NDT454P P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 June 996 NT454P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures Power OT P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MO echnology. This very high densiy process is especially ailored o minimize on-sae resisance and provide superior swiching performance. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed..9a, -V. R (ON) V G = -V R (ON) V G = -6V R (ON) V G =.5V. High densiy cell design for exremely low R (ON). High power and curren handling capabiliy in a widely used surface moun package. G G Absolue Maximum Raings T A = 5 C unless oherwise noed ymbol Parameer NT454P Unis V rain-ource Volage - V V G Gae-ource Volage ± V I rain Curren - Coninuous (Noe a) ±5.9 A - Pulsed ±5 P Maximum Power issipaion (Noe a) W (Noe b). (Noe c). T J,T TG Operaing and orage Temperaure Range -65 o 5 C THERMAL CHARACTERITIC R θja Thermal Resisance, Juncion-o-Ambien (Noe a) 4 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) C/W * Order opion JZ for cropped cener drain lead. 997 Fairchild emiconducor Corporaion NT454P Rev.

2 Elecrical Characerisics (T A = 5 C unless oherwise noed) ymbol Parameer Condiions Min Typ Max Unis OFF CHARACTERITIC BV rain-ource Breakdown Volage V G = V, I = -5 µa - V I Zero Gae Volage rain Curren V = V, V G = V - µa V = -5 V, V G = V T J = 7 C µa I GF Gae - Body Leakage, Forward V G = V, V = V na I GR Gae - Body Leakage, Reverse V G = V, V = V - na ON CHARACTERITIC (Noe ) V G(h) Gae Threshold Volage V = V G, I = -5 µa V R (ON) aic rain-ource On-Resisance V G = - V, I =.9 A.8.5 Ω V G = -6 V, I =. A.46.7 V G =.5 V, I =.6 A.64.9 I (on) On-ae rain Curren V G = - V, V = V -5 A V G =.5, V = V g F Forward Transconducance V = 5 V, I = 5.9 A YNAMIC CHARACTERITIC C iss Inpu Capaciance V = 5 V, V G = V, 95 pf C oss Oupu Capaciance f =. MHz 6 pf C rss Reverse Transfer Capaciance pf WITCHING CHARACTERITIC (Noe ) (on) Turn - On elay Time V = -5 V, I = - A, ns r Turn - On Rise Time V GEN = - V, R GEN = 6 Ω 8 6 ns (off) Turn - Off elay Time 8 ns f Turn - Off Fall Time 45 ns Q g Toal Gae Charge V = -5 V, 9 4 nc Q gs Gae-ource Charge I =.9 A, V G = - V Q gd Gae-rain Charge NT454P Rev.

3 Elecrical Characerisics (T A = 5 C unless oherwise noed) ymbol Parameer Condiions Min Typ Max Unis RAIN-OURCE IOE CHARACTERITIC AN MAXIMUM RATING I Maximum Coninuous rain-ource iode Forward Curren -.9 A V rain-ource iode Forward Volage V G = V, I =.9 A (Noe ) V rr Reverse Recovery Time V G = V, I F =.9 A, di F /d = A/µs ns Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = TJ TA RθJA() = TJ TA = RθJC+RθCA() I () R (ON ) TJ Typical R θja using he board layous shown below on 4.5"x5" FR PCB in a sill air environmen: a. 4 o C/W when mouned on a in pad of oz copper. b. 95 o C/W when mouned on a.66 in pad of oz copper. c. o C/W when mouned on a. in pad of oz copper. a b c cale : on leer size paper. Pulse Tes: Pulse Widh < µs, uy Cycle <.%. NT454P Rev.

4 Typical Elecrical Characerisics I, RAIN-OURCE CURRENT (A) V G =-V R (on), NORMALIZE RAIN-OURCE ON-REITANCE.5.5 V G = -.5V.V.5V.V -6.V -V V, RAIN-OURCE VOLTAGE (V) I, RAIN CURRENT (A) -6 Figure. On-Region Characerisics. Figure. On-Resisance Variaion wih rain Curren and Gae Volage..6 R (ON), NORMALIZE RAIN-OURCE ON-REITANCE.4..8 I =.9A V G = -V R (on), NORMALIZE RAIN-OURCE ON-REITANCE.5 V = -V G T = 5 C J 5 C 5 C T, JUNCTION TEMPERATURE ( C) J.5 - I, RAIN CURRENT (A) -5 Figure. On-Resisance Variaion wih Temperaure. Figure 4. On-Resisance Variaion wih rain Curren and Temperaure. -I, RAIN CURRENT (A) V = -V T = 5 C J 5 5 V, NORMALIZE h GATE-OURCE THREHOL VOLTAGE V = V G I = -5µA V G, GATE TO OURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure 5. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NT454P Rev.

5 Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-OURCE BREAKOWN VOLTAGE..8 I = -5µA T J, JUNCTION TEMPERATURE ( C) -I, REVERE RAIN CURRENT (A) 5.. V G = V T = 5 C J 5 C 5 C V, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure. Figure 8. Body iode Forward Volage Variaion wih ource Curren and Temperaure. I =.9A V = -V -5V V CAPACITANCE (pf) 5 f = MHz V G = V C iss C oss C rss -V, GATE-OURCE VOLTAGE (V) G V, RAIN TO OURCE VOLTAGE (V) 4 Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. V IN -V R L d(on) on r 9% d(off) off 9% f V OUT V G R GEN G UT V OUT % 9% % V IN 5% 5% % PULE WITH INVERTE Figure. wiching Tes Circui. Figure. wiching Waveforms. NT454P Rev.

6 Typical Elecrical and ThermalCharacerisics (coninued).5 g F, TRANCONUCTANCE (IEMEN) V = -5V - T = 5 C J I, RAIN CURRENT (A) 5 C -5 5 C TEAY-TATE POWER IIPATION (W).5.5 c b 4.5"x5" FR Board o T A = 5 C ill Air oz COPPER MOUNTING PA AREA (in ) a Figure. Transconducance Variaion wih rain Curren and Temperaure. Figure 4. OT- Maximum eady-ae Power issipaion versus Copper Mouning Pad Area. 7 I, TEAY-TATE RAIN CURRENT (A) 6 a 5 b 4 c 4.5"x5" FR Board o T A = 5 C ill Air V G = -V oz COPPER MOUNTING PA AREA (in ) -I, RAIN CURRENT (A)... R(ON) LIMIT V G = -V INGLE PULE R = ee Noe c θja T A = 5 C s C ms s ms - V, RAIN-OURCE VOLTAGE (V) us ms Figure 5. Maximum eady-ae rain Curren versus Copper Mouning Pad Area. Figure 6. Maximum afe Operaing Area..5 =.5 r(), NORMALIZE EFFECTIVE TRANIENT THERMAL REITANCE ingle Pulse P(pk) R () = r() * R R = ee Noe c T J - T A = P * R () uy Cycle, = /....., TIME (sec) Figure 5. Transien Thermal Response Curve. Noe: Thermal characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. NT454P Rev.

7 TRAEMARK The following are regisered and unregisered rademarks Fairchild emiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ACEx Boomless CoolFET CROVOLT ensetrench OME EcoPARK E CMO TM Enigna TM FACT FACT Quie eries TAR*POWER is used under license ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT TATU EFINITION efiniion of Terms FAT FATr FRFET GlobalOpoisolaor GTO HieC IOPLANAR LileFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerTrench QFET Q QT Opoelecronics Quie eries ILENT WITCHER MART TART TAR*POWER ealh uperot - uperot -6 uperot -8 yncfet TinyLogic TruTranslaion UHC UlraFET. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc aus efiniion VCX Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. pecificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild emiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild emiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only. Rev. H4