NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor
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- Eugenia Henderson
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1 May 996 NS9435A Single P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance, provide superior swiching performance, and wihsand high energy pulses in he avalanche and commuaion modes. These devices are paricularly suied for low volage applicaions such as noebook compuer power managemen and oher baery powered circuis where fas swiching, low in-line power loss, and resisance o ransiens are needed. -5.3A, -3V. R S(ON) V GS = -V R S(ON) V GS = -6V R S(ON) V GS = -4.5V. High densiy cell design for exremely low R S(ON). High power and curren handling capabiliy in a widely used surface moun package SO-8 pin S S S G 7 8 Absolue Maximum Raings T A = 5 C unless oherwise noed Symbol Parameer NS9435A Unis V SS rain-source Volage -3 V V GSS Gae-Source Volage ± V I rain Curren - Coninuous (Noe a) ± 5.3 A - Pulsed ± P Maximum Power issipaion (Noe a).5 W (Noe b). (Noe c) T J,T STG Operaing and Sorage Temperaure Range -55 o 5 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a) 5 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) 5 C/W 999 Fairchild Semiconducor Corporaion NS9435A Rev B
2 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = -5 µa -3 V I SS Zero Gae Volage rain Curren V S = -4 V, V GS = V - µa V S = -5 V, V GS = V T J = 7 C -5 µa I GSSF Gae - Body Leakage, Forward V GS = V, V S = V na I GSSR Gae - Body Leakage, Reverse V GS = - V, V S = V - na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = -5 µa V T J = 5 C R S(ON) Saic rain-source On-Resisance V GS = - V, I = -5.3 A.38.5 Ω T J = 5 C.54. V GS = -6 V, I = -4.7 A.46.7 V GS = -4.5 V, I = -4. A.64.9 I (on) On-Sae rain Curren V GS = - V, V S = -5 V - A V GS = -4.5, V S = -5V -5 g FS Forward Transconducance V S = 5 V, I = 5.3 A S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = 5 V, V GS = V, 95 pf C oss Oupu Capaciance f =. MHz 6 pf C rss Reverse Transfer Capaciance pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = -5 V, I = - A, 3 ns r Turn - On Rise Time V GEN = - V, R GEN = 6 Ω 8 6 ns (off) Turn - Off elay Time 8 ns f Turn - Off Fall Time 45 ns Q g Toal Gae Charge V S = -5 V, 9 4 nc Q gs Gae-Source Charge I = -5.3 A, V GS = - V 3 nc Q gd Gae-rain Charge 9 nc NS9435A Rev B
3 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren -.9 A V S rain-source iode Forward Volage V GS = V, I S = -5.3 A (Noe ) V rr Reverse Recovery Time V GS = V, I F = -5.3 A, di F /d = A/µs ns Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = TJ TA RθJ A() = TJ TA RθJ C+RθCA() = I () R S(ON)@TJ Typical R θja using he board layous shown below on 4.5"x5" FR-4 PCB in a sill air environmen: a. 5 o C/W when mouned on a in pad of oz cpper. b. 5 o C/W when mouned on a.4 in pad of oz cpper. c. 5 o C/W when mouned on a.6 in pad of oz cpper. a b c Scale : on leer size paper. Pulse Tes: Pulse Widh < 3µs, uy Cycle <.%. NS9435A Rev B
4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) V GS =-V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS = -3.5V -4.V -4.5V -5.V -6.V -V V S, RAIN-SOURCE VOLTAGE (V) I, RAIN CURRENT (A) -6 - Figure. On-Region Characerisics Figure. On-Resisance Variaion wih rain Curren and Gae Volage.6 R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE.4..8 I = -5.3A V GS = -V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE.5 V = -V GS T = 5 C J 5 C -55 C T, JUNCTION TEMPERATURE ( C) J I, RAIN CURRENT (A) -5 - Figure 3. On-Resisance Variaion wih Temperaure Figure 4. On-Resisance Variaion wih rain Curren and Temperaure -I, RAIN CURRENT (A) V = -V S T = -55 C J 5 5 V, NORMALIZE h GATE-SOURCE THRESHOL VOLTAGE V = V S GS I = -5µA V GS, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( C) Figure 5. Transfer Characerisics Figure 6. Gae Threshold Variaion wih Temperaure NS9435A Rev B
5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = -5µA T J, JUNCTION TEMPERATURE ( C) -I, REVERSE RAIN CURRENT (A) 5.. V GS = V T = 5 C J 5 C -55 C V S, BOY IOE FORWAR VOLTAGE (V) Figure 7. Breakdown Volage Variaion wih Temperaure Figure 8. Body iode Forward Volage Variaion wih Source Curren and Temperaure CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss -V, GATE-SOURCE VOLTAGE (V) GS I = -5.3A V = -V S -5V -V V S, RAIN TO SOURCE VOLTAGE (V) 3 4 Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics Figure. Gae Charge Characerisics V IN -V R L d(on) on r 9% d(off) off 9% f V OUT V GS R GEN G UT V OUT % % 9% S V IN % 5% 5% PULSE WITH INVERTE Figure. Swiching Tes Circui Figure. Swiching Waveforms NS9435A Rev B
6 Typical Elecrical and Thermal Characerisics (coninued).5 g FS, TRANSCONUCTANCE (SIEMENS) V = -5V S -5 T = -55 C J - I, RAIN CURRENT (A) 5 C -5 5 C - STEAY-STATE POWER ISSIPATION (W) a.5 b c 4.5"x5" FR-4 Board o T A = 5 C Sill Air oz COPPER MOUNTING PA AREA (in ) Figure 3. Transconducance Variaion wih rain Curren and Temperaure Figure 4. SO-8 Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. 6 3 us I, STEAY-STATE RAIN CURRENT (A) a 5 b 4 c 3 4.5"x5" FR-4 Board o T A = 5 C Sill Air V GS = -V oz COPPER MOUNTING PA AREA (in ) -I, RAIN CURRENT (A) RS(ON) LIMIT V GS = -V SINGLE PULSE R = See Noe c θja T A = 5 C s C ms V S, RAIN-SOURCE VOLTAGE (V) s ms ms Figure 5. Maximum Seady-Sae rain Curren versus Copper Mouning Pad Area. Figure 6. Maximum Safe Operaing Area r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse , TIME (sec) P(pk) R θja () = r() * R θja R = See Noe c θja T J - T = P * R () A θja uy Cycle, = / Figure 7. Transien Thermal Response Curve. Noe: Thermal characerizaion performed using he condiions described in noe c. Transien hermal response will change depending on he circui board design. NS9435A Rev B
7 ELECTRO MAGN ETI C, MAG NETIC O R R AIO ACTIVE FI EL S TNR ATE PT NUMBER PEEL STRENGTH MIN gms MAX gms SO-8 Tape and Reel aa and Package imensions SOIC(8lds) Packaging Configuraion: Figure. ELECTROSTATIC SENSITIVE EVICES O NO T SHI P OR STO RE N EAR STRO NG ELECTROSTATIC ES Label Anisaic Cover Tape Saic issipaive Embossed Carrier Tape Packaging escripion: SOIC-8 pars are shipped in ape. The carrier ape is made from a dissipaive (carbon filled) polycarbonae resin. The cover ape is a mulilayer film (Hea Acivaed Adhesive in naure) primarily composed of polyeser film, adhesive layer, sealan, and ani-saic sprayed agen. These reeled pars in sandard opion are shipped wih,5 unis per 3" or 33cm diameer reel. The reels are dark blue in color and is made of polysyrene plasic (anisaic coaed). Oher opion comes in 5 unis per 7" or 77cm diameer reel. This and some oher opions are furher described in he Packaging Informaion able. These full reels are individually barcode labeled and placed inside a sandard inermediae box (illusraed in figure.) made of recyclable corrugaed brown paper. One box conains wo reels maximum. And hese boxes are placed inside a barcode labeled shipping box which comes in differen sizes depending on he number of pars shipped. F63TNR Label Cusomized Label Noe/Commens SOIC (8lds) Packaging Informaion Packaging Opion Sandard (no flow code) L86Z F 84Z Packaging ype TNR Rail/Tube TNR TNR Qy per Reel/Tube/Bag,5 95 4, 5 Reel Size 3" ia - 3" ia 7" ia Box imension (mm) 343x64x343 53x3x83 343x64x343 84x87x47 Max qy per Box 5, 3, 8,, Weigh per uni (gm) Weigh per Reel (kg) F85 NS 9959 F85 NS 9959 F85 NS 9959 SOIC-8 Uni Orienaion F85 NS 9959 F85 NS 9959 Pin 343mm x 34mm x 64mm Sandard Inermediae box F63TNR Label sample LOT: CBVK74B9 QTY: 5 F63TNLabel ES Label F63TN Label FSI: FS9953A SPEC: ES Label /C: 984 QTY: SPEC REV: /C: QTY: CPN: N/F: F (F63TNR)3 SOIC(8lds) Tape Leader and Trailer Configuraion: Figure. Carrier Tape Cover Tape Trailer Tape 64mm minimum or 8 empy pockes Componens Leader Tape 68mm minimum or empy pockes July 999, Rev. B
8 SO-8 Tape and Reel aa and Package imensions, coninued SOIC(8lds) Embossed Carrier Tape Configuraion: Figure 3. T P E F K Wc B E W Tc A P User irecion of Feed imensions are in millimeer Pkg ype A B W E E F P P K T Wc Tc SOIC(8lds) (mm) 6.5 +/ /-.. +/ / / /-..5 min 5.5 +/ / /-.. +/ / / /-. Noes: A, B, and K dimensions are deermined wih respec o he EIA/Jedec RS-48 roaional and laeral movemen requiremens (see skeches A, B, and C). deg maximum.5mm maximum B Typical componen caviy cener line.5mm maximum deg maximum componen roaion Skech A (Side or Fron Secional View) Componen Roaion SOIC(8lds) Reel Configuraion: Figure 4. A Skech B (Top View) Componen Roaion Typical componen cener line Skech C (Top View) Componen laeral movemen W Measured a Hub im A Max im A max im N 7" iameer Opion See deail AA B Min im C See deail AA W3 im min 3" iameer Opion W max Measured a Hub ETAIL AA Tape Size Reel Opion imensions are in inches and millimeers im A im B im C im im N im W im W im W3 (LSL-USL) mm 7" ia / / /-..4 +/ mm 3" ia / / /-..4 +/ Fairchild Semiconducor Corporaion July 999, Rev. B
9 SOIC-8 (FS PKG Code S) : Scale : on leer size paper imensions shown below are in: inches [millimeers]
10 TRAEMARKS The following are regisered and unregisered rademarks Fairchild Semiconducor owns or is auhorized o use and is no inended o be an exhausive lis of all such rademarks. ISCLAIMER ACEx CoolFET CROSSVOLT E CMOS TM FACT FACT Quie Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quie Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC VCX FAIRCHIL SEMICONUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PROUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR ESIGN. FAIRCHIL OES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROUCT OR CIRCUIT ESCRIBE HEREIN; NEITHER OES IT CONVEY ANY LICENSE UNER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHIL S PROUCTS ARE NOT AUTHORIZE FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHIL SEMICONUCTOR CORPORATION. As used herein:. Life suppor devices or sysems are devices or sysems which, (a) are inended for surgical implan ino he body, or (b) suppor or susain life, or (c) whose failure o perform when properly used in accordance wih insrucions for use provided in he labeling, can be reasonably expeced o resul in significan injury o he user. PROUCT STATUS EFINITIONS efiniion of Terms. A criical componen is any componen of a life suppor device or sysem whose failure o perform can be reasonably expeced o cause he failure of he life suppor device or sysem, or o affec is safey or effeciveness. aashee Idenificaion Produc Saus efiniion Advance Informaion Preliminary No Idenificaion Needed Formaive or In esign Firs Producion Full Producion This daashee conains he design specificaions for produc developmen. Specificaions may change in any manner wihou noice. This daashee conains preliminary daa, and supplemenary daa will be published a a laer dae. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. This daashee conains final specificaions. Fairchild Semiconducor reserves he righ o make changes a any ime wihou noice in order o improve design. Obsolee No In Producion This daashee conains specificaions on a produc ha has been disconinued by Fairchild semiconducor. The daashee is prined for reference informaion only.
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
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