIC PARAMETER C iss Inpu Capaciance 5 pf C oss Oupu Capaciance V G =V, V =15V, f=1mhz pf C rss Reverse Transfer Capaciance 65 pf R g Gae resisance V G =V, V =V, f=1mhz Ω WITCHING PARAMETER Q g (V) Toal Gae Charge nc Q g (4.5V) Toal Gae Charge nc V G =V, V =15V, I =6.5A Q gs Gae ource Charge 1.6 nc Q gd Gae rain Charge 2.2 nc (on) TurnOn elaytime 7.5 ns r TurnOn Rise Time V G =V, V =15V, R L =2.5Ω, Ω 5.5 ns (off) TurnOff elaytime R GEN =3Ω 19 ns f TurnOff Fall Time 7 ns rr Body iode Reverse Recovery Time I F =6.5A, di/d=a/µs 11 ns Q rr Body iode Reverse Recovery Charge I F =6.5A, di/d=a/µs 5.3 nc A. The value of R θja is measured wih he device mouned on 1in 2 FR4 board wih 2oz. Copper, in a sill air environmen wih. The value in any given applicaion depends on he user's specific board design. B. The power dissipaion P is based on T J(MAX) =15 C, using s juncionoambien hermal resisance. C. Repeiive raing, pulse widh limied by juncion emperaure T J(MAX) =15 C. Raings are based on low frequency and duy cycles o keep iniialt J =25 C.. The R θja is he sum of he hermal impedence from juncion o lead R θjl and lead o ambien. E. The saic characerisics in Figures 1 o 6 are obained using <3µs pulses, duy cycle.5% max. F. These curves are based on he juncionoambien hermal impedence which is measured wih he device mouned on 1in 2 FR4 board wih 2oz. Copper, assuming a maximum juncion emperaure of T J(MAX) =15 C. The OA curve provides a single pulse raing. mω THI PROUCT HA BEEN EIGNE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIING OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIGHT TO IMPROVE PROUCT EIGN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev 2: Nov 11 Page 2 of 6

3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC V 8V 6V 5V 3 25 V =5V I (A) 15 5 V G =4.5V 4V V G =3.5V I (A) C 25 C V (Vols) Fig 1: OnRegion Characerisics (Noe E) V G (Vols) Figure 2: Transfer Characerisics (Noe E) R (ON) (mω) V G =4.5V V G =V Normalized OnResisance V G =V I =6.5A 17 5 V G =4.5V I =5A I (A) Figure 3: OnResisance vs. rain Curren and Gae Volage (Noe E) Temperaure ( C) Figure 4: OnResisance vs. Juncion 18 Temperaure (Noe E) 1 1.E2 I =6.5A 1.E1 1.E R (ON) (mω) C I (A) 1.E1 1.E2 1.E3 125 C 25 C 1.E4 25 C V G (Vols) Figure 5: OnResisance vs. Gaeource Volage (Noe E) 1.E V (Vols) Figure 6: Bodyiode Characerisics (Noe E) Rev 2: Nov 11 Page 3 of 6

4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =15V I =6.5A C iss V G (Vols) Capaciance (pf) 5 3 C oss Q g (nc) Figure 7: GaeCharge Characerisics C rss V (Vols) Figure 8: Capaciance Characerisics I AR (A) Peak Avalanche Curren.. 1. T A = C T A =15 T A =125 C I (Amps) R (ON) limied µs µs 1ms ms T J(Max) =15 C s C Time in avalanche, A (µs) V (Vols) Figure 9: ingle Pulse Avalanche capabiliy (Noe C) Figure : Maximum Forward Biased afe Operaing Area (Noe F) Power (W) Pulse Widh (s) Figure 11: ingle Pulse Power Raing JuncionoAmbien (Noe F) Rev 2: Nov 11 Page 4 of 6

5 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC Z θja Normalized Transien Thermal Resisance =T on /T In descending order T J,PK =T A P M.Z θja.r θja =.5,.3,.1,.5,.2,.1, single pulse 1 R θja =75 C/W ingle Pulse Pulse Widh (s) Figure 12: Normalized Maximum Transien Thermal Impedance (Noe F) P T on T Rev 2: Nov 11 Page 5 of 6

6 Gae Charge Tes Circui & Waveform Qg VC UT VC V Qgs Qgd Ig Charge RL Resisive wiching Tes Circui & Waveforms on off d(on) r d(off) f Rg UT VC 9% % Id L Unclamped Inducive wiching (UI) Tes Circui & Waveforms 2 E = 1/2 LI AR AR Rg VC Id BV UT I AR iode Recovery Tes Circui & Waveforms UT Q = Id rr Ig Isd L VC Isd I F di/d I RM rr Rev 2: Nov 11 Page 6 of 6